Works matching DE "GALLIUM arsenide transistors"

Results: 59

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors.

Published in:

Journal of Low Temperature Physics, 2025, v. 219, n. 5, p. 242, doi. 10.1007/s10909-024-03256-1

By:

Feldman, M. M.;
Fuchs, G.;
Liu, T.;
D'Imperio, L. A.;
Henry, M. D.;
Shaner, E. A.;
Lyon, S. A.

Publication type:

Article

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 703, doi. 10.1002/pssr.201600227

By:

Liu, Li Ning;
Choi, Hoi Wai;
Xu, Jing Ping;
Lai, Pui To

Publication type:

Article

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays.

Published in:

Instruments & Experimental Techniques, 2018, v. 61, n. 5, p. 665, doi. 10.1134/S0020441218040176

By:

Chernykh, S. V.;
Chernykh, A. V.;
Chubenko, A. P.;
Pavlyuchenko, L. N.;
Sveshnikov, Yu. N.;
Glybin, Yu. N.;
Konovalov, M. P.;
Panichkin, A. V.;
Didenko, S. I.

Publication type:

Article

Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands.

Published in:

Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2015, v. 14, n. 1, p. AoP14, doi. 10.1590/2179-10742015v14i1423

By:

Leggieri, Alberto;
Passi, Davide;
Gagliesi, Daniele;
Di Paolo, Franco

Publication type:

Article

Output Stages of Operational Amplifiers Based on Gallium Arsenide NJFET and Bipolar PNP Transistors.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2023, v. 16, n. 2, p. 25

By:

A. A., Zhuk;
N. N., Prokopenko;
V. E., Chumakov;
A. V., Kunts

Publication type:

Article

Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24

By:

Chumakov V. E.;
Serebryakov A. I.;
Titov A. E.;
Prokopenko N. N.

Publication type:

Article

Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178

By:

Shobolova, T. A.;
Korotkov, A. V.;
Petryakova, E. V.;
Lipatnikov, A. V.;
Puzanov, A. S.;
Obolensky, S. V.;
Kozlov, V. A.

Publication type:

Article

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060

By:

Baidus, N. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Krasilnik, Z. F.;
Kudryavtsev, K. E.;
Nekorkin, S. M.;
Novikov, A. V.;
Rykov, A. V.;
Reunov, D. G.;
Shaleev, M. V.;
Yunin, P. A.;
Yurasov, D. V.

Publication type:

Article

Localization-Delocalization Transition in Disordered One-Dimensional Exciton-Polariton System.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 458, doi. 10.1134/S106378261804019X

By:

Larionov, A. V.;
Brichkin, A. S.;
Höfling, S.;
Kulakovskii, V. D.

Publication type:

Article

Contactless characterization of manganese and carbon delta-layers in gallium arsenide.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1420, doi. 10.1134/S1063782617110161

By:

Komkov, O.;
Kudrin, A.

Publication type:

Article

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136

By:

Gorshkov, A.;
Volkova, N.;
Voronin, P.;
Zdoroveyshchev, A.;
Istomin, L.;
Pavlov, D.;
Usov, Yu.;
Levichev, S.

Publication type:

Article

Features of the selective manganese doping of GaAs structures.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148

By:

Kalentyeva, I.;
Vikhrova, O.;
Danilov, Yu.;
Zvonkov, B.;
Kudrin, A.;
Dorokhin, M.;
Pavlov, D.;
Antonov, I.;
Drozdov, M.;
Usov, Yu.

Publication type:

Article

Inhomogeneous dopant distribution in III-V nanowires.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1427, doi. 10.1134/S1063782617110173

By:

Leshchenko, E.;
Dubrovskii, V.

Publication type:

Article

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185

By:

Maleev, N.;
Belyakov, V.;
Vasil'ev, A.;
Bobrov, M.;
Blokhin, S.;
Kulagina, M.;
Kuzmenkov, A.;
Nevedomskii, V.;
Guseva, Yu.;
Maleev, S.;
Ladenkov, I.;
Fefelova, E.;
Fefelov, A.;
Ustinov, V.

Publication type:

Article

Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1435, doi. 10.1134/S1063782617110288

By:

Zabavichev, I.;
Obolenskaya, E.;
Potekhin, A.;
Puzanov, A.;
Obolensky, S.;
Kozlov, V.

Publication type:

Article

Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1466, doi. 10.1134/S106378261711029X

By:

Zabavichev, I.;
Potekhin, A.;
Puzanov, A.;
Obolenskiy, S.;
Kozlov, V.

Publication type:

Article

Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1481, doi. 10.1134/S1063782617110082

By:

Borisov, V.;
Kuvshinova, N.;
Kurochka, S.;
Sizov, V.;
Stepushkin, M.;
Temiryazev, A.

Publication type:

Article

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1513, doi. 10.1134/S1063782617110203

By:

Nikiforov, V.;
Abramkin, D.;
Shamirzaev, T.

Publication type:

Article

Optical thyristor based on GaAs/InGaP materials.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1391, doi. 10.1134/S1063782617110306

By:

Zvonkov, B.;
Baidus, N.;
Nekorkin, S.;
Vikhrova, O.;
Zdoroveyshev, A.;
Kudrin, A.;
Kotomina, V.

Publication type:

Article

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1527, doi. 10.1134/S1063782617110070

By:

Baidus, N.;
Aleshkin, V.;
Dubinov, A.;
Kudryavtsev, K.;
Nekorkin, S.;
Novikov, A.;
Pavlov, D.;
Rykov, A.;
Sushkov, A.;
Shaleev, M.;
Yunin, P.;
Yurasov, D.;
Yablonskiy, A.;
Krasilnik, Z.

Publication type:

Article

Microdisk Injection Lasers for the 1.27-μm Spectral Range.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131

By:

Kryzhanovskaya, N.;
Maximov, M.;
Blokhin, S.;
Bobrov, M.;
Kulagina, M.;
Troshkov, S.;
Zadiranov, Yu.;
Lipovskii, A.;
Moiseev, E.;
Kudashova, Yu.;
Livshits, D.;
Ustinov, V.;
Zhukov, A.

Publication type:

Article

Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078

By:

Galiev, G.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 584, doi. 10.1134/S1063782614050248

By:

Zaitsev, D.;
Seisyan, R.

Publication type:

Article

Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029

By:

Belevskii, P.;
Vinoslavkii, M.;
Poroshin, V.;
Baidus, N.;
Zvonkov, B.

Publication type:

Article

Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 804, doi. 10.1134/S1063782613060237

By:

Seyid-Rzayeva, S.

Publication type:

Article

Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT transistor.

Published in:

Journal of Engineering (17264073), 2021, v. 27, n. 2, p. 13, doi. 10.31026/j.eng.2021.02.02

By:

Ballouk, Abdo;
Mofdi, Fawaz;
Ibrahim, Salem

Publication type:

Article

Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots.

Published in:

Superficies y Vacío, 2017, v. 30, n. 4, p. 56, doi. 10.47566/2017_syv30_1-040056

By:

Sánchez-Trujillo, D. J.;
Prías-Barragán, J. J.;
Ariza-Calderón, H.;
Pulzara-Mora, A. O.;
López-López, M.

Publication type:

Article

Electric field effects on exciton in the shape of transmission spectra in high-purity GaAs at room temperature.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 2, p. 203, doi. 10.1007/s11082-014-9901-7

By:

Sapkota, Durga;
Kayastha, Madhu;
Wakita, Koichi

Publication type:

Article

Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 2, p. 423, doi. 10.1007/s11082-014-9924-0

By:

Zhang, Peng;
Jiang, Maohua;
Men, Yanbin;
Zhu, Renjiang;
Liang, Yiping;
Zhang, Yu

Publication type:

Article

Pre-emphasis enabled 50 Gbit/s transmission over 1000 m SMF using a 1060 nm single-mode VCSEL.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1186, doi. 10.1049/el.2018.6170

By:

Lengyel, T.;
Simpanen, E.;
Gustavsson, J. S.;
Larsson, A.;
Karlsson, M.;
Andrekson, P. A.;
Sorin, W. V.;
Mathai, S.;
Tan, M. R.;
Bickham, S.

Publication type:

Article

340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1180, doi. 10.1049/el.2018.5856

By:

Mingxun Li;
Xin Lv;
Jinchao Mou;
Dalu Guo;
Haidong Qiao;
Zhaohui Ma;
Haidong Hao

Publication type:

Article

Enhancing performance of a InGaP/GaAs VCO by means of a switching architecture.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 11, p. 695, doi. 10.1049/el.2018.0965

By:

Pantoli, L.;
Arena, S.;
Cavanna, T.

Publication type:

Article

Memory characteristics of capacitors with poly-GaAs floating gates.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 11, p. 963, doi. 10.1049/el.2015.3823

By:

Roh, I. P.;
Kang, N. S.;
Shin, S. H.;
Oh, Y. T.;
Kim, K. B.;
Song, J. D.;
Song, Y. H.

Publication type:

Article

Terahertz wireless communication using GaAs transistors as detectors.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 4, p. 323, doi. 10.1049/el.2013.3702

By:

Tohmé, L.;
Blin, S.;
Ducournau, G.;
Nouvel, P.;
Coquillat, D.;
Hisatake, S.;
Nagatsuma, T.;
Pénarier, A.;
Varani, L.;
Knap, W.;
Lampin, J.-F.

Publication type:

Article

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer.

Published in:

Scientific Reports, 2015, p. 7860, doi. 10.1038/srep07860

By:

Nadda, Kanika;
Kumar, M. Jagadesh

Publication type:

Article

BJT Based Translinear Implementation of an Evolutionary Optimised Non-Linear Function for Sensor Linearisation.

Published in:

IETE Journal of Research, 2024, v. 70, n. 6, p. 5905, doi. 10.1080/03772063.2023.2273294

By:

S., Sundararajan;
Kottarthil Naduvil, Madhusoodanan;
Abudhahir, A.;
Kathiah, Saravanan

Publication type:

Article

Simultaneous effects of pressure and temperature on excitons in Pöschl-Teller quantum well.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500503

By:

Anitha, A.;
Arulmozhi, M.

Publication type:

Article

High‐efficiency balanced power amplifier using miniaturized harmonics suppressed coupler.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 8, p. 1, doi. 10.1002/mmce.22252

By:

Hookari, Mohsen;
Roshani, Saeed;
Roshani, Sobhan

Publication type:

Article

Neuro-space mapping modeling approach for trapping and self-heating effects on GaAs and GaN devices.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2017, v. 27, n. 6, p. n/a, doi. 10.1002/mmce.21106

By:

Elhamadi, Taj‐eddin;
Boussouis, Mohamed;
Touhami, Naima Amar;
Lamsalli, Mohammed

Publication type:

Article

1/f2 spectra of decoherence noise on 75As nuclear spins in bulk GaAs.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-67636-9

By:

Sasaki, Susumu;
Miura, Takanori;
Ikeda, Kosuke;
Sakai, Masahiro;
Sekikawa, Takuya;
Saito, Masaki;
Yuge, Tatsuro;
Hirayama, Yoshiro

Publication type:

Article

Effect of Mobility on (I-V) Characteristics of Gaas MESFET.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 169, doi. 10.11591/ijece.v7i1.pp169-175

By:

Azizi, M.;
Azizi, C.

Publication type:

Article

Formation of Nanoscale T-Shaped Gates Using Directional Angular Deposition of Thin Aluminum Films.

Published in:

Russian Physics Journal, 2021, v. 64, n. 2, p. 261, doi. 10.1007/s11182-021-02324-3

By:

Kulinich, I. V.;
Kazimirov, A. I.;
Shesterikov, E. I.

Publication type:

Article

Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.

Published in:

Russian Physics Journal, 2013, v. 56, n. 1, p. 55, doi. 10.1007/s11182-013-9994-7

By:

Emelyanov, E.;
Kokhanenko, A.;
Pchelyakov, O.;
Loshkarev, I.;
Seleznev, V.;
Putyato, M.;
Semyagin, B.;
Preobrazhenskii, V.;
Niu, Zhicuan;
Ni, Haiqiao

Publication type:

Article

Sheaf Attention–Based Osprey Spiking Neural Network for Effective Thermal Management and Self‐Heating Mitigation in GaAs and GaN HEMTs.

Published in:

Heat Transfer, 2025, v. 54, n. 3, p. 2377, doi. 10.1002/htj.23294

By:

Iype, Preethi Elizabeth;
Suresh Babu, V.;
Paul, Geenu

Publication type:

Article

Adhesive bonding for mechanically stacked solar cells.

Published in:

Progress in Photovoltaics, 2015, v. 23, n. 9, p. 1080, doi. 10.1002/pip.2517

By:

Mathews, Ian;
O'Mahony, Donagh;
Thomas, Kevin;
Pelucchi, Emanuele;
Corbett, Brian;
Morrison, Alan P.

Publication type:

Article

Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.

Published in:

Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104

By:

Galiev, G.;
Trunkin, I.;
Klimov, E.;
Klochkov, A.;
Vasiliev, A.;
Imamov, R.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures.

Published in:

Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114

By:

Galiev, G. B.;
Klimov, E. A.;
Klochkov, A. N.;
Maltsev, P. P.;
Pushkarev, S. S.;
Zhigalina, O. M.;
Imamov, R. M.;
Kuskova, A. N.;
Khmelenin, D. N.

Publication type:

Article

Microstrip Power Amplifier Design for ISM Band Using Balanced Amplifier Topology.

Published in:

International Journal of Microwave & Optical Technology, 2020, v. 15, n. 4, p. 289

By:

Rachakh, Amine;
El Abdellaoui, Larbi;
Zbitou, Jamal;
Errkik, Ahmed;
Tajmouati, Abdelali;
Latrach, Mohamed

Publication type:

Article

A 2.1 to 4.6 GHz Wideband Low Noise Amplifier Using ATF10136.

Published in:

International Journal of Microwave & Optical Technology, 2013, v. 8, n. 1, p. 6

By:

Meloui, M.;
Akhchaf, I.;
Srifi, M. Nabil;
Essaaidi, M.

Publication type:

Article

Design of a pHEMT RF mixer based on compact microstrip diplexer.

Published in:: International Journal of Microwave & Wireless Technologies, 2024, v. 16, n. 9, p. 1, doi. 10.1017/S1759078724000916
Publication type:: Article