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Enhanced Tensile Strain in P-doped Ge Films Grown by Molecular Beam Epitaxy Using GaP and Sb Solid Sources.
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- Journal of Electronic Materials, 2019, v. 48, n. 7, p. 4674, doi. 10.1007/s11664-019-07254-y
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- Article
Study of Temperature Coefficients for Parameters of Photovoltaic Cells.
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- International Journal of Photoenergy, 2018, p. 1, doi. 10.1155/2018/5945602
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- Article
The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System.
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- Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4024, doi. 10.1007/s11664-017-5539-0
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- Article
First-principles calculations for mechanical and electronic features of strained GaP nanowires.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2017, v. 28, n. 3, p. -1, doi. 10.1142/S0129183117500395
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Features of spectra of low-energy neon ions scattered from gallium phosphide.
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- Technical Physics Letters, 2016, v. 42, n. 9, p. 915, doi. 10.1134/S106378501609011X
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Optimization of dressed-photon-phonon-assisted annealing for fabricating GaP light-emitting diodes.
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- Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 4, p. 1395, doi. 10.1007/s00339-015-9465-9
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- Article
Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues.
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- Crystals (2073-4352), 2014, v. 4, n. 2, p. 168, doi. 10.3390/cryst4020168
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- Article
Passivation of the GaP(111) surface by treatment in selenium vapors.
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- Technical Physics Letters, 2014, v. 40, n. 2, p. 104, doi. 10.1134/S1063785014020035
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- Article