Works matching DE "GALLIUM nitride films"

Results: 176

GaN Films deposited on ITO coated glass.

Published in:

Surface Engineering, 2015, v. 31, n. 7, p. 534, doi. 10.1179/1743294414Y.0000000410

By:

Zhao, J.;
Qin, F.;
Bai, Y.;
Zhao, Y.;
Wang, H.;
Kang, R.;
Pang, J.;
Jing, S.

Publication type:

Article

Incubation effect during laser micromachining of GaN films with femtosecond pulses.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16821, doi. 10.1007/s10854-019-01373-2

By:

Almeida, G. F. B.;
Nolasco, L. K.;
Barbosa, G. R.;
Schneider, A.;
Jaros, A.;
Manglano Clavero, I.;
Margenfeld, C.;
Waag, A.;
Voss, T.;
Mendonça, C. R.

Publication type:

Article

Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1738, doi. 10.1007/s10854-015-3948-5

By:

Huang, Zhen;
Zhang, Yuantao;
Zhao, Baijun;
Yang, Fan;
Jiang, Junyan;
Deng, Gaoqiang;
Li, Baozhu;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng

Publication type:

Article

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4268, doi. 10.1007/s10854-014-2159-9

By:

Tao, Pengcheng;
Liang, Hongwei;
Xia, Xiaochuan;
Feng, Qiuju;
Wang, Dongsheng;
Liu, Yang;
Shen, Rensheng;
Zhang, Kexiong;
Cai, Xin;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Effects of annealing on the structural properties of indium rich InGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1197, doi. 10.1007/s10854-014-1709-5

By:

Ma, Quan-Bao;
Lieten, Ruben;
Borghs, Gustaaf

Publication type:

Article

Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1404, doi. 10.1007/s10854-014-1742-4

By:

Li, Cheng-Che;
Kuo, Dong-Hau

Publication type:

Article

Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 969, doi. 10.1007/s10854-013-1673-5

By:

Qin, Fu-Wen;
Zhong, Miao-Miao;
Liu, Yue-Mei;
Wang, Hui;
Bian, Ji-Ming;
Wang, Chong;
Zhao, Yue;
Zhang, Dong;
Li, Qin-ming

Publication type:

Article

Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 12, p. 5069, doi. 10.1007/s10854-013-1525-3

By:

Qin, Fuwen;
Zhong, Miaomiao;
Wang, Chong;
Liu, Yuemei;
Bian, Jiming;
Wang, Enping;
Wang, Hui;
Zhang, Dong

Publication type:

Article

Characteristics of GaN thin films by inductively coupled plasma etching with Cl/BCl and Cl/Ar.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 6, p. 1224, doi. 10.1007/s10854-011-0577-5

By:

Yang, G.;
Chen, P.;
Wu, Z.;
Yu, Z.;
Zhao, H.;
Liu, B.;
Hua, X.;
Xie, Z.;
Xiu, X.;
Han, P.;
Shi, Y.;
Zhang, R.;
Zheng, Y.

Publication type:

Article

A FIRST-PRINCIPLES INVESTIGATION OF LITHIUM ADSORPTION AND DIFFUSION ON BN, AlN AND GaN MONOLAYERS.

Published in:

Eskişehir Technical University Journal of Science & Technology A - Applied Sciences & Engineering, 2019, v. 20, n. 4, p. 436, doi. 10.18038/estubtda.513854

By:

SARIKURT, Sevil

Publication type:

Article

Growth of Thin Cadmium Arsenide Films by Magnetron Sputtering and Their Structure.

Published in:

Inorganic Materials, 2019, v. 55, n. 9, p. 879, doi. 10.1134/S002016851909005X

By:

Kochura, A. V.;
Zakhvalinskii, V. S.;
Htet, Aung Zaw;
Ril', A. I.;
Pilyuk, E. A.;
Kuz'menko, A. P.;
Aronzon, B. A.;
Marenkin, S. F.

Publication type:

Article

Effect of Gallium Nitride Film Growth Conditions on Surface Segregation.

Published in:

Inorganic Materials, 2018, v. 54, n. 1, p. 26, doi. 10.1134/S0020168518010168

By:

Tomashpolsky, Yu. Ya.;
Matyuk, V. M.;
Sadovskaya, N. V.

Publication type:

Article

Ga2O3 薄膜制备及能带调控综合性实验教学设计.

Published in:

Experimental Technology & Management, 2022, v. 39, n. 11, p. 156, doi. 10.16791/j.cnki.sjg.2022.11.027

By:

咸冯林;
陈柯宇;
赵立龙;
裴世鑫

Publication type:

Article

不同雾流速率下α-Ga2O3 薄膜的超声雾化化学气相沉积法外延生长.

Published in:

Electroplating & Finishing, 2022, v. 41, n. 5, p. 364, doi. 10.19289/j.1004-227x.2022.05.012

By:

杨邻峰;
宁平凡;
李雄杰;
贾晓萍;
杨孟宇

Publication type:

Article

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100759

By:

Chen, Yang;
Shi, Zhiming;
Zhang, Shanli;
Ben, Jianwei;
Jiang, Ke;
Zang, Hang;
Jia, Yuping;
Lü, Wei;
Li, Dabing;
Sun, Xiaojuan

Publication type:

Article

Defect Structure of α-Ga2O3 Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation.

Published in:

Technical Physics Letters, 2023, v. 49, p. S90, doi. 10.1134/S1063785023900455

By:

Myasoedov, A. V.;
Pavlov, I. S.;
Pechnikov, A. I.;
Stepanov, S. I.;
Nikolaev, V. I.

Publication type:

Article

Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films.

Published in:

Applied Nanoscience, 2020, v. 10, n. 7, p. 2375, doi. 10.1007/s13204-020-01441-8

By:

Han, Xiaobin;
Zhang, Zhenyu;
Liu, Zhengmao;
Xu, Chao;
Lu, Xiaowei;
Sun, Lin;
Jiang, Peng

Publication type:

Article

Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 3, p. 1, doi. 10.1002/pssr.201700392

By:

Hainey, Jr., Mel F.;
Al Balushi, Zakaria Y.;
Wang, Ke;
Martin, Nathan C.;
Bansal, Anushka;
Chubarov, Mikhail;
Redwing, Joan M.

Publication type:

Article

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 682, doi. 10.1002/pssr.201600189

By:

Ullah, Md. Barkat;
Avrutin, Vitaliy;
Li, Si Qian;
Das, Saikat;
Monavarian, Morteza;
Toporkov, Mykyta;
Özgür, Ümit;
Ruterana, Pierre;
Morkoç, Hadis

Publication type:

Article

Structural and Magnetic Properties of Fe-Doped GaN by Sol-Gel Technique.

Published in:

Journal of Superconductivity & Novel Magnetism, 2020, v. 33, n. 9, p. 2767, doi. 10.1007/s10948-020-05458-6

By:

Muzammil, P.;
Basha, S. Munawar;
Muhammed, G. Shakil

Publication type:

Article

p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes.

Published in:: International Materials Reviews, 2014, v. 59, n. 2, p. 61, doi. 10.1179/1743280413Y.0000000025
Publication type:: Article

Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03213-2

By:

Cheang, P. L.;
Wong, E. K.;
Teo, L. L.

Publication type:

Article

Research on photoelectric properties of n-GaN (0001) surface with point defects via first-principles.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 7, p. N.PAG, doi. 10.1007/s11082-019-1940-7

By:

Ju, Ying;
Liu, Lei;
Lu, Feifei

Publication type:

Article

THERMODYNAMIC CALCULATION OF Fe-N AND Fe-Ga MELTING DIAGRAMS AT PRESSURES FROM 0.1 MPa TO 7 GPa.

Published in:

Progress in Physics of Metals / Uspehi Fiziki Metallov, 2021, v. 22, n. 4, p. 531, doi. 10.15407/ufm.22.04.531

By:

TURKEVYCH, Z. V.;
RUMIANTSEVA, Yu. Yu.;
HNATENKO, I. O.;
HLADKYI, I. O.;
SADOVA, Yu. I.

Publication type:

Article

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films.

Published in:

Optics & Spectroscopy, 2019, v. 127, n. 1, p. 36, doi. 10.1134/S0030400X19070208

By:

Novikova, N. N.;
Yakovlev, V. A.;
Klimin, S. A.;
Malin, T. V.;
Gilinsky, A. M.;
Zhuravlev, K. S.

Publication type:

Article

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices.

Published in:

Photonics, 2019, v. 6, n. 2, p. 44, doi. 10.3390/photonics6020044

By:

B. Kashyout, Abd El-Hady;
Fathy, Marwa;
Gad, Sara;
Badr, Yehia;
A. Bishara, Ahmed

Publication type:

Article

Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition.

Published in:

High Energy Chemistry, 2024, v. 58, n. 4, p. 440, doi. 10.1134/S0018143924700309

By:

Kudryashov, M. A.;
Mochalov, L. A.;
Kudryashova, Yu. P.;
Slapovskaya, E. A.

Publication type:

Article

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-07242-z

By:

Cooke, Jacqueline;
Ranga, Praneeth;
Jesenovec, Jani;
McCloy, John S.;
Krishnamoorthy, Sriram;
Scarpulla, Michael A.;
Sensale-Rodriguez, Berardi

Publication type:

Article

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05416-3

By:

Narita, Tetsuo;
Kanechika, Masakazu;
Kojima, Jun;
Watanabe, Hiroki;
Kondo, Takeshi;
Uesugi, Tsutomu;
Yamaguchi, Satoshi;
Kimoto, Yasuji;
Tomita, Kazuyoshi;
Nagasato, Yoshitaka;
Ikeda, Satoshi;
Kosaki, Masayoshi;
Oka, Tohru;
Suda, Jun

Publication type:

Article

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 2, p. 287, doi. 10.1007/s00339-008-4777-7

By:

Xue, Shoubin;
Zhang, Xing;
Huang, Ru;
Zhuang, Huizhao

Publication type:

Article

Selective Epitaxy of Submicron GaN Structures.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2118, doi. 10.1134/S1063782619120157

By:

Lundin, W. V.;
Tsatsulnikov, A. F.;
Rodin, S. N.;
Sakharov, A. V.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Voznyuk, G. V.;
Evtikhiev, V. P.

Publication type:

Article

InxAl1 –xN Solid Solutions: Composition Stability Issues.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1724, doi. 10.1134/S1063782619160061

By:

Brudnyi, V. N.;
Vilisova, M. D.;
Velikovskiy, L. E.

Publication type:

Article

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire.

Published in:

Semiconductors, 2017, v. 51, n. 1, p. 115, doi. 10.1134/S1063782617010249

By:

Voronenkov, V.;
Virko, M.;
Kogotkov, V.;
Leonidov, A.;
Pinchuk, A.;
Zubrilov, A.;
Gorbunov, R.;
Latishev, F.;
Bochkareva, N.;
Lelikov, Y.;
Tarkhin, D.;
Smirnov, A.;
Davydov, V.;
Sheremet, I.;
Shreter, Y.

Publication type:

Article

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n-GaN substrates.

Published in:

Semiconductors, 2016, v. 50, n. 5, p. 699, doi. 10.1134/S1063782616050250

By:

Virko, M.;
Kogotkov, V.;
Leonidov, A.;
Voronenkov, V.;
Rebane, Yu.;
Zubrilov, A.;
Gorbunov, R.;
Latyshev, P.;
Bochkareva, N.;
Lelikov, Yu.;
Tarhin, D.;
Smirnov, A.;
Davydov, V.;
Shreter, Yu.

Publication type:

Article

Capacitance-voltage characteristics of (Al/Ti)/AlO/ n-GaN MIS structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1035, doi. 10.1134/S1063782615080096

By:

Ivanov, P.;
Potapov, A.;
Nikolaev, A.;
Lundin, V.;
Sakharov, A.;
Tsatsulnikov, A.;
Afanas'ev, A.;
Romanov, A.;
Osachev, E.

Publication type:

Article

Intensity of emission from intracenter 4 f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 901, doi. 10.1134/S1063782612070135

By:

Mezdrogina, M.;
Eremenko, M.;
Terukov, E.;
Kozhanova, Yu.

Publication type:

Article

MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1452, doi. 10.1007/s11664-020-08687-6

By:

Akcay, N.;
Tivanov, M.;
Ozcelik, S.

Publication type:

Article

Effects of Cooling Process on GaN Crystal Growth by Na Flux Method.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5260, doi. 10.1007/s11664-020-08230-7

By:

Zhou, Mingbin;
Li, Zhenrong;
Fan, Shiji;
Xiong, Zhihua;
Luo, Gen

Publication type:

Article

Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3036, doi. 10.1007/s11664-019-07035-7

By:

Yang, Xiaokun;
Gao, Qingxue;
Cao, Dezhong;
Mao, Hongzhi;
Zhao, Chongchong;
Luan, Caina;
Liu, Jianqiang;
Ma, Jin;
Xiao, Hongdi

Publication type:

Article

Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3727, doi. 10.1007/s11664-018-6232-7

By:

Özen, Soner;
Pat, Suat;
Korkmaz, Şadan

Publication type:

Article

Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2

By:

Lin, Kaifan;
Kuo, Dong-Hau

Publication type:

Article

Incorporation of Mg in Free-Standing HVPE GaN Substrates.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2692, doi. 10.1007/s11664-016-4413-9

By:

Zvanut, M.;
Dashdorj, J.;
Freitas, J.;
Glaser, E.;
Willoughby, W.;
Leach, J.;
Udwary, K.

Publication type:

Article

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2715, doi. 10.1007/s11664-014-3225-z

By:

Sui, Yanping;
Wang, Bin;
Zhao, Zhide;
Xu, Wei;
Li, Xiaoliang;
Yu, Guanghui;
Wang, Xinzhong

Publication type:

Article

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 3, p. 786, doi. 10.1007/s11664-013-2920-5

By:

Zhao, Z.;
Wang, B.;
Sui, Y.;
Xu, W.;
Li, X.;
Yu, G.

Publication type:

Article

Implantation Studies on Silicon-Doped GaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 21, doi. 10.1007/s11664-012-2278-0

By:

Simon, Ronnie;
Vianden, Reiner;
Köhler, Klaus

Publication type:

Article

Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 16, p. 2305, doi. 10.1002/adfm.201303001

By:

ElAfandy, Rami T.;
Majid, Mohammed A.;
Ng, Tien Khee;
Zhao, Lan;
Cha, Dongkyu;
Ooi, Boon S.

Publication type:

Article

Electroless deposition of palladium films on gallium nitride for Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 10, p. 7598, doi. 10.1007/s10854-022-07907-5

By:

Dail, Steven P.;
Molina, Alex;
Campbell, Ian E.;
Mughal, Asad J.;
Mohney, Suzanne E.

Publication type:

Article

Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14336, doi. 10.1007/s10854-020-03993-5

By:

Khan, Ruby;
Arora, Aman;
Jain, Anubha;
Yadav, Brajesh S.;
Lohani, Jaya;
Goyal, Anshu;
Narang, Kapil;
Upadhyaya, Garima;
Singh, Vikash K.;
Saini, Sachin K.;
Raman, R.;
Padmavati, M. V. G.;
Tyagi, Renu;
Bag, Rajesh K.;
Riaz, Ufana

Publication type:

Article

Influence of III–V substrates on the texture, structural, and optical properties of CdS thin films deposited by chemical bath deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 5, p. 4170, doi. 10.1007/s10854-020-02967-x

By:

Vilchis, H.;
Conde, J.;
Santis, J. A.;
Pola-Albores, F.;
Arias-Cerón, J. S.;
Pantoja, J.;
Sánchez-R, V. M.

Publication type:

Article

Correlation between crystal structure and magnetism in PLD grown epitaxial films of e-Fe2O3 on GaN.

Published in:

Science & Technology of Advanced Materials, 2021, v. 22, n. 1, p. 85, doi. 10.1080/14686996.2020.1870870

By:

Suturin, Sergey M.;
Korovin, Alexander M.;
Sitnikova, Alla A.;
Kirilenko, Demid A.;
Volkov, Mikhail P.;
Dvortsova, Polina A.;
Ukleev, Victor A.;
Tabuchi, Masao;
Sokolov, Nikolai S.

Publication type:

Article