Works matching DE "GALLIUM nitride synthesis"

Results: 21

Amorphous GaN@Cu Freestanding Electrode for High-Performance Li-Ion Batteries.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 35, p. n/a, doi. 10.1002/adfm.201701808

By:

Ni, Shibing;
Huang, Peng;
Chao, Dongliang;
Yuan, Guodong;
Zhang, Lichun;
Zhao, Fengzhou;
Li, Jinmin

Publication type:

Article

Synthesis and optical characterization of pure and cobalt doped gallium nitride nanocrystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 6068, doi. 10.1007/s10854-015-3184-z

By:

Kumar, Dinesh;
Singh, Karamjit;
Kaur, Gurinder;
Verma, Veena;
Bhatti, H.

Publication type:

Article

Light output improvement of 10 W operated vertical LEDs via surface roughening using a commercialized developer.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3397, doi. 10.1007/s10854-015-2846-1

By:

Jeong, Tak;
Park, Hyung-Jo;
Jung, Ki;
Baek, Jong;
Ha, Jun-Seok;
Choi, Won-Sik;
Park, Si-Hyun

Publication type:

Article

Effect of SiC-on-Si template residual stress on GaN residual stress and crystal quality.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 824, doi. 10.1002/pssb.201552626

By:

Chai, Jessica;
Walker, Glenn;
Wang, Li;
Massoubre, David;
Iacopi, Alan

Publication type:

Article

Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 853, doi. 10.1002/pssb.201552642

By:

Tanner, Daniel P.;
Caro, Miguel A.;
O'Reilly, Eoin P.;
Schulz, Stefan

Publication type:

Article

Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 814, doi. 10.1002/pssb.201552649

By:

Kaneko, Mitsuaki;
Kimoto, Tsunenobu;
Suda, Jun

Publication type:

Article

Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 819, doi. 10.1002/pssb.201552783

By:

Okada, Narihito;
Ihara, Hiroshi;
Yamane, Keisuke;
Tadatomo, Kazuyuki

Publication type:

Article

Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016).

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 792, doi. 10.1002/pssb.201670525

By:

Hestroffer, Karine;
Lund, Cory;
Li, Haoran;
Keller, Stacia;
Speck, James S.;
Mishra, Umesh K.

Publication type:

Article

Rapid thermal synthesis of GaN nanocrystals and nanodisks.

Published in:

Journal of Nanoparticle Research, 2013, v. 15, n. 1, p. 1, doi. 10.1007/s11051-012-1411-6

By:

Sofer, Zdeněk;
Sedmidubský, David;
Huber, Štěpán;
Šimek, Petr;
Šaněk, Filip;
Jankovský, Ondřej;
Gregorová, Eva;
Fiala, Roman;
Matějková, Stanislava;
Mikulics, Martin

Publication type:

Article

Synthesis of oriented GaN phase on GaAs during surface heterosegregation.

Published in:

Inorganic Materials, 2014, v. 50, n. 2, p. 136, doi. 10.1134/S0020168514020186

By:

Tomashpolsky, Yu.;
Matyuk, V.;
Sadovskaya, N.

Publication type:

Article

Moisture-Assisted Preparation of Compact GaN:ZnO Photoanode Toward Efficient Photoelectrochemical Water Oxidation.

Published in:

Advanced Energy Materials, 2016, v. 6, n. 20, p. n/a, doi. 10.1002/aenm.201600864

By:

Wang, Zhiliang;
Han, Jingfeng;
Li, Zheng;
Li, Mingrun;
Wang, Hong;
Zong, Xu;
Li, Can

Publication type:

Article

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN.

Published in:

Science & Technology of Advanced Materials, 2016, v. 17, n. 1, p. 239, doi. 10.1080/14686996.2016.1178565

By:

Schubert, Felix;
Wirth, Steffen;
Zimmermann, Friederike;
Heitmann, Johannes;
Mikolajick, Thomas;
Schmult, Stefan

Publication type:

Article

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700190

By:

Rozhavskaya, Mariia M.;
Kukushkin, Sergey A.;
Osipov, Andrey V.;
Myasoedov, Alexandr V.;
Troshkov, Sergey I.;
Sorokin, Lev M.;
Brunkov, Pavel N.;
Baklanov, Alexandr V.;
Telyatnik, Rodion S.;
Juluri, Raghavendra R.;
Pedersen, Kjeld;
Popok, Vladimir N.

Publication type:

Article

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299

By:

Shtrom, I. V.;
Filosofov, N. G.;
Agekian, V. F.;
Smirnov, M. B.;
Serov, A. Yu.;
Reznik, R. R.;
Kudryavtsev, K. E.;
Cirlin, G. E.

Publication type:

Article

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 245, doi. 10.1134/S1063782617020063

By:

Erofeev, E.;
Fedin, I.;
Kutkov, I.;
Yuryev, Yu.

Publication type:

Article

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 271, doi. 10.1134/S1063782616020135

By:

Korolev, D.;
Mikhaylov, A.;
Belov, A.;
Vasiliev, V.;
Guseinov, D.;
Okulich, E.;
Shemukhin, A.;
Surodin, S.;
Nikolitchev, D.;
Nezhdanov, A.;
Pirogov, A.;
Pavlov, D.;
Tetelbaum, D.

Publication type:

Article

Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO(100) Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2670, doi. 10.1007/s11664-015-3705-9

By:

Yang, Weijia;
Wang, Wenliang;
Lin, Yunhao;
Liu, Zuolian;
Zhou, Shizhong;
Qian, Huirong;
Li, Guoqiang

Publication type:

Article

Defect-Related Luminescence in Undoped GaN Grown by HVPE.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4

By:

Reshchikov, M.A.;
Usikov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Synthesis and Field Emission Properties of Helical GaN Nanowires.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 5, p. 1379, doi. 10.1007/s11664-014-3079-4

By:

Li, Enling;
Song, Sha;
Ma, Deming;
Fu, Nannan;
Zhang, Yulong

Publication type:

Article

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template.

Published in:

Physica Status Solidi (B), 2019, v. 256, n. 2, p. N.PAG, doi. 10.1002/pssb.201800268

By:

Bessolov, Vasily;
Zubkova, Anna;
Konenkova, Elena;
Konenkov, Steven;
Kukushkin, Sergey;
Orlova, Tatiana;
Rodin, Sergey;
Rubets, Vladimir;
Kibalov, Dmitry;
Smirnov, Valery

Publication type:

Article

SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES.

Published in:

Reviews on Advanced Materials Science, 2014, v. 38, n. 1, p. 75

By:

Bessolov, V. N.;
Konenkova, E. V.;
Kukushkin, S. A.;
Osipov, A. V.;
Rodin, S. N.

Publication type:

Article