Works matching DE "FERROELECTRIC capacitors"

Results: 138

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 47, p. 8643, doi. 10.1002/adfm.201602869

By:

Hoffmann, Michael;
Pešić, Milan;
Chatterjee, Korok;
Khan, Asif I.;
Salahuddin, Sayeef;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590

By:

Pešić, Milan;
Fengler, Franz Paul Gustav;
Larcher, Luca;
Padovani, Andrea;
Schenk, Tony;
Grimley, Everett D.;
Sang, Xiahan;
LeBeau, James M.;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

Highly transparent PZT capacitors on glass obtained by layer transfer process.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 36, p. 26825, doi. 10.1007/s10854-022-09347-7

By:

Le Rhun, Gwenael;
Pavageau, Franklin;
Wagué, Baba;
Perreau, Pierre;
Licitra, Christophe;
Frey, Laurent;
Dieppedale, Christel

Publication type:

Article

Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 30, p. 23341, doi. 10.1007/s10854-022-09096-7

By:

Li, Yue;
Feng, Tianyang;
Sun, Tangyou;
Chen, Yonghe;
Zhang, Fabi;
Fu, Tao;
Wangyang, Peihua;
Li, Haiou;
Liu, Xingpeng

Publication type:

Article

Lanthanum-doped BiFeO3/ZrO2 gate stack for ferroelectric field effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16189, doi. 10.1007/s10854-020-04073-4

By:

Singh, Amit;
Singh, Sanjai

Publication type:

Article

Ferroelectric polarization tuning the photovoltaic and diode-like effect of the Ni, Sm co-doped BiFeO3 film capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12163, doi. 10.1007/s10854-019-01574-9

By:

Yang, Tiantian;
Wei, Jie;
Lv, Zhibin;
Xu, Zhuo;
Cheng, Zhenxiang

Publication type:

Article

Effect of Ba:Ti on ferroelectric properties of LiF doped BaTiO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6556, doi. 10.1007/s10854-019-00962-5

By:

Lou, Qiwei;
Zeng, Jiangtao;
Man, Zhenyong;
Zheng, Liaoying;
Park, Chulhong;
Li, Guorong

Publication type:

Article

Enhanced electrical and fatigue properties of La-modified (100)-oriented PZT thin films with various Zr/Ti ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 4, p. 3585, doi. 10.1007/s10854-018-00636-8

By:

Wang, Xing;
Zhou, Jiangang;
Qi, Liping;
Chen, Da;
Wang, Qiusen;
Dou, Jiao;
Wang, Fuan;
Zou, Helin

Publication type:

Article

Dielectric, tunability, leakage current, and ferroelectric properties of (K0.45Na0.55)0.95Li0.05NbO3 lead free piezoelectric.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2659, doi. 10.1007/s10854-018-0542-7

By:

Mahmoud, Abd El-razek;
Afify, Ahmed S.;
Parashar, S. K. S.

Publication type:

Article

Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol-gel process.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2592, doi. 10.1007/s10854-018-0534-7

By:

Wang, Jinxin;
Jiang, Guicheng;
Huang, Weicheng;
Chang, Yunfei;
Liu, Danqing;
Yang, Bin;
Cao, Wenwu

Publication type:

Article

Defect-relevant piezoelectric and ferroelectric properties in LiCuTa3O9-doped K0.5Na0.5NbO3 lead-free piezoceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2563, doi. 10.1007/s10854-018-0531-x

By:

Wang, Dongmei;
Liao, You;
Peng, Zhengxin;
Zheng, Qiaoji;
Wei, Xianhua;
Wang, Tao;
Lin, Dunmin

Publication type:

Article

Domain configuration evolution, dielectric, ferroelectric and piezoelectric properties of 0.32PIN-0.345PMN-0.335PT single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 17, p. 12929, doi. 10.1007/s10854-017-7123-z

By:

Zhu, Rongfeng;
Zhang, Qihui;
Fang, Bijun;
Ding, Jianning;
Zhao, Xiangyong;
Tang, Yanxue;
Luo, Haosu

Publication type:

Article

Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1819, doi. 10.1007/s10854-016-5731-7

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Dielectric relaxation and impedance analysis of ferroelectric double perovskite PbBiNbO.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1824, doi. 10.1007/s10854-016-5732-6

By:

Parida, B.;
Panda, Niranjan;
Padhee, R.;
Das, Piyush;
Choudhary, R.

Publication type:

Article

Ferroelectric polymers for non‐volatile memory devices: a review.

Published in:

Polymer International, 2020, v. 69, n. 6, p. 533, doi. 10.1002/pi.5980

By:

Li, Huilin;
Wang, Ruopeng;
Han, Su‐Ting;
Zhou, Ye

Publication type:

Article

Structural, magnetic and electric properties of pure, Pr, Ce doped and Ce–Mn co-doped bismuth ferrites.

Published in:

Integrated Ferroelectrics, 2018, v. 194, n. 1, p. 8, doi. 10.1080/10584587.2018.1514891

By:

Bangruwa, Jarnail S.;
Verma, Vivek

Publication type:

Article

Enhanced piezoelectric and ferroelectric properties of Nd doped Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramic system.

Published in:

Integrated Ferroelectrics, 2018, v. 194, n. 1, p. 115, doi. 10.1080/10584587.2018.1514874

By:

Mittal, Shreya;
Singh, K. Chandramani

Publication type:

Article

Structural, dielectric, ferroelectric and magnetic properties of Gd doped BiFeO3.

Published in:

Integrated Ferroelectrics, 2018, v. 194, n. 1, p. 21, doi. 10.1080/10584587.2018.1514869

By:

Gairola, S. P.;
Vashisth, Balesh Kumar;
Verma, Vivek;
Bangruwa, Jarnail S.

Publication type:

Article

Investigation of nanosized BaTio 3 obtained by novel chemical route: Structural, dielectric and ferroelectric properties.

Published in:

Integrated Ferroelectrics, 2017, v. 185, n. 1, p. 155, doi. 10.1080/10584587.2017.1370351

By:

Ansari, S. M.;
Keswani, B. C.;
Kolekar, Y. D.;
Sen, Debasis

Publication type:

Article

Effect of addition of zinc ferrite on dielectric and magnetic properties of (Ba,Ca)TiO 3 ceramics.

Published in:

Integrated Ferroelectrics, 2017, v. 185, n. 1, p. 147, doi. 10.1080/10584587.2017.1370350

By:

Shandilya, Mamta;
Rai, Radheshyam;
Sharma, Kanika;
Thakur, Diksha

Publication type:

Article

Analytic model for the electrical properties of negative capacitance metal-ferroelectric insulator silicon (MFIS) capacitor.

Published in:

Integrated Ferroelectrics, 2017, v. 185, n. 1, p. 93, doi. 10.1080/10584587.2017.1370345

By:

Rasool, Raheela;
Rather, G. M.;
ud-Din, Najeeb

Publication type:

Article

Adaptive Boolean Logic Using Ferroelectrics Capacitors as Basic Units of Artificial Neurons and Its Implementation in FPGA.

Published in:

Integrated Ferroelectrics, 2015, v. 159, n. 1, p. 23, doi. 10.1080/10584587.2015.1029408

By:

da Silva, Alan P. O.;
Leite, Cicilia R. M.;
McMillan, Larry;
Paz de Araujo, Carlos A.;
Fernandes, Marcelo A. C.;
Guerreiro, ANA M. G.

Publication type:

Article

Polarization Switching DC-to-DC Converters.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 122, doi. 10.1080/10584587.2014.912559

By:

Walters, Douglas D.;
Kalkur, Thottam S.

Publication type:

Article

Tunable Dual Band Filter with BST Capacitors.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 95, doi. 10.1080/10584587.2014.912109

By:

Aldeeb, Hassan;
Kalkur, T. S.

Publication type:

Article

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 71, doi. 10.1080/10584587.2014.912082

By:

Hunt, Mitchell R.;
Sayyah, Rana;
Mitchell, Cody;
McCartney, Crystal L.;
Macleod, Todd C.;
Ho, Fat D.

Publication type:

Article

Characteristics of a Three-Transistor DRAM Circuit Utilizing a Ferroelectric Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 31, doi. 10.1080/10584587.2014.911620

By:

Mitchell, Cody;
McCartney, Crystal L.;
Hunt, Mitchell;
Ho, Fat D.

Publication type:

Article

Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 23, doi. 10.1080/10584587.2014.911615

By:

John, Caroline S.;
Macleod, Todd C.;
Evans, Joe;
Ho, Fat D.

Publication type:

Article

Tunable Patch Antenna with BST Capacitors.

Published in:

Integrated Ferroelectrics, 2013, v. 141, n. 1, p. 112, doi. 10.1080/10584587.2013.780140

By:

Hmeda, Milad G.;
Kalkur, T. S.

Publication type:

Article

Computational and experimental investigation of the crystal orientation control effect on the electric permittivity and magnetic permeability of multiferroic composite materials.

Published in:

Acta Mechanica, 2017, v. 228, n. 8, p. 2879, doi. 10.1007/s00707-015-1526-9

By:

Uetsuji, Yasutomo;
Wada, Takeshi;
Uekita, Yasuyuki;
Terada, Jiro;
Tsuchiya, Kazuyoshi

Publication type:

Article

The frequency-dependent behavior of a ferroelectric single crystal with dislocation arrays.

Published in:

Acta Mechanica, 2017, v. 228, n. 8, p. 2811, doi. 10.1007/s00707-015-1512-2

By:

Wu, H.;
Cao, S.;
Zhu, J.;
Zhang, T.

Publication type:

Article

A ferroelectric fin diode for robust non-volatile memory.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-44759-5

By:

Feng, Guangdi;
Zhu, Qiuxiang;
Liu, Xuefeng;
Chen, Luqiu;
Zhao, Xiaoming;
Liu, Jianquan;
Xiong, Shaobing;
Shan, Kexiang;
Yang, Zhenzhong;
Bao, Qinye;
Yue, Fangyu;
Peng, Hui;
Huang, Rong;
Tang, Xiaodong;
Jiang, Jie;
Tang, Wei;
Guo, Xiaojun;
Wang, Jianlu;
Jiang, Anquan;
Dkhil, Brahim

Publication type:

Article

Broadband dielectric properties of multiwalled carbon nanotube/polystyrene composites.

Published in:

Polymer Engineering & Science, 2015, v. 55, n. 1, p. 173, doi. 10.1002/pen.23881

By:

Arjmand, Mohammad;
Sundararaj, Uttandaraman

Publication type:

Article

Hf0.5Zr0.5O2-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 16, p. 840, doi. 10.1049/el.2020.0423

By:

Tian, Guo-Liang;
Bi, Jin-Shun;
Xu, Gao-Bo;
Xi, Kai;
Xu, Yan-Nan;
Yang, Xue-Qin;
Yin, Hua-Xiang;
Xu, Qiu-Xia;
Li, Yong-Liang

Publication type:

Article

SCI铁电负电容晶体管亚阈值特性研究.

Published in:

Piezoelectrics & Acoustooptics, 2019, v. 41, n. 5, p. 756, doi. 10.11977/j.issn.1004-2474.2019.05.031

By:

王步冉;
李珍;
谭欣;
翟亚红

Publication type:

Article

REPRESENTATION OF THE CARDIOMYOCYTES OF THE HEART MUSCLE IN THE FORM OF AN ELECTRICAL CIRCUIT ELEMENT.

Published in:

Electronics & Control Systems, 2021, v. 67, n. 1, p. 78, doi. 10.18372/1990-5548.67.15613

By:

Melnikov, D. E.

Publication type:

Article

Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300778

By:

Park, Inseon;
Choi, Yejoo;
Shin, Changhwan

Publication type:

Article

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 22, p. 1, doi. 10.1002/pssa.202000281

By:

Mehmood, Furqan;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Negative Capacitance Transistor with Two‐Dimensional Channel Material (Molybdenum disulfide, MoS2).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 16, p. N.PAG, doi. 10.1002/pssa.201900177

By:

Choi, Hyunwoo;
Shin, Changhwan

Publication type:

Article

Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field.

Published in:

Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-00318-9

By:

Karpov, D.;
Liu, Z.;
dos Santos Rolo, T.;
Harder, R.;
Balachandran, P. V.;
Xue, D.;
Lookman, T.;
Fohtung, E.

Publication type:

Article

Tunable BaSrTiO3, BaZrTiO3 Ferroelectric Capacitors Embedded Inside Low Temperature Cofired Ceramics (LTCC).

Published in:

Journal of Microelectronic & Electronic Packaging, 2013, v. 10, n. 3, p. 95, doi. 10.4071/imaps.380

By:

Tork, Hossam S.;
Elshabini, Aicha;
Barlow, Fred

Publication type:

Article

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer.

Published in:

Nanoscale Research Letters, 2019, v. 14, n. 1, p. N.PAG, doi. 10.1186/s11671-019-2970-6

By:

Zhang, Yan;
Ren, Qing Hua;
Chai, Xiao Jie;
Jiang, Jun;
Yang, Jian Guo;
Jiang, An Quan

Publication type:

Article

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 50, p. 1, doi. 10.1002/adfm.202304606

By:

Cai, Songhua;
Guo, Changqing;
Niu, Ben;
Xie, Lin;
Addiego, Christopher;
Wu, Di;
Wang, Peng;
Lau, Shu Ping;
Huang, Houbing;
Pan, Xiaoqing

Publication type:

Article

Ultra‐Steep‐Slope and High‐Stability of CuInP2S6/WS2 Ferroelectric Negative Capacitor Transistors by Passivation Effect and Dual‐Gate Modulation.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 44, p. 1, doi. 10.1002/adfm.202306708

By:

Zhao, Lei;
Liang, Yunshan;
Ma, Jingyi;
Pan, Zhidong;
Liu, Xueting;
Yang, Mengmeng;
Sun, Yiming;
Gao, Wei;
Li, Bo;
Li, Jingbo;
Huo, Nengjie

Publication type:

Article

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 43, p. 1, doi. 10.1002/adfm.202303261

By:

Alcala, Ruben;
Materano, Monica;
Lomenzo, Patrick D.;
Vishnumurthy, Pramoda;
Hamouda, Wassim;
Dubourdieu, Catherine;
Kersch, Alfred;
Barrett, Nicolas;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Impact of metal grain work function variability on ferroelectric insulation based GAA MOSFET.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 10, p. 1378, doi. 10.1049/mnl.2018.5225

By:

Jena, Biswajit;
Dash, Sidhartha;
Mishra, Guru Prasad

Publication type:

Article

The ferroelectric field-effect transistor with negative capacitance.

Published in:

NPJ Computational Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41524-022-00738-2

By:

Luk'yanchuk, I.;
Razumnaya, A.;
Sené, A.;
Tikhonov, Y.;
Vinokur, V. M.

Publication type:

Article

Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films.

Published in:

Polymers (20734360), 2018, v. 10, n. 1, p. 6, doi. 10.3390/polym10010006

By:

Li, Long;
Zhang, Xiuli;
Chen, Hongzhen;
Sun, Xiaohui;
Yuan, Haidong;
Xu, Haisheng

Publication type:

Article

Enhanced Energy‐Storage Density and Resistive Switching Behavior in Lead‐Free Ba0.7Sr0.3TiO3/Ba0.6Sr0.4TiO3 Multilayer Thin Films.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 7, p. 1, doi. 10.1002/adem.202402610

By:

Chandrasekaran, Kaushiga;
Jawahar, Kesavan;
Reddy, Salla Gangi;
Annapureddy, Venkateswarlu

Publication type:

Article

Thermostable ferroelectric capacitors based on graded films of barium strontium titanate.

Published in:

Technical Physics, 2017, v. 62, n. 10, p. 1592, doi. 10.1134/S1063784217100231

By:

Tumarkin, A.;
Razumov, S.;
Volpyas, V.;
Gagarin, A.;
Odinets, A.;
Zlygostov, M.;
Sapego, E.

Publication type:

Article

Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 11, p. 1324, doi. 10.3390/electronics10111324

By:

Yu, Hanyeong;
Shin, Changhwan

Publication type:

Article