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Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing.
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- Coatings (2079-6412), 2024, v. 14, n. 4, p. 496, doi. 10.3390/coatings14040496
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- Article
Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons.
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- Microscopy & Microanalysis, 2024, v. 30, n. 2, p. 208, doi. 10.1093/mam/ozae028
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- Article
Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001).
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- Crystals (2073-4352), 2024, v. 14, n. 3, p. 201, doi. 10.3390/cryst14030201
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- Article
Enhancing Performance of Ultraviolet C Photodetectors Through Single‐Domain Epitaxy of Monoclinic β‐Ga<sub>2</sub>O<sub>3</sub> Films and Tailored Anti‐Reflection Coating.
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- Small Methods, 2024, v. 8, n. 1, p. 1, doi. 10.1002/smtd.202300933
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- Article
Defect Structure of α-Ga<sub>2</sub>O<sub>3</sub> Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation.
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- Technical Physics Letters, 2023, v. 49, p. S90, doi. 10.1134/S1063785023900455
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- Article
BaZrO<sub>3</sub>/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba<sub>0.95</sub>La<sub>0.05</sub>SnO<sub>3</sub> films on Al<sub>2</sub>O<sub>3</sub> substrates, with very high transparency and X-band electromagnetic shielding
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- NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00512-w
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Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.
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- Semiconductors, 2023, v. 57, n. 11, p. 508, doi. 10.1134/S106378262308016X
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- Article
Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate.
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- Technical Physics, 2023, v. 68, n. 11, p. 395, doi. 10.1134/S1063784223900048
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- Article
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200487
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Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition.
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- Coatings (2079-6412), 2023, v. 13, n. 6, p. 1111, doi. 10.3390/coatings13061111
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- Article
Recrystallization of MBE‐Grown MoS<sub>2</sub> Monolayers Induced by Annealing in a Chemical Vapor Deposition Furnace.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 5, p. 1, doi. 10.1002/pssr.202200476
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- Article
Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique.
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- Crystals (2073-4352), 2023, v. 13, n. 4, p. 613, doi. 10.3390/cryst13040613
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- Article
Effect of the Growth Interruption on the Surface Morphology and Crystalline Quality of MOCVD-Grown h-BN.
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- Crystals (2073-4352), 2023, v. 13, n. 3, p. 486, doi. 10.3390/cryst13030486
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- Article
掺杂对 GaN 晶体力学性能影响的研究.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 2, p. 229
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- Article
Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO<sub>2</sub>/Si Using the Crystal‐Ion‐Slicing Technique.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200028
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- Article
Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 1, p. 1, doi. 10.1002/pssb.202200279
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- Article
Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures.
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- Molecules, 2022, v. 27, n. 23, p. 8123, doi. 10.3390/molecules27238123
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- Article
Ga<sub>2</sub>O<sub>3</sub> 薄膜制备及能带调控综合性实验教学设计.
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- Experimental Technology & Management, 2022, v. 39, n. 11, p. 156, doi. 10.16791/j.cnki.sjg.2022.11.027
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Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction.
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- Coatings (2079-6412), 2022, v. 12, n. 10, p. 1581, doi. 10.3390/coatings12101581
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- Article
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6916, doi. 10.3390/ma15196916
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Nanotechnology for Electronic Materials and Devices.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 19, p. 3319, doi. 10.3390/nano12193319
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- Article
Enhanced Water‐Splitting Application Using GaN/AlGaN Heterojunctions.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 19, p. 1, doi. 10.1002/pssa.202200234
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- Article
Optimal Growth Conditions for Forming c -Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering.
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- Micromachines, 2022, v. 13, n. 9, p. 1546, doi. 10.3390/mi13091546
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- Article
Mechanochemical reactions of GaN-Al<sub>2</sub>O<sub>3</sub> interface at the nanoasperity contact: Roles of crystallographic polarity and ambient humidity.
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- Friction (2223-7704), 2022, v. 10, n. 7, p. 1005, doi. 10.1007/s40544-021-0501-9
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- Article
Effect of Growth Pressure on Properties of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Molecular Beam Epitax.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 7, p. 1152
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- Article
Effect of distributed Bragg reflectors on photoluminescence properties of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> film.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-14991-4
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- Article
X-ray Diffraction Analysis of the Structure In<sub>0.53</sub>Ga<sub>0.47</sub>As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer.
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- Crystallography Reports, 2022, v. 67, n. 3, p. 317, doi. 10.1134/S1063774522030075
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- Article
MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates.
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- Coatings (2079-6412), 2022, v. 12, n. 5, p. 626, doi. 10.3390/coatings12050626
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- Article
Preparation of High-Thickness n − -Ga 2 O 3 Film by MOCVD.
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- Coatings (2079-6412), 2022, v. 12, n. 5, p. 645, doi. 10.3390/coatings12050645
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- Article
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation.
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- Materials (1996-1944), 2022, v. 15, n. 9, p. 3005, doi. 10.3390/ma15093005
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- Article
A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics.
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- Surface & Interface Analysis: SIA, 2022, v. 54, n. 5, p. 576, doi. 10.1002/sia.7067
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- Article
Electroless deposition of palladium films on gallium nitride for Schottky diodes.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 10, p. 7598, doi. 10.1007/s10854-022-07907-5
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- Article
Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration.
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- Materials (1996-1944), 2022, v. 15, n. 7, p. 2543, doi. 10.3390/ma15072543
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- Article
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 6, p. 899, doi. 10.3390/nano12060899
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- Article
Exchange Coupling in Synthetic Anion‐Engineered Chromia Heterostructures.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202109828
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- Article
Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-07242-z
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- Article
Investigation on GaN-Based Membrane Photonic Crystal Surface Emitting Lasers.
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- Materials (1996-1944), 2022, v. 15, n. 4, p. 1479, doi. 10.3390/ma15041479
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- Article
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition.
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- Materials (1996-1944), 2022, v. 15, n. 3, p. 1050, doi. 10.3390/ma15031050
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- Article
Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 3, p. 478, doi. 10.3390/nano12030478
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- Article
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05416-3
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- Article
The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100759
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- Article
Polarization Effects on Intersubband Absorption in GaN/ZnGeN2 Quantum Wells.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 4, p. 2772, doi. 10.21597/jist.955530
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
Effect of Solution Concentration on Optical and Morphological Properties of Gallium Nitride Thin Films.
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- Acta Physica Polonica: A, 2021, v. 140, n. 4, p. 354, doi. 10.12693/APhysPolA.140.354
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- Article
Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes.
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- Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03213-2
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- Article
THERMODYNAMIC CALCULATION OF Fe-N AND Fe-Ga MELTING DIAGRAMS AT PRESSURES FROM 0.1 MPa TO 7 GPa.
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- Progress in Physics of Metals / Uspehi Fiziki Metallov, 2021, v. 22, n. 4, p. 531, doi. 10.15407/ufm.22.04.531
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- Article
Contrasting E−H Bond Activation Pathways of a Phosphanyl‐Phosphagallene.
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- Angewandte Chemie, 2021, v. 133, n. 40, p. 22228, doi. 10.1002/ange.202109334
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- Article
Light‐Induced Nonoxidative Coupling of Methane Using Stable Solid Solutions.
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- Angewandte Chemie, 2021, v. 133, n. 38, p. 20928, doi. 10.1002/ange.202108870
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- Article
A comprehensive investigation of the intermolecular interactions between CH<sub>2</sub>N<sub>2</sub> and X<sub>12</sub>Y<sub>12</sub> (X = B, Al, Ga; Y = N, P, As) nanocages.
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- Canadian Journal of Chemistry, 2021, v. 99, n. 9, p. 733, doi. 10.1139/cjc-2020-0473
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- Article
A Discrete Ligand-Free T3 Supertetrahedral Cluster of Gallium Sulfide.
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- Molecules, 2021, v. 26, n. 17, p. 5415, doi. 10.3390/molecules26175415
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- Article