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The Study of DC- and AC-Driven GaAs-Coupled Gas Discharge Micro Plasma Systems: Modeling and Simulation.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3792, doi. 10.1007/s11664-024-11098-6
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- Article
Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor.
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- Optical & Quantum Electronics, 2023, v. 55, n. 7, p. 1, doi. 10.1007/s11082-023-04931-5
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- Article
Pulse Width Control Based on Blumlein Pulse Forming Line and SI-GaAs PCSS.
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- Photonics, 2023, v. 10, n. 2, p. 156, doi. 10.3390/photonics10020156
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- Article
Far‐Field Polarization Engineering from Nonlinear Nanoresonators.
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- Laser & Photonics Reviews, 2022, v. 16, n. 12, p. 1, doi. 10.1002/lpor.202200183
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- Article
Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 13, p. 2220, doi. 10.3390/nano12132220
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- Article
Grating Structure Broadband Absorber Based on Gallium Arsenide and Titanium.
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- Coatings (2079-6412), 2022, v. 12, n. 5, p. 588, doi. 10.3390/coatings12050588
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- Article
Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix.
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- Journal of Nanomaterials, 2022, p. 1, doi. 10.1155/2022/3767355
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- Article
Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots.
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- Applications & Applied Mathematics, 2021, v. 16, n. 2, p. 1029
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- Publication type:
- Article
Combined photothermal lens and photothermal mirror Z-scan of semiconductors.
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- Applied Physics B: Lasers & Optics, 2021, v. 127, n. 8, p. 1, doi. 10.1007/s00340-021-07661-2
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- Article
STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.
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- Revista Cubana de Física, 2021, v. 38, n. 1, p. 4
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- Article
Towards single-chip radiofrequency signal processing via acoustoelectric electron–phonon interactions.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22935-1
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- Article
Application of Next Generation Sequencing (NGS) in Phage Displayed Peptide Selection to Support the Identification of Arsenic-Binding Motifs.
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- Viruses (1999-4915), 2020, v. 12, n. 12, p. 1360, doi. 10.3390/v12121360
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- Article
Insights Into Digital Predistortion System Design.
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- Microwave Journal, 2020, v. 63, n. 4, p. 64
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- Article
Computational study of Ga<sub>n</sub>As<sub>m</sub> (m + n = 2–9) clusters using DFT calculations.
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- Journal of Nanoparticle Research, 2019, v. 21, n. 11, p. N.PAG, doi. 10.1007/s11051-019-4664-5
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- Publication type:
- Article
Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 12, p. 711, doi. 10.1049/el.2019.0601
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- Publication type:
- Article
Accurate measurement of electric potentials in biased GaAs compound semiconductors by phase-shifting electron holography.
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- Microscopy, 2019, v. 68, n. 2, p. 159, doi. 10.1093/jmicro/dfy131
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- Article
Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3585, doi. 10.1007/s11664-018-6203-z
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- Article
FABS and LABS.
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- Microwave Journal, 2018, v. 61, n. 7, p. 114
- Publication type:
- Article
CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/-GaAs SCHOTTKY CONTACTS.
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- Surface Review & Letters, 2018, v. 25, n. 4, p. -1, doi. 10.1142/S0218625X18500828
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- Article
Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs.
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- Technical Physics Letters, 2018, v. 44, n. 6, p. 465, doi. 10.1134/S106378501806007X
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- Article
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.
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- Semiconductors, 2018, v. 52, n. 3, p. 366, doi. 10.1134/S1063782618030120
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- Article
Effect of Dot Size on Exciton Energy States Confined in a Spherical Gallium Arsenide Quantum Dot.
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2018, v. 16, n. 1, p. 175
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- Article
Investigation in band structures of GaAs/AlGaAs nanostructures superlattices at high magnetic field and low temperatures.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 1, p. 1, doi. 10.1007/s00339-016-0688-1
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- Publication type:
- Article
Electronic transport and band structures of GaAs/AlAs nanostructures superlattices for near-infrared detection.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 1, p. 1, doi. 10.1007/s00339-016-0629-z
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- Article
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 118, doi. 10.15407/spqeo20.01.118
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- Article
Semiconductors: Materials, Physics, and Devices.
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- 2016
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- Publication type:
- Editorial
Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 8, p. 783, doi. 10.1134/S106378501608006X
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- Article
The initial stage of autocatalytic growth of GaAs filamentary nanocrystals.
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- Technical Physics Letters, 2016, v. 42, n. 8, p. 818, doi. 10.1134/S1063785016080113
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- Article
Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 4, p. 689, doi. 10.1049/iet-pel.2015.0019
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- Article
Correlation Effect of Two Donors in a Nano Dot under the Influence of Magneticfield.
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- Journal of Nano- & Electronic Physics, 2016, v. 8, n. 2, p. 1, doi. 10.21272/jnep.8(2).02023
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- Article
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime.
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- Semiconductors, 2016, v. 50, n. 4, p. 466, doi. 10.1134/S1063782616040060
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- Article
A model of axial heterostructure formation in III-V semiconductor nanowires.
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- Technical Physics Letters, 2016, v. 42, n. 3, p. 332, doi. 10.1134/S1063785016030196
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- Publication type:
- Article
Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/263734
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- Article
Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.
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- Scientific Reports, 2015, p. 13494, doi. 10.1038/srep13494
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- Article
Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3076, doi. 10.1007/s11664-015-3822-5
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- Publication type:
- Article
Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.
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- Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054
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- Article
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.
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- Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285
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- Article
Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-23
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- Publication type:
- Article
0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1631, doi. 10.1049/el.2014.2774
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- Publication type:
- Article
Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves.
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- Semiconductors, 2014, v. 48, n. 2, p. 184, doi. 10.1134/S1063782614020067
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- Publication type:
- Article
Design of S-Graded Buffer Layers for Metamorphic ZnS<sub>y</sub>Se<sub>1−y</sub>/GaAs (001) Semiconductor Devices.
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- Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3408, doi. 10.1007/s11664-013-2771-0
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- Article
Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band.
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- Technical Physics, 2013, v. 58, n. 7, p. 1039, doi. 10.1134/S1063784213070256
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- Article
Optomechanics: Enhanced cavities.
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- Nature Photonics, 2013, v. 7, n. 3, p. 167, doi. 10.1038/nphoton.2013.59
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- Publication type:
- Article
Self-limited ionization in bandgap renormalized GaAs at high femtosecond laser intensities.
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- Optical Engineering, 2012, v. 51, n. 12, p. 1, doi. 10.1117/1.OE.51.12.121808
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- Article
E/D GaAs PHEMT Core Chips for Electronically Steerable Antennas.
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- Microwave Journal, 2012, v. 55, n. 11, p. 98
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- Publication type:
- Article
Small-signal field effect in GaAs/InAs quantum-dot heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1274, doi. 10.1134/S1063782612100144
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- Article
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.
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- Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
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- Publication type:
- Article
Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes.
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- Semiconductors, 2012, v. 46, n. 10, p. 1316, doi. 10.1134/S1063782612100077
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- Article
850-nm diode lasers based on AlGaAsP/GaAs heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1321, doi. 10.1134/S106378261210020X
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- Article
An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers.
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- Applied Physics A: Materials Science & Processing, 2012, v. 108, n. 3, p. 521, doi. 10.1007/s00339-012-6977-4
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- Publication type:
- Article