Found: 20
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Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template.
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- Physica Status Solidi (B), 2019, v. 256, n. 2, p. N.PAG, doi. 10.1002/pssb.201800268
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- Article
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
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- Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299
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- Article
Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700190
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- Article
Amorphous GaN@Cu Freestanding Electrode for High-Performance Li-Ion Batteries.
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- Advanced Functional Materials, 2017, v. 27, n. 35, p. n/a, doi. 10.1002/adfm.201701808
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- Article
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment.
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- Semiconductors, 2017, v. 51, n. 2, p. 245, doi. 10.1134/S1063782617020063
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- Article
Moisture-Assisted Preparation of Compact GaN:ZnO Photoanode Toward Efficient Photoelectrochemical Water Oxidation.
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- Advanced Energy Materials, 2016, v. 6, n. 20, p. n/a, doi. 10.1002/aenm.201600864
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- Article
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 814, doi. 10.1002/pssb.201552649
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- Article
Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 819, doi. 10.1002/pssb.201552783
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- Article
Effect of SiC-on-Si template residual stress on GaN residual stress and crystal quality.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 824, doi. 10.1002/pssb.201552626
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- Article
Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 853, doi. 10.1002/pssb.201552642
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- Article
Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016).
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- Physica Status Solidi (B), 2016, v. 253, n. 4, p. 792, doi. 10.1002/pssb.201670525
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- Article
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride.
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- Semiconductors, 2016, v. 50, n. 2, p. 271, doi. 10.1134/S1063782616020135
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- Article
Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO(100) Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2670, doi. 10.1007/s11664-015-3705-9
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- Article
Synthesis and optical characterization of pure and cobalt doped gallium nitride nanocrystals.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 6068, doi. 10.1007/s10854-015-3184-z
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- Article
Light output improvement of 10 W operated vertical LEDs via surface roughening using a commercialized developer.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3397, doi. 10.1007/s10854-015-2846-1
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Defect-Related Luminescence in Undoped GaN Grown by HVPE.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4
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- Article
SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES.
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- Reviews on Advanced Materials Science, 2014, v. 38, n. 1, p. 75
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Synthesis and Field Emission Properties of Helical GaN Nanowires.
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- Journal of Electronic Materials, 2014, v. 43, n. 5, p. 1379, doi. 10.1007/s11664-014-3079-4
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- Article
Synthesis of oriented GaN phase on GaAs during surface heterosegregation.
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- Inorganic Materials, 2014, v. 50, n. 2, p. 136, doi. 10.1134/S0020168514020186
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- Article
Rapid thermal synthesis of GaN nanocrystals and nanodisks.
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- Journal of Nanoparticle Research, 2013, v. 15, n. 1, p. 1, doi. 10.1007/s11051-012-1411-6
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- Article