Found: 2347
Select item for more details and to access through your institution.
An Advanced Hall Element Array-Based Device for High-Resolution Magnetic Field Mapping.
- Published in:
- Sensors (14248220), 2024, v. 24, n. 12, p. 3773, doi. 10.3390/s24123773
- By:
- Publication type:
- Article
Molecular dynamics simulation of the scratching process of GaAs with different crystal orientations.
- Published in:
- Journal of Molecular Modeling, 2024, v. 30, n. 6, p. 1, doi. 10.1007/s00894-024-05981-6
- By:
- Publication type:
- Article
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 909, doi. 10.3390/nano14110909
- By:
- Publication type:
- Article
Enhanced Photoelectric Responsivity of Graphene/GaAs Photodetector Using Surface Plasmon Resonance Based on Ellipse Wall Grating-Nanowire Structure.
- Published in:
- Plasmonics, 2024, v. 19, n. 3, p. 1201, doi. 10.1007/s11468-023-02066-7
- By:
- Publication type:
- Article
GaAs-Hochfrequenzverstärker richtig betreiben.
- Published in:
- Elektronik Industrie, 2024, p. 18
- Publication type:
- Article
GaAs-Hochfrequenzverstärker richtig betreiben.
- Published in:
- Elektronik Industrie, 2024, p. 18
- Publication type:
- Article
Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region.
- Published in:
- Nanophotonics (21928606), 2024, v. 13, n. 13, p. 2379, doi. 10.1515/nanoph-2023-0948
- By:
- Publication type:
- Article
Study of the Photo-Response of Doped GaAs with Aging.
- Published in:
- Applied Sciences (2076-3417), 2024, v. 14, n. 9, p. 3806, doi. 10.3390/app14093806
- By:
- Publication type:
- Article
An S–K Band 6-Bit Digital Step Attenuator with Ultra Low Insertion Loss and RMS Amplitude Error in 0.25 μm GaAs p-HEMT Technology.
- Published in:
- Applied Sciences (2076-3417), 2024, v. 14, n. 9, p. 3887, doi. 10.3390/app14093887
- By:
- Publication type:
- Article
Comparative Study of Polarization‐Dependent Conversion Efficiency of GaAs and Si Solar Cells at Oblique Incident Angles Using Surface DLAR Coating of MgF<sub>2</sub>/ZnSe.
- Published in:
- Crystal Research & Technology, 2024, v. 59, n. 5, p. 1, doi. 10.1002/crat.202300035
- By:
- Publication type:
- Article
Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs) 4 (GaAs) 3 /Be-Doped InAlAs Quantum Wells for THz Applications.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 5, p. 421, doi. 10.3390/cryst14050421
- By:
- Publication type:
- Article
Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 9, p. 1, doi. 10.1049/ell2.13166
- By:
- Publication type:
- Article
Time-Resolved Detection of Terahertz Response in Photodynamically Induced Plasmonic Metasurfaces.
- Published in:
- JETP Letters, 2024, v. 119, n. 9, p. 665, doi. 10.1134/S0021364024601052
- By:
- Publication type:
- Article
High-Efficiency and Large-Angle Homo-Metagratings for the Near-Infrared Region.
- Published in:
- Photonics, 2024, v. 11, n. 5, p. 392, doi. 10.3390/photonics11050392
- By:
- Publication type:
- Article
Why Is the Bandgap of GaP Indirect While That of GaAs and GaN Are Direct?
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 5, p. 1, doi. 10.1002/pssr.202300489
- By:
- Publication type:
- Article
Wafer Level 3D-Stacked Integration Technology with Coplanar Hot Via MMIC for mm-Wave Low-Profile Applications.
- Published in:
- Progress in Electromagnetics Research Letters, 2024, v. 117, p. 27, doi. 10.2528/PIERL23113002
- By:
- Publication type:
- Article
Continuous-wave GaAs/AlGaAs quantum cascade laser at 5.7 THz.
- Published in:
- Nanophotonics (21928606), 2024, v. 13, n. 10, p. 1735, doi. 10.1515/nanoph-2023-0726
- By:
- Publication type:
- Article
STUDY ON PHASE CHARACTERISTICS OF HETEROSTRUCTURE por-Ga<sub>2</sub>O<sub>3</sub>/GaAs.
- Published in:
- Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2024, v. 15, n. 2, p. 212, doi. 10.15407/hftp15.02.212
- By:
- Publication type:
- Article
A compact 60‐GHz on‐chip bandpass filter in GaAs technology.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 7, p. 1, doi. 10.1049/ell2.13160
- By:
- Publication type:
- Article
Optical and Surface Structure Modification of Gallium Arsenide.
- Published in:
- International Journal of Nanoscience, 2024, v. 23, n. 2, p. 1, doi. 10.1142/S0219581X23500680
- By:
- Publication type:
- Article
Optical Response of Aged Doped and Undoped GaAs Samples.
- Published in:
- Micromachines, 2024, v. 15, n. 4, p. 498, doi. 10.3390/mi15040498
- By:
- Publication type:
- Article
Investigation of n-ZnO/p-porous GaAs/p<sup>++</sup>-GaAs heterostructure for photodetection applications.
- Published in:
- Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-023-06256-9
- By:
- Publication type:
- Article
Effects of the Growth Facet Shape of Self‐Catalyzed GaAs Nanowires on the Zinc‐Blende–Wurtzite Switching.
- Published in:
- Physica Status Solidi (B), 2024, v. 261, n. 4, p. 1, doi. 10.1002/pssb.202300367
- By:
- Publication type:
- Article
Performance Analysis of Plasmonic Nano-antenna Based on Graphene with Different Dielectric Substrate Materials for Optoelectronics Application.
- Published in:
- Plasmonics, 2024, v. 19, n. 2, p. 865, doi. 10.1007/s11468-023-02030-5
- By:
- Publication type:
- Article
High-Density Polyethylene Custom Focusing Lenses for High-Resolution Transient Terahertz Biomedical Imaging Sensors.
- Published in:
- Sensors (14248220), 2024, v. 24, n. 7, p. 2066, doi. 10.3390/s24072066
- By:
- Publication type:
- Article
Theoretical Investigation and Improvement of Characteristics of InAs/GaAs Quantum Dot Intermediate Band Solar Cells by Optimizing Quantum Dot Dimensions.
- Published in:
- Symmetry (20738994), 2024, v. 16, n. 4, p. 435, doi. 10.3390/sym16040435
- By:
- Publication type:
- Article
Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 6, p. 1399, doi. 10.3390/ma17061399
- By:
- Publication type:
- Article
Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion.
- Published in:
- Advanced Energy Materials, 2024, v. 14, n. 10, p. 1, doi. 10.1002/aenm.202303367
- By:
- Publication type:
- Article
A Multilayered GaAs IPD Resonator with Five Airbridges for Sensor System Application.
- Published in:
- Micromachines, 2024, v. 15, n. 3, p. 367, doi. 10.3390/mi15030367
- By:
- Publication type:
- Article
Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy<sub>2</sub>O<sub>3</sub> nano-layer processed by electron beam evaporation on n-GaAs substrate.
- Published in:
- Optical & Quantum Electronics, 2024, v. 56, n. 3, p. 1, doi. 10.1007/s11082-023-05866-7
- By:
- Publication type:
- Article
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact.
- Published in:
- Solar RRL, 2024, v. 8, n. 5, p. 1, doi. 10.1002/solr.202300889
- By:
- Publication type:
- Article
Influence of spatial extension of impurity on the nonlinear optical properties of doped GaAs quantum dot in presence of noise.
- Published in:
- Modern Physics Letters B, 2024, v. 38, n. 5, p. 1, doi. 10.1142/S0217984923502421
- By:
- Publication type:
- Article
Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 4, p. 375, doi. 10.3390/nano14040375
- By:
- Publication type:
- Article
Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications.
- Published in:
- Micromachines, 2024, v. 15, n. 2, p. 204, doi. 10.3390/mi15020204
- By:
- Publication type:
- Article
Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 3, p. 294, doi. 10.3390/nano14030294
- By:
- Publication type:
- Article
Spectral Effects on the Energy Harvesting Efficiency of Two‐ and Four‐Terminal Tandem Photovoltaics.
- Published in:
- Solar RRL, 2024, v. 8, n. 3, p. 1, doi. 10.1002/solr.202300782
- By:
- Publication type:
- Article
24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy.
- Published in:
- Advanced Energy Materials, 2024, v. 14, n. 3, p. 1, doi. 10.1002/aenm.202302035
- By:
- Publication type:
- Article
A Physical Model of Nanotwin Unit and Orientation Organization for Designing Mechanical Performance: Cases of InSb, GaAs, ZnS.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 3, p. 1, doi. 10.1002/adfm.202309174
- By:
- Publication type:
- Article
Creation of a Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for Power Applications in Integrated Circuit (IC) Technology.
- Published in:
- Grenze International Journal of Engineering & Technology (GIJET), 2024, v. 10, p. 1665
- By:
- Publication type:
- Article
On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band.
- Published in:
- Sensors (14248220), 2024, v. 24, n. 2, p. 321, doi. 10.3390/s24020321
- By:
- Publication type:
- Article
Axially lattice-matched wurtzite/rock-salt GaAs/Pb<sub>1−x</sub>Sn<sub>x</sub>Te nanowires.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-51200-w
- By:
- Publication type:
- Article
Molecular beam epitaxy of high-quality GaAs on Si (001) by multi-time thermal cycle annealing.
- Published in:
- Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 1, p. 1, doi. 10.1007/s00339-023-07162-3
- By:
- Publication type:
- Article
Time Domain Simulated Characterization of the Coplanar Waveguide in an On-Chip System for Millimeter Waveform Metrology.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 1, p. 145, doi. 10.3390/electronics13010145
- By:
- Publication type:
- Article
Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs.
- Published in:
- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 1, p. 1, doi. 10.21272/jnep.16(1).01010
- By:
- Publication type:
- Article
A 10–20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology.
- Published in:
- Micromachines, 2024, v. 15, n. 1, p. 84, doi. 10.3390/mi15010084
- By:
- Publication type:
- Article
Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation.
- Published in:
- Micromachines, 2024, v. 15, n. 1, p. 110, doi. 10.3390/mi15010110
- By:
- Publication type:
- Article
Macroscopic and Mesoscopic Inhomogeneities of Electrophysical, Optical, and Photoelectric Characteristics in Chromium Compensated Gallium Arsenide Wafers.
- Published in:
- Russian Physics Journal, 2024, v. 66, n. 11, p. 1212, doi. 10.1007/s11182-023-03064-2
- By:
- Publication type:
- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
- Published in:
- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
- By:
- Publication type:
- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
- Published in:
- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
- By:
- Publication type:
- Article
Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
- Published in:
- Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093
- By:
- Publication type:
- Article