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Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance.
- Published in:
- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2024, v. 49, n. 7, p. 9983, doi. 10.1007/s13369-024-08705-3
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- Article
High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0
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- Article
Performance Analysis of AlN/GaN HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1
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- Article
Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3926, doi. 10.1007/s11664-024-11156-z
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- Article
Effect of Al<sub>2</sub>O<sub>3</sub> thickness and oxidant precursors on the interface composition and contamination in Al<sub>2</sub>O<sub>3</sub>/GaN structures.
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- Surface & Interface Analysis: SIA, 2024, v. 56, n. 7, p. 399, doi. 10.1002/sia.7299
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- Publication type:
- Article
Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement‐Mode GaN HEMT by Metal/Insulator/p‐GaN Gate Structure.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 12, p. 1, doi. 10.1002/pssa.202400146
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- Article
Perturbative effects on the optical extinction of GaN/AlN spherical QD in 0–0.5 eV range.
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- Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 6, p. 1, doi. 10.1007/s00339-024-07509-4
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- Publication type:
- Article
Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates.
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- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2143, doi. 10.3390/electronics13112143
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- Article
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit.
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- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2189, doi. 10.3390/electronics13112189
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- Article
Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems.
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- Energies (19961073), 2024, v. 17, n. 11, p. 2707, doi. 10.3390/en17112707
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- Publication type:
- Article
Field Emission Properties of Top–Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System.
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- Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2773, doi. 10.1007/s11664-023-10894-w
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- Publication type:
- Article
Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga<sub>2</sub>O<sub>3</sub> Substrate for RF and Power Electronics.
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- Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2973, doi. 10.1007/s11664-024-11005-z
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- Publication type:
- Article
Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 11, p. 2518, doi. 10.3390/ma17112518
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- Article
Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: sp 3 – sp 2 Transformation of Stoichiometric GaN(0001) Surface to (4 × 4) Pattern.
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- Materials (1996-1944), 2024, v. 17, n. 11, p. 2614, doi. 10.3390/ma17112614
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- Article
Patent Activity Surrounding GaN and Diamond Integration.
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- Microwave Journal, 2024, v. 67, p. 18
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- Article
GaN MMIC PA Operates 6 to 18 GHz.
- Published in:
- 2024
- Publication type:
- Product Review
Surface Charge: An Advantage for the Piezoelectric Properties of GaN Nanowires.
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- Nanoenergy Advances, 2024, v. 4, n. 2, p. 133, doi. 10.3390/nanoenergyadv4020008
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- Publication type:
- Article
Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 11, p. 1, doi. 10.1002/pssa.202400082
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- Article
Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies.
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- Plasmonics, 2024, v. 19, n. 3, p. 1121, doi. 10.1007/s11468-023-02062-x
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- Publication type:
- Article
First-principles study on electrical and optical properties of two-dimensional GaN/AlGaN heterostructures.
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- Modern Physics Letters B, 2024, v. 38, n. 14, p. 1, doi. 10.1142/S0217984924500489
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- Article
Study of equivalent circuit of GaN based laser chip and packaged laser.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-62078-z
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- Publication type:
- Article
Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy.
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- Applied Sciences (2076-3417), 2024, v. 14, n. 10, p. 4230, doi. 10.3390/app14104230
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- Article
Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors.
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- Electronics (2079-9292), 2024, v. 13, n. 10, p. 1840, doi. 10.3390/electronics13101840
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- Publication type:
- Article
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling.
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- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 10, p. 1, doi. 10.1049/ell2.13221
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- Publication type:
- Article
Study of MoN gate impact on GaN high electron mobility transistor.
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- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 10, p. 1, doi. 10.1049/ell2.13236
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- Publication type:
- Article
Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 10, p. 873, doi. 10.3390/nano14100873
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- Publication type:
- Article
Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT.
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- Aerospace (MDPI Publishing), 2024, v. 11, n. 5, p. 346, doi. 10.3390/aerospace11050346
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- Publication type:
- Article
Construction of Ag/Au bimetallic alloying nanoparticles on GaN films for high-performance SERS substrate, and modification of defect states.
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- Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 5, p. 1, doi. 10.1007/s00339-024-07539-y
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- Publication type:
- Article
Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiN x Interlayer.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 9, p. 1679, doi. 10.3390/electronics13091679
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- Publication type:
- Article
A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network.
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- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 5, p. 2218, doi. 10.1002/cta.3907
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- Publication type:
- Article
Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT.
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- Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2477, doi. 10.1007/s11664-024-10940-1
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- Publication type:
- Article
Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer.
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- Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2533, doi. 10.1007/s11664-024-10968-3
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- Publication type:
- Article
Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.
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- Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0
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- Publication type:
- Article
Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method.
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- Journal of Materials Science, 2024, v. 59, n. 17, p. 7318, doi. 10.1007/s10853-024-09613-5
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- Publication type:
- Article
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs.
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- Micromachines, 2024, v. 15, n. 5, p. 571, doi. 10.3390/mi15050571
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- Publication type:
- Article
Design of a Compact 2–6 GHz High-Efficiency and High-Gain GaN Power Amplifier.
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- Micromachines, 2024, v. 15, n. 5, p. 601, doi. 10.3390/mi15050601
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- Publication type:
- Article
Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors.
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- Micromachines, 2024, v. 15, n. 5, p. 611, doi. 10.3390/mi15050611
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- Publication type:
- Article
Gallium Nitride (GaN): Revolutionizing Industries with Advanced Semiconductor Technology.
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- Microwave Journal, 2024, v. 67, n. 5, p. 13
- Publication type:
- Article
Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 9, p. 748, doi. 10.3390/nano14090748
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- Article
Green second-harmonic generation in a periodically poled planar GaN waveguide.
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- Optical & Quantum Electronics, 2024, v. 56, n. 5, p. 1, doi. 10.1007/s11082-024-06506-4
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- Publication type:
- Article
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
- Published in:
- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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- Article
Why Is the Bandgap of GaP Indirect While That of GaAs and GaN Are Direct?
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 5, p. 1, doi. 10.1002/pssr.202300489
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- Article
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300806
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- Article
Analysis of Scalable Resonant DC–DC Converter Using GaN Switches for xEV Charging Stations.
- Published in:
- World Electric Vehicle Journal, 2024, v. 15, n. 5, p. 218, doi. 10.3390/wevj15050218
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- Publication type:
- Article
Indium Doped Gan Porous Micro‐Rods Enhanced CO<sub>2</sub> Reduction Driving By Solar Light.
- Published in:
- Advanced Materials Interfaces, 2024, v. 11, n. 12, p. 1, doi. 10.1002/admi.202301035
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- Article
Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.
- Published in:
- 2024
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- Publication type:
- Correction Notice
Magnetoresistance and Symmetry of a Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterostructures.
- Published in:
- 2024
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- Publication type:
- Correction Notice
Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 732, doi. 10.3390/nano14080732
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- Publication type:
- Article
Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors.
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- Electronics (2079-9292), 2024, v. 13, n. 7, p. 1203, doi. 10.3390/electronics13071203
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- Publication type:
- Article
Comparative Evaluation of Three-Phase Three-Level Flying Capacitor and Stacked Polyphase Bridge GaN Inverter Systems for Integrated Motor Drives.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 7, p. 1259, doi. 10.3390/electronics13071259
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- Publication type:
- Article