Micromechanical properties of GaP〈Dy〉 epilayers.
- Published in:
- Inorganic Materials, 2012, v. 48, n. 8, p. 768, doi. 10.1134/S0020168512070047
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- Publication type:
- Article
Works matching DE "GALLIUM phosphide epitaxy"
Results: 7
1
2
High-temperature gallium phosphide dynistors.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077
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- Publication type:
- Article
3
Diffusion redistribution of zinc during the doping of structurally inhomogeneous epitaxial layers of gallium phosphide.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 7, p. 601, doi. 10.1134/S1063785009070050
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- Publication type:
- Article
4
Nanowire-Based Electrode for Acute <i>In Vivo</i> Neural Recordings in the Brain.
- Published in:
- PLoS ONE, 2013, v. 8, n. 2, p. 1, doi. 10.1371/journal.pone.0056673
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- Publication type:
- Article
5
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327
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- Publication type:
- Article
6
Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X
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- Publication type:
- Article
7
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2088, doi. 10.1134/S1063782618160054
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- Publication type:
- Article