Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 10, p. 1, doi. 10.1002/adfm.201705250
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- Publication type:
- Article
Works matching DE "FIELD-effect transistors -- Design %26 construction"
Results: 8
1
2
Toward High-Output Organic Vertical Field Effect Transistors: Key Design Parameters.
- Published in:
- Advanced Functional Materials, 2016, v. 26, n. 38, p. 6888, doi. 10.1002/adfm.201601956
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- Publication type:
- Article
3
Method for increasing the carrier mobility in the channel of the 4 H-SiC MOSFET.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 824, doi. 10.1134/S1063782616060178
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- Publication type:
- Article
4
Room temperature FET.
- Published in:
- Chemical Engineering, 2008, v. 115, n. 7, p. 13
- Publication type:
- Article
5
Spin transistors: Going electric.
- Published in:
- Nature Materials, 2015, v. 14, n. 2, p. 134, doi. 10.1038/nmat4207
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- Publication type:
- Article
6
Design of Highly Linear FET Resistive Mixers.
- Published in:
- Microwave Journal, 2018, v. 61, n. 4, p. 76
- By:
- Publication type:
- Article
7
Design of Linear SiGe IC Downconverters.
- Published in:
- Microwave Journal, 2013, v. 56, n. 3, p. 78
- By:
- Publication type:
- Article
8
Our choice from the recent literature.
- Published in:
- Nature Physics, 2010, v. 6, n. 1, p. 4, doi. 10.1038/nphys1490
- Publication type:
- Article