Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3200, doi. 10.1007/s10854-016-5909-z
- By:
- Publication type:
- Article
Works matching DE "GALLIUM nitride spectra"
Results: 8
1
2
MnY(MoO) Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2501, doi. 10.1007/s11664-017-5330-2
- By:
- Publication type:
- Article
3
Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO(100) Substrates.
- Published in:
- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2670, doi. 10.1007/s11664-015-3705-9
- By:
- Publication type:
- Article
4
GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1532, doi. 10.1049/el.2015.1684
- By:
- Publication type:
- Article
5
Response of ZnO/GaN Heterostructure to Ion Irradiation.
- Published in:
- 2015
- By:
- Publication type:
- Conference Paper/Materials
6
Design of a high sensitivity emitter-detector avalanche photodiode imager using very high transmittance, back-illuminated, silicon-on-sapphire.
- Published in:
- Optical Engineering, 2012, v. 51, n. 6, p. 1, doi. 10.1117/1.OE.51.6.063206
- By:
- Publication type:
- Article
7
Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification.
- Published in:
- Physica Status Solidi (B), 2018, v. 255, n. 10, p. N.PAG, doi. 10.1002/pssb.201800126
- By:
- Publication type:
- Article
8
Correlation of on-wafer 400 V dynamic behavior and trap characteristics of GaN-HEMTs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 4, p. 779, doi. 10.1002/pssa.201300523
- By:
- Publication type:
- Article