Works matching DE "GALLIUM phosphide"

Results: 122

Photoelectrochemistry of metalloporphyrin-modified GaP semiconductors.

Published in:

Photosynthesis Research, 2022, v. 151, n. 2, p. 1, doi. 10.1007/s11120-021-00834-2

By:

Nishiori, Daiki;
Wadsworth, Brian L.;
Reyes Cruz, Edgar A.;
Nguyen, Nghi P.;
Hensleigh, Lillian K.;
Karcher, Timothy;
Moore, Gary F.

Publication type:

Article

Quantitative HAADF-studies of GaP/Si-interfaces.

Published in:

2012

By:

Haas, B.;
Beyer, A.;
Ohlmann, J.;
Stolz, W.;
Volz, K.

Publication type:

Abstract

Electronic stopping and proton dynamics in InP, GaP, and In<sub>0.5</sub>Ga<sub>0.5</sub>P from first principles.

Published in:

European Physical Journal B: Condensed Matter, 2018, v. 91, n. 10, p. 1, doi. 10.1140/epjb/e2018-90204-8

By:

Lee, Cheng-Wei;
Schleife, André

Publication type:

Article

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells.

Published in:

Advanced Energy Materials, 2020, v. 10, n. 6, p. N.PAG, doi. 10.1002/aenm.201903085

By:

Li, Zijia;
Kim, Tae Hak;
Han, Sung Yong;
Yun, Yeo‐Jun;
Jeong, Seonghwa;
Jo, Bonghyun;
Ok, Song Ah;
Yim, Woongbin;
Lee, Seung Hu;
Kim, Kangho;
Moon, Sunghyun;
Park, Ji‐Yong;
Ahn, Tae Kyu;
Shin, Hyunjung;
Lee, Jaejin;
Park, Hui Joon

Publication type:

Article

The numerical investigation of magnetic properties of single domain MnP:GaP nanoparticles.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 6, p. -1, doi. 10.1142/S0217984916500652

By:

Gerami, Adeleh Mokhles;
Vaez-Zadeh, Mehdi

Publication type:

Article

Investigation on terahertz parametric oscillators using quasi-phase-matching GaP crystal.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 1, p. -1, doi. 10.1142/S0217984914502583

By:

Li, Z. Y.;
Bing, P. B.;
Yuan, S.;
Xu, D. G.;
Yao, J. Q.

Publication type:

Article

Gallium phosphide nanoribbon-based carbon monoxide sensors: insights from first principles study.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 30, p. 1, doi. 10.1142/S0217979224504113

By:

Singh, Neelesh Pratap;
Ghosh, Jayanta;
Jaiswal, Neeraj K.

Publication type:

Article

Structural stability and electronic properties of different cross-sectional unstrained and rectangular cross-sectional strained GaP nanowires.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 4, p. N.PAG, doi. 10.1142/S0217979219500061

By:

Mohammad, Rezek;
Katırcıoğlu, Şenay

Publication type:

Article

Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.

Published in:

Technical Physics Letters, 2021, v. 47, n. 10, p. 730, doi. 10.1134/S1063785021070270

By:

Uvarov, A. V.;
Baranov, A. I.;
Vyacheslavova, E. A.;
Kalyuzhnyi, N. A.;
Kudryashov, D. A.;
Maksimova, A. A.;
Morozov, I. A.;
Mintairov, S. A.;
Salii, R. A.;
Gudovskikh, A. S.

Publication type:

Article

Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 2, p. 168, doi. 10.3390/cryst13020168

By:

Manavaimaran, Balaji;
Strömberg, Axel;
Tassev, Vladimir L.;
Vangala, Shivashankar R.;
Bailly, Myriam;
Grisard, Arnaud;
Gérard, Bruno;
Lourdudoss, Sebastian;
Sun, Yan-Ting

Publication type:

Article

Design of Semiconductor Contact Grating Terahertz Source with Enhanced Diffraction Efficiency.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 8, p. 1173, doi. 10.3390/cryst12081173

By:

Tibai, Zoltán;
Mbithi, Nelson M.;
Almási, Gábor;
Fülöp, József A.;
Hebling, János

Publication type:

Article

Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 4, p. 398, doi. 10.3390/coatings11040398

By:

Caño, Pablo;
Ruiz, Carmen M.;
Navarro, Amalia;
Galiana, Beatriz;
García, Iván;
Rey-Stolle, Ignacio

Publication type:

Article

Microwave-to-optical conversion with a gallium phosphide photonic crystal cavity.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28670-5

By:

Hönl, Simon;
Popoff, Youri;
Caimi, Daniele;
Beccari, Alberto;
Kippenberg, Tobias J.;
Seidler, Paul

Publication type:

Article

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26262-3

By:

Sortino, Luca;
Zotev, Panaiot G.;
Phillips, Catherine L.;
Brash, Alistair J.;
Cambiasso, Javier;
Marensi, Elena;
Fox, A. Mark;
Maier, Stefan A.;
Sapienza, Riccardo;
Tartakovskii, Alexander I.

Publication type:

Article

Generation of even and odd high harmonics in resonant metasurfaces using single and multiple ultra-intense laser pulses.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-24450-9

By:

Shcherbakov, Maxim R.;
Zhang, Haizhong;
Tripepi, Michael;
Sartorello, Giovanni;
Talisa, Noah;
AlShafey, Abdallah;
Fan, Zhiyuan;
Twardowski, Justin;
Krivitsky, Leonid A.;
Kuznetsov, Arseniy I.;
Chowdhury, Enam;
Shvets, Gennady

Publication type:

Article

Self-assembled Nanostructures inside Indirect Bandgap Semiconductor by Using IR Femtosecond Double-pulses.

Published in:

Journal of Laser Micro / Nanoengineering, 2016, v. 11, n. 1, p. 76, doi. 10.2961/jlmn.2016.01.0014

By:

T. Sei;
Y. Shimotsuma;
M. Sakakura;
K. Miura

Publication type:

Article

THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE.

Published in:

Surface Review & Letters, 2018, v. 25, n. 3, p. 1, doi. 10.1142/S0218625X18500646

By:

DEMİR, K. ÇINAR;
KURUDIREK, S. V.;
OZ, S.;
BIBER, M.;
AYDOĞAN, Ş.;
ŞAHIN, Y.;
COŞKUN, C.

Publication type:

Article

Ab-initio study of structural, electronic, and transport properties of zigzag GaP nanotubes.

Published in:

Journal of Molecular Modeling, 2014, v. 20, n. 3, p. 1, doi. 10.1007/s00894-014-2171-2

By:

Srivastava, Anurag;
Jain, Sumit;
Khare, Purnima

Publication type:

Article

Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN.

Published in:

Electronics & Electrical Engineering, 2019, v. 25, n. 4, p. 36, doi. 10.5755/j01.eie.25.4.23968

By:

Suproniuk, Marek;
Piwowarski, Karol;
Perka, Bogdan;
Kaminski, Pawel;
Kozlowski, Roman;
Teodorczyk, Marian

Publication type:

Article

The Observations of the IR Sensitivity Enhancement, Negative Differential Resistance and Hysteresis in a Microelectronic Gas Discharge Device with GaP.

Published in:

Electronics & Electrical Engineering, 2014, v. 20, n. 1, p. 55, doi. 10.5755/j01.eee.20.1.6173

By:

Kurt, H. Y.;
Kurt, E.

Publication type:

Article

Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3435, doi. 10.1007/s11664-019-07848-6

By:

Siao, Hui-Ying;
Bunk, Ryan J.;
Woodall, Jerry M.

Publication type:

Article

The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3502, doi. 10.1007/s11664-018-6192-y

By:

Ejderha, K.;
Orak, I.;
Duman, S.;
Turut, A.

Publication type:

Article

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 10, p. 5297, doi. 10.1007/s11664-016-4737-5

By:

Song, Sungjoo;
Kim, Dae-Hyun;
Kang, Daesung;
Seong, Tae-Yeon

Publication type:

Article

Estimation of Minimal Breakdown Point in a GaP Plasma Structure and Discharge Features in Air and Argon Media.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3872, doi. 10.1007/s11664-016-4529-y

By:

Kurt, H.;
Tanrıverdi, Evrim

Publication type:

Article

Theoretical and Experimental Exploration of Breakdown Phenomena in an Argon-Filled GaP Device.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3970, doi. 10.1007/s11664-016-4539-9

By:

Kurt, H.;
Tanrıverdi, Evrim;
Kurt, Erol

Publication type:

Article

Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 894, doi. 10.1007/s11664-013-2966-4

By:

Zhao, Xin;
Montgomery, Kyle;
Woodall, Jerry

Publication type:

Article

Orientation-patterned gallium phosphide for integrated nonlinear photonics.

Published in:

Photoniques, 2023, n. 122, p. 64, doi. 10.1051/photon/202312264

By:

Pantzas, Konstantinos;
Combrie, Sylvain;
Leger, Yoan;
Beaudoin, Grégoire;
Le Gratiet, Luc;
Harouri, Abdel mounaim;
Gerard, Bruno;
Patriarche, Gilles;
Sagnes, Isabelle;
Grisard, Arnaud

Publication type:

Article

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900776

By:

Guo, Xiaoru;
Mughal, Asad;
Dunphy, Darren;
Stone, Gregory;
Miller, David;
Huh, Sungwook

Publication type:

Article

Machine Learning‐Based Optimization of Chiral Photonic Nanostructures: Evolution‐ and Neural Network‐Based Designs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 2, p. 1, doi. 10.1002/pssr.202100571

By:

Mey, Oliver;
Rahimi-Iman, Arash

Publication type:

Article

Structural Parameters and Spin Filtering Properties of Ga( M)P compound.

Published in:

Journal of Superconductivity & Novel Magnetism, 2016, v. 29, n. 4, p. 959, doi. 10.1007/s10948-016-3396-3

By:

Ketabi, S.

Publication type:

Article

Half-Metallic Ferromagnetic Property Related to Spintronic Applications in 3 d (V, Cr, and Mn)-Doped GaP DMSs.

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 10, p. 3163, doi. 10.1007/s10948-015-3148-9

By:

Doumi, B.;
Mokaddem, A.;
Sayede, A.;
Boutaleb, M.;
Tadjer, A.;
Dahmane, F.

Publication type:

Article

Integrated Fluorescent Nanoprobe Design for High‐Speed In Vivo Two‐Photon Microscopic Imaging of Deep‐Brain Vasculature in Mice.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 20, p. 1, doi. 10.1002/adfm.202010698

By:

Takezaki, Minami;
Kawakami, Ryosuke;
Onishi, Shozo;
Suzuki, Yasutaka;
Kawamata, Jun;
Imamura, Takeshi;
Hadano, Shingo;
Watanabe, Shigeru;
Niko, Yosuke

Publication type:

Article

Growth and properties of GaInPAsBi solid solutions on GaP substrates.

Published in:

Inorganic Materials, 2014, v. 50, n. 2, p. 113, doi. 10.1134/S0020168514020010

By:

Alfimova, D.;
Lunin, L.;
Lunina, M.

Publication type:

Article

Micromechanical properties of GaP〈Dy〉 epilayers.

Published in:

Inorganic Materials, 2012, v. 48, n. 8, p. 768, doi. 10.1134/S0020168512070047

By:

Brinkevich, D.;
Vabishchevich, N.;
Prosolovich, V.

Publication type:

Article

Direct Observation of Liquid–Solid Two‐Phase Seed Particle‐Assisted Kinking in GaP Nanowire Growth.

Published in:

Small Structures, 2023, v. 4, n. 9, p. 1, doi. 10.1002/sstr.202300011

By:

Hu, Tianyi;
Seifner, Michael S.;
Snellman, Markus;
Jacobsson, Daniel;
Sedrpooshan, Mehran;
Ternero, Pau;
Messing, Maria E.;
Dick, Kimberly A.

Publication type:

Article

Możliwości zastąpienia wybranych łączników przez półprzewodnikowe łączniki fotokonduktancyjne.

Published in:

Przegląd Elektrotechniczny, 2021, v. 97, n. 4, p. 88, doi. 10.15199/48.2021.04.15

By:

PIWOWARSKI, Karol;
PERKA, Bogdan

Publication type:

Article

Concept of a measuring system for diagnostics of photoconductive semiconductor switches parameters.

Published in:

Przegląd Elektrotechniczny, 2019, v. 95, n. 11, p. 117, doi. 10.15199/48.2019.11.31

By:

PIWOWARSKI, Karol;
SUPRONIUK, Marek;
KAMIŃSKI, Paweł;
PERKA, Bogdan

Publication type:

Article

Design of an Optimized Terahertz Time-Domain Spectroscopy System Pumped by a 30 W Yb:KGW Source at a 100 kHz Repetition Rate with 245 fs Pulse Duration.

Published in:

Applied Sciences (2076-3417), 2024, v. 14, n. 15, p. 6688, doi. 10.3390/app14156688

By:

Hirsch, Lennart;
Adamou, Dionysis;
Faccio, Daniele;
Peccianti, Marco;
Clerici, Matteo

Publication type:

Article

Electronic, Structural and Vibrational Properties of GaP Diamondoids and Nanocrystals: A Density Functional Theory Study.

Published in:

Nanomaterials & Nanotechnology, 2015, v. 5, p. 1, doi. 10.5772/60577

By:

Abdulsattar, Mudar Ahmed;
Kadhim, Bahjat B.;
Jawad, Huda M.

Publication type:

Article

Study of structural, electronic, magnetic, and elastic properties of GaP and GaXP (where X = Cr, Mn, and Fe) using DFT studies.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 12, p. 1, doi. 10.1007/s00339-017-1398-z

By:

Kaur, Kirandish;
Rani, Anita

Publication type:

Article

Ultra-low-noise microwave to optics conversion in gallium phosphide.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-34338-x

By:

Stockill, Robert;
Forsch, Moritz;
Hijazi, Frederick;
Beaudoin, Grégoire;
Pantzas, Konstantinos;
Sagnes, Isabelle;
Braive, Rémy;
Gröblacher, Simon

Publication type:

Article

Metasurface Photoelectrodes for Enhanced Solar Fuel Generation (Adv. Energy Mater. 46/2021).

Published in:

Advanced Energy Materials, 2021, v. 11, n. 46, p. 1, doi. 10.1002/aenm.202170180

By:

Hüttenhofer, Ludwig;
Golibrzuch, Matthias;
Bienek, Oliver;
Wendisch, Fedja J.;
Lin, Rui;
Becherer, Markus;
Sharp, Ian D.;
Maier, Stefan A.;
Cortés, Emiliano

Publication type:

Article

Metasurface Photoelectrodes for Enhanced Solar Fuel Generation.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 46, p. 1, doi. 10.1002/aenm.202102877

By:

Hüttenhofer, Ludwig;
Golibrzuch, Matthias;
Bienek, Oliver;
Wendisch, Fedja J.;
Lin, Rui;
Becherer, Markus;
Sharp, Ian D.;
Maier, Stefan A.;
Cortés, Emiliano

Publication type:

Article

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500131

By:

Perez, Erik;
LaComb, Ronald;
Jain, Faquir

Publication type:

Article

Tensometric Studies of the Composition of Arsenic and Phosphorus Vapor.

Published in:

Semiconductors, 2022, v. 56, n. 13, p. 403, doi. 10.1134/S1063782622130140

By:

Vigdorovich, E. N.

Publication type:

Article

Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1862, doi. 10.1134/S1063782620140286

By:

Sibirev, N. V.;
Fedorov, V. V.;
Kirilenko, D. A.;
Ubiyvovk, E. V.;
Berdnikov, Y. S.;
Bolshakov, A. D.;
Mukhin, I. S.

Publication type:

Article

Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1320, doi. 10.1134/S1063782620100267

By:

Sibirev, N. V.;
Berdnikov, Yu. S.;
Sibirev, V. N.

Publication type:

Article

Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds.

Published in:

Semiconductors, 2019, v. 53, n. 15, p. 2007, doi. 10.1134/S1063782619150132

By:

Vigdorovich, E. N.

Publication type:

Article

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327

By:

Sobolev, M. S.;
Lazarenko, A. A.;
Mizerov, A. M.;
Nikitina, E. V.;
Pirogov, E. V.;
Timoshnev, S. N.;
Bouravleuv, A. D.

Publication type:

Article

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X

By:

Fedorov, V. V.;
Bolshakov, A. D.;
Dvoretckaia, L. N.;
Sapunov, G. A.;
Kirilenko, D. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article