Works about GALLIUM compounds

Results: 727

NKT Cell-TCR Expression Activates Conventional T Cells in Vivo, but Is Largely Dispensable for Mature NKT Cell Biology.

Published in:

PLoS Biology, 2013, v. 11, n. 6, p. 1, doi. 10.1371/journal.pbio.1001589

By:

Vahl, J. Christoph;
Heger, Klaus;
Knies, Nathalie;
Hein, Marco Y.;
Boon, Louis;
Yagita, Hideo;
Polic, Bojan;
Schmidt-Supprian, Marc

Publication type:

Article

SWIFT HEAVY ION INDUCED NANOHILL FORMATION ON THE SURFACE OF GaP.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 1/2, p. 105, doi. 10.1142/S0219581X11007570

By:

DUBEY, R. L.;
DUBEY, S. K.;
YADAV, A. D.;
KANJILAL, D.

Publication type:

Article

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS:: OPTICAL PROPERTIES ENGINEERING AND APPLICATION.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 315, doi. 10.1142/S0219581X07004857

By:

KOVALYOV, A. A.;
PCHELYAKOV, O. P.;
PREOBRAZHENSKII, V. V.;
PUTYATO, M. M.;
RUBTSOVA, N. N.;
SOROKIN, E.;
SOROKINA, I. T.

Publication type:

Article

Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 28, p. 4491, doi. 10.1002/adfm.201470185

By:

Bayram, Can;
Ott, John A.;
Shiu, Kuen‐Ting;
Cheng, Cheng‐Wei;
Zhu, Yu;
Kim, Jeehwan;
Razeghi, Manijeh;
Sadana, Devendra K.

Publication type:

Article

Charge-Compensated Compound Defects in Ga-containing Thermoelectric Skutterudites.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 25, p. 3194, doi. 10.1002/adfm.201202571

By:

Qiu, Yuting;
Xi, Lili;
Shi, Xun;
Qiu, Pengfei;
Zhang, Wenqing;
Chen, Lidong;
Salvador, James R.;
Cho, Jung Y.;
Yang, Jihui;
Chien, Yuan‐chun;
Chen, Sinn‐wen;
Tang, Yinglu;
Snyder, G. Jeffrey

Publication type:

Article

GaPO4 high temperature crystal microbalance demonstration up to 720°C.

Published in:

Journal of Thermal Analysis & Calorimetry, 2003, v. 71, n. 1, p. 53, doi. 10.1023/A:1022249713714

By:

Thanner, H.;
Krempl, P. W.;
Selic, R.;
Wallnöfer, W.;
Worsch, P. M.

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8

By:

Zhiguo Wang;
Xiaotao Zu;
Li Yang;
Fei Gao;
Weber, William J.

Publication type:

Article

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 471, doi. 10.1007/s10854-007-9365-7

By:

Deok Kyu Kim

Publication type:

Article

Orientation of cracks in AlGaN epilayers with sapphire substrates.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 2, p. 113, doi. 10.1023/A:1021806702155

By:

Murray, R.T.;
Parbrook, P.J.;
Wood, D.A.

Publication type:

Article

Deciphering the Molecular Interaction Process of Gallium Maltolate on SARS-CoV-2 Main and Papain-Like Proteases: A Theoretical Study.

Published in:

Biophysica, 2024, v. 4, n. 2, p. 182, doi. 10.3390/biophysica4020013

By:

Taype-Huanca, Kevin;
Osorio, Manuel I.;
Inostroza, Diego;
Leyva-Parra, Luis;
Ruíz, Lina;
Valderrama-Negrón, Ana;
Alvarado-Huayhuaz, Jesús;
Yañez, Osvaldo;
Tiznado, William

Publication type:

Article

Intercalation Induced Electret Effect in GaSe and InSe Crystals: Experiment and Theory.

Published in:

Ferroelectrics, 2008, v. 362, n. 1, p. 115, doi. 10.1080/00150190802006764

By:

Stasyuk, I. V.;
Grygorchak, I. I.;
Velychko, O. V.

Publication type:

Article

EPR Studies of Chromium Doped Dimethylammonium Gallium and Aluminum Sulfate Hexahydrate (DMAGaS and DMAAS.

Published in:

Ferroelectrics, 2002, v. 268, n. 1, p. 181

By:

Volkel, G.;
Bottcher, R.;
Czapla, Z.;
Michel, D.

Publication type:

Article

The modulated structure of intermediate-valent CeCoGa.

Published in:

Zeitschrift für Kristallographie. Crystalline Materials, 2016, v. 231, n. 3, p. 143, doi. 10.1515/zkri-2015-1882

By:

Niehaus, Oliver;
Hoffmann, Rolf-Dieter;
Chevalier, Bernard;
Pöttgen, Rainer

Publication type:

Article

IR Li2Ga2GeS6 nanocrystallized GeS2-Ga2S3-Li2S electroconductive chalcogenide glass with good nonlinearity.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05719

By:

Qiming Liu;
Peng Zhang

Publication type:

Article

Inherent polarization entanglement generated from a monolithic semiconductor chip.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep02314

By:

Horn, Rolf T.;
Kolenderski, Piotr;
Kang, Dongpeng;
Abolghasem, Payam;
Scarcella, Carmelo;
Frera, Adriano Della;
Tosi, Alberto;
Helt, Lukas G.;
Zhukovsky, Sergei V.;
Sipe, J. E.;
Weihs, Gregor;
Helmy, Amr S.;
Jennewein, Thomas

Publication type:

Article

Optical Coefficients and PL Spectra with Variation in Ga-content in GaSeTe Thin Films: Visible Spectrum.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03019

By:

Chaudhary, Neeru;
Tripathi, S. K.;
Goyal, Navdeep

Publication type:

Article

Lanthanum-Gallium Tantalate Crystals and their Electrophysical Characterization.

Published in:

Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03034-1

By:

Kozlova, A. P.;
Kozlova, N. S.;
Anfimov, I. M.;
Kiselev, D. A.;
Bykov, A. S.

Publication type:

Article

Growth and Characterization of Nickel Catalyzed Gallium Oxide Nanowires on Sapphire Substrate.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02003-1

By:

Kumar, Sudheer;
Goud, B. Srinivas;
Singh, R.

Publication type:

Article

Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02001-1

By:

Kumar, Ashutosh;
Latzel, Michael;
Tessarek, C.;
Christiansen, S.;
Singh, R.

Publication type:

Article

Gallium-Protoporphyrin IX Inhibits Pseudomonas aeruginosa Growth by Targeting Cytochromes.

Published in:

Frontiers in Cellular & Infection Microbiology, 2017, v. 7, p. 1, doi. 10.3389/fcimb.2017.00012

By:

Hijazi, Sarah;
Visca, Paolo;
Frangipani, Emanuela

Publication type:

Article

The Structures of Yttrium Iron Garnet/Gadolinium Gallium Garnet Superlattice Thin Films Studied by Synchrotron X-Ray Surface Scattering.

Published in:

Journal of the Chinese Chemical Society, 2013, v. 60, n. 7, p. 870, doi. 10.1002/jccs.201200602

By:

Lee, Chih-Hao;
Liang, Keng S.;
Chern, M. Y.

Publication type:

Article

Magnetic spin excitations in Mn doped GaAs: a model study.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 81, n. 4, p. 405, doi. 10.1140/epjb/e2011-20320-x

By:

Chakraborty, A.;
Bouzerar, R.;
Bouzerar, G.

Publication type:

Article

The effects of the intense laser field on bound states in GaInNAsN/GaAs single quantum well.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 80, n. 1, p. 89, doi. 10.1140/epjb/e2011-10902-y

By:

Ungan, F.;
Kasapoglu, E.;
Duque, C. A.;
Yesilgul, U.;
Şakiroglu, S.;
Sökmen, I.

Publication type:

Article

Gallium compounds in nuclear medicine and oncology.

Published in:

Main Group Metal Chemistry, 2014, v. 37, n. 3/4, p. 53, doi. 10.1515/mgmc-2014-0009

By:

Mikuš, Peter;
Melník, Milan;
Forgácsová, Andrea;
Krajčiová, Dominika;
Havránek, Emil

Publication type:

Article

Stable GaX2, InX2 and TlX2 radicals.

Published in:

Nature Chemistry, 2014, v. 6, n. 4, p. 315, doi. 10.1038/nchem.1870

By:

Protchenko, Andrey V.;
Dange, Deepak;
Harmer, Jeffrey R.;
Tang, Christina Y.;
Schwarz, Andrew D.;
Kelly, Michael J.;
Phillips, Nicholas;
Tirfoin, Remi;
Birjkumar, Krishna Hassomal;
Jones, Cameron;
Kaltsoyannis, Nikolas;
Mountford, Philip;
Aldridge, Simon

Publication type:

Article

calculations of bismuth induced changes in band structure of InNBi, GaNBi and AlNBi alloys.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 11, p. -1, doi. 10.1142/S0217984918501269

By:

Zhang, Junyu;
Lu, Pengfei;
Chen, Yingjie;
Liang, Dan;
Zhang, Chunfang;
Quhe, Ruge;
Wang, Shumin

Publication type:

Article

Electrical and optical properties of Si-doped Ga2O3.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 15, p. -1, doi. 10.1142/S021798491750172X

By:

Li, Yin;
Yang, Chuanghua;
Wu, Liyuan;
Zhang, Ru

Publication type:

Article

Electron-phonon interaction in three-, two- and one-dimensional ternary mixed crystals.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 15, p. -1, doi. 10.1142/S0217984916501827

By:

Hou, Junhua;
Fan, Yunpeng

Publication type:

Article

Molecular dynamics simulations of gallium nitride nanosheets under uniaxial and biaxial tensile loads.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 5, p. -1, doi. 10.1142/S0217979218500510

By:

Rouhi, Saeed;
Pourmirzaagha, Hamoon;
Bidgoli, Mostafa Omidi

Publication type:

Article

Tunable energy gaps and mid-infrared optical properties in InAs/GaSb type-II superlattices.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 13, p. -1, doi. 10.1142/S0217979217500989

By:

Dong, H. M.;
Jin, Q.;
Wang, X. F.

Publication type:

Article

Targeting Gallium to Cancer Cells through the Folate Receptor.

Published in:

Drug Target Insights, 2008, n. 3, p. 13, doi. 10.4137/DTI.S651

By:

Viola-Villegas, Nerissa;
Vortherms, Anthony;
Doyle, Robert P.

Publication type:

Article

Systematic study of the relationships between energy levels of (Tl+)2, (In+)2, (Ga+)2 dimer centers and the crystalline environment.

Published in:

Canadian Journal of Chemistry, 2011, v. 89, n. 11, p. 1325, doi. 10.1139/v11-093

By:

Sun, Qiang;
Wang, Lili;
Gong, Liangyu;
Shi, Jinsheng

Publication type:

Article

Gallium-induced Deep Level in Pb[sub 1 – ][sub x]Ge[sub x]Te Alloys.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 894, doi. 10.1134/1.1188096

By:

Skipetrov, E. P.;
Zvereva, E. A.;
Belousov, V. V.;
Skipetrova, L. A.;
Slyn’ko, E. I.

Publication type:

Article

Deep-level recombination spectroscopy in GaP light-emitting diodes.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 668, doi. 10.1134/1.1187753

By:

Bulyarskiı, S. V.;
Vorob’ev, M. O.;
Grushko, N. S.;
Lakalin, A. V.

Publication type:

Article

Low-temperature relaxation of a solid solution of iron in gallium phosphide.

Published in:

Semiconductors, 1999, v. 33, n. 4, p. 377, doi. 10.1134/1.1187697

By:

Demidov, E. S.;
Karzanov, V. V.;
Gromoglasova, A. B.;
Morozkin, O. N.

Publication type:

Article

Photoconductivity of copper-compensated gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1040, doi. 10.1134/1.1187562

By:

Pribylov, N. N.;
Rembeza, S. I.;
Spirin, A. I.;
Buslov, V. A.;
Sushkov, S. A.

Publication type:

Article

Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1075, doi. 10.1134/1.1187570

By:

Agekyan, V. F.;
Ivanov-Omskiı, V. I.;
Knyazevskiı, V. N.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256

By:

Kunitsyn, A. E.;
Chaldyshev, V. V.;
Mil’vidskaya, A. G.;
Mil’vidskiı, M. G.

Publication type:

Article

Excitonic effects in the photoconductivity of quantum-well Ga[sub x]In[sub 1-x] As/InP structures.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 719, doi. 10.1134/1.1187273

By:

Panov, M. F.;
Pikhtin, A. N.

Publication type:

Article

Electronic and optical properties of GaS: A first-principles study.

Published in:: Gazi University Journal of Science, 2010, v. 23, n. 4, p. 413
Publication type:: Article

Thermodynamic Reassessment of the Gallium-Lithium Phase Diagram.

Published in:

Journal of Phase Equilibria & Diffusion, 2017, v. 38, n. 5, p. 788, doi. 10.1007/s11669-017-0567-2

By:

Azza, H.;
Selhaoui, N.;
Iddaoudi, A.;
Bouirden, L.

Publication type:

Article

First-Principles Calculations of Defect Structures in B2 AlCo and GaCo.

Published in:

Journal of Phase Equilibria & Diffusion, 2017, v. 38, n. 2, p. 143, doi. 10.1007/s11669-017-0526-y

By:

Kerboub, Abdelhak;
Belbacha, El-djemai;
Hidoussi, Aissam;
Djaballah, Yassine;
Belgacem-Bouzida, Aissa

Publication type:

Article

The Quasi-Ternary System CuSe-GaSe-GeSe.

Published in:

Journal of Phase Equilibria & Diffusion, 2013, v. 34, n. 2, p. 94, doi. 10.1007/s11669-013-0188-3

By:

Strok, O.M.;
Olekseyuk, I.D.;
Zmiy, O.F.;
Ivashchenko, I.A.;
Gulay, L.D.

Publication type:

Article

Cl-Ga (Chlorine-Gallium).

Published in:

Journal of Phase Equilibria & Diffusion, 2013, v. 34, n. 1, p. 66, doi. 10.1007/s11669-012-0132-y

By:

Okamoto, H.

Publication type:

Article

Ga-Sc (Gallium-Scandium).

Published in:

Journal of Phase Equilibria & Diffusion, 2012, v. 33, n. 3, p. 248, doi. 10.1007/s11669-012-0022-3

By:

Okamoto, H.

Publication type:

Article

Ga-O (Gallium-Oxygen).

Published in:

Journal of Phase Equilibria & Diffusion, 2008, v. 29, n. 6, p. 550, doi. 10.1007/s11669-008-9394-9

By:

Okamoto, H.

Publication type:

Article

Ga-Pd (Gallium-Palladium).

Published in:

Journal of Phase Equilibria & Diffusion, 2008, v. 29, n. 5, p. 466, doi. 10.1007/s11669-008-9363-3

By:

Okamoto, H.

Publication type:

Article

Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1948, doi. 10.1007/s11664-022-10145-4

By:

Purnachandra Rao, G.;
Lenka, Trupti Ranjan;
Singh, Rajan;
Boukortt, Nour El. I.;
Sadaf, Sharif Md.;
Nguyen, Hieu Pham Trung

Publication type:

Article

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article