Works matching DE "GALLIUM compounds"

Results: 725

Aluminium and Gallium Silylimides as Nitride Sources**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512

By:

Heilmann, Andreas;
Saddington, Artemis M.;
Goicoechea, Jose M.;
Aldridge, Simon

Publication type:

Article

A General Pathway towards NHC ⋅ GaH2(OTf) Adducts – The Key for the Synthesis of NHC‐Stabilized Cationic 13/15 Chain Compounds of Gallium.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 53, p. 1, doi. 10.1002/chem.202301752

By:

Szlosek, Robert;
Seidl, Michael;
Balázs, Gábor;
Scheer, Manfred

Publication type:

Article

Gallium Oxide Nanorods: Novel, Template-Free Synthesis and High Catalytic Activity in Epoxidation Reactions.

Published in:

Angewandte Chemie, 2014, v. 126, n. 6, p. 1611, doi. 10.1002/ange.201308384

By:

Lueangchaichaweng, Warunee;
Brooks, Neil R.;
Fiorilli, Sonia;
Gobechiya, Elena;
Lin, Kaifeng;
Li, Li;
Parres ‐ Esclapez, Sonia;
Javon, Elsa;
Bals, Sara;
Van Tendeloo, Gustaaf;
Martens, Johan A.;
Kirschhock, Christine E. A.;
Jacobs, Pierre A.;
Pescarmona, Paolo P.

Publication type:

Article

Anomalous photoluminescence and UV light sensing characteristics of ZnO:Ga nanowires—role of Ga content.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15285, doi. 10.1007/s10854-019-01901-0

By:

Riaz, Muhammad Shahid;
Nazir, Tahir;
Farooq, Ayesha;
Shehzad, Muhammad Arslan;
Bhatti, Arshad Saleem

Publication type:

Article

Tuning the extinction coefficient, refractive index, dielectric constant and optical conductivity of Gaq3 films for the application of OLED displays technology.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14777, doi. 10.1007/s10854-017-7347-y

By:

Muhammad, Fahmi;
Yahya, Mohd;
Aziz, Fakhra;
Rasheed, Mariwan;
Sulaiman, Khaulah

Publication type:

Article

Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7376, doi. 10.1007/s10854-017-6426-4

By:

Akin, N.;
Kinaci, B.;
Ozen, Y.;
Ozcelik, S.

Publication type:

Article

Physical properties of CdS:Ga thin films synthesized by spray pyrolysis technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3191, doi. 10.1007/s10854-016-5908-0

By:

Yılmaz, S.;
Polat, İ.;
Olgar, M.;
Tomakin, M.;
Töreli, S.;
Bacaksız, E.

Publication type:

Article

Superlattice-like GaSb/Sb films with ultra-high speed and low power for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3806, doi. 10.1007/s10854-016-5991-2

By:

Zou, Hua;
Zhu, Xiaoqin;
Hu, Yifeng;
Sui, Yongxing;
Zheng, Long;
Wu, Weihua;
Zhai, Liangjun;
Xue, Jianzhong;
Song, Zhitang

Publication type:

Article

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 845, doi. 10.1007/s10854-016-5599-6

By:

Chang, Edward;
Hsiao, Chih-Jen;
Chang, Sheng-Po;
Chang, Shoou-Jinn;
Ha, Minh-Thien-Huu;
Nguyen, Hong-Quan;
Yu, Hung-Wei;
Wong, Yuen-Yee;
Liu, Chun-Kuan;
Maa, Jer-Shen

Publication type:

Article

Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4647, doi. 10.1007/s10854-016-4342-7

By:

Sen, S.;
Chakraborty, N.;
Rana, P.;
Sahu, R.;
Singh, S.;
Panda, A.;
Tripathy, S.;
Pradhan, D.;
Sen, A.

Publication type:

Article

Improved near-infrared up-conversion emission of YAG:Yb,Tm phosphor substituted by Gallium and Indium.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 992, doi. 10.1007/s10854-015-3843-0

By:

Liu, Qian;
Zhang, Wei;
Hu, Zheng-fa;
Feng, Zu-yong;
Ma, Lun;
Zhang, Xiu-ping;
Sheng, Xia;
Luo, Jie

Publication type:

Article

Electrical properties of Si doped GaO films grown by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9624, doi. 10.1007/s10854-015-3627-6

By:

Zhang, Fabi;
Saito, Katsuhiko;
Tanaka, Tooru;
Nishio, Mitsuhiro;
Guo, Qixin

Publication type:

Article

Synthesis, characterization and growth mechanism of β-GaO nano- and micrometer particles by catalyzed chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 7731, doi. 10.1007/s10854-015-3417-1

By:

Wei, Jiyong;
Zang, Zongjuan;
Shi, Feng

Publication type:

Article

Characterization of Sn-doped β-GaO films deposited on MgO (100) substrate by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 7889, doi. 10.1007/s10854-015-3440-2

By:

Mi, Wei;
Ma, Jin;
Li, Zhao;
Luan, Caina;
Xiao, Hongdi

Publication type:

Article

A study on photo-induced crystallization in GaSeTl thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 6206, doi. 10.1007/s10854-015-3204-z

By:

Tripathi, Ravi;
Akhtar, M.;
Alvi, M.;
Khan, Shamshad

Publication type:

Article

The lattice distortion of β-GaO film grown on c-plane sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3231, doi. 10.1007/s10854-015-2821-x

By:

Chen, Yuanpeng;
Liang, Hongwei;
Xia, Xiaochuan;
Tao, Pengcheng;
Shen, Rensheng;
Liu, Yang;
Feng, Yanbin;
Zheng, Yuehong;
Li, Xiaona;
Du, Guotong

Publication type:

Article

Influence of sputtering power on the properties of thin layers of GZO for photovoltaic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3336, doi. 10.1007/s10854-015-2836-3

By:

Mahdhi, H.;
Ayadi, Z.;
Gauffier, J.;
Djessas, K.;
Alaya, S.

Publication type:

Article

Synthesis of β-GaO nanorods by catalyzed chemical vapor deposition and their characterization.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1368, doi. 10.1007/s10854-014-2548-0

By:

Wei, Jiyong;
Zang, Zongjuan;
Xue, Chengshan;
Shi, Feng

Publication type:

Article

Growth characteristics and device properties of MOD derived β-GaO films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3629, doi. 10.1007/s10854-014-2066-0

By:

Guo, Pei;
Xiong, Jie;
Zhao, Xiaohui;
Sheng, Tuo;
Yue, Chao;
Tao, Bowan;
Liu, Xingzhao

Publication type:

Article

Growth of regular-shaped β-GaO nanorods by Ni-ion-catalyzed chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 181, doi. 10.1007/s10854-013-1570-y

By:

Zhao, Yuefeng;
Liu, Shulian;
Wang, Yiqian;
Shi, Feng;
Zang, Zongjuan

Publication type:

Article

Piezoelectric and ferroelectric properties of Ga modified BiFeO-BaTiO lead-free ceramics with high Curie temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 196, doi. 10.1007/s10854-013-1573-8

By:

Zhou, Qin;
Zhou, Changrong;
Yang, Huabin;
Yuan, Changlai;
Chen, Guohua;
Cao, Lei;
Fan, Qiaolan

Publication type:

Article

Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 581, doi. 10.1007/s10854-013-1626-z

By:

Sun, Yurun;
Li, Kuilong;
Dong, Jianrong;
Zeng, Xulu;
Yu, Shuzhen;
Zhao, Yongming;
Zhao, Chunyu;
Yang, Hui

Publication type:

Article

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 12, p. 5122, doi. 10.1007/s10854-013-1533-3

By:

Cheng, Yi;
Yang, Kun;
Peng, Yong;
Yin, Yan;
Chen, Jixiang;
Jing, Bo;
Liang, Hongwei;
Du, Guotong

Publication type:

Article

High-temperature thermoelectric properties of Ca3−xPrxCo3.95Ga0.05O9+δ.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 12, p. 4857, doi. 10.1007/s10854-013-1488-4

By:

Bhaskar, Ankam;
Jhang, C.-S.;
Liu, Chia-Jyi;
Hsieh, Huey-Lin;
Huang, Jing-Yi

Publication type:

Article

Study on growth and characterizations of GaInP/GaAs solar cell structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 9, p. 3269, doi. 10.1007/s10854-013-1242-y

By:

Kınacı, B.;
Özen, Y.;
Asar, T.;
Çetin, S.;
Memmedli, T.;
Kasap, M.;
Özçelik, S.

Publication type:

Article

Improvement of crystal quality and UV transparence of dielectric GaO thin films via thermal annealing in N atmosphere.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 2, p. 542, doi. 10.1007/s10854-011-0433-7

By:

Liu, Yuanda;
Xia, Xiaochuan;
Liang, Hongwei;
Zhang, Hezhi;
Bian, Jiming;
Liu, Yang;
Shen, Rensheng;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8

By:

Zhiguo Wang;
Xiaotao Zu;
Li Yang;
Fei Gao;
Weber, William J.

Publication type:

Article

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 471, doi. 10.1007/s10854-007-9365-7

By:

Deok Kyu Kim

Publication type:

Article

Evolution of gallium applications in medicine and microbiology: a timeline.

Published in:

BioMetals, 2022, v. 35, n. 4, p. 675, doi. 10.1007/s10534-022-00406-4

By:

de Assis, Amanda Stefanie Jabur;
Pegoraro, Guilherme Manassés;
Duarte, Iolanda Cristina Silveira

Publication type:

Article

Gallium nitrate induces fibrinogen flocculation: an explanation for its hemostatic effect?

Published in:

BioMetals, 2013, v. 26, n. 6, p. 935, doi. 10.1007/s10534-013-9669-4

By:

Bauters, A.;
Holt, D. J.;
Zerbib, P.;
Rogosnitzky, M.

Publication type:

Article

Gallium(III) complexes with 2-acetylpyridine-derived thiosemicarbazones: antimicrobial and cytotoxic effects and investigation on the interactions with tubulin.

Published in:

BioMetals, 2013, v. 26, n. 1, p. 151, doi. 10.1007/s10534-012-9603-1

By:

Lessa, Josane;
Soares, Marcella;
dos Santos, Raquel;
Mendes, Isolda;
Salum, Lívia;
Daghestani, Hikmat;
Andricopulo, Adriano;
Day, Billy;
Vogt, Andreas;
Beraldo, Heloisa

Publication type:

Article

Electrochemical impedance spectroscopic analysis of aluminum and gallium mixed matrix membranes.

Published in:

Journal of Solid State Electrochemistry, 2020, v. 24, n. 4, p. 961, doi. 10.1007/s10008-020-04548-8

By:

Parveen, Kousar;
Rafique, Uzaira;
Akhtar, Muhammad Javed;
Younas, Muhammad;
Ashokumar, Muthupandian

Publication type:

Article

Physical properties of metal-doped ZnO thin films prepared by RF magnetron sputtering at room temperature.

Published in:

Journal of Solid State Electrochemistry, 2019, v. 23, n. 12, p. 3217, doi. 10.1007/s10008-019-04312-7

By:

Mahdhi, Hayet;
Ayadi, Z. Ben;
Djessas, K.

Publication type:

Article

Crystal structure and high-temperature electrical conductivity of novel perovskite-related gallium and indium oxides.

Published in:

Journal of Solid State Electrochemistry, 2014, v. 18, n. 5, p. 1415, doi. 10.1007/s10008-013-2190-4

By:

Istomin, S.;
Antipov, E.;
Fedotov, Yu.;
Bredikhin, S.;
Lyskov, N.;
Shafeie, S.;
Svensson, G.;
Liu, Y.;
Shen, Z.

Publication type:

Article

Mechanism of AC charge transport in TlSbGaS ( x = 0 and 0.03).

Published in:

Inorganic Materials, 2017, v. 53, n. 12, p. 1228, doi. 10.1134/S0020168517120020

By:

Asadov, S.;
Mustafaeva, S.

Publication type:

Article

Effect of bismuth on parameters of a GaInSbAsP solid solution grown on GaSb substrates.

Published in:

Inorganic Materials, 2017, v. 53, n. 1, p. 57, doi. 10.1134/S0020168517010010

By:

Alfimova, D.;
Lunin, L.;
Lunina, M.;
Pashchenko, A.;
Chebotarev, S.

Publication type:

Article

Preparation of ZnGaS by reacting GaI and ZnI with sulfur.

Published in:

Inorganic Materials, 2016, v. 52, n. 7, p. 650, doi. 10.1134/S0020168516070141

By:

Velmuzhov, A.;
Sukhanov, M.;
Suchkov, A.;
Churbanov, M.;
Tyurina, E.

Publication type:

Article

Heat capacity of the MVO (M = Al, Ga, In, Tl) orthovanadates.

Published in:

Inorganic Materials, 2016, v. 52, n. 6, p. 573, doi. 10.1134/S0020168516060030

By:

Denisova, L.;
Kargin, Yu.;
Chumilina, L.;
Denisov, V.

Publication type:

Article

Epitaxial growth of GaAs thin layers on NiSb substrates.

Published in:

Inorganic Materials, 2015, v. 51, n. 2, p. 83, doi. 10.1134/S002016851501001X

By:

Aitkhozhin, S.;
Artemov, A.;
Belousov, P.;
Bobylev, M.;
Kaevitser, E.;
Lyubchenko, V.;
Petrov, K.;
Temirov, Yu.;
Farafonov, S.

Publication type:

Article

Describing the heat capacity of III-VI compound semiconductors in a fractal model.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 903, doi. 10.1134/S0020168514090155

By:

Tyurin, A.;
Izotov, A.;
Gavrichev, K.;
Zlomanov, V.

Publication type:

Article

Heat capacity and thermodynamic properties of GaFeO in the range 330-900 K.

Published in:

Inorganic Materials, 2013, v. 49, n. 12, p. 1227, doi. 10.1134/S0020168513120042

By:

Denisov, V.;
Irtyugo, L.;
Denisova, L.;
Patrin, G.;
Volkov, N.

Publication type:

Article

Ga- and Ti-containing NiNbO-based solid solutions for Ni-Selective electrodes.

Published in:

Inorganic Materials, 2013, v. 49, n. 10, p. 1044, doi. 10.1134/S002016851309015X

By:

Podkorytov, A.;
Shtin, S.;
Kashapova, A.;
Luppov, A.;
Shubina, N.

Publication type:

Article

GaInBiAsSb/InSb and InBiAsSb/InSb heterostructures grown in a temperature gradient.

Published in:

Inorganic Materials, 2012, v. 48, n. 9, p. 877, doi. 10.1134/S0020168512090154

By:

Sinel'nikov, B.;
Lunina, M.

Publication type:

Article

Preparation and properties of electrets based on iodine-intercalated InSe and GaSe.

Published in:

Inorganic Materials, 2012, v. 48, n. 8, p. 776, doi. 10.1134/S0020168512080092

By:

Kovalyuk, Z.;
Duplavyy, V.

Publication type:

Article

Effect of thallium doping on the parameters of localized states in p-GaSe single crystals.

Published in:

Inorganic Materials, 2011, v. 47, n. 9, p. 941, doi. 10.1134/S0020168511090160

By:

Mustafaeva, S.;
Asadov, M.;
Ismailov, A.

Publication type:

Article

New forms of In2Se3 and Ga2Se3 prepared by reacting InAs and GaAs substrates with selenium.

Published in:

Inorganic Materials, 2009, v. 45, n. 10, p. 1087, doi. 10.1134/S0020168509100033

By:

Budanov, A.;
Tatokhin, E.;
Strygin, V.;
Rudnev, E.

Publication type:

Article

SAW study of the interaction at the GaAs surface during Au deposition.

Published in:

Inorganic Materials, 2009, v. 45, n. 8, p. 835, doi. 10.1134/S0020168509080019

By:

Bryantseva, T. A.;
Lyubchenko, D. V.;
Markov, I. A.;
Tolmachev, E. M.

Publication type:

Article

Excitonic absorption in GaSe and InSe crystals under picosecond excitation.

Published in:

Inorganic Materials, 2007, v. 43, n. 12, p. 1275, doi. 10.1134/S0020168507120023

By:

Kyazym-zade, A. G.;
Agaeva, A. A.;
Salmanov, V. M.;
Mokhtari, A. G.

Publication type:

Article

Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates.

Published in:

Inorganic Materials, 2006, v. 42, n. 12, p. 1342, doi. 10.1134/S0020168506120107

By:

Rogozin, I.;
Georgobiani, A.

Publication type:

Article