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In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy Ion Implantation.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2061, doi. 10.1134/S1063782618160200
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- Article
Spin-filtering effect in GaAsN: electron-nuclear spin dynamics of Ga<sup>3+</sup> centers.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15307, doi. 10.1007/s10854-018-8803-z
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- Article
Formation energies of substitutional N<sub>As</sub> and split interstitial complexes in dilute GaAsN alloys with different growth orientations.
- Published in:
- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1536-7
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- Article
Multicolor Electroluminescence from Intermediate Band Solar Cell Structures.
- Published in:
- Advanced Energy Materials, 2016, v. 6, n. 5, p. n/a, doi. 10.1002/aenm.201501820
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- Article
Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices.
- Published in:
- Advances in Condensed Matter Physics, 2013, p. 1, doi. 10.1155/2013/597265
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- Article