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Photoelectric properties of monolayer 1T-CrS<sub>2</sub> modified by doping non-metal atoms under strains.
- Published in:
- Modern Physics Letters B, 2024, v. 38, n. 23, p. 1, doi. 10.1142/S0217984924502026
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- Article
Effect of Te doping in SnO<sub>2</sub> in Sn and O sites: A DFT study.
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- Modern Physics Letters B, 2024, v. 38, n. 21, p. 1, doi. 10.1142/S0217984923420083
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- Article
Indium Gallium Arsenide/Gallium Arsenide Antimonide Type II Superlattice Photodetector That Can Utilize Night Airglow.
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- Sensors & Materials, 2024, v. 36, n. 6, Part 1, p. 2183, doi. 10.18494/SAM4997
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- Article
First-Principles Study of Doped CdX (X = Te , Se) Compounds: Enhancing Thermoelectric Properties.
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- Materials (1996-1944), 2024, v. 17, n. 8, p. 1797, doi. 10.3390/ma17081797
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- Article
On electrical transport and thermoelectric performance in Half-Heusler phase ScNiSb.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 6, p. 1, doi. 10.1142/S021797922450084X
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- Article
Electron–Phonon Coupling and Carrier Relaxation Times in Gallium Antimonide Under Strain.
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- Journal of Electronic Materials, 2024, v. 53, n. 3, p. 1161, doi. 10.1007/s11664-023-10877-x
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- Article
A 2 µm Gallium Antimonide Semiconductor Laser Based on Slanted, Wedge-Shaped Microlens Fiber Coupling.
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- Photonics, 2024, v. 11, n. 2, p. 108, doi. 10.3390/photonics11020108
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- Article
Optimizing the Charge Carrier Dynamics of Thermal Evaporated Te<sub>x</sub>Se<sub>1‐x</sub> Films for High‐Performance Short‐Wavelength Infrared Photodetection.
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- Advanced Functional Materials, 2024, v. 34, n. 3, p. 1, doi. 10.1002/adfm.202307005
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- Article
Temperature-Dependent Electromagnetic Surface Wave Supported by Graphene-Loaded Indium Antimonide Planar Structure.
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- International Journal of Optics, 2024, p. 1, doi. 10.1155/2024/9607121
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- Article
Resonant excitation of terahertz surface magnetoplasmons by optical rectification over a rippled surface of n-type indium antimonide.
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- Journal of Plasma Physics, 2024, v. 90, n. 1, p. 1, doi. 10.1017/S0022377823001459
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- Article
Obtaining Textured Nickel Antimonide Films.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 12, p. 1447, doi. 10.1134/S1064226923120112
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- Article
Crossover from n- to p-Type Charge Carriers in Cr-Substituted Bi<sub>2</sub>Te<sub>3</sub> Single Crystal.
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- Journal of Electronic Materials, 2023, v. 52, n. 12, p. 7891, doi. 10.1007/s11664-023-10731-0
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- Article
Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure.
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- Optical & Quantum Electronics, 2023, v. 55, n. 13, p. 1, doi. 10.1007/s11082-023-05421-4
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- Article
Te-Doped Bi 2 Se 3 @NC Nanocomposites for High-Performance Li-Ion Battery Anodes.
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- Sustainability (2071-1050), 2023, v. 15, n. 23, p. 16210, doi. 10.3390/su152316210
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- Article
Improved Thermoelectric Performance of Sb 2 Te 3 Nanosheets by Coating Pt Particles in Wide Medium-Temperature Zone.
- Published in:
- Materials (1996-1944), 2023, v. 16, n. 21, p. 6961, doi. 10.3390/ma16216961
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- Article
Optimizing Thermoelectric Performance of Tellurium via Doping with Antimony and Selenium.
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- Molecules, 2023, v. 28, n. 21, p. 7287, doi. 10.3390/molecules28217287
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- Article
DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector.
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- Physica Status Solidi (B), 2023, v. 260, n. 11, p. 1, doi. 10.1002/pssb.202300299
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- Article
Enhanced Thermoelectric Performance of Lightly Pb-Doped Sb<sub>2</sub>Te<sub>3</sub> Polycrystalline Alloys for Power Generation in Midtemperature Range.
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- International Journal of Energy Research, 2023, p. 1, doi. 10.1155/2023/9077811
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- Article
Electronic Structure and Transport Properties of Bi 2 Te 3 and Bi 2 Se 3 Single Crystals.
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- Micromachines, 2023, v. 14, n. 10, p. 1888, doi. 10.3390/mi14101888
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- Article
Er 掺杂MnBi<sub>2</sub>Te<sub>4</sub> 晶体生长及其微结构研究.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 9, p. 1635
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- Article
Optical gain of Cd<sub>x</sub>Zn<sub>1−</sub><sub>x</sub>Te quantum dot structures.
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- Micro & Nano Letters (Wiley-Blackwell), 2023, v. 18, n. 9, p. 1, doi. 10.1049/mna2.12180
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- Article
Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution.
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- Micromachines, 2023, v. 14, n. 9, p. 1801, doi. 10.3390/mi14091801
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- Article
First-principles calculations to investigate structural, electronic and optical properties of In-doped aluminium antimonide alloy for optoelectronic applications.
- Published in:
- Optical & Quantum Electronics, 2023, v. 55, n. 9, p. 1, doi. 10.1007/s11082-023-05091-2
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- Article
Structural Characterization and Thermoelectric Properties of Br-Doped AgSn m [Sb 0.8 Bi 0.2 ]Te 2+ m Systems.
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- Materials (1996-1944), 2023, v. 16, n. 15, p. 5213, doi. 10.3390/ma16155213
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- Article
High Concentration Intrinsic Defects in MnSb 2 Te 4.
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- Materials (1996-1944), 2023, v. 16, n. 15, p. 5496, doi. 10.3390/ma16155496
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- Article
Simulation aided design of a high efficient GaSb based single-junction solar cell.
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- International Review of Applied Sciences & Engineering, 2023, v. 14, n. 2, p. 201, doi. 10.1556/1848.2022.00494
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- Publication type:
- Article
Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 2023, v. 260, n. 7, p. 1, doi. 10.1002/pssb.202300034
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- Publication type:
- Article
Enhanced Thermoelectric Transport Properties of n-Type SnSe<sub>2</sub> Polycrystalline Alloys by Te Doping.
- Published in:
- International Journal of Energy Research, 2023, p. 1, doi. 10.1155/2023/2900242
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- Article
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Long‐Term Electronic Synapses for Neuromorphic Computing.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213296
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- Article
Improved thermoelectric performance of Se-doped n-type nanostructured Bi<sub>2</sub>Te<sub>3</sub>.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 13, p. 1, doi. 10.1007/s10854-023-10490-y
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- Article
Enhancing the Thermoelectric Performance of GeSb 4 Te 7 Compounds via Alloying Se.
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- Materials (1996-1944), 2023, v. 16, n. 9, p. 3368, doi. 10.3390/ma16093368
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- Article
Advantages of Ta-Doped Sb 3 Te 1 Materials for Phase Change Memory Applications.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 633, doi. 10.3390/nano13040633
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- Article
The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb 2 Te 3.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 671, doi. 10.3390/nano13040671
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- Article
Cu(In,Ga)Se<sub>2</sub> based ultrathin solar cells the pathway from lab rigid to large scale flexible technology.
- Published in:
- NPJ Flexible Electronics, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41528-023-00237-4
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- Article
Observation of Focused Ion Beam-Induced Artifacts in Transmission Electron Microscopy Samples Leading to the Epitaxial Growth of AlGaSb Quantum Dots on the GaSb Substrate.
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- Microscopy & Microanalysis, 2023, v. 29, n. 1, p. 138, doi. 10.1093/micmic/ozac008
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- Article
Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection.
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- Nano Research, 2023, v. 16, n. 2, p. 3304, doi. 10.1007/s12274-022-4931-0
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- Article
Degradation Mechanism and Enhancing Strategies of Oxygen Reduction Reaction Catalyzed by Carbon‐Based Metal Free Catalysts in Acidic Solution.
- Published in:
- Advanced Energy Materials, 2023, v. 13, n. 1, p. 1, doi. 10.1002/aenm.202203159
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- Article
Structural and performance radiation protection the phosphate glasses contain: Te, K, Al, Nb-doped with rare earth.
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- Chalcogenide Letters, 2023, v. 20, n. 1, p. 43, doi. 10.15251/CL.2023.201.43
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- Article
STRUCTURE, THERMAL, AND PHYSIC-CHEMICAL PROPERTIES OF SOME CHALCOGENIDE ALLOYS.
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- Thermal Science, 2023, v. 27, n. 1A, p. 397, doi. 10.2298/TSCI221001195A
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- Article
Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 12, p. 1846, doi. 10.3390/cryst12121846
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- Article
Simulation and Investigation of 26% Efficient and Robust Inverted Planar Perovskite Solar Cells Based on GA 0.2 FA 0.78 SnI 3 -1%EDAI 2 Films.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 21, p. 3885, doi. 10.3390/nano12213885
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- Article
Robust UV Plasmonic Properties of Co-Doped Ag 2 Te.
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- Crystals (2073-4352), 2022, v. 12, n. 10, p. 1469, doi. 10.3390/cryst12101469
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- Article
Spectroscopic investigation of novel yellow-emitting Li<sub>3</sub>Bi<sub>3</sub>Te<sub>2</sub>O<sub>12</sub>:Dy<sup>3+</sup> phosphors with high thermal stability for w-LEDs applications.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 28, p. 22508, doi. 10.1007/s10854-022-09030-x
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- Article
Growth and Characterization of Pure and Sm-Doped Sb<sub>2</sub>Te<sub>3</sub> Single Crystal.
- Published in:
- Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 10, p. 2601, doi. 10.1007/s10948-022-06363-w
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- Article
Analysis of the Development Level of Green Economy in Different Regions Based on the GA-BP Model.
- Published in:
- 2022
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- Publication type:
- journal article
Solar-blind ultraviolet photodetector based on Ti-doped Ga<sub>2</sub>O<sub>3</sub>/Si p–n heterojunction.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 25, p. 20223, doi. 10.1007/s10854-022-08840-3
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- Publication type:
- Article
Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag 2 O/β-Ga 2 O 3 Heterojunction.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 2983, doi. 10.3390/nano12172983
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- Article
Thermophotovoltaic performance of a porous medium combustor with external heat recovery and multiple injectors.
- Published in:
- Journal of Mechanical Science & Technology, 2022, v. 36, n. 8, p. 4315, doi. 10.1007/s12206-022-0748-8
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- Article
Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method.
- Published in:
- Crystallography Reports, 2022, v. 67, n. 3, p. 323, doi. 10.1134/S1063774522030245
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- Article
Thermoelectric properties of nitrogen-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 16, p. 12750, doi. 10.1007/s10854-022-08221-w
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- Publication type:
- Article