Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET.
- Published in:
- International Journal of Electronics Letters, 2020, v. 8, n. 3, p. 304, doi. 10.1080/21681724.2019.1600729
- By:
- Publication type:
- Article
Works matching DE "FIELD effect transistor switches"
Results: 43
1
2
Investigation of high-voltage integral pulse thyristors in single-pulse and pulse-train modes.
- Published in:
- Instruments & Experimental Techniques, 2016, v. 59, n. 3, p. 351, doi. 10.1134/S0020441216020202
- By:
- Publication type:
- Article
3
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104
- By:
- Publication type:
- Article
4
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 234, doi. 10.1134/S1063782615020086
- By:
- Publication type:
- Article
5
Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II-VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic.
- Published in:
- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3108, doi. 10.1007/s11664-015-3827-0
- By:
- Publication type:
- Article
6
一种考虑最坏工况的双有源桥变换器参数 优化设计方法.
- Published in:
- Electric Machines & Control / Dianji Yu Kongzhi Xuebao, 2019, v. 23, n. 10, p. 1, doi. 10.15938/j.emc.2019.10.001
- By:
- Publication type:
- Article
7
Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch.
- Published in:
- Journal of Engineering (2314-4912), 2016, p. 1, doi. 10.1155/2016/7345232
- By:
- Publication type:
- Article
8
Efficiency Improvement for a DC-DC Quadratic Power Boost Converter by Applying a Switch Turn-off Lossless Snubber Structure Based on Zero Voltage Switching.
- Published in:
- Electronics & Electrical Engineering, 2018, v. 24, n. 3, p. 15, doi. 10.5755/j01.eie.24.3.20977
- By:
- Publication type:
- Article
9
High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics.
- Published in:
- Scientific Reports, 2015, p. 16871, doi. 10.1038/srep16871
- By:
- Publication type:
- Article
10
An 8-Bit Ultra-Low-Power, Low-Voltage Current Steering DAC Utilizing a New Segmented Structure.
- Published in:
- Journal of Circuits, Systems & Computers, 2019, v. 28, n. 10, p. N.PAG, doi. 10.1142/S021812661950172X
- By:
- Publication type:
- Article
11
Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 16, p. -1, doi. 10.1142/S0217979215501076
- By:
- Publication type:
- Article
12
Performance of OCTO Layout Style on SOI MOSFET Switches under High-temperature Operation.
- Published in:
- Journal of Integrated Circuits & Systems, 2019, v. 14, n. 2, p. 1, doi. 10.29292/jics.v14i2.34
- By:
- Publication type:
- Article
13
Boosting the MOSFETs Matching by Using Diamond Layout Style.
- Published in:
- Journal of Integrated Circuits & Systems, 2017, v. 12, n. 1, p. 33, doi. 10.29292/jics.v12i1.448
- By:
- Publication type:
- Article
14
Role of strain and nanoscale defects in modifying the multiferroicity in nanostructured BiFeO 3 films.
- Published in:
- Journal of Experimental Nanoscience, 2015, v. 10, n. 14, p. 1057, doi. 10.1080/17458080.2014.953608
- By:
- Publication type:
- Article
15
Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 7, p. 1, doi. 10.1002/mmce.22212
- By:
- Publication type:
- Article
16
Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2019, v. 29, n. 6, p. N.PAG, doi. 10.1002/mmce.21690
- By:
- Publication type:
- Article
17
Investigation of output voltages depending on load in multi output flyback converter.
- Published in:
- Journal of Polytechnic, 2018, v. 21, n. 3, p. 693, doi. 10.2339/politeknik.389612
- By:
- Publication type:
- Article
18
Switch Open-Fault Detection for a Three-Phase Hybrid Active Neutral-Point-Clamped Rectifier.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1437, doi. 10.3390/electronics9091437
- By:
- Publication type:
- Article
19
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 2, p. 270, doi. 10.3390/electronics9020270
- By:
- Publication type:
- Article
20
Performance Analysis of Noise and Low Power in Memristor Based 2:1 Multiplexer Using FinFET.
- Published in:
- Journal of Active & Passive Electronic Devices, 2017, v. 12, n. 1/2, p. 119
- By:
- Publication type:
- Article
21
Measurement of Switching Performance of Pixelated Silicon Sensor Integrated with Field Effect Transistor.
- Published in:
- Sensors (14248220), 2019, v. 19, n. 24, p. 5580, doi. 10.3390/s19245580
- By:
- Publication type:
- Article
22
Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays.
- Published in:
- Advanced Functional Materials, 2017, v. 27, n. 2, p. n/a, doi. 10.1002/adfm.201603682
- By:
- Publication type:
- Article
23
Design of a gate driver for SiC MOSFET module for applications up to 1200 V.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 7, p. 1364, doi. 10.1049/iet-pel.2019.0422
- By:
- Publication type:
- Article
24
Exploitation of MOSFET-based AC switches in capacitive impedance matching networks in inductive wireless power transfer systems.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 4, p. 713, doi. 10.1049/iet-pel.2019.0614
- By:
- Publication type:
- Article
25
Low-cost analogue active gate driver for SiC MOSFET to enable operation in higher parasitic environment.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 463, doi. 10.1049/iet-pel.2019.0589
- By:
- Publication type:
- Article
26
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 668, doi. 10.1049/iet-pel.2017.0403
- By:
- Publication type:
- Article
27
Method to improve trade-off performance for splitgate power U-shape metal-oxide semiconductor fieldeffect transistor with compound trench dielectrics.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 8, p. 2030, doi. 10.1049/iet-pel.2013.0786
- By:
- Publication type:
- Article
28
Fuzzified Single Phase Automatic Sequential Reactive Power Compensation with Minimized Switches.
- Published in:
- Telkomnika, 2018, v. 16, n. 2, p. 889, doi. 10.12928/TELKOMNIKA.v16i2.9024
- By:
- Publication type:
- Article
29
A Microelectromechanical Switch with Metamaterial Contacts, Part I: Concepts and Technology.
- Published in:
- Microwave Journal, 2020, v. 63, n. 5, p. 82
- By:
- Publication type:
- Article
30
An extended high-voltage-gain DC–DC converter with reduced voltage stress on switches/diodes.
- Published in:
- Electrical Engineering, 2020, v. 102, n. 4, p. 2435, doi. 10.1007/s00202-020-01040-4
- By:
- Publication type:
- Article
31
A novel non-isolated high step-up DC–DC boost converter using single switch for renewable energy systems.
- Published in:
- Electrical Engineering, 2020, v. 102, n. 2, p. 811, doi. 10.1007/s00202-019-00904-8
- By:
- Publication type:
- Article
32
Mm-wave single-pole single-throw m-HEMT switch with low loss and high linearity.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 14, p. 719, doi. 10.1049/el.2020.0969
- By:
- Publication type:
- Article
33
Wpływ obwodów odciążających na łączeniowe straty energii w przekształtnikach wysokiej częstotliwości.
- Published in:
- Przegląd Elektrotechniczny, 2020, v. 96, n. 6, p. 93, doi. 10.15199/48.2020.06.17
- By:
- Publication type:
- Article
34
Application of GaN HEMT as a bidirectional switch in matrix converter.
- Published in:
- Przegląd Elektrotechniczny, 2019, v. 95, n. 8, p. 160, doi. 10.15199/48.2019.08.34
- By:
- Publication type:
- Article
35
Design and Development of Non-Isolated Modified SEPIC DC-DC Converter Topology for High-Step-Up Applications: Investigation and Hardware Implementation.
- Published in:
- Energies (19961073), 2020, v. 13, n. 15, p. 3960, doi. 10.3390/en13153960
- By:
- Publication type:
- Article
36
SiC-Based Bidirectional Multilevel High-Voltage Gain Switched-Capacitor Resonant Converter with Improved Efficiency.
- Published in:
- Energies (19961073), 2020, v. 13, n. 10, p. 2445, doi. 10.3390/en13102445
- By:
- Publication type:
- Article
37
Isolated high voltage-boosting converter derived from forward converter.
- Published in:
- International Journal of Circuit Theory & Applications, 2016, v. 44, n. 2, p. 280, doi. 10.1002/cta.2076
- By:
- Publication type:
- Article
38
THE INCREASING HARMONIC EFFECTS OF SSPWM MULTILEVEL INVERTER CONTROLLING LOAD CURRENTS INVESTIGATED ON MODULATION INDEX.
- Published in:
- Technical Gazette / Tehnički Vjesnik, 2017, v. 24, n. 2, p. 397, doi. 10.17559/TV-20151020134629
- By:
- Publication type:
- Article
39
SSPWM THREE PHASE INVERTER DESIGN AND EXPERIMENTED ON UNBALANCED LOADS.
- Published in:
- Technical Gazette / Tehnički Vjesnik, 2016, v. 23, n. 5, p. 1239, doi. 10.17559/TV-20150730222021
- By:
- Publication type:
- Article
40
Graphene nanoribbons: Chemical stitching.
- Published in:
- Nature Nanotechnology, 2014, v. 9, n. 11, p. 875, doi. 10.1038/nnano.2014.257
- By:
- Publication type:
- Article
41
Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 883, doi. 10.1002/pssa.201532547
- By:
- Publication type:
- Article
42
Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors.
- Published in:
- International Journal of High Speed Electronics & Systems, 2014, v. 23, n. 3/4, p. -1, doi. 10.1142/S0129156414500232
- By:
- Publication type:
- Article
43
Stoner-Type Theory of Magnetism in Silicon MOSFETs.
- Published in:
- Journal of Low Temperature Physics, 2017, v. 188, n. 3/4, p. 67, doi. 10.1007/s10909-017-1781-3
- By:
- Publication type:
- Article