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Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.
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- Semiconductors, 2018, v. 52, n. 16, p. 2117, doi. 10.1134/S1063782618160297
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- Article
The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5
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- Article
Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN interlayer.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10003, doi. 10.1007/s10854-016-5071-7
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- Article
Design of minimum order equiripple programmable band pass filter for transreceiver circuits.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 15, p. 1316, doi. 10.1049/el.2016.1043
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- Article
Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations.
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- Crystallography Reports, 2016, v. 61, n. 3, p. 428, doi. 10.1134/S1063774516030299
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- Article
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.
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- Scientific Reports, 2015, p. 1, doi. 10.1038/srep14734
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- Article
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.
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- Crystal Research & Technology, 2015, v. 50, n. 6, p. 425, doi. 10.1002/crat.201400468
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- Article
Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-0930-3
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- Article
On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers.
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- Scientific Reports, 2015, p. 9600, doi. 10.1038/srep09600
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- Article
Systematic study of epitaxy growth uniformity in a specific MOCVD reactor.
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- Crystal Research & Technology, 2014, v. 49, n. 11, p. 907, doi. 10.1002/crat.201400254
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- Article
Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN.
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- Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2667, doi. 10.1007/s11664-014-3115-4
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- Article
Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 7, p. 1655, doi. 10.1002/pssa.201330339
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- Article
Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN.
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- Semiconductors, 2013, v. 47, n. 3, p. 437, doi. 10.1134/S1063782613030226
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- Article
Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate.
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- Technical Physics Letters, 2013, v. 39, n. 3, p. 274, doi. 10.1134/S106378501303019X
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- Article
Gallium oxide buffer layers for gallium nitride epitaxy.
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- Optica Applicata, 2013, v. 43, n. 1, p. 73, doi. 10.5277/oa130110
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- Article
Substrates for spintronic structures based on epitaxial gallium nitride films.
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- Theoretical Foundations of Chemical Engineering, 2012, v. 46, n. 4, p. 387, doi. 10.1134/S0040579512040033
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- Article
Plasma-assisted MBE growth of GaN on Si(111) substrates.
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- Crystal Research & Technology, 2012, v. 47, n. 3, p. 307, doi. 10.1002/crat.201100408
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- Article