Works matching DE "FIELD-effect transistors -- Design %26 construction"
1
- Advanced Functional Materials, 2016, v. 26, n. 38, p. 6888, doi. 10.1002/adfm.201601956
- Kwon, Hyukyun;
- Kim, Mincheol;
- Cho, Hyunsu;
- Moon, Hanul;
- Lee, Jongjin;
- Yoo, Seunghyup
- Article
2
- Chemical Engineering, 2008, v. 115, n. 7, p. 13
- Article
3
- Nature Physics, 2010, v. 6, n. 1, p. 4, doi. 10.1038/nphys1490
- Article
4
- Advanced Functional Materials, 2018, v. 28, n. 10, p. 1, doi. 10.1002/adfm.201705250
- Georgiou, Vasileia;
- Veksler, Dmitry;
- Campbell, Jason P.;
- Shrestha, Pragya R.;
- Ryan, Jason T.;
- Ioannou, Dimitris E.;
- Cheung, Kin P.
- Article
5
- Microwave Journal, 2013, v. 56, n. 3, p. 78
- KRISHNAMURTHI, KATHIRAVAN;
- ZHIYANG LIU;
- GRESHAM, IAN
- Article
6
- Microwave Journal, 2018, v. 61, n. 4, p. 76
- Clements, Matthew S.;
- Avery, Steve E.;
- Barber, Richard
- Article
7
- Semiconductors, 2016, v. 50, n. 6, p. 824, doi. 10.1134/S1063782616060178
- Mikhaylov, A.;
- Afanasyev, A.;
- Ilyin, V.;
- Luchinin, V.;
- Reshanov, S.;
- Schöner, A.
- Article
8
- Nature Materials, 2015, v. 14, n. 2, p. 134, doi. 10.1038/nmat4207
- Article