A model for calculating the composition of GaAsP solid solutions under metalorganic vapor phase epitaxy conditions.
- Published in:
- Inorganic Materials, 2017, v. 53, n. 4, p. 369, doi. 10.1134/S0020168517040124
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- Article
Works matching DE "GALLIUM arsenide phosphide"
Results: 7
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First-principles calculations for the structural and electronic properties of GaAsP nanowires.
- Published in:
- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2016, v. 27, n. 3, p. -1, doi. 10.1142/S0129183116500352
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- Article
3
Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm.
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- Semiconductors, 2014, v. 48, n. 1, p. 104, doi. 10.1134/S1063782614010059
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- Article
4
Characterization of Double-Junction GaAsP Two-Color LED Structure.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 12, p. 7129, doi. 10.1007/s11664-018-6643-5
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- Article
5
Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic GaAsP Ternary Alloys Under Hydrostatic Pressure.
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- Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4684, doi. 10.1007/s11664-015-4048-2
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- Article
6
Coherent oscillations of holes in GaAsP/AlGaAs surface quantum well.
- Published in:
- Pramana: Journal of Physics, 2014, v. 82, n. 2, p. 359, doi. 10.1007/s12043-014-0690-0
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- Article
7
Superluminescent Diode at 0.8‐µm with a GaAsP/AlGaAs Tensile‐Strained Quantum Well.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 18, p. 1, doi. 10.1002/pssa.201800176
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- Publication type:
- Article