Works about FIELD-effect transistors

Results: 4492

Electrical Characteristics and Analytical Modeling of GAA-Based Nanowire FeFET.

Published in:

NANO (1793-2920), 2025, v. 20, n. 8, p. 1, doi. 10.1142/S1793292024501753

By:

Singh, Mandeep;
Chaudhary, Tarun;
Wadhwa, Girish;
Thakur, Anchal;
Raj, Balwinder

Publication type:

Article

Raman spectroscopy-based detection of as-grown suspended carbon nanotubes for integration into sensors.

Published in:

Journal of Sensors & Sensor Systems, 2025, v. 14, n. 1, p. 67, doi. 10.5194/jsss-14-67-2025

By:

Monnerat, Nicolas;
Kraiem, Ines;
Roman, Cosmin Ioan;
Hierold, Christofer;
Haluška, Miroslav

Publication type:

Article

Design and development of solid state circuit breaker with residual current protection for residential prosumer DC microgrids.

Published in:

Proceedings of the Estonian Academy of Sciences, 2025, v. 74, p. 281, doi. 10.3176/proc.2025.2S.02

By:

Jalakas, Tanel;
Chub, Andrii;
Roasto, Indrek;
Vinnikov, Dmitri;
Kurnitski, Jarek

Publication type:

Article

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400686

By:

Lehninger, David;
Müller, Franz;
Raffel, Yannick;
Yang, Shouzhuo;
Neuber, Markus;
Abdulazhanov, Sukhrob;
Kämpfe, Thomas;
Seidel, Konrad;
Lederer, Maximilian

Publication type:

Article

Recent Advances in Enhancing the Sensitivity of Biosensors Based on Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400712

By:

Zhou, Yuying;
Feng, Tongshi;
Li, Yao;
Ao, Xiang;
Liang, Shengfa;
Yang, Xiaonan;
Wang, Lingfei;
Xu, Xiaoxin;
Zhang, Wenchang

Publication type:

Article

High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-59684-4

By:

Ghosh, Subir;
Sadaf, Muhtasim Ul Karim;
Graves, Andrew R.;
Zheng, Yikai;
Pannone, Andrew;
Ray, Samriddha;
Cheng, Chung-Yu;
Guevara, Jeremy;
Redwing, Joan M.;
Das, Saptarshi

Publication type:

Article

Design and Comparative Analysis of Vertical and Planar Tunnel Field Effect Transistors for Analog Performance Parameters.

Published in:

Engineering Letters, 2025, v. 33, n. 7, p. 2272

By:

Saraswathi, V.;
Siddaiah, N.

Publication type:

Article

High Performance and PVT Variation Tolerant Design for a Ternary Multiplier Using GNRFET Technology.

Published in:

Circuits, Systems & Signal Processing, 2025, v. 44, n. 7, p. 4559, doi. 10.1007/s00034-025-03034-8

By:

Basha, Shaik Javid;
Elbarbary, Ahmed;
Mahmoud, Haitham A.;
Venkatramana, P.

Publication type:

Article

XRD Study of Tetrachlorosubstituted Tin Phthalocyanines.

Published in:

Journal of Structural Chemistry, 2025, v. 66, n. 6, p. 1285, doi. 10.1134/S0022476625060137

By:

Sukhikh, A. S.;
Klyamer, D. D.;
Zelepukhina, I. N.;
Bonegardt, D. V.;
Basova, T. V.

Publication type:

Article

Thin Epitaxial Ionic Fluoride Films for Electronics Applications.

Published in:

Surfaces (2571-9637), 2025, v. 8, n. 2, p. 22, doi. 10.3390/surfaces8020022

By:

Giovanelli, Giulia;
Borghi, Mauro;
Lodi, Alessandro;
Grasser, Tibor;
Pasquali, Luca

Publication type:

Article

Ultra-Thin Al 2 O 3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors.

Published in:

Journal of Low Power Electronics & Applications, 2025, v. 15, n. 2, p. 26, doi. 10.3390/jlpea15020026

By:

Sun, Shiwei;
Ma, Dinghao;
Ye, Boxi;
Liu, Guanshun;
Luo, Nanting;
Huang, Hao

Publication type:

Article

Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 690, doi. 10.3390/mi16060690

By:

Tamersit, Khalil;
Kouzou, Abdellah;
Rodriguez, José;
Abdelrahem, Mohamed

Publication type:

Article

Energy Efficient Tri-State CNFET Ternary Logic Gates.

Published in:

International Journal of Nanoscience, 2022, v. 21, n. 4, p. 1, doi. 10.1142/S0219581X22500247

By:

Tabrizchi, Sepehr;
Sharifi, Fazel;
Badawy, Abdel-Hameed

Publication type:

Article

Performance Comparison for FinFET Nanoscale Static and Domino Logic Circuits.

Published in:

International Journal of Nanoscience, 2022, v. 21, n. 2, p. 1, doi. 10.1142/S0219581X22500120

By:

Riaz, Anjum;
Sharma, Vijay Kumar

Publication type:

Article

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length.

Published in:

International Journal of Nanoscience, 2018, v. 17, n. 1/2, p. -1, doi. 10.1142/S0219581X1760016X

By:

Tiwari, Durgesh Laxman;
Sivasankaran, K.

Publication type:

Article

A Study on Theoretical Performance of Graphene FET using Analytical Approach with Reference to High Cutoff Frequency.

Published in:

International Journal of Nanoscience, 2016, v. 15, n. 3, p. 1, doi. 10.1142/S0219581X16400019

By:

Fahim-Al-Fattah, Md.;
Rahman, Md. Tawabur;
Islam, Md. Sherajul;
Bhuiyan, Ashraful G.

Publication type:

Article

Ballistic Performance Study of Nanowire FET: Effect of Channel Materials and Phonon Scattering.

Published in:

International Journal of Nanoscience, 2016, v. 15, n. 3, p. 1, doi. 10.1142/S0219581X16400032

By:

Iztihad, Hossain Md.;
Khan, Touhid;
Sufian, Abu;
Alam, Md. Nur Kutubul;
Mollah, Md. Nurunnabi;
Islam, Md. Rafiqul

Publication type:

Article

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping.

Published in:

International Journal of Nanoscience, 2015, v. 14, n. 3, p. -1, doi. 10.1142/S0219581X14500252

By:

Goswami, Yogesh;
Asthana, Pranav;
Basak, Shibir;
Ghosh, Bahniman

Publication type:

Article

DESIGN DIFFERENT TOPOLOGY FOR REDUCTION OF LOW POWER 2:1 MULTIPLEXER USING FINFET IN NANOMETER TECHNOLOGIES.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 4, p. -1, doi. 10.1142/S0219581X13500269

By:

MISHRA, KHUSHBOO;
AKASHE, SHYAM

Publication type:

Article

ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X1240011X

By:

ROSAZ, G.;
SALEM, B.;
PAUC, N.;
GENTILE, P.;
POTIÉ, A.;
SOLANKI, A.;
BASSANI, F.;
BARON, T.;
CAGNON, L.

Publication type:

Article

THE IMPACT OF CHANNEL ENGINEERING ON SHORT CHANNEL BEHAVIOR OF NANO FIN-FETs.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 2, p. 1250021-1, doi. 10.1142/S0219581X12500214

By:

KUMARI, RITI;
GOSWAMI, MANISH;
SINGH, B. R.

Publication type:

Article

NANOSCALE GATE INSULATOR FOR ORGANIC FIELD EFFECT TRANSISTOR APPLICATIONS.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 765, doi. 10.1142/S0219581X11008964

By:

DAS, A.;
RAJAGOPALAN, S.;
DHARA, S.;
PRABAKAR, K.;
DASH, S.;
TYAGI, A. K.;
RAJ, BALDEV

Publication type:

Article

ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 263, doi. 10.1142/S0219581X10006776

By:

Sh. HUSSEIN, A.;
HASSAN, Z.;
HASSAN, H. ABU;
THAHAB, S. M.

Publication type:

Article

COMPARISON OF THE HYDROTHERMAL AND VPT GROWN ZnO NANOWIRE FIELD EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 317, doi. 10.1142/S0219581X10006880

By:

WANG, YE;
SUN, XIAO WEI;
ZHAO, JUNLIANG;
GOH, GREGORY KIA LIANG;
CHEN, LANLAN;
LIEW, LAURA-LYNN;
QIU, JIJUN;
HWANG, YOON-HWAE

Publication type:

Article

FABRICATION OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS WITH OCMC DISPERSED SINGLE-WALLED CARBON NANOTUBES.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 377, doi. 10.1142/S0219581X10006995

By:

RAJ, KUMAR;
ZHANG, QING;
YAN, LIANGYU;
PARK, MARY B. CHAN

Publication type:

Article

PARAMETRIC STUDY ON THE SYNTHESIS OF SINGLE WALL CARBON NANOTUBE BY GAS ARC-DISCHARGE METHOD WITH MULTIPLE LINEAR REGRESSIONS AND ARTIFICIAL NEURAL NETWORK.

Published in:

International Journal of Nanoscience, 2009, v. 8, n. 3, p. 243, doi. 10.1142/S0219581X09006146

By:

Seresht, Razieh Jabari;
Jahanshahi, Mohsen;
Barzegar, Masoud

Publication type:

Article

ATOMISTIC SIMULATION OF GATE EFFECT ON NANOSCALE INTRINSIC Si FIELD-EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2009, v. 8, n. 1/2, p. 113, doi. 10.1142/S0219581X09005827

By:

WANG, X. F.;
ZHAO, L. N.;
YAO, Z. H.;
HOU, Z. F.;
YEE, M.;
ZHOU, X.;
LIN, S. H.;
LEE, T. S.

Publication type:

Article

IMPEDANCE ANALYSIS FOR CHARACTERIZATION OF MATERIALS USED IN ORGANIC TRANSISTORS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 4/5, p. 395, doi. 10.1142/S0219581X0600453X

By:

LI, CHANG MING;
PAN, LIKUN;
GAN, YE;
SUN, CHAN QING;
ZHANG, JIE;
GAMOTA, DAN

Publication type:

Article

CHARGE STORAGE IN CARBON NANOTUBE FIELD-EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 4/5, p. 553, doi. 10.1142/S0219581X06004784

By:

LI, HONG;
ZHANG, QING;
LI, JINGQI

Publication type:

Article

DC AND AC ANALYSES OF NOVEL SOI MOSFET DEVICES USING 2D AND 3D NUMERICAL SIMULATIONS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 4/5, p. 639, doi. 10.1142/S0219581X06004917

By:

CHUNG, TSUNG MING;
RASKIN, JEAN-PIERRE

Publication type:

Article

GATE LENGTH SCALING AND MICROWAVE PERFORMANCE OF DOUBLE GATE NANOTRANSISTORS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 5/6, p. 1021, doi. 10.1142/S0219581X05004005

By:

Kranti, Abhinav;
Chung, Tsung Ming;
Raskin, Jean-Pierre

Publication type:

Article

MODELING OF DEEP-SUBMICRON MOSFET DRIVE CURRENT.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 4, p. 525, doi. 10.1142/S0219581X05003243

By:

FRANCIS, BENISTANT

Publication type:

Article

IMPEDANCE CHARACTERIZATION OF DIELECTRIC AND SEMICONDUCTING MATERIALS WITH ORGANIC CAPACITORS FOR ORGANIC TRANSISTORS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 4, p. 451, doi. 10.1142/S0219581X05003668

By:

LI, C. M.;
PAN, L. K.;
SUN, C. Q.;
ZHANG, J.;
GAMOTA, DAN

Publication type:

Article

FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 155, doi. 10.1142/S0219581X04001936

By:

Nastaushev, Yu. V.;
Gavrilova, T. A.;
Kachanova, M. M.;
Naumova, O. V.;
Antonova, I. V.;
Popov, V. P.;
Litvin, L. V.;
Sheglov, D. V.;
Latyshev, A. V.;
Aseev, A. L.

Publication type:

Article

FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 161, doi. 10.1142/S0219581X04001948

By:

Rotkin, Slava V.;
Ruda, Harry E.;
Shik, Alexander

Publication type:

Article

Development of a Biosensor Based on Phosphotriesterase and n-Channel ISFET for Detection of Pesticides.

Published in:

Electroanalysis, 2016, v. 28, n. 6, p. 1311, doi. 10.1002/elan.201500411

By:

Andrianova, M. S.;
Gubanova, O. V.;
Komarova, N. V.;
Kuznetsov, E. V.;
Kuznetsov, A. E.

Publication type:

Article

Effect of Intercalated LiF on Interface Contact Characteristics of MoS2 Field Effect Transistor: A First‐Principles Study.

Published in:

Annalen der Physik, 2023, v. 535, n. 7, p. 1, doi. 10.1002/andp.202300061

By:

Hou, Weimin;
Chen, Li;
Yang, Maoyou;
Zhang, Mingjian;
Wang, Junmei;
Shi, Jiakuo;
Su, Shuo;
Zhang, Duo;
Wu, Hongping

Publication type:

Article

Investigations on Field-Effect Transistors Based on Two-Dimensional Materials.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700087

By:

Finge, T.;
Riederer, F.;
Mueller, M. R.;
Grap, T.;
Kallis, K.;
Knoch, J.

Publication type:

Article

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors.

Published in:

Annalen der Physik, 2017, v. 529, n. 11, p. n/a, doi. 10.1002/andp.201700106

By:

Pandey, Himadri;
Aguirre‐Morales, Jorge‐Daniel;
Kataria, Satender;
Fregonese, Sebastien;
Passi, Vikram;
Iannazzo, Mario;
Zimmer, Thomas;
Alarcon, Eduard;
Lemme, Max C.

Publication type:

Article

MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5328, doi. 10.1002/adfm.201600771

By:

Xu, Jiao;
Shim, Jaewoo;
Park, Jin‐Hong;
Lee, Sungjoo

Publication type:

Article

Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 23, p. 4223, doi. 10.1002/adfm.201600292

By:

Zhou, Changjian;
Zhao, Yuda;
Raju, Salahuddin;
Wang, Yi;
Lin, Ziyuan;
Chan, Mansun;
Chai, Yang

Publication type:

Article

Metal Based Nonvolatile Field-Effect Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 20, p. 3490, doi. 10.1002/adfm.201600048

By:

Bi, Chong;
Xu, Meng;
Almasi, Hamid;
Rosales, Macus;
Wang, Weigang

Publication type:

Article

2D Single-Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating-Coffee-Ring-Driven Assembly.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 19, p. 3191, doi. 10.1002/adfm.201600304

By:

Wang, Qijing;
Qian, Jun;
Li, Yun;
Zhang, Yuhan;
He, Daowei;
Jiang, Sai;
Wang, Yu;
Wang, Xinran;
Pan, Lijia;
Wang, Junzhuan;
Wang, Xizhang;
Hu, Zheng;
Nan, Haiyan;
Ni, Zhenhua;
Zheng, Youdou;
Shi, Yi

Publication type:

Article

Donor-Acceptor Poly(3-hexylthiophene)- block-Pendent Poly(isoindigo) with Dual Roles of Charge Transporting and Storage Layer for High-Performance Transistor-Type Memory Applications.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 16, p. 2695, doi. 10.1002/adfm.201504957

By:

Wang, Jau‐Tzeng;
Takashima, Shoichi;
Wu, Hung‐Chin;
Chiu, Yu‐Cheng;
Chen, Yougen;
Isono, Takuya;
Kakuchi, Toyoji;
Satoh, Toshifumi;
Chen, Wen‐Chang

Publication type:

Article

Polymorphism: Understanding Polymorph Transformations in Core-Chlorinated Naphthalene Diimides and their Impact on Thin-Film Transistor Performance (Adv. Funct. Mater. 14/2016).

Published in:

Advanced Functional Materials, 2016, v. 26, n. 14, p. 2395, doi. 10.1002/adfm.201670088

By:

Purdum, Geoffrey E.;
Yao, Nan;
Woll, Arthur;
Gessner, Thomas;
Weitz, Ralf Thomas;
Loo, Yueh‐Lin

Publication type:

Article

Temperature Dependence of Charge Localization in High-Mobility, Solution-Crystallized Small Molecule Semiconductors Studied by Charge Modulation Spectroscopy.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 14, p. 2326, doi. 10.1002/adfm.201502502

By:

Meneau, Aurélie Y. B.;
Olivier, Yoann;
Backlund, Tomas;
James, Mark;
Breiby, Dag Werner;
Andreasen, Jens Wenzel;
Sirringhaus, Henning

Publication type:

Article

High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 1, p. 91, doi. 10.1002/adfm.201503698

By:

Alsaif, Manal M. Y. A.;
Chrimes, Adam F.;
Daeneke, Torben;
Balendhran, Sivacarendran;
Bellisario, Darin O.;
Son, Youngwoo;
Field, Matthew R.;
Zhang, Wei;
Nili, Hussein;
Nguyen, Emily P.;
Latham, Kay;
van Embden, Joel;
Strano, Michael S.;
Ou, Jian Zhen;
Kalantar‐zadeh, Kourosh

Publication type:

Article

High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 46, p. 7208, doi. 10.1002/adfm.201502008

By:

Shokouh, Seyed Hossein Hosseini;
Jeon, Pyo Jin;
Pezeshki, Atiye;
Choi, Kyunghee;
Lee, Hee Sung;
Kim, Jin Sung;
Park, Eun Young;
Im, Seongil

Publication type:

Article

Direct Patterning of Self-Assembled Monolayers by Stamp Printing Method and Applications in High Performance Organic Field-Effect Transistors and Complementary Inverters.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 38, p. 6112, doi. 10.1002/adfm.201503245

By:

Zhang, Zhichao;
Ren, Xiaochen;
Peng, Boyu;
Wang, Zongrong;
Wang, Xinyu;
Pei, Ke;
Shan, Bowen;
Miao, Qian;
Chan, Paddy K. L.

Publication type:

Article

Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 33, p. 5376, doi. 10.1002/adfm.201501263

By:

Cernetic, Nathan;
Weidner, Tobias;
Baio, Joe E.;
Lu, Hao;
Ma, Hong;
Jen, Alex K.‐Y.

Publication type:

Article