Works about GALLIUM nitride films

Results: 176

Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 16, p. 2305, doi. 10.1002/adfm.201303001

By:

ElAfandy, Rami T.;
Majid, Mohammed A.;
Ng, Tien Khee;
Zhao, Lan;
Cha, Dongkyu;
Ooi, Boon S.

Publication type:

Article

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons.

Published in:

Microscopy & Microanalysis, 2024, v. 30, n. 2, p. 208, doi. 10.1093/mam/ozae028

By:

Sarkar, Maruf;
Adams, Francesca;
Dar, Sidra A.;
Penn, Jordan;
Yihong Ji;
Gundimeda, Abhiram;
Tongtong Zhu;
Chaowang Liu;
Hirshy, Hassan;
Massabuau, Fabien C.-P.;
O'Hanlon, Thomas;
Kappers, Menno J.;
Ghosh, Saptarsi;
Kusch, Gunnar;
Oliver, Rachel A.

Publication type:

Article

High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate.

Published in:

Sensors & Materials, 2017, v. 29, n. 4, p. 363, doi. 10.18494/SAM.2017.1517

By:

Kuan-Ting Liu;
Shoou-Jinn Chang;
Sean Wu

Publication type:

Article

GaN Thin Films Deposited on n-Si (111) Substrate with a Metal Organic Chemical Vapor Deposition System for Sensing Ultraviolet Light.

Published in:

Sensors & Materials, 2016, v. 28, n. 6, p. 689, doi. 10.18494/sam.2016.1334

By:

Tse-Heng Chou

Publication type:

Article

BaZrO3/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba0.95La0.05SnO3 films on Al2O3 substrates, with very high transparency and X-band electromagnetic shielding

Published in:

NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00512-w

By:

Ha, Youngkyoung;
Jeon, Jingyeong;
Hwang, Subhin;
MacManus-Driscoll, Judith L.;
Lee, Shinbuhm

Publication type:

Article

Epitaxial Growth of δ‐Ga2O3 Thin Films Grown on YSZ and Sapphire Substrates Using β‐Fe2O3 Buffer Layers via Mist Chemical Vapor Deposition.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300582

By:

Kato, Takahiro;
Nishinaka, Hiroyuki;
Shimazoe, Kazuki;
Yoshimoto, Masahiro

Publication type:

Article

Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO2/Si Using the Crystal‐Ion‐Slicing Technique.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200028

By:

Zhu, Dailei;
Luo, Wenbo;
Wang, Kaibiao;
Xu, Jintao;
Huang, Shitian;
Shuai, Yao;
Wu, Chuangui;
Zhang, Wanli

Publication type:

Article

Enhanced Water‐Splitting Application Using GaN/AlGaN Heterojunctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 19, p. 1, doi. 10.1002/pssa.202200234

By:

Xi, Xin;
Chen, Zhizhong;
Zhao, Lixia;
Chen, Yiyong;
Nie, Jingxin;
Deng, Chuhan;
Pan, Zuojian;
Zhang, Haodong;
Kang, Xiangning

Publication type:

Article

Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique.

Published in:

Functional Materials Letters, 2021, v. 14, n. 5, p. 1, doi. 10.1142/S1793604721510243

By:

Lee, Zhi Yin;
Ng, Sha Shiong

Publication type:

Article

Study on the eletronic structure and effective mass of Mg–Fe co-doped GaN based on first principles.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, v. 35, n. 4, p. N.PAG, doi. 10.1142/S0217979221500569

By:

Jia, Wanli;
Li, Wenting;
Cao, Yuelong;
Wang, Xinmei;
Zhang, Lin;
Chen, Suguo;
He, Yang

Publication type:

Article

石墨烯薄膜与半导体界面热输运规律.

Published in:

Journal of China University of Petroleum, 2020, v. 44, n. 6, p. 103, doi. 10.3969/j.issn.1673-5005.2020.06.013

By:

刘明;
徐伟华;
许康;
王照亮

Publication type:

Article

A comprehensive investigation of the intermolecular interactions between CH2N2 and X12Y12 (X = B, Al, Ga; Y = N, P, As) nanocages.

Published in:

Canadian Journal of Chemistry, 2021, v. 99, n. 9, p. 733, doi. 10.1139/cjc-2020-0473

By:

Mohammadi, Mohsen Doust;
Abdullah, Hewa Y.;
Bhowmick, Somnath;
Biskos, George

Publication type:

Article

Contrasting E−H Bond Activation Pathways of a Phosphanyl‐Phosphagallene.

Published in:

Angewandte Chemie, 2021, v. 133, n. 40, p. 22228, doi. 10.1002/ange.202109334

By:

Feld, Joey;
Wilson, Daniel W. N.;
Goicoechea, Jose M.

Publication type:

Article

Light‐Induced Nonoxidative Coupling of Methane Using Stable Solid Solutions.

Published in:

Angewandte Chemie, 2021, v. 133, n. 38, p. 20928, doi. 10.1002/ange.202108870

By:

Wang, Guangming;
Mu, Xiaowei;
Li, Jiayang;
Zhan, Qingyun;
Qian, Yumeng;
Mu, Xiaoyue;
Li, Lu

Publication type:

Article

The study of light-emitting diode fabricated on c-axis patterned and flat sapphire substrate.

Published in:

Journal of Materials Science, 2015, v. 50, n. 19, p. 6359, doi. 10.1007/s10853-015-9185-8

By:

Li, Long;
Fang, YongZheng;
Zou, Jun;
Zhang, Canyun;
Wang, Fengchao;
Li, Yuefeng

Publication type:

Article

Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition.

Published in:

Journal of Materials Science, 2014, v. 49, n. 9, p. 3511, doi. 10.1007/s10853-014-8064-z

By:

Wang, Wenliang;
Yang, Weijia;
Liu, Zuolian;
Lin, Yunhao;
Zhou, Shizhong;
Qian, Huiromg;
Gao, Fangliang;
Wen, Lei;
Zhang, Shugang;
Li, Guoqiang

Publication type:

Article

Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth.

Published in:

Crystal Research & Technology, 2016, v. 51, n. 12, p. 762, doi. 10.1002/crat.201600265

By:

Skibinski, J.;
Caban, P.;
Wejrzanowski, T.;
Oliver, G.J.;
Kurzydlowski, K.J.

Publication type:

Article

Ga2O3 薄膜制备及能带调控综合性实验教学设计.

Published in:

Experimental Technology & Management, 2022, v. 39, n. 11, p. 156, doi. 10.16791/j.cnki.sjg.2022.11.027

By:

咸冯林;
陈柯宇;
赵立龙;
裴世鑫

Publication type:

Article

Defect Structure of α-Ga2O3 Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation.

Published in:

Technical Physics Letters, 2023, v. 49, p. S90, doi. 10.1134/S1063785023900455

By:

Myasoedov, A. V.;
Pavlov, I. S.;
Pechnikov, A. I.;
Stepanov, S. I.;
Nikolaev, V. I.

Publication type:

Article

Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.

Published in:

Technical Physics Letters, 2018, v. 44, n. 6, p. 525, doi. 10.1134/S1063785018060172

By:

Bessolov, V. N.;
Konenkova, E. V.;
Orlova, T. A.;
Rodin, S. N.;
Shcheglov, M. P.;
Kibalov, D. S.;
Smirnov, V. K.

Publication type:

Article

Polarization Effects on Intersubband Absorption in GaN/ZnGeN2 Quantum Wells.

Published in:

Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 4, p. 2772, doi. 10.21597/jist.955530

By:

ÇAKIR, Raşit

Publication type:

Article

Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001).

Published in:

Crystals (2073-4352), 2024, v. 14, n. 3, p. 201, doi. 10.3390/cryst14030201

By:

Lament, Katarzyna;
Grodzicki, Miłosz;
Wasielewski, Radosław;
Mazur, Piotr;
Ciszewski, Antoni

Publication type:

Article

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 613, doi. 10.3390/cryst13040613

By:

Valdez-Torija, Eduardo Alejandro;
Coyopol, Antonio;
García-Salgado, Godofredo;
Romano-Trujillo, Román;
Morales-Ruiz, Crisóforo;
Rosendo-Andrés, Enrique;
Vásquez-Agustín, Marco Antonio;
Gracia-Jiménez, Justo Miguel;
Galeazzi-Isasmendi, Reina;
Morales-Morales, Francisco

Publication type:

Article

Effect of the Growth Interruption on the Surface Morphology and Crystalline Quality of MOCVD-Grown h-BN.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 3, p. 486, doi. 10.3390/cryst13030486

By:

Zhang, Qi;
Guo, Yanan;
Liu, Zhibin;
Wang, Dadi;
Li, Qiang;
Yan, Jianchang;
Li, Jinmin;
Wang, Junxi

Publication type:

Article

Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 9, p. 772, doi. 10.3390/cryst10090772

By:

Yang, Yibin;
Zhang, Lingxia;
Zhao, Yu

Publication type:

Article

Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 7, p. 582, doi. 10.3390/cryst10070582

By:

Liu, Wei-Sheng;
Chang, Yu-Lin;
Tan, Chun-Yuan;
Tsai, Cheng-Ting;
Kuo, Hsing-Chun

Publication type:

Article

Effects of Thermal Annealing on Optical Properties of Be-Implanted GaN Thin Films by Spectroscopic Ellipsometry.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 6, p. 439, doi. 10.3390/cryst10060439

By:

Wei, Wenwang;
Wang, Jiabin;
Liu, Yao;
Peng, Yi;
Maraj, Mudassar;
Peng, Biaolin;
Wang, Yukun;
Sun, Wenhong

Publication type:

Article

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance.

Published in:

Coatings (2079-6412), 2024, v. 14, n. 11, p. 1457, doi. 10.3390/coatings14111457

By:

Wang, Ying;
Yao, Jiahao;
Yang, Yong;
Fan, Qian;
Ni, Xianfeng;
Gu, Xing

Publication type:

Article

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing.

Published in:

Coatings (2079-6412), 2024, v. 14, n. 4, p. 496, doi. 10.3390/coatings14040496

By:

Pei, Yang;
Fan, Qian;
Ni, Xianfeng;
Gu, Xing

Publication type:

Article

Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition.

Published in:

Coatings (2079-6412), 2023, v. 13, n. 6, p. 1111, doi. 10.3390/coatings13061111

By:

Khalfallah, Ali;
Benzarti, Zohra

Publication type:

Article

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 10, p. 1581, doi. 10.3390/coatings12101581

By:

Butcher, Kenneth Scott Alexander;
Georgiev, Vasil;
Georgieva, Dimka;
Gergova, Rositsa;
Terziyska, Penka;
Binsted, Peter W.

Publication type:

Article

Preparation of High-Thickness n − -Ga 2 O 3 Film by MOCVD.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 5, p. 645, doi. 10.3390/coatings12050645

By:

Zhao, Chunlei;
Jiao, Teng;
Chen, Wei;
Li, Zeming;
Dong, Xin;
Li, Zhengda;
Diao, Zhaoti;
Zhang, Yuantao;
Zhang, Baolin;
Du, Guotong

Publication type:

Article

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 5, p. 626, doi. 10.3390/coatings12050626

By:

Lenshin, Aleksandr;
Seredin, Pavel;
Goloshchapov, Dmitry;
Radam, Ali O.;
Mizerov, Andrey

Publication type:

Article

Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 4, p. 482, doi. 10.3390/coatings11040482

By:

Goswami, Ramasis;
Qadri, Syed;
Nepal, Neeraj;
Eddy Jr., Charles

Publication type:

Article

Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N.

Published in:

Coatings (2079-6412), 2020, v. 10, n. 11, p. 1069, doi. 10.3390/coatings10111069

By:

Tsay, Chien-Yie;
Chiu, Wan-Yu

Publication type:

Article

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition.

Published in:

Coatings (2079-6412), 2020, v. 10, n. 3, p. 210, doi. 10.3390/coatings10030210

By:

Thao, Cao Phuong;
Tuan, Thi Tran Anh;
Kuo, Dong-Hau;
Ke, Wen-Cheng;
Na, Thach Thi Via Sa

Publication type:

Article

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering.

Published in:

Coatings (2079-6412), 2019, v. 9, n. 12, p. 859, doi. 10.3390/coatings9120859

By:

Wang, Wei-Kai;
Liu, Kuo-Feng;
Tsai, Pi-Chuen;
Xu, Yi-Jie;
Huang, Shih-Yung

Publication type:

Article

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates.

Published in:

Coatings (2079-6412), 2019, v. 9, n. 8, p. 469, doi. 10.3390/coatings9080469

By:

Wang, Wei-Kai;
Xu, Yi-Jie;
Huang, Shih-Yung;
Liu, Kuo-Feng;
Tsai, Pi-Chuen

Publication type:

Article

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis.

Published in:

Coatings (2079-6412), 2017, v. 7, n. 3, p. 43, doi. 10.3390/coatings7030043

By:

Chih-Kai Hu;
Chun-Jung Chen;
Ta-Chin Wei;
Li, Tomi T.;
Ching-Chiun Wang;
Chih-Yung Huang

Publication type:

Article

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique.

Published in:

ISRN Otolaryngology, 2014, p. 1, doi. 10.1155/2014/521701

By:

Ghosh, D.;
Hussain, S.;
Ghosh, B.;
Bhar, R.;
Pal, A. K.

Publication type:

Article

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique.

Published in:

ISRN Materials Science, 2014, p. 1, doi. 10.1155/2014/521701

By:

Ghosh, D.;
Hussain, S.;
Ghosh, B.;
Bhar, R.;
Pal, A. K.

Publication type:

Article

MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1452, doi. 10.1007/s11664-020-08687-6

By:

Akcay, N.;
Tivanov, M.;
Ozcelik, S.

Publication type:

Article

Effects of Cooling Process on GaN Crystal Growth by Na Flux Method.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5260, doi. 10.1007/s11664-020-08230-7

By:

Zhou, Mingbin;
Li, Zhenrong;
Fan, Shiji;
Xiong, Zhihua;
Luo, Gen

Publication type:

Article

Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3036, doi. 10.1007/s11664-019-07035-7

By:

Yang, Xiaokun;
Gao, Qingxue;
Cao, Dezhong;
Mao, Hongzhi;
Zhao, Chongchong;
Luan, Caina;
Liu, Jianqiang;
Ma, Jin;
Xiao, Hongdi

Publication type:

Article

Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3727, doi. 10.1007/s11664-018-6232-7

By:

Özen, Soner;
Pat, Suat;
Korkmaz, Şadan

Publication type:

Article

Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2

By:

Lin, Kaifan;
Kuo, Dong-Hau

Publication type:

Article

Incorporation of Mg in Free-Standing HVPE GaN Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2692, doi. 10.1007/s11664-016-4413-9

By:

Zvanut, M.;
Dashdorj, J.;
Freitas, J.;
Glaser, E.;
Willoughby, W.;
Leach, J.;
Udwary, K.

Publication type:

Article

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2715, doi. 10.1007/s11664-014-3225-z

By:

Sui, Yanping;
Wang, Bin;
Zhao, Zhide;
Xu, Wei;
Li, Xiaoliang;
Yu, Guanghui;
Wang, Xinzhong

Publication type:

Article

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 3, p. 786, doi. 10.1007/s11664-013-2920-5

By:

Zhao, Z.;
Wang, B.;
Sui, Y.;
Xu, W.;
Li, X.;
Yu, G.

Publication type:

Article

Implantation Studies on Silicon-Doped GaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 21, doi. 10.1007/s11664-012-2278-0

By:

Simon, Ronnie;
Vianden, Reiner;
Köhler, Klaus

Publication type:

Article