Works matching DE "GALLIUM arsenide"

Results: 2472

Anisotropic Material Removal Mechanisms and Chemical Mechanical Polishing Performance of Gallium Arsenide Single Crystal Wafers.

Published in:

Crystal Research & Technology, 2025, v. 60, n. 6, p. 1, doi. 10.1002/crat.202400262

By:

Cao, Jianguo;
Yang, Jiashun

Publication type:

Article

Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2300, doi. 10.3390/electronics14112300

By:

Jeon, Hyeongjin;
Shin, Jaekyung;
Choi, Woojin;
Bae, Sooncheol;
Bae, Kyungdong;
Bin, Soohyun;
Kim, Sangyeop;
Ju, Yunhyung;
Ahn, Minseok;
Mun, Gyuhyeon;
Hwang, Keum Cheol;
Lee, Kang-Yoon;
Yang, Youngoo

Publication type:

Article

Transparency Current and Gain Spectrum of InGaAs/GaAs Quantum Well-Dots.

Published in:

Journal of Applied Spectroscopy, 2025, v. 92, n. 2, p. 271, doi. 10.1007/s10812-025-01907-z

By:

Kornyshov, G. O.;
Payusov, A. S.;
Kharchenko, A. A.;
Beckman, A. A.;
Shernyakov, Yu. M.;
Mintairov, S. A.;
Kalyuzhny, N. A.;
Maksimov, M. V.;
Gordeev, N. Yu.

Publication type:

Article

Performance Evaluation of GaAs and InGaAs Schottky Mixers at 0.3 THz: A Comparative Analysis Between Optical and Electrical Pumping in THz Wireless Communication Systems.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1957, doi. 10.3390/electronics14101957

By:

Martinez-Gil, Javier;
Belio-Apaolaza, Iñigo;
Tebart, Jonas;
Fernández Estévez, Jose Luis;
Moro-Melgar, Diego;
Renaud, Cyril C.;
Stöhr, Andreas;
Cojocari, Oleg

Publication type:

Article

Chemistry and treatment of III-V semiconductor wastewater.

Published in:

Solid State Technology, 2001, v. 44, n. 8, p. 79

By:

Golden, Josh H.;
Olds, Andrew;
Hannan, William

Publication type:

Article

European solar-cell efficiency record.

Published in:

Solid State Technology, 1999, v. 42, n. 10, p. 32

By:

Burggraaf, Pete

Publication type:

Article

Gd oxide may bring better GaAs, more talk.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 28

By:

Burggraaf, Pieter

Publication type:

Article

Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 4123, doi. 10.1007/s11664-025-11841-7

By:

Mezhoud, Leila;
Sengouga, Nouredine;
Meftah, Amjad;
Al Saqri, Noor Alhuda;
Henini, Mohamed

Publication type:

Article

Fabrication of ordered ripple patterns on GaAs(100) surface using 60 keV Ar<sup>+</sup> beam irradiation.

Published in:

Surface Engineering, 2013, v. 29, n. 7, p. 543, doi. 10.1179/1743294413Y.0000000146

By:

Kumar, T;
Kumar, M;
Verma, S;
Kanjilal, D

Publication type:

Article

Influence of GaAs substrate misorientation on the characteristics in undulating compositional step-graded AlGaInAs buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 8, p. 7203, doi. 10.1007/s10854-019-00871-7

By:

He, Yang;
Yan, Wei;
Dai, Pan;
Yu, Jian;
Dong, Jianrong

Publication type:

Article

Surface effect of n-GaAs cap on the THz emission in LT-GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12436, doi. 10.1007/s10854-018-9360-1

By:

Balgos, Maria Herminia;
Jaculbia, Rafael;
Prieto, Elizabeth Ann;
Mag-usara, Valynn Katrine;
Tani, Masahiko;
Salvador, Arnel;
Estacio, Elmer;
Somintac, Armando

Publication type:

Article

Fabrication and characterization of n-ZnO/p-GaAs structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7750, doi. 10.1007/s10854-018-8771-3

By:

Turgut, G.;
Kaya, F. S.;
Duman, S.

Publication type:

Article

Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17778, doi. 10.1007/s10854-017-7717-5

By:

Vega-Macotela, L.;
Torchynska, T.;
Polupan, G.

Publication type:

Article

Structural and optical properties of electrochemically etched p-type GaAs surfaces: influence of HF presence in the etching electrolyte.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 22, p. 16818, doi. 10.1007/s10854-017-7597-8

By:

Naddaf, M.

Publication type:

Article

Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9732, doi. 10.1007/s10854-017-6724-x

By:

He, Yang;
Sun, Yurun;
Zhao, Yongming;
Yu, Shuzhen;
Dong, Jianrong

Publication type:

Article

Comparison of GaAs photocathode grown by MOCVD and MBE: a first-principle and experimental research.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7429, doi. 10.1007/s10854-017-6432-6

By:

Xu, Yuan;
Chang, Benkang;
Chen, Liang;
Chen, Xinlong;
Qian, Yunsheng

Publication type:

Article

Emission and elastic strain study in GaAs/InGaAs/InGaAs/GaAs quantum wells with embedded InAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7126, doi. 10.1007/s10854-017-6536-z

By:

Vega-Macotela, L.;
Torchynska, T.;
Polupan, G.

Publication type:

Article

Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce-doped SnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 7, p. 5415, doi. 10.1007/s10854-016-6202-x

By:

Machado, Diego;
Scalvi, Luis;
Tabata, Américo;
Silva, José

Publication type:

Article

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 845, doi. 10.1007/s10854-016-5599-6

By:

Chang, Edward;
Hsiao, Chih-Jen;
Chang, Sheng-Po;
Chang, Shoou-Jinn;
Ha, Minh-Thien-Huu;
Nguyen, Hong-Quan;
Yu, Hung-Wei;
Wong, Yuen-Yee;
Liu, Chun-Kuan;
Maa, Jer-Shen

Publication type:

Article

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2210, doi. 10.1007/s10854-015-2670-7

By:

Pat, Suat;
Korkmaz, Şadan;
Özen, Soner;
Şenay, Volkan

Publication type:

Article

Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 134, doi. 10.1007/s10854-013-1562-y

By:

Galiana, B.;
Silvestre, S.;
Algora, C.;
Rey-Stolle, I.

Publication type:

Article

On the formation of voids, etched holes, and GaO particles configuration during the nanowires growth by VLS method on GaAs substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 7, p. 2513, doi. 10.1007/s10854-013-1126-1

By:

Dao, Khac;
Nguyen, Tien;
Phan, Anh;
Do, Hung

Publication type:

Article

On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1624, doi. 10.1007/s10854-012-0986-0

By:

Hadi, Walid;
Shur, Michael;
O'Leary, Stephen

Publication type:

Article

Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 2, p. 807, doi. 10.1007/s10854-012-0818-2

By:

Hadi, Walid;
Cheekoori, Reddiprasad;
Shur, Michael;
O'Leary, Stephen

Publication type:

Article

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1799, doi. 10.1007/s10854-012-0665-1

By:

Riordan, Nathaniel;
Gogineni, Chaturvedi;
Johnson, Shane;
Lu, Xianfeng;
Tiedje, Tom;
Ding, Ding;
Zhang, Yong-Hang;
Fritz, Rafael;
Kolata, Kolja;
Chatterjee, Sangam;
Volz, Kerstin;
Koch, Stephan

Publication type:

Article

Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 10, p. 1024, doi. 10.1007/s10854-010-0104-0

By:

Kang Min Kim;
Krishnamurthy, Daivasigamani;
Yuji Sakai;
Jong-Uk Seo;
Hasegawa, Shigehiko;
Asahi, Hajime

Publication type:

Article

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1156, doi. 10.1007/s10854-007-9504-1

By:

Bergaoui, M. S.;
Boufaden, T.;
Guermazi, S.;
Agnel, S.;
Toureille, A.;
El Jani, B.

Publication type:

Article

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5

By:

Reentilä, O.;
Lankinen, A.;
Mattila, M.;
Säynätjoki, A.;
Tuomi, T. O.;
Lipsanen, H.;
O'Reilly, L.;
McNally, P. J.

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 149, doi. 10.1007/s10854-007-9303-8

By:

Säynätjoki, A.;
Lankinen, A.;
Tuomi, T. O.;
McNally, P. J.;
Danilewsky, A.;
Zhilyaev, Y.;
Fedorov, L.

Publication type:

Article

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6

By:

Usui, Hiroyuki;
Yasuda, Hidehiro;
Mori, Hirotaro

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

Growth of triangular shaped InGaAs/GaAs quantum wire structures.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 6, p. 467, doi. 10.1023/A:1022976131428

By:

Kim, Seong-Il;
Han, Il-Ki;
Chung, Sang Wook;
Jagadish, C.

Publication type:

Article

Focusing effect of bent GaAs crystals for γ-ray Laue lenses: Monte Carlo and experimental results.

Published in:

Experimental Astronomy, 2016, v. 41, n. 1/2, p. 307, doi. 10.1007/s10686-015-9490-x

By:

Virgilli, E.;
Frontera, F.;
Rosati, P.;
Bonnini, E.;
Buffagni, E.;
Ferrari, C.;
Stephen, J.;
Caroli, E.;
Auricchio, N.;
Basili, A.;
Silvestri, S.

Publication type:

Article

A Coplanar Waveguide with a Gallium Arsenide Substrate for an Electro-Optic Sampling System with a Bandwidth Over 110 GHz.

Published in:

Measurement Techniques, 2022, v. 65, n. 1, p. 70, doi. 10.1007/s11018-022-02050-3

By:

Zenchenko, M. A.;
Kleopin, A. V.;
Makarov, V. V.;
Selin, L. N.

Publication type:

Article

The Quantum Hall Effect and Von Klitzing Constant.

Published in:

Measurement Techniques, 2021, v. 64, n. 1, p. 8, doi. 10.1007/s11018-021-01888-3

By:

Semenchinskiy, S. G.

Publication type:

Article

Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide.

Published in:

Inorganic Materials, 2018, v. 54, n. 11, p. 1099, doi. 10.1134/S0020168518110146

By:

Tomashpolsky, Yu. Ya.;
Matyuk, V. M.;
Sadovskaya, N. V.

Publication type:

Article

Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni.

Published in:

Inorganic Materials, 2017, v. 53, n. 11, p. 1131, doi. 10.1134/S0020168517110176

By:

Yarzhemsky, V.;
Murashov, S.;
Izotov, A.

Publication type:

Article

Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes.

Published in:

Inorganic Materials, 2017, v. 53, n. 11, p. 1170, doi. 10.1134/S0020168517110164

By:

Vasil'ev, M.;
Vasil'ev, A.;
Kostin, Yu.;
Shelyakin, A.;
Izotov, A.

Publication type:

Article

Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH)CrO-HBr solutions.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 781, doi. 10.1134/S0020168517080106

By:

Levchenko, I.;
Stratiychuk, I.;
Tomashyk, V.;
Malanych, G.;
Stanetskaya, A.

Publication type:

Article

Chemically stimulated synthesis of gas-sensing films on the surface of GaAs.

Published in:

Inorganic Materials, 2017, v. 53, n. 5, p. 451, doi. 10.1134/S0020168517050132

By:

Kostryukov, V.;
Mittova, I.;
Dimitrenko, A.

Publication type:

Article

Physicochemical principles behind the preparation of high-purity arsenic compounds from lewisite detoxification products.

Published in:

Inorganic Materials, 2017, v. 53, n. 4, p. 397, doi. 10.1134/S0020168517040173

By:

Turygin, V.;
Smirnov, M.;
Berezkin, M.;
Sokhadze, L.;
Stepnova, N.;
Tomilov, A.;
Fedorov, V.;
Potolokov, N.

Publication type:

Article

Initial stages of gallium arsenide metalorganic vapor phase epitaxy.

Published in:

Inorganic Materials, 2016, v. 52, n. 10, p. 985, doi. 10.1134/S0020168516100046

By:

Boldyrevskii, P.;
Filatov, D.;
Kazantseva, I.;
Smotrin, D.;
Revin, M.

Publication type:

Article

Influence of the state of interfaces on the magnitude of the magnetoelectric effect in Co (Ni) films on PbZrTiO and GaAs substrates.

Published in:

Inorganic Materials, 2016, v. 52, n. 10, p. 1070, doi. 10.1134/S0020168516100162

By:

Stognij, A.;
Novitskii, N.;
Ketsko, V.;
Sharko, S.;
Poddubnaya, N.;
Laletin, V.;
Bespalov, A.;
Golikova, O.;
Smirnova, M.;
Fetisov, L.;
Titova, A.

Publication type:

Article

Ammonia response of thin films grown on GaAs using PbO + BiO mixtures.

Published in:

Inorganic Materials, 2015, v. 51, n. 5, p. 425, doi. 10.1134/S0020168515040056

By:

Kostryukov, V.;
Mittova, I.

Publication type:

Article

Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization.

Published in:

Inorganic Materials, 2015, v. 51, n. 3, p. 197, doi. 10.1134/S0020168515020144

By:

Pashchenko, A.;
Chebotarev, S.;
Lunin, L.

Publication type:

Article

Influence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 874, doi. 10.1134/S0020168514090088

By:

Mittova, I.

Publication type:

Article

Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 882, doi. 10.1134/S0020168514090052

By:

Kostryukov, V.;
Mittova, I.;
Shvets, V.;
Tomina, E.;
Sladkopevtsev, B.;
Tret'yakov, N.

Publication type:

Article

Phase formation on GaAs during heterosegregation in a gaseous atmosphere.

Published in:

Inorganic Materials, 2014, v. 50, n. 8, p. 757, doi. 10.1134/S0020168514080160

By:

Tomashpolsky, Yu.;
Matyuk, V.;
Sadovskaya, N.

Publication type:

Article

Growth of GaInAsP/GaAs quantum dot arrays by ion beam deposition.

Published in:

Inorganic Materials, 2014, v. 50, n. 3, p. 215, doi. 10.1134/S0020168514020174

By:

Sysoev, I.;
Lunina, M.;
Alfimova, D.;
Blagin, A.;
Gusev, D.;
Seredin, B.

Publication type:

Article