Works matching DE "GALLIUM antimonide"

Results: 189

Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication.

Published in:

Nano-Micro Letters, 2025, v. 17, n. 1, p. 1, doi. 10.1007/s40820-025-01793-2

By:

Wang, Guangcan;
Sa, Zixu;
Zang, Zeqi;
Li, Pengsheng;
Wang, Mingxu;
Yang, Bowen;
Wang, Xiaoyue;
Yin, Yanxue;
Yang, Zai-xing

Publication type:

Article

Single-longitudinal-mode InGaAsSb/AlGaAsSb lasers for gas sensing.

Published in:

Revista Cubana de Física, 2010, v. 27, n. 1, p. 42

By:

Barrios, P.;
Gupta, J.;
Lapointe, J.;
Aers, G.;
Storey, C.

Publication type:

Article

Effect of Cu electroless plating on thermoelectric properties of n-type Bi2Te2.4Se0.6 alloy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15018, doi. 10.1007/s10854-019-01874-0

By:

Huang, Zhong-yue;
Li, Hao-qiang;
Wang, Xiao-yu;
Jiang, Wei;
Zu, Fang-qiu

Publication type:

Article

Growth of Arsenic-Doped Hg1– xCdxTe (x ~ 0.4) Epilayers by Metalorganic Chemical Vapor Deposition.

Published in:

Inorganic Materials, 2019, v. 55, n. 10, p. 984, doi. 10.1134/S0020168519100029

By:

Evstigneev, V. S.;
Chilyasov, A. V.;
Moiseev, A. N.;
Kostyunin, M. V.

Publication type:

Article

Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH)CrO-HBr solutions.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 781, doi. 10.1134/S0020168517080106

By:

Levchenko, I.;
Stratiychuk, I.;
Tomashyk, V.;
Malanych, G.;
Stanetskaya, A.

Publication type:

Article

Topographic analysis of the surface of the GaSb〈Mn〉 magnetic semiconductor.

Published in:

Inorganic Materials, 2016, v. 52, n. 9, p. 865, doi. 10.1134/S0020168516090156

By:

Sanygin, V.;
Izotov, A.;
Pashkova, O.;
Baranchikov, A.;
Filatov, A.

Publication type:

Article

Morphology of GaSb-based island films.

Published in:

Inorganic Materials, 2012, v. 48, n. 1, p. 10, doi. 10.1134/S0020168512010098

By:

Kushkhov, A.;
Rabinovich, O.;
Gaev, D.

Publication type:

Article

Optical gain of CdxZn1−xTe quantum dot structures.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2023, v. 18, n. 9, p. 1, doi. 10.1049/mna2.12180

By:

Abdullah, Muwaffaq;
Al‐Nashy, Baqer O.;
Al‐Khursan, Amin H.

Publication type:

Article

Low lattice thermal conductivity and high figure of merit in n-type doped full-Heusler compounds X2YAu (X = Sr, Ba; Y = as, Sb).

Published in:

International Journal of Energy Research, 2021, v. 45, n. 15, p. 20949, doi. 10.1002/er.7154

By:

Weiqiang Wang;
Zhenhong Dai;
Xichang Wang;
Qi Zhong;
Yinchang Zhao;
Sheng Meng

Publication type:

Article

Tuning of thermoelectric transport properties via the formation of hierarchical structures in Bi-doped Gd2O3/Bi0.5Sb1.5Te3 nanocomposites.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 15, p. 20921, doi. 10.1002/er.7148

By:

May Likha Lwin;
Peyala Dharmaiah;
Byeong Ho Min;
Gian Song;
Kyeong Youl Jung;
Soon-Jik Hong

Publication type:

Article

Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000083

By:

Silpawilawan, Wanthana;
Tanuslip, Sora‐at;
Chetty, Raju;
Ohta, Michihiro;
Ohishi, Yuji;
Muta, Hiroaki;
Kurosaki, Ken

Publication type:

Article

Enhanced Thermoelectric Performance in N‐Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201901391

By:

Zhang, Fan;
Chen, Chen;
Li, Shan;
Yin, Li;
Yu, Bo;
Sui, Jiehe;
Cao, Feng;
Liu, Xingjun;
Ren, Zhifeng;
Zhang, Qian

Publication type:

Article

A 2 µm Gallium Antimonide Semiconductor Laser Based on Slanted, Wedge-Shaped Microlens Fiber Coupling.

Published in:

Photonics, 2024, v. 11, n. 2, p. 108, doi. 10.3390/photonics11020108

By:

Liu, Zhaohong;
Wang, Jiayue;
Li, Ning;
Yang, Zhongwei;
Li, Shaowen;
Li, Sensen;
Wang, Wei;
Bayan, Heshig;
Cheng, Weining;
Zhang, Yu;
Wu, Zhuokun;
Sun, Hongyu;
Xia, Yuanqing;
Wang, Yulei;
Lu, Zhiwei

Publication type:

Article

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 12, p. N.PAG, doi. 10.1002/pssr.201900474

By:

Du, Peng;
Fang, Xuan;
Gong, Qian;
Li, Jiaming;
Kou, Xufeng;
Zhao, Hongbin;
Wang, Xiaohua

Publication type:

Article

Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors.

Published in:

Opto-Electronics Review, 2024, v. 32, n. 4, p. 1, doi. 10.24425/opelre.2024.152620

By:

Jarosz, Dawid;
Bobko, Ewa;
Trzyna-Sowa, Małgorzata;
Przeździecka, Ewa;
Stachowicz, Marcin;
Ruszała, Marta;
Krzemiński, Piotr;
Juś, Anna;
Maś, Kinga;
Wojnarowska-Nowak, Renata;
Nowak, Oskar;
Gudyka, Daria;
Tabor, Brajan;
Marchewka, Michał

Publication type:

Article

Growth and Characterization of Pure and Sm-Doped Sb2Te3 Single Crystal.

Published in:

Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 10, p. 2601, doi. 10.1007/s10948-022-06363-w

By:

Kumar, Kapil;
Kumar, Yogesh;
Awana, V. P. S.

Publication type:

Article

Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 13, p. 1, doi. 10.1007/s11082-023-05421-4

By:

Ghoniem, Monira G.;
Adam, Fatima A.;
Abdulkhair, Babiker Y.;
Abdelghany, A. M.;
Elkenany, Elkenany B.

Publication type:

Article

First-principles calculations to investigate structural, electronic and optical properties of In-doped aluminium antimonide alloy for optoelectronic applications.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 9, p. 1, doi. 10.1007/s11082-023-05091-2

By:

Nabi, Shafqat;
Anwar, Abdul Waheed;
Ahmad, Muhammad;
Ul Haq, Najam;
Haider, Muhammad Waqas;
Wazir, Zafar;
Tayyab, Muhammad;
Moin, Muhammad;
Ali, Anwar;
Afzal, Muhammad;
Nabi, Kashif

Publication type:

Article

DFT study of Se and Te doped SrTiO3 for enhanced visible-light driven phtocatalytic hydrogen production.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03214-1

By:

Bentour, H.;
Boujnah, M.;
Houmad, M.;
El Yadari, M.;
Benyoussef, A.;
El Kenz, A.

Publication type:

Article

1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 1, p. 1, doi. 10.1007/s11082-017-1308-9

By:

Ciura, Łukasz;
Kolek, Andrzej;
Jureńczyk, Jarosław;
Czuba, Krzysztof;
Jasik, Agata;
Sankowska, Iwona;
Kaniewski, Janusz

Publication type:

Article

The Influence of Annealing in Zinc Vapor on the Visible and Mid-IR Luminescence of ZnSe:Fe2+.

Published in:

Optics & Spectroscopy, 2020, v. 128, n. 11, p. 1844, doi. 10.1134/S0030400X20110089

By:

Boryakov, A. V.;
Gladilin, A. A.;
Il'ichev, N. N.;
Kalinushkin, V. P.;
Mironov, S. A.;
Rezvanov, R. R.;
Uvarov, O. V.;
Chegnov, V. P.;
Chegnova, O. I.;
Chukichev, M. V.;
Shiryaev, A. A.

Publication type:

Article

A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy.

Published in:

Catalysts (2073-4344), 2022, v. 12, n. 5, p. 451, doi. 10.3390/catal12050451

By:

Devkota, Shisir;
Parakh, Mehul;
Ramaswamy, Priyanka;
Kuchoor, Hirandeep;
Penn, Aubrey;
Reynolds, Lewis;
Iyer, Shanthi

Publication type:

Article

Degradation Mechanism and Enhancing Strategies of Oxygen Reduction Reaction Catalyzed by Carbon‐Based Metal Free Catalysts in Acidic Solution.

Published in:

Advanced Energy Materials, 2023, v. 13, n. 1, p. 1, doi. 10.1002/aenm.202203159

By:

Li, Yan;
Nong, Wei;
Zeng, Zhihao;
Wang, Chengxin

Publication type:

Article

Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 315, doi. 10.1134/S1063782621030106

By:

Kabanov, V. F.;
Mikhailov, A. I.;
Gavrikov, M. V.

Publication type:

Article

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1563, doi. 10.1134/S1063782619160152

By:

Levin, R. V.;
Vlasov, A. S.;
Smirnov, A. N.;
Pushnyi, B. V.

Publication type:

Article

Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1037, doi. 10.1134/S1063782618080146

By:

Mikhailova, M. P.;
Andreev, I. A.;
Konovalov, G. G.;
Danilov, L. V.;
Ivanov, E. V.;
Kunitsyna, E. V.;
Il’inskaya, N. D.;
Levin, R. V.;
Pushnyi, B. V.;
Yakovlev, Yu. P.

Publication type:

Article

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1101, doi. 10.1134/S1063782617080310

By:

Sokura, L.;
Parkhomenko, Ya.;
Moiseev, K.;
Nevedomsky, V.;
Bert, N.

Publication type:

Article

Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100).

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1093, doi. 10.1134/S106378261708019X

By:

Lebedev, M.;
Lvova, T.;
Pavlov, S.;
Sedova, I.

Publication type:

Article

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.

Published in:

Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109

By:

Krishtopenko, S.;
Ikonnikov, A.;
Maremyanin, K.;
Bovkun, L.;
Spirin, K.;
Kadykov, A.;
Marcinkiewicz, M.;
Ruffenach, S.;
Consejo, C.;
Teppe, F.;
Knap, W.;
Semyagin, B.;
Putyato, M.;
Emelyanov, E.;
Preobrazhenskii, V.;
Gavrilenko, V.

Publication type:

Article

GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1338, doi. 10.1134/S1063782616100146

By:

Khvostikov, V.;
Sorokina, S.;
Khvostikova, O.;
Levin, R.;
Pushnyi, B.;
Timoshina, N.;
Andreev, V.

Publication type:

Article

First-principles calculations of the electronic and structural properties of GaSb.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1280, doi. 10.1134/S1063782616100110

By:

Castaño-González, E.-E.;
Seña, N.;
Mendoza-Estrada, V.;
González-Hernández, R.;
Dussan, A.;
Mesa, F.

Publication type:

Article

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 976, doi. 10.1134/S1063782616070198

By:

Parkhomenko, Ya.;
Dement'ev, P.;
Moiseev, K.

Publication type:

Article

GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1079, doi. 10.1134/S1063782615080114

By:

Khvostikov, V.;
Sorokina, S.;
Soldatenkov, F.;
Timoshina, N.

Publication type:

Article

Formation of III-V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 962, doi. 10.1134/S1063782615070234

By:

Vasil'ev, V.;
Gagis, G.;
Kuchinskii, V.;
Danil'chenko, V.

Publication type:

Article

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level.

Published in:

Semiconductors, 2015, v. 49, n. 6, p. 763, doi. 10.1134/S1063782615060068

By:

Boiko, V.;
Brudnii, V.;
Ermakov, V.;
Kolin, N.;
Korulin, A.

Publication type:

Article

High-efficiency GaSb photocells.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 307, doi. 10.1134/S1063782613020139

By:

Khvostikov, V.;
Sorokina, S.;
Khvostikova, O.;
Timoshina, N.;
Potapovich, N.;
Ber, B.;
Kazantsev, D.;
Andreev, V.

Publication type:

Article

New system of self-assembled GaSb/GaP quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020

By:

Abramkin, D.;
Putyato, M.;
Gutakovskii, A.;
Semyagin, B.;
Preobrazhenskii, V.;
Shamirzaev, T.

Publication type:

Article

Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals.

Published in:

Semiconductors, 2012, v. 46, n. 11, p. 1432, doi. 10.1134/S106378261211005X

By:

Berkovits, V.;
Gordeeva, A.;
L'vova, T.;
Ulin, V.

Publication type:

Article

Electron–Phonon Coupling and Carrier Relaxation Times in Gallium Antimonide Under Strain.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1161, doi. 10.1007/s11664-023-10877-x

By:

Tandon, Nandan;
Albrecht, J. D.;
Badescu, S. C.

Publication type:

Article

Crossover from n- to p-Type Charge Carriers in Cr-Substituted Bi2Te3 Single Crystal.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 12, p. 7891, doi. 10.1007/s11664-023-10731-0

By:

Baral, Sonali;
Lakhani, Archana

Publication type:

Article

Structural and Magnetic Properties of Nitrogen Acceptor Co-doped (Zn,Fe)Te Thin Films Grown in Zn-Rich Condition by Molecular Beam Epitaxy (MBE).

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 10, p. 5739, doi. 10.1007/s11664-020-08311-7

By:

Saha, Indrajit;
Tomohiro, Yuta;
Kanazawa, Ken;
Nitani, Hiroaki;
Kuroda, Shinji

Publication type:

Article

Representation of an Improved Heterostructure Junctionless Tunneling FET Based on the Drain/Gate Oxide and Hetero-Dielectric Engineering.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5865, doi. 10.1007/s11664-019-07335-y

By:

Abedini, Maryam;
Sedigh Ziabari, Seyed Ali;
Eskandarian, Abdollah

Publication type:

Article

Efficient Use of Low-Bandgap GaAs/GaSb to Convert More than 50% of Solar Radiation into Electrical Energy: A Numerical Approach.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 560, doi. 10.1007/s11664-018-6743-2

By:

Sahoo, G. S.;
Mishra, G. P.

Publication type:

Article

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3867, doi. 10.1007/s11664-017-5305-3

By:

Ni, Pei-Nan;
Tong, Jin-Chao;
Tobing, Landobasa;
Qiu, Shu-Peng;
Xu, Zheng-Ji;
Tang, Xiao-Hong;
Zhang, Dao-Hua

Publication type:

Article

Investigation of Surface Defects in AlInSb Metamorphic Buffer (MB) Grown on GaSb.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6258, doi. 10.1007/s11664-016-5032-1

By:

Addamane, Sadhvikas;
Shima, Darryl;
Soudachanh, Amy;
Hains, Christopher;
Dawson, Ralph;
Balakrishnan, Ganesh

Publication type:

Article

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3036, doi. 10.1007/s11664-015-3756-y

By:

Ting, David;
Soibel, Alexander;
Höglund, Linda;
Gunapala, Sarath

Publication type:

Article

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3180, doi. 10.1007/s11664-015-3876-4

By:

Lei, W.;
Gu, R. J.;
Antoszewski, J.;
Dell, J.;
Neusser, G.;
Sieger, M.;
Mizaikoff, B.;
Faraone, L.

Publication type:

Article

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1327, doi. 10.1007/s11664-015-3625-8

By:

Renteria, E.;
Muniz, A.;
Addamane, S.;
Shima, D.;
Hains, C.;
Balakrishnan, G.

Publication type:

Article

Effects of Lattice Relaxation on Composition and Morphology in Strained InGaAsSb Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1311, doi. 10.1007/s11664-015-3662-3

By:

Meyer, Charles;
Cole, Nicholas;
Matzat, Corey;
Cheng, Emily;
Triplett, Gregory

Publication type:

Article

GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2788, doi. 10.1007/s11664-014-3049-x

By:

Lei, W.;
Gu, R.;
Antoszewski, J.;
Dell, J.;
Faraone, L.

Publication type:

Article