Works about GALLIUM arsenide

Results: 2480

Enhanced Extraction Efficiency of Erbium Luminescence in Erbium Oxygen Codoped Gallium Arsenide Using One-Dimensional Photonic Crystals.

Published in:

Materials Transactions, 2025, v. 66, n. 6, p. 659, doi. 10.2320/matertrans.MT-M2024180

By:

Zhidong Fang;
Hirotake Kajii;
Masahiko Kondow;
Yasufumi Fujiwara;
Jun Tatebayashi

Publication type:

Article

Optical and Surface Structure Modification of Gallium Arsenide.

Published in:

International Journal of Nanoscience, 2024, v. 23, n. 2, p. 1, doi. 10.1142/S0219581X23500680

By:

Yadav, A. R.;
Dubey, S. K.;
Karande, A.;
Dubey, R. L.;
Sulania, I.

Publication type:

Article

Raman and RBS Analysis of Silicon Ion Implanted Gallium Arsenide.

Published in:

International Journal of Nanoscience, 2022, v. 21, n. 1, p. 1, doi. 10.1142/S0219581X22500028

By:

Yadav, A. R.;
Dubey, S. K.;
Sulania, I.

Publication type:

Article

Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions.

Published in:

International Journal of Nanoscience, 2020, v. 19, n. 3, p. N.PAG, doi. 10.1142/S0219581X19500194

By:

Yadav, A. R.;
Dubey, S. K.;
Dubey, R. L.;
Subramanyam, N.;
Sulania, I.

Publication type:

Article

ELECTRONEGATIVITY EFFECTS ON THE BANDGAP BOWING CHARACTERS IN COMPOUND-SEMICONDUCTOR TERNARY ALLOYS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 6, p. 609, doi. 10.1142/S0219581X10007356

By:

TIT, NACIR;
AMRANE, NOUREDDINE;
RESHAK, ALI HUSSAIN

Publication type:

Article

PATTERNED GROWTH OF Si NANOWIRES:: A COMPARATIVE STUDY OF VLS AND SLS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 3, p. 145, doi. 10.1142/S0219581X10006727

By:

ZIA, M. F.;
ALI, J.;
NAWEED, A.;
BHATTI, A. S.;
NASEEM, S.

Publication type:

Article

POSITION DEPENDENT EFFECTIVE MASSES FOR DONOR BINDING ENERGIES IN QUANTUM CONFINED SYSTEMS IN AN ELECTRIC FIELD.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 1/2, p. 83, doi. 10.1142/S0219581X10006545

By:

RAJASHABALA, S.;
RAMAN, KANNAN

Publication type:

Article

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 721, doi. 10.1142/S0219581X06005054

By:

YUXIN ZENG;
WEI LIU;
FUHUA YANG;
PING XU;
PINGHENG TAN;
HOUZHI ZHENG;
YIPING ZENG;
YINGJIE XING;
DAPENG YU

Publication type:

Article

TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 847, doi. 10.1142/S0219581X0600525X

By:

ZHIDAN FANG;
ZHENG GONG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 883, doi. 10.1142/S0219581X06005315

By:

ZHENG GONG;
ZHIDAN FANG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

DIRECTIONAL DIFFUSION OF K ATOMS ON A GaAs(110) SURFACE.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 895, doi. 10.1142/S0219581X06005339

By:

ISHIDA, NOBUYUKI;
SUBAGYO, AGUS;
SUEOKA, KAZUHISA

Publication type:

Article

THERMAL CHARACTERIZATION OF GaAsN THIN FILMS BY PULSED PHOTOTHERMAL REFLECTANCE TECHNIQUE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 781, doi. 10.1142/S0219581X0400267X

By:

Zhao, Yimin;
Chen, George;
Wang, Shanzhong;
Yoon, Soon Fatt

Publication type:

Article

ARE AHARONOV–BOHM EFFECT AND QUANTIZED HALL REGIME COMPATIBLE?

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 6, p. 535, doi. 10.1142/S0219581X03001656

By:

Chenaud, B.;
Chaubet, C.;
Jouault, B.;
Saminadayar, L.;
Mailly, D.;
Faini, G.;
Cavanna, A.

Publication type:

Article

RELAXATION OSCILLATIONS AND DYNAMICAL PROPERTIES OF A BISTABLE QUANTUM HALL SYSTEM.

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 6, p. 559, doi. 10.1142/S0219581X0300167X

By:

Kalugin, N.G.;
Sa&gcaron;ol, B.E.;
Stellmach, C.;
Buß, A.;
Hirsch, A.;
Nachtwei, G.;
Hein, G.

Publication type:

Article

PECULIARITIES OF ELECTRON TRANSPORT IN THE COUPLED AlGaAs/GaAs QUANTUM WELLS WITH THIN CENTRAL AlAs BARRIER.

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 6, p. 565, doi. 10.1142/S0219581X03001681

By:

Kulbachinskii, V.A.;
Lunin, R.A.;
Vasil'Evskii, I.S.;
Galiev, G.B.;
Mokerov, V.G.;
Kaminskii, V.E.

Publication type:

Article

Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix.

Published in:

Annalen der Physik, 2019, v. 531, n. 6, p. N.PAG, doi. 10.1002/andp.201800388

By:

Pozina, Galia;
Girshova, Elizaveta I.;
Morozov, Konstantin M.;
Ivanov, Konstantin A.;
Egorov, Anton Yu.;
Kaliteevski, Mikhail A.

Publication type:

Article

A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 17, p. 2836, doi. 10.1002/adfm.201504853

By:

Orrù, Marta;
Repiso, Eva;
Carapezzi, Stefania;
Henning, Alex;
Roddaro, Stefano;
Franciosi, Alfonso;
Rosenwaks, Yossi;
Cavallini, Anna;
Martelli, Faustino;
Rubini, Silvia

Publication type:

Article

Antimony Induced {112}A Faceted Triangular GaAs<sub>1− x</sub>Sb <sub>x</sub>/InP Core/Shell Nanowires and Their Enhanced Optical Quality.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 33, p. 5300, doi. 10.1002/adfm.201501467

By:

Yuan, Xiaoming;
Caroff, Philippe;
Wang, Fan;
Guo, Yanan;
Wang, Yuda;
Jackson, Howard E.;
Smith, Leigh M.;
Tan, Hark Hoe;
Jagadish, Chennupati

Publication type:

Article

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 42, p. 6629, doi. 10.1002/adfm.201400960

By:

Alaskar, Yazeed;
Arafin, Shamsul;
Wickramaratne, Darshana;
Zurbuchen, Mark A.;
He, Liang;
McKay, Jeff;
Lin, Qiyin;
Goorsky, Mark S.;
Lake, Roger K.;
Wang, Kang L.

Publication type:

Article

Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 10, p. 1024, doi. 10.1007/s10854-010-0104-0

By:

Kang Min Kim;
Krishnamurthy, Daivasigamani;
Yuji Sakai;
Jong-Uk Seo;
Hasegawa, Shigehiko;
Asahi, Hajime

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6

By:

Usui, Hiroyuki;
Yasuda, Hidehiro;
Mori, Hirotaro

Publication type:

Article

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5

By:

Reentilä, O.;
Lankinen, A.;
Mattila, M.;
Säynätjoki, A.;
Tuomi, T. O.;
Lipsanen, H.;
O'Reilly, L.;
McNally, P. J.

Publication type:

Article

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 149, doi. 10.1007/s10854-007-9303-8

By:

Säynätjoki, A.;
Lankinen, A.;
Tuomi, T. O.;
McNally, P. J.;
Danilewsky, A.;
Zhilyaev, Y.;
Fedorov, L.

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

Growth of triangular shaped InGaAs/GaAs quantum wire structures.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 6, p. 467, doi. 10.1023/A:1022976131428

By:

Kim, Seong-Il;
Han, Il-Ki;
Chung, Sang Wook;
Jagadish, C.

Publication type:

Article

Correlative Characterization of Defect Clusters in GaAs Solar Cells by High-Resolution TEM and Spatially Resolved Optical Techniques.

Published in:

Microscopy & Microanalysis, 2019, p. 136, doi. 10.1017/S1431927618001174

By:

McKeon, B.S.;
Chen, Q.;
Zhang, S.;
Hu, C.-K.;
Gfroerer, T.H.;
Wanlass, M.W.;
Zhang, Y.;
Smith, David J.

Publication type:

Article

The effect of gallium arsenide aluminum laser therapy in the management of cervical myofascial pain syndrome: a double blind, placebo-controlled study.

Published in:

Clinical Rheumatology, 2007, v. 26, n. 6, p. 930, doi. 10.1007/s10067-006-0438-4

By:

Dundar, U.;
Evcik, D.;
Samli, F.;
Pusak, H.;
Kavuncu, V.

Publication type:

Article

A Coplanar Waveguide with a Gallium Arsenide Substrate for an Electro-Optic Sampling System with a Bandwidth Over 110 GHz.

Published in:

Measurement Techniques, 2022, v. 65, n. 1, p. 70, doi. 10.1007/s11018-022-02050-3

By:

Zenchenko, M. A.;
Kleopin, A. V.;
Makarov, V. V.;
Selin, L. N.

Publication type:

Article

The Quantum Hall Effect and Von Klitzing Constant.

Published in:

Measurement Techniques, 2021, v. 64, n. 1, p. 8, doi. 10.1007/s11018-021-01888-3

By:

Semenchinskiy, S. G.

Publication type:

Article

Effects of Gallium Arsenide Laser on Pain and Grip Strength in Patients With Tennis Elbow.

Published in:

Journal of Modern Rehabilitation, 2017, v. 11, n. 1, p. 45, doi. 10.18869/nirp.jmr.11.1.45

By:

Olyaei, Gholamreza;
Tajali, Siamak Bashardoust;
Mansouri, Behrouz Ataye;
Shafipoor, Reza

Publication type:

Article

A Theoretical Terahertz Metamaterial Absorber Structure with a High Quality Factor Using Two Circular Ring Resonators for Biomedical Sensing.

Published in:

Inventions (2411-5134), 2021, v. 6, n. 4, p. 78, doi. 10.3390/inventions6040078

By:

Banerjee, Sagnik;
Nath, Uddipan;
Dutta, Purba;
Jha, Amitkumar Vidyakant;
Appasani, Bhargav;
Bizon, Nicu

Publication type:

Article

A 2D GaAs-Based Photonic Crystal Biosensor for Malaria Detection.

Published in:

International Journal of Engineering & Technology Innovation, 2023, v. 13, n. 4, p. 328, doi. 10.46604/ijeti.2023.11660

By:

N., Manjunatha;
Raga, Sarika;
Gowre, Sanjay Kumar;
Miyan, Hameed

Publication type:

Article

Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS.

Published in:

Journal of Environmental Science & Health. Part A. Toxic/Hazardous Substances & Environmental Engineering, 2010, v. 45, n. 4, p. 471, doi. 10.1080/10934520903540133

By:

Torrance, Keith W.;
Keenan, Helen E.;
Hursthouse, Andrew S.;
Stirling, David

Publication type:

Article

Arsenic Removal Using a Biopolymer Chitosan Sorbent.

Published in:

Journal of Environmental Science & Health. Part A. Toxic/Hazardous Substances & Environmental Engineering, 2006, v. 41, n. 4, p. 645, doi. 10.1080/10934520600575044

By:

Chiing-Chang Chen;
Ying-Chien Chung

Publication type:

Article

Optically induced nuclear spin–spin couplings in GaAs manifested by spin echo decays under optical pumping.

Published in:

NPJ Quantum Information, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41534-022-00571-x

By:

Goto, Atsushi;
Hashi, Kenjiro;
Ohki, Shinobu;
Shimizu, Tadashi

Publication type:

Article

Design of millimeter-wave reflective attenuators with capacitive compensation technique.

Published in:

Journal of Southeast University (English Edition), 2023, v. 39, n. 2, p. 153, doi. 10.3969/j.issn.1003-7985.2023.02.006

By:

Pu Yuqian;
Shen Hongchang;
Tang Feihong;
Hao Zhangwei;
Zhang Youming;
Huang Fengyi

Publication type:

Article

Measuring the 13 C/ 12 C isotope ratio in atmospheric CO 2 by means of laser absorption spectrometry: a new perspective based on a 2.05-μm diode laser.

Published in:

Isotopes in Environmental & Health Studies, 2006, v. 42, n. 1, p. 47, doi. 10.1080/10256010500503361

By:

Castrillo, Antonio;
Casa, Giovanni;
Palmieri, Antonio;
Gianfrani, Livio

Publication type:

Article

Magnitude and Sign of a Piezoelectric Coefficient Determined by the Interferometric Technique.

Published in:

Ferroelectrics, 2002, v. 271, n. 1, p. 397, doi. 10.1080/00150190211524

By:

Muensit, Supasarote;
Guy, I.L.

Publication type:

Article

MASS TRANSFER EFFECTS ON THE ETCH RATE OF GaAs IN FLOW SYSTEMS.

Published in:

Chemical Engineering Communications, 2004, v. 191, n. 2, p. 189, doi. 10.1080/00986440490261845

By:

BRYCE, CHRISTINE;
BERK, DIMITRIOS

Publication type:

Article

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures.

Published in:

Plasma Physics Reports, 2018, v. 44, n. 4, p. 438, doi. 10.1134/S1063780X18040037

By:

Dunaev, A. V.;
Murin, D. B.

Publication type:

Article

Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2300, doi. 10.3390/electronics14112300

By:

Jeon, Hyeongjin;
Shin, Jaekyung;
Choi, Woojin;
Bae, Sooncheol;
Bae, Kyungdong;
Bin, Soohyun;
Kim, Sangyeop;
Ju, Yunhyung;
Ahn, Minseok;
Mun, Gyuhyeon;
Hwang, Keum Cheol;
Lee, Kang-Yoon;
Yang, Youngoo

Publication type:

Article

Performance Evaluation of GaAs and InGaAs Schottky Mixers at 0.3 THz: A Comparative Analysis Between Optical and Electrical Pumping in THz Wireless Communication Systems.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1957, doi. 10.3390/electronics14101957

By:

Martinez-Gil, Javier;
Belio-Apaolaza, Iñigo;
Tebart, Jonas;
Fernández Estévez, Jose Luis;
Moro-Melgar, Diego;
Renaud, Cyril C.;
Stöhr, Andreas;
Cojocari, Oleg

Publication type:

Article

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part II: Approaches Based on Intersection Points.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 9, p. 1743, doi. 10.3390/electronics14091743

By:

d'Alessandro, Vincenzo;
Catalano, Antonio Pio;
Scognamillo, Ciro

Publication type:

Article

A 6–18 GHz Low-Noise Amplifier with 19 dBm OP 1dB and 2.6 ± 0.3 dB NF in 0.15 μm GaAs Process.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 8, p. 1600, doi. 10.3390/electronics14081600

By:

Wang, Xiyang;
Men, Tao;
Cheng, Buwen

Publication type:

Article

A 13–33 GHz Wideband Low-Noise Amplifier in 150-nm GaAs Based on Simultaneous Noise- and Input-Matched Gain-Core with R-L-C Shunt Feedback Network.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 3, p. 450, doi. 10.3390/electronics14030450

By:

Hwang, Seonyeong;
Kang, Dongwan;
Lee, Yeonggeon;
Park, Dae-Woong

Publication type:

Article

Time Domain Simulated Characterization of the Coplanar Waveguide in an On-Chip System for Millimeter Waveform Metrology.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 1, p. 145, doi. 10.3390/electronics13010145

By:

Zhao, Kejia;
Chen, He;
Li, Xiangjun;
Sun, Jie;
Li, Bo;
Yan, Dexian;
Li, Lanlan

Publication type:

Article

Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 21, p. 4518, doi. 10.3390/electronics12214518

By:

Martinez Gil, Javier;
Moro-Melgar, Diego;
Negrus, Artur;
Oprea, Ion;
Cojocari, Oleg

Publication type:

Article

Quantum and Optoelectronic Devices, Circuits and Systems.

Published in:

2023

By:

Lamata, Lucas

Publication type:

Editorial