Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800772
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- Publication type:
- Article
Works matching DE "GALLIUM arsenide devices"
Results: 15
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2
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136
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- Publication type:
- Article
3
Indigenous development of 320 x 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imaging.
- Published in:
- Current Science (00113891), 2017, v. 112, n. 7, p. 1568, doi. 10.18520/cs/v112/i07/1568-1573
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- Publication type:
- Article
4
340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applications.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1180, doi. 10.1049/el.2018.5856
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- Publication type:
- Article
5
Fabrication of 45 nm high In component metamorphic In<sub>0.7</sub>Ga<sub>0.3</sub>As/In<sub>0.6</sub>Ga<sub>0.4</sub>As composite-channel high electron-mobility transistors on GaAs substrates.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 4, p. 318, doi. 10.1049/el.2015.2126
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- Publication type:
- Article
6
INFLUENCE OF THE QUANTUM DOT MATERIAL DEFORMATION ON TAMM SURFACE LEVELS.
- Published in:
- Sensor Electronics & Microsystems Technologies / Sensorna Elektronika i Microsystemni Tekhnologii, 2020, v. 17, n. 3, p. 4, doi. 10.18524/1815-7459.2020.3.205924
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- Publication type:
- Article
7
Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.
- Published in:
- Science & Technology of Advanced Materials, 2012, v. 13, n. 1, p. 1, doi. 10.1088/1468-6996/13/1/013002
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- Publication type:
- Article
8
Simultaneous effects of pressure and temperature on excitons in Pöschl-Teller quantum well.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500503
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- Publication type:
- Article
9
Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-65805-4
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- Publication type:
- Article
10
DISTINGUISHING CAP AND CORE CONTRIBUTIONS TO THE PHOTOCONDUCTIVE TERAHERTZ RESPONSE OF SINGLE GaAs BASED CORE-SHELL-CAP NANOWIRE DETECTORS.
- Published in:
- Lithuanian Journal of Physics, 2018, v. 58, n. 1, p. 15, doi. 10.3952/physics.v58i1.3648
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- Publication type:
- Article
11
Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation.
- Published in:
- Journal of Communications Technology & Electronics, 2015, v. 60, n. 6, p. 517, doi. 10.1134/S1064226915060200
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- Publication type:
- Article
12
Commercial Market.
- Published in:
- Microwave Journal, 2015, v. 58, n. 12, p. 51
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- Publication type:
- Article
13
Low Noise GaN Amplifiers with Inherent Overdrive Protection.
- Published in:
- Microwave Journal, 2015, v. 58, n. 5, p. 78
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- Publication type:
- Article
14
Material conversion of GaAs nanowires.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600522
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- Publication type:
- Article
15
Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 11, p. 3014, doi. 10.1002/pssa.201600204
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- Publication type:
- Article