Breaking polarization-breakdown strength paradox for ultrahigh energy storage density in NBT-based ceramics.
- Published in:
- Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-61030-7
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- Publication type:
- Article
Works matching DE "FERROELECTRIC capacitors"
Results: 140
1
2
Physical Mechanisms behind the Field-Cycling Behavior of HfO<sub>2</sub>-Based Ferroelectric Capacitors.
- Published in:
- Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590
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- Publication type:
- Article
3
外延 Ba0.6 Sr<sub>0.4</sub>TiO<sub>3</sub> 铁电薄膜的制备及介电储能性能.
- Published in:
- Journal of South China Normal University (Natural Science Edition) / Huanan Shifan Daxue Xuebao (Ziran Kexue Ban), 2024, v. 56, n. 4, p. 54, doi. 10.6054/j.jscnun.2024050
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- Publication type:
- Article
4
A Framework for Embedded Non-Volatile Memory Development: Examples from Pb(Zr x Ti 1−x)O 3 Ferroelectric Memory Development at Texas Instruments.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 818, doi. 10.3390/electronics14040818
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- Publication type:
- Article
5
Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO 2 Interlayer for Improved Endurance and Leakage Current.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 22, p. 4515, doi. 10.3390/electronics13224515
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- Article
6
Novel Topology for Modified Boost Series and Parallel Switching Capacitor DC-DC Converter.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 22, p. 4439, doi. 10.3390/electronics13224439
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- Publication type:
- Article
7
Optimal Process Design for Wake-Up Free Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 15, p. 2895, doi. 10.3390/electronics13152895
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- Publication type:
- Article
8
Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 6, p. 1021, doi. 10.3390/electronics13061021
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- Publication type:
- Article
9
The Excellent Bending Limit of a Flexible Si-Based Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitor with an Al Buffer Layer.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 1, p. 24, doi. 10.3390/electronics13010024
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- Article
10
Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 10, p. 2297, doi. 10.3390/electronics12102297
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- Publication type:
- Article
11
Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 11, p. 1324, doi. 10.3390/electronics10111324
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- Publication type:
- Article
12
Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2141, doi. 10.3390/electronics9122141
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- Publication type:
- Article
13
Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 8, p. 1208, doi. 10.3390/electronics9081208
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- Publication type:
- Article
14
Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 5, p. 704, doi. 10.3390/electronics9050704
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- Publication type:
- Article
15
Polarization fatigue of organic ferroelectric capacitors.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05075
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- Publication type:
- Article
16
Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO<sub>3</sub>.
- Published in:
- NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00345-5
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- Publication type:
- Article
17
Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300778
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- Publication type:
- Article
18
Dipole‐Switchable Poly(para‐phenyleneethynylene)s: Ferroelectric Conjugated Polymers.
- Published in:
- Angewandte Chemie, 2018, v. 130, n. 52, p. 17265, doi. 10.1002/ange.201808827
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- Article
19
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 16, p. 840, doi. 10.1049/el.2020.0423
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- Publication type:
- Article
20
Cover Feature: Ferroelectric Fractional-Order Capacitors (ChemElectroChem 11/2017).
- Published in:
- ChemElectroChem, 2017, v. 4, n. 11, p. 2725, doi. 10.1002/celc.201701044
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- Publication type:
- Article
21
Ferroelectric capacitive memories: devices, arrays, and applications.
- Published in:
- Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-024-00463-0
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- Publication type:
- Article
22
Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads.
- Published in:
- Scientific Reports, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41598-024-59298-8
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- Publication type:
- Article
23
High-Performance Ferroelectric Capacitors Based on Pt/BaTiO 3 /SrRuO 3 /SrTiO 3 Heterostructures for Nonvolatile Memory Applications.
- Published in:
- Crystals (2073-4352), 2025, v. 15, n. 4, p. 337, doi. 10.3390/cryst15040337
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- Article
24
Performance and Characterization of Additively Manufactured BST Varactor Enhanced by Photonic Thermal Processing.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 11, p. 990, doi. 10.3390/cryst14110990
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- Publication type:
- Article
25
Phase Transition and Energy Storage Density in Lead-Free Ferroelectric Ba 1−x Sr x TiO 3 (x = 0.1, 0.3, and 0.7) Capacitors.
- Published in:
- Crystals (2073-4352), 2023, v. 13, n. 4, p. 630, doi. 10.3390/cryst13040630
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- Publication type:
- Article
26
Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance.
- Published in:
- Crystals (2073-4352), 2019, v. 9, n. 12, p. 673, doi. 10.3390/cryst9120673
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- Article
27
Structure and Electrical Properties of Na0.5Bi0.5TiO3 Epitaxial Films with (110) Orientation.
- Published in:
- Crystals (2073-4352), 2019, v. 9, n. 11, p. 558, doi. 10.3390/cryst9110558
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- Publication type:
- Article
28
Composite Right/Left-Handed Leaky-Wave Antenna with Electrical Beam Scanning Using Thin-Film Ferroelectric Capacitors.
- Published in:
- Coatings (2079-6412), 2024, v. 14, n. 1, p. 143, doi. 10.3390/coatings14010143
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- Article
29
Tunability Investigation in the BaTiO 3 -CaTiO 3 -BaZrO 3 Phase Diagram Using a Refined Combinatorial Thin Film Approach.
- Published in:
- Coatings (2079-6412), 2021, v. 11, n. 9, p. 1082, doi. 10.3390/coatings11091082
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- Article
30
Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices.
- Published in:
- Coatings (2079-6412), 2020, v. 10, n. 8, p. 733, doi. 10.3390/coatings10080733
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- Article
31
Improved Ferroelectric Performance of Mg-Doped LiNbO<sub>3</sub> Films by an Ideal Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub> Tunnel Switch Layer.
- Published in:
- Nanoscale Research Letters, 2019, v. 14, n. 1, p. N.PAG, doi. 10.1186/s11671-019-2970-6
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- Publication type:
- Article
32
Performance Analysis of a Charge Plasma Junctionless Nanotube Tunnel FET Including the Negative Capacitance Effect.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2349, doi. 10.1007/s11664-020-07969-3
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- Article
33
Highly transparent PZT capacitors on glass obtained by layer transfer process.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 36, p. 26825, doi. 10.1007/s10854-022-09347-7
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- Publication type:
- Article
34
Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 30, p. 23341, doi. 10.1007/s10854-022-09096-7
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- Article
35
Lanthanum-doped BiFeO<sub>3</sub>/ZrO<sub>2</sub> gate stack for ferroelectric field effect transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16189, doi. 10.1007/s10854-020-04073-4
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- Article
36
Ferroelectric polarization tuning the photovoltaic and diode-like effect of the Ni, Sm co-doped BiFeO<sub>3</sub> film capacitors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12163, doi. 10.1007/s10854-019-01574-9
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- Publication type:
- Article
37
Effect of Ba:Ti on ferroelectric properties of LiF doped BaTiO<sub>3</sub> ceramics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6556, doi. 10.1007/s10854-019-00962-5
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- Publication type:
- Article
38
Enhanced electrical and fatigue properties of La-modified (100)-oriented PZT thin films with various Zr/Ti ratio.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 4, p. 3585, doi. 10.1007/s10854-018-00636-8
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- Publication type:
- Article
39
Dielectric, tunability, leakage current, and ferroelectric properties of (K<sub>0.45</sub>Na<sub>0.55</sub>)<sub>0.95</sub>Li<sub>0.05</sub>NbO<sub>3</sub> lead free piezoelectric.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2659, doi. 10.1007/s10854-018-0542-7
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- Publication type:
- Article
40
Ferroelectric properties of Ag doped PbZr<sub>0.53</sub>Ti<sub>0.47</sub>O<sub>3</sub> thin film deposited by sol-gel process.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2592, doi. 10.1007/s10854-018-0534-7
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- Publication type:
- Article
41
Defect-relevant piezoelectric and ferroelectric properties in LiCuTa<sub>3</sub>O<sub>9</sub>-doped K<sub>0.5</sub>Na<sub>0.5</sub>NbO<sub>3</sub> lead-free piezoceramics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2563, doi. 10.1007/s10854-018-0531-x
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- Publication type:
- Article
42
Domain configuration evolution, dielectric, ferroelectric and piezoelectric properties of 0.32PIN-0.345PMN-0.335PT single crystals.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 17, p. 12929, doi. 10.1007/s10854-017-7123-z
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- Article
43
Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1819, doi. 10.1007/s10854-016-5731-7
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- Publication type:
- Article
44
Dielectric relaxation and impedance analysis of ferroelectric double perovskite PbBiNbO.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1824, doi. 10.1007/s10854-016-5732-6
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- Publication type:
- Article
45
SCI铁电负电容晶体管亚阈值特性研究.
- Published in:
- Piezoelectrics & Acoustooptics, 2019, v. 41, n. 5, p. 756, doi. 10.11977/j.issn.1004-2474.2019.05.031
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- Publication type:
- Article
46
Improved remnant polarization of Zr-doped HfO<sub>2</sub> ferroelectric film by CF<sub>4</sub>/O<sub>2</sub> plasma passivation.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-21263-8
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- Publication type:
- Article
47
Superior energy storage efficiency through tailoring relaxor behavior and band energy gap in KNN-based ferroelectric ceramic capacitors.
- Published in:
- Journal of Advanced Dielectrics, 2023, v. 13, n. 1, p. 1, doi. 10.1142/S2010135X22420012
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- Publication type:
- Article
48
Computational and experimental investigation of the crystal orientation control effect on the electric permittivity and magnetic permeability of multiferroic composite materials.
- Published in:
- Acta Mechanica, 2017, v. 228, n. 8, p. 2879, doi. 10.1007/s00707-015-1526-9
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- Article
49
The frequency-dependent behavior of a ferroelectric single crystal with dislocation arrays.
- Published in:
- Acta Mechanica, 2017, v. 228, n. 8, p. 2811, doi. 10.1007/s00707-015-1512-2
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- Article
50
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 22, p. 1, doi. 10.1002/pssa.202000281
- By:
- Publication type:
- Article