P-7: High Speed a-IGZO TFT-based Gate Driver by using Back Channel Etched Structure.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 968, doi. 10.1002/j.2168-0159.2014.tb00251.x
- By:
- Publication type:
- Article
Works matching DE "FIELD-effect transistor circuits"
Results: 9
1
2
Improving speed of tunnel FETs logic circuits.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 21, p. 1702, doi. 10.1049/el.2015.2416
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- Publication type:
- Article
3
Effects of fin width on high-κ/metal gate bulk FinFET devices.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1160, doi. 10.1049/el.2014.1117
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- Publication type:
- Article
4
Transilient Response to Acetone Gas Using the Interlocking p+n Field-Effect Transistor Circuit.
- Published in:
- Sensors (14248220), 2018, v. 18, n. 6, p. 1914, doi. 10.3390/s18061914
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- Publication type:
- Article
5
Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.
- Published in:
- Sensors (14248220), 2017, v. 17, n. 4, p. 705, doi. 10.3390/s17040705
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- Publication type:
- Article
6
A systematic class AB state space synthesis method based on MOSFET square law and translinear square-root cells.
- Published in:
- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 241, doi. 10.1002/cta.2054
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- Publication type:
- Article
7
A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Temperature Dependent Foster (RC) Thermal Network.
- Published in:
- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04017
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- Publication type:
- Article
8
Stable MoS<sub>2</sub> Field-Effect Transistors Using TiO<sub>2</sub> Interfacial Layer at Metal/MoS<sub>2</sub> Contact (Phys. Status Solidi A 12∕2017).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 12, p. n/a, doi. 10.1002/pssa.201770171
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- Publication type:
- Article
9
Performance projection of III-nitride heterojunction nanowire tunneling field-effect transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 905, doi. 10.1002/pssa.201532564
- By:
- Publication type:
- Article