Works matching DE "FERROELECTRIC RAM"
Results: 157
Etching new IC materials for memory devices.
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- Solid State Technology, 1998, v. 41, n. 8, p. 53
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- Article
Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device.
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- Advanced Functional Materials, 2014, v. 24, n. 22, p. 3446, doi. 10.1002/adfm.201304004
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- Article
High-Performance Ferroelectric Memory Based on Phase-Separated Films of Polymer Blends.
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- Advanced Functional Materials, 2014, v. 24, n. 10, p. 1372, doi. 10.1002/adfm.201302056
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- Article
Switching memory cells constructed on plastic substrates with silver selenide nanoparticles.
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- Journal of Materials Science, 2011, v. 46, n. 21, p. 6767, doi. 10.1007/s10853-011-5633-2
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- Article
Memory characteristics of Al<sub>2</sub>O<sub>3</sub>/LaAlO<sub>3</sub>/SiO<sub>2</sub> multilayer structures with tunnel oxide thickness variation.
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- Journal of Materials Science, 2010, v. 45, n. 19, p. 5223, doi. 10.1007/s10853-010-4562-9
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- Article
Microstructures, ferromagnetic, and ferroelectric properties in polyvinylpyrrolidone-assisted CoFe<sub>2</sub>O<sub>4</sub>/Pb(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)O<sub>3</sub> multiferroic composite thick films.
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- Journal of Materials Science, 2009, v. 44, n. 18, p. 4939, doi. 10.1007/s10853-009-3754-7
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- Article
Ferroelectric and piezoelectric properties of [(Bi<sub>0.98</sub>La<sub>0.02</sub>Na<sub>1− x</sub>Li<sub> x</sub>)<sub>0.5</sub>]<sub>0.94</sub>Ba<sub>0.06</sub>TiO<sub>3</sub> lead-free ceramics.
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- Journal of Materials Science, 2009, v. 44, n. 18, p. 4953, doi. 10.1007/s10853-009-3756-5
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A Simple Fractionally Integrated Model with a Time-varying Long Memory Parameter d <sub> t </sub>.
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- Computational Economics, 2008, v. 31, n. 3, p. 225, doi. 10.1007/s10614-007-9115-1
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- Article
Au and Cu Atoms on NaCl(001): a single-atom based memory device prototype?
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- European Physical Journal B: Condensed Matter, 2010, v. 78, n. 4, p. 543, doi. 10.1140/epjb/e2010-90852-6
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- Article
Switched Current Memory Cell Using Floating Gate MOSFET.
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- Journal of Active & Passive Electronic Devices, 2007, v. 2, n. 4, p. 261
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- Article
Electrical properties of ferroelectric SBT thin films prepared using photosensitive sol-gel solution.
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- Journal of Materials Science, 2003, v. 38, n. 6, p. 1295, doi. 10.1023/A:1022846813081
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- Article
Geometric frustration in compositionally modulated ferroelectrics.
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- Nature, 2011, v. 470, n. 7335, p. 513, doi. 10.1038/nature09752
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- Article
‘Memristive’ switches enable ‘stateful’ logic operations via material implication.
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- Nature, 2010, v. 464, n. 7290, p. 873, doi. 10.1038/nature08940
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- Article
Synthetic biology: A circuit to remember.
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- 2013
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- journal article
Thermochemical resistive switching: materials, mechanisms, and scaling projections.
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- Phase Transitions, 2011, v. 84, n. 7, p. 570, doi. 10.1080/01411594.2011.561478
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- Article
Polymeric memory device with dual electrical and optical reading modes.
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- Optical Engineering, 2011, v. 50, n. 4, p. 044003, doi. 10.1117/1.3569693
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- Article
The Shape Memory Properties of Biodegradable Chitosan/Poly( l-lactide) Composites.
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- Journal of Polymers & the Environment, 2009, v. 17, n. 3, p. 212, doi. 10.1007/s10924-009-0141-z
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- Article
Mobile phones as a new memory aid: a preliminary investigation using case studies.
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- Brain Injury, 2001, v. 15, n. 4, p. 305, doi. 10.1080/026990501750111256
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- Article
Comprehension of the Electric Polarization as a Function of Low Temperature.
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- Journal of Low Temperature Physics, 2017, v. 186, n. 1/2, p. 163, doi. 10.1007/s10909-016-1662-1
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- Article
Record Endurance for Single-Walled Carbon Nanotube-Based Memory Cell.
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- Nanoscale Research Letters, 2010, v. 5, n. 11, p. 1852, doi. 10.1007/s11671-010-9727-6
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- Article
Direct drawing of gel fibers enabled by twist-gel spinning process.
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- Polymer Engineering & Science, 2015, v. 55, n. 6, p. 1389, doi. 10.1002/pen.24082
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- Article
Fabrication and dielectric properties of textured Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> ceramics by RTGG method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3
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- Article
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 111, doi. 10.1007/s10854-007-9516-x
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- Article
Preparation and structural characteristics of ZrT<sub>4</sub> thin films by plasma enhanced chemical vapor deposition.
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- Journal of Materials Science Letters, 2003, v. 22, n. 23, p. 1679, doi. 10.1023/B:JMSL.0000004647.81141.c3
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- Article
Electronics: Inside story of ferroelectric memories.
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- Nature, 2012, v. 483, n. 7389, p. 279, doi. 10.1038/483279a
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- Article
Problems in Crystal Chemistry of Ferroelectric and Antiferroelectric Perovskites PbB<sup>′</sup><sub>0.5</sub>B<sup>″</sup><sub>0.5</sub>O<sub>3</sub>.
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- Crystallography Reports, 2004, v. 49, n. 5, p. 719, doi. 10.1134/1.1803296
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- Article
Water-Soluble Ferroelectric Crystals with Inhomogeneous Impurity Distribution.
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- Crystallography Reports, 2004, v. 49, n. 2, p. 206, doi. 10.1134/1.1690417
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- Article
Architecture design, performance analysis and VLSI implementation of a reconfigurable shared buffer for high-speed switch/router.
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- International Journal of Communication Systems, 2009, v. 22, n. 2, p. 159, doi. 10.1002/dac.966
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- Article
MÖSSBAUER STUDY OF Mg<sub>0.9</sub>Mn<sub>0.1</sub>Cr<sub>y</sub>Fe<sub>2-y</sub>O<sub>4</sub> SPINEL FERRITES.
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- Modern Physics Letters B, 2006, v. 20, n. 7, p. 365, doi. 10.1142/S0217984906010597
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- Article
A NEW FERROELECTRIC PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> POLYMORPH OF NANOPARTICLES.
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- Modern Physics Letters B, 2006, v. 20, n. 4, p. 159, doi. 10.1142/S021798490600913X
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- Article
The Challenges of Memory Mix Test.
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- EE: Evaluation Engineering, 2004, v. 43, n. 8, p. 20
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- Article
THE CALCULATION OF ABSOLUTE PIEZOOPTIC CONSTANTS OF TGS CRYSTALS WITH L-TREONINE ADMIXTURE.
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- Journal of Physical Studies, 2011, v. 15, n. 2, p. 2703:1, doi. 10.30970/jps.15.2703
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- Article
Shock-induced electrical conductivity in some ferroelectrics.
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- Combustion, Explosion, & Shock Waves, 2010, v. 46, n. 2, p. 231, doi. 10.1007/s10573-010-0034-4
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- Article
67.4L: Late-News Paper: Electrically Suppressed Helix Ferroelectric Liquid Crystals a better Alternative for the IPS Displays.
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- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1001, doi. 10.1002/sdtp.10324
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- Article
Reversible insulator-metal transition of LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface for nonvolatile memory.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02870
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- Article
Quantum Conductance in Silicon Oxide Resistive Memory Devices.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02708
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- Article
Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02319
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- Article
Investigation on the Nonlinear Excitation in an Array of Spin Valve Pillars During the propagation of Electromagnetic Wave.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 6, p. 1823, doi. 10.1007/s10948-011-1130-8
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- Article
Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices.
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- Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 83, doi. 10.1007/s10948-009-0567-5
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- Article
High Performance Interconnection Technology in Avionics.
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- Defence Science Journal, 2011, v. 61, n. 4, p. 354, doi. 10.14429/dsj.61.1085
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- Article
Flexible molecular-scale electronic devices.
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- Nature Nanotechnology, 2012, v. 7, n. 7, p. 438, doi. 10.1038/nnano.2012.81
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- Article
Nanoelectronics: Ferroelectric devices show potential.
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- Nature Nanotechnology, 2012, v. 7, n. 2, p. 83, doi. 10.1038/nnano.2012.10
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- Article
Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch<sup>−2</sup> density.
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- Nature Nanotechnology, 2008, v. 3, n. 7, p. 402, doi. 10.1038/nnano.2008.161
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- Article
Top down bottom up: Collective memory.
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- Nature Nanotechnology, 2007, v. 2, n. 12, p. 739, doi. 10.1038/nnano.2007.395
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- Article
Highly scalable non-volatile and ultra-low-power phase-change nanowire memory.
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- Nature Nanotechnology, 2007, v. 2, n. 10, p. 626, doi. 10.1038/nnano.2007.291
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- Article
Digital memory device based on tobacco mosaic virus conjugated with nanoparticles.
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- Nature Nanotechnology, 2006, v. 1, n. 1, p. 72, doi. 10.1038/nnano.2006.55
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- Article
Solar energy: Ferroelectric photovoltaics.
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- 2010
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- Publication type:
- Opinion
Conditions of steady switching in phase-transition memory cells.
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- Semiconductors, 2015, v. 49, n. 4, p. 498, doi. 10.1134/S1063782615040181
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- Article
Ferroelectrics: Chaotic memory.
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- Nature Physics, 2014, v. 10, n. 1, p. 9, doi. 10.1038/nphys2845
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- Article
Experimental observation of the optical spin transfer torque.
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- Nature Physics, 2012, v. 8, n. 5, p. 411, doi. 10.1038/nphys2279
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- Article