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Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
- Published in:
- Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
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- Article
The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5
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- Article
Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination.
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- Crystal Research & Technology, 2016, v. 51, n. 12, p. 723, doi. 10.1002/crat.201600149
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- Article
Memory characteristics of capacitors with poly-GaAs floating gates.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 11, p. 963, doi. 10.1049/el.2015.3823
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- Article
Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1327, doi. 10.1007/s11664-015-3625-8
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- Article
Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures.
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- Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 873, doi. 10.1007/s11082-014-0019-8
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- Article