Works matching DE "GALLIUM nitride"

Results: 3373

On‐Chip Broadband Multiwavelength Microlaser Array in Visible Region.

Published in:

Laser & Photonics Reviews, 2025, v. 19, n. 14, p. 1, doi. 10.1002/lpor.202500151

By:

Ma, Lilong;
Zhong, Hongkun;
Yang, Tao;
Ying, Leiying;
Chen, Jinhui;
Su, Zhan;
Chen, Shaoqiang;
Weng, Guoen;
Mei, Yang;
Zhang, Baoping

Publication type:

Article

Surface Properties of p‐GaN and Formation of Nickel Metal Contacts.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 13, p. 1, doi. 10.1002/admi.202500163

By:

Miettinen, Mikko;
Nuutila, Vesa;
Jahanshah Rad, Zahra;
Ebrahimzadeh, Masoud;
Ruokonen, Anni;
Punkkinen, Risto;
Lehtiö, Juha‐Pekka;
Punkkinen, Marko;
Laukkanen, Pekka;
Kokko, Kalevi;
Suihkonen, Sami;
Savin, Hele;
Wang, Weimin

Publication type:

Article

基于氮化镓器件的 LLC 谐振变换器效率优化.

Published in:

Journal of Guilin University of Technology, 2025, v. 45, n. 2, p. 260, doi. 10.3969/j.issn.1674-9057.2025.02.015

By:

于雁南;
付学良;
李明通;
李大汉

Publication type:

Article

Dislocation-assisted electron and hole transport in GaN epitaxial layers.

Published in:

2025

By:

Yao, Yixu;
Huang, Sen;
Cao, Ruyue;
Zhang, Zhaofu;
Wang, Xinhua;
Jiang, Qimeng;
Shi, Jingyuan;
Zhang, Chenrui;
Liu, Jiaolong;
Wei, Ke;
Pei, Yi;
Zhang, Hui;
Qian, Hongtu;
Guo, Fuqiang;
Li, Guoping;
Tang, Ning;
Luo, Jun-Wei;
Ge, Weikun;
Liu, Xinyu;
Shen, Bo

Publication type:

Abstract

Multi-Path Precharge for GaN Flying-Capacitor-Multi-Level Totem-Pole PFC.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 13, p. 2637, doi. 10.3390/electronics14132637

By:

Ma, Qingxuan;
Huang, Qingyun;
Makain, Felice;
Huang, Alex Q.;
de Rooij, Michael A.

Publication type:

Article

High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 1048, doi. 10.3390/nano15131048

By:

Song, Jiahao;
Shi, Lang;
Cui, Siyuan;
Meng, Lingyue;
Zhou, Qianxi;
Jiang, Jingjing;
Jin, Conglong;
Hu, Jiahui;
Wen, Kuosheng;
Zhou, Shengjun

Publication type:

Article

DFT Study of Initial Surface Reactions in Gallium Nitride Atomic Layer Deposition Using Trimethylgallium and Ammonia.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 13, p. 7487, doi. 10.3390/app15137487

By:

Pansila, P. Pungboon;
Sukhasena, Seckson;
Sukprasong, Saksit;
Sriboon, Worasitti;
Temnuch, Wipawee;
Jamnongkan, Tongsai;
Promjun, Tanabat

Publication type:

Article

Developing gallium nitride-based inverters for high-performance photovoltaic integration in alternating current grids.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2025, v. 15, n. 3, p. 2583, doi. 10.11591/ijece.v15i3.pp2583-2598

By:

Soomar, Arsalan Muhammad;
Musznicki, Piotr

Publication type:

Article

Temperature-Dependent Characterization of 2-DEG for Single- and Double-Channel GaN on SiC HEMTs.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6812, doi. 10.1007/s11664-025-12035-x

By:

Alim, Mohammad Abdul;
Azad, Md. Omar Faruk;
Rahman, Asifur;
Ahmmed, Kazi Tanvir;
Jarndal, Anwar

Publication type:

Article

Stability of VTH and RON in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202401012

By:

Feng, Chao;
Liu, Xuan;
Li, Haiyang;
Mao, Danfeng;
Wu, Junye;
Wang, Yuhao;
Du, Rongxin;
Hu, Haolin;
Zeng, Wei;
Wang, Xiaoping;
Zhou, David;
Wan, Yuxi

Publication type:

Article

Effect of Barrier Layer Metal (X = Re, Mo, Ni, Ti, and Pd) on the Characteristics of Re–Al–X–Au‐Based Ohmic Contacts on n‐GaN.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400937

By:

Shah, Amit P.;
Chalke, Bhagyashree A.;
Bhattacharya, Arnab

Publication type:

Article

Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400880

By:

Shu, Qi;
Zhou, Kexin;
Kirchbrücher, Arno;
Kalisch, Holger;
Vescan, Andrei;
Debald, Arne;
Heuken, Michael

Publication type:

Article

Mobile Geräte optimiert laden.

Published in:: Elektronik Industrie, 2025, p. 18
Publication type:: Article

Im hermetisch versiegelten Keramikgehäuse.

Published in:: Elektronik Industrie, 2025, p. 63
Publication type:: Article

Cuckoo search-ExtraTrees model for Radio-frequency power amplifier under different temperatures.

Published in:

Frequenz, 2025, v. 79, n. 7/8, p. 433, doi. 10.1515/freq-2024-0298

By:

Sun, Jun;
Zhou, Shaohua

Publication type:

Article

Advances in Gallium Oxide: Properties, Applications, and Future Prospects.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400690

By:

Ganguly, Swapnodoot;
Nama Manjunatha, Krishna;
Paul, Shashi

Publication type:

Article

Design of a Series of Inverse Continuous Modes Power Amplifier Based on Bandpass Filter.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 7, p. 3949, doi. 10.1002/cta.4330

By:

Wang, Kun;
Cheng, Zhiqun;
Jia, Minshi;
Zhu, Zheming;
Zhong, Baoquan;
Yang, Zhenghao;
Li, Bingxin

Publication type:

Article

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier.

Published in:

Metrology, 2025, v. 4, n. 2, p. 21, doi. 10.3390/metrology5020021

By:

Orr, Gilad;
Azoulay, Moshe;
Golan, Gady;
Burger, Arnold

Publication type:

Article

Deep Ultraviolet BGaN Quantum Dot structures.

Published in:

University of Thi-Qar Journal of Science, 2021, v. 8, n. 2, p. 104, doi. 10.32792/utq/utjsci.v8i2.871

By:

Saad, Yasmeen;
AL-Khursan, Amin Habbeb;
.

Publication type:

Article

Full-Bridge DC-DC Converter with Synchronous Rectification Based on GaN Transistors.

Published in:

Journal of Low Power Electronics & Applications, 2025, v. 15, n. 2, p. 25, doi. 10.3390/jlpea15020025

By:

Wang, Xin;
Zhao, Qingsong;
Zhao, Zenglong;
Meng, Fanyi

Publication type:

Article

Effect of Dual Al 2 O 3 MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 687, doi. 10.3390/mi16060687

By:

Li, Yuan;
Huang, Yong;
Li, Jing;
Sun, Huiqing;
Guo, Zhiyou

Publication type:

Article

Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications.

Published in:

2025

By:

Liu, Wei;
Wang, Kun

Publication type:

Editorial

Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor.

Published in:

Materials (1996-1944), 2025, v. 18, n. 12, p. 2849, doi. 10.3390/ma18122849

By:

Janonis, Vytautas;
Cernescu, Adrian;
Prystawko, Pawel;
Januškevičius, Regimantas;
Indrišiūnas, Simonas;
Kašalynas, Irmantas

Publication type:

Article

METHOD OF VAPORIZING LIQUIDS BY MICROWAVE HEATING.

Published in:

Journal of Microwave Power & Electromagnetic Energy, 2004, v. 39, n. 1, p. 31, doi. 10.1080/08327823.2004.11688506

By:

Isom, Wendell W.;
Holmer, Art;
Natwora Jr, James;
Apte, Prasad

Publication type:

Article

INFLUENCE OF AMMONIATING TIME ON Nb-CATALYZED GaN NANOSTRUCTURED MATERIALS.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 6, p. 1209, doi. 10.1142/S0219581X11008290

By:

ZHUANG, HUIZHAO;
WANG, JIE;
ZHANG, XIAOKAI;
LI, JUNLIN

Publication type:

Article

STRUCTURAL CHARACTERISTICS OF 70 MeV Si5+ ION IRRADIATION INDUCED NANOCLUSTERS OF GALLIUM NITRIDE.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 823, doi. 10.1142/S0219581X11009246

By:

SURESH, S.;
GANESH, V.;
BALAJI, M.;
BASKAR, K.;
ASOKAN, K.;
KANJILAL, D.

Publication type:

Article

ROLE OF DEFECTS IN SHAPING THE MAGNETIC PROPERTIES OF Gd-DOPED GaN.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 555, doi. 10.1142/S0219581X11009386

By:

MISHRA, J. K.;
DHAR, S.;
KHADERABAD, M. A.

Publication type:

Article

FORMATION OF ONE-DIMENSIONAL Ga STRUCTURES ON Si(5 5 12)-2 × 1 TRENCHED TEMPLATES.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 1/2, p. 117, doi. 10.1142/S0219581X11007491

By:

KUMAR, PRAVEEN;
KUMAR, MAHESH;
GOVIND;
MEHTA, B. R.;
SHIVAPRASAD, S. M.

Publication type:

Article

GROWTH OF INDIUM-RICH NANOCRYSTALLINE INDIUM GALLIUM NITRIDE THIN FILMS BY MODIFIED ACTIVATED REACTIVE EVAPORATION.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 1/2, p. 141, doi. 10.1142/S0219581X11007612

By:

MEHER, S. R.;
BIJU, KUYYADI P.;
JAIN, MAHAVEER K.

Publication type:

Article

INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 327, doi. 10.1142/S0219581X07004882

By:

SIZOV, D. S.;
SIZOV, V. S.;
LUNDIN, V. V.;
ZAVARIN, E. E.;
TSATSUL'NIKOV, A. F.;
MUSIKHIN, YU. G.;
VLASOV, A. S.;
LEDENTSOV, N. N.;
MINTAIROV, A. M.;
SUN, K.;
MERZ, J.

Publication type:

Article

Photoresponse Characteristics of a Graphene Quantum Dot/GaN Metal–Semiconductor–Metal Ultraviolet Photodetector.

Published in:

Particle & Particle Systems Characterization, 2025, v. 42, n. 1, p. 1, doi. 10.1002/ppsc.202400114

By:

Pandit, Bhishma;
Cho, Jaehee

Publication type:

Article

Electronic Structure Investigation of GaN Nanowire Doped with Transition Metals Particles via First Principle.

Published in:

Particle & Particle Systems Characterization, 2022, v. 39, n. 3, p. 1, doi. 10.1002/ppsc.202100150

By:

Lu, Feifei;
Liu, Lei;
Tian, Jian

Publication type:

Article

RETROSPECT - Highlights from recent Annalen der Physik issues.

Published in:: 2015
Publication type:: Other

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture).

Published in:

Annalen der Physik, 2015, v. 527, n. 5/6, p. 327, doi. 10.1002/andp.201500802

By:

Amano, Hiroshi

Publication type:

Article

Biography of Nobel laureate Shuji Nakamura.

Published in:

Annalen der Physik, 2015, v. 527, n. 5/6, p. 350, doi. 10.1002/andp.201500804

By:

Nakamura, Shuji

Publication type:

Article

A Bamboo-Like GaN Microwire-Based Piezotronic Memristor.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5307, doi. 10.1002/adfm.201600962

By:

Liu, Haitao;
Hua, Qilin;
Yu, Ruomeng;
Yang, Yuchao;
Zhang, Taiping;
Zhang, Yingjiu;
Pan, Caofeng

Publication type:

Article

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 41, p. 6503, doi. 10.1002/adfm.201401438

By:

Xiong, Kanglin;
Park, Sung Hyun;
Song, Jie;
Yuan, Ge;
Chen, Danti;
Leung, Benjamin;
Han, Jung

Publication type:

Article

Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 28, p. 4491, doi. 10.1002/adfm.201470185

By:

Bayram, Can;
Ott, John A.;
Shiu, Kuen‐Ting;
Cheng, Cheng‐Wei;
Zhu, Yu;
Kim, Jeehwan;
Razeghi, Manijeh;
Sadana, Devendra K.

Publication type:

Article

Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 21, p. 3162, doi. 10.1002/adfm.201303671

By:

Lin, Yen‐Ting;
Yeh, Ting‐Wei;
Nakajima, Yoshitake;
Dapkus, P. Daniel

Publication type:

Article

Nanomembranes: Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes (Adv. Funct. Mater. 16/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 16, p. 2412, doi. 10.1002/adfm.201470104

By:

ElAfandy, Rami T.;
Majid, Mohammed A.;
Ng, Tien Khee;
Zhao, Lan;
Cha, Dongkyu;
Ooi, Boon S.

Publication type:

Article

Heat capacity of crystalline GaN.

Published in:

Journal of Thermal Analysis & Calorimetry, 2008, v. 91, n. 1, p. 329, doi. 10.1007/s10973-006-8317-4

By:

Zięborak-Tomaszkiewicz, Iwona;
Utzig, Ewa;
Gierycz, P.

Publication type:

Article

Some thermodynamic aspects of nitrides in materials science.

Published in:

Journal of Thermal Analysis & Calorimetry, 2006, v. 83, n. 3, p. 611, doi. 10.1007/s10973-005-7421-1

By:

Zięborak-Tomaszkiewicz, Iwona

Publication type:

Article

Optical properties of undoped and oxygen doped CuCl films on silicon substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 76, doi. 10.1007/s10854-007-9448-5

By:

Danieluk, Dominik;
Bradley, Ann L.;
Mitra, Anirban;
O'Reilly, Lisa;
Lucas, Olibanji F.;
Cowley, Aidan;
McNally, Patrick J.;
Foy, Barry;
McGlynn, Enda

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Effect of β-irradiation on photoluminescence of MOCVD grown GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 14, doi. 10.1007/s10854-008-9587-3

By:

Majid, Abdul;
Israr, M.;
Jianjun Zhu;
Ali, Akbar

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

The origin and reduction of dislocations in Gallium Nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 208, doi. 10.1007/s10854-008-9648-7

By:

Oliver, R. A.;
Kappers, M. J.;
McAleese, C.;
Datta, R.;
Sumner, J.;
Humphreys, C. J.

Publication type:

Article

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8

By:

Zhiguo Wang;
Xiaotao Zu;
Li Yang;
Fei Gao;
Weber, William J.

Publication type:

Article

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 471, doi. 10.1007/s10854-007-9365-7

By:

Deok Kyu Kim

Publication type:

Article

GaN based high temperature strain gauges.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 195, doi. 10.1007/s10854-007-9331-4

By:

Tilak, V.;
Jiang, J.;
Batoni, P.;
Knobloch, A.

Publication type:

Article