Works matching DE "FERROELECTRIC RAM"

Results: 224

Etching new IC materials for memory devices.

Published in:

Solid State Technology, 1998, v. 41, n. 8, p. 53

By:

DeOrnellas, Stephen P.;
Cofer, Alferd

Publication type:

Article

The TEDS Smart Sensor Revolution.

Published in:

Computing & Control Engineering, 2004, v. 15, n. 4, p. 25, doi. 10.1049/cce:20040409

By:

Wynn, Ryan

Publication type:

Article

'PLASTIC' MEMORY COULD DRAMATICALLY LOWER STORAGE DATA COSTS.

Published in:: Computing & Control Engineering, 2003, v. 14, n. 6, p. 4
Publication type:: Article

Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3446, doi. 10.1002/adfm.201304004

By:

Wen, Guanyin;
Ren, Zhongjie;
Sun, Dianming;
Zhang, Tingjie;
Liu, Lili;
Yan, Shouke

Publication type:

Article

High-Performance Ferroelectric Memory Based on Phase-Separated Films of Polymer Blends.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 10, p. 1372, doi. 10.1002/adfm.201302056

By:

Khan, Mohammad A.;
Bhansali, Unnat S.;
Almadhoun, Mahmoud N.;
Odeh, Ihab N.;
Cha, Dongkyu;
Alshareef, Husam N.

Publication type:

Article

Effect of temperature on the electrical properties of nanocrystalline CaTiFeO perovskite.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 620, doi. 10.1007/s10854-015-3797-2

By:

Mathu, Sridhar Panday;
Nehru, Priya Dharishini;
Murugan, Vinoth;
Arumugam, Karthik;
Sundaramoorthy, Arunmetha;
Venkatachalam, Rajendran

Publication type:

Article

Sol–gel ZnO in organic transistor-based non-volatile memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 2, p. 125, doi. 10.1007/s10854-009-9879-2

By:

Tianyi Wu;
Aw, Kean C.;
Salim, Noviana Tjitra;
Wei Gao

Publication type:

Article

Fabrication and dielectric properties of textured Na0.5Bi0.5TiO3-BaTiO3 ceramics by RTGG method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1228, doi. 10.1007/s10854-007-9547-3

By:

Feng Gao;
Li-Hong Cheng;
Rong-Zi Hong;
Jia-Ji Liu;
Yong-Hong Yao;
Chang-Sheng Tian

Publication type:

Article

Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 111, doi. 10.1007/s10854-007-9516-x

By:

Wosinski, Tadeusz;
Figielski, Tadeusz;
Morawski, Andrzej;
Makosa, Andrzej;
Osinniy, Viktor;
Wrobel, Jerzy;
Sadowski, Janusz

Publication type:

Article

A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers.

Published in:

Polymers for Advanced Technologies, 2008, v. 19, n. 4, p. 281, doi. 10.1002/pat.1006

By:

Yonekuta, Yasunori;
Honda, Kenji;
Nishide, Hiroyuki

Publication type:

Article

First Principles Approach to BaTiO3.

Published in:

Turkish Journal of Physics, 2006, v. 30, n. 4, p. 277

By:

Uludoğan, M.;
Çağin, T.

Publication type:

Article

I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 35, doi. 10.1080/10584587.2012.741390

By:

Mccartney, Crystal Laws;
Mitchell, Cody;
Hunt, Mitchell;
Macleod, Todd C.;
Ho, Fat D.

Publication type:

Article

Retention Analysis of a Non-Volatile Ferroelectric Memory Device.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 23, doi. 10.1080/10584587.2012.741383

By:

John, Caroline S.;
Macleod, Todd C.;
Evans, Joe;
HO, Fat D.

Publication type:

Article

Leakage Current and Dielectric Properties of Integrated Ferroelectric Capacitor Etched in Non-Crystalline Phase.

Published in:

Integrated Ferroelectrics, 2012, v. 132, n. 1, p. 107, doi. 10.1080/10584587.2012.660833

By:

Wang, Longhai;
Tian, Bin;
Zou, Lianying;
Cheng, Hao;
Huang, Danxia;
Dai, Ying;
Yang, Lei

Publication type:

Article

Results from on-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite.

Published in:

Integrated Ferroelectrics, 2012, v. 132, n. 1, p. 88, doi. 10.1080/10584587.2012.660829

By:

MacLeod, Todd C.;
Sims, W. Herb;
Varnavas, Kosta A.;
Ho, Fat D.

Publication type:

Article

Role of Hydrogen Ions in TiO2-Based Memory Devices.

Published in:

Integrated Ferroelectrics, 2011, v. 124, n. 1, p. 112, doi. 10.1080/10584587.2011.573733

By:

Jameson, John R.;
Nishi, Yoshio

Publication type:

Article

Numerical Evidences of Polarization Switching in PMN Type Relaxor Ferroelectrics.

Published in:

Integrated Ferroelectrics, 2011, v. 123, n. 1, p. 32, doi. 10.1080/10584587.2011.570600

By:

Klotins, E.;
Popov, A. I.;
Pankratov, V.;
Shirmane, L.;
Engers, D.

Publication type:

Article

MICRO- AND NANO-STRUCTURES OF NOMINALLY PURE STOICHIOMETRIC LITHIUM NIOBATE SINGLE CRYSTAL IN RAMAN SPECTRA.

Published in:

Integrated Ferroelectrics, 2009, v. 109, n. 1, p. 48, doi. 10.1080/10584580903432460

By:

SIDOROV, N. V.;
YANICHEV, A. A.;
CHUFYREV, P. G.;
PALATNIKOV, M. N.;
MAVRIN, B. N.;
BORMANIS, K.

Publication type:

Article

NITROGEN-RICH TITANIUM NITRIDE SERVING as Pt-Al DIFFUSION BARRIER FOR FeRAM APPLICATION.

Published in:

Integrated Ferroelectrics, 2008, v. 96, n. 1, p. 19, doi. 10.1080/10584580802074025

By:

Kan-Hao Xue;
Tian-Ling Ren;
Dan Xie;
Ze Jia;
Ming-Ming Zhang;
Li-Tian Liu

Publication type:

Article

ELECTRICAL CHARACTERIZATION AND RELIABILITY OF LANTHANUM DOPED PZT THIN FILMS CAPACITORS.

Published in:

Integrated Ferroelectrics, 2008, v. 96, n. 1, p. 75, doi. 10.1080/10584580802100960

By:

Chentir, M. T.;
Bouyssou, E.;
Ventura, L.;
Guégan, G.;
Anceau, C.

Publication type:

Article

EVALUATION OF PZNT FERROELECTRIC CRYSTALS GROWN BY DIFFERENT METHODS.

Published in:

Integrated Ferroelectrics, 2008, v. 96, n. 1, p. 82, doi. 10.1080/10584580802101000

By:

Min Jin;
Jiayue Xu;
Shiji Fan;
Minli Shi

Publication type:

Article

A VISION OF FRAM AS A FUSION MEMORY.

Published in:

Integrated Ferroelectrics, 2008, v. 96, n. 1, p. 100, doi. 10.1080/10584580802101125

By:

Kinam Kim;
Jung, D. J.

Publication type:

Article

ACOUSTO-FERROELECTRIC NONVOLATILE RAM.

Published in:

Integrated Ferroelectrics, 2008, v. 96, n. 1, p. 120, doi. 10.1080/10584580802101299

By:

Krieger, Ju. H.

Publication type:

Article

PERFORMANCE MEASUREMENT OF A MULTI-LEVEL/ANALOG FERROELECTRIC MEMORY DEVICE DESIGN.

Published in:

Integrated Ferroelectrics, 2007, v. 93, n. 1, p. 29, doi. 10.1080/10584580701755682

By:

MacLeod, Todd C.;
Phillips, Thomas A.;
Ho, Fat D.

Publication type:

Article

SESSION B: ALTERNATIVE NON-VOLATILE MEMORY TECHNOLOGIES.

Published in:: Integrated Ferroelectrics, 2007, v. 93, n. 1, p. 73, doi. 10.1080/10584580701756102
Publication type:: Article

EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS.

Published in:

Integrated Ferroelectrics, 2007, v. 93, n. 1, p. 75, doi. 10.1080/10584580701756136

By:

Sung-Min Yoon;
Kyu-Jeong Choi;
Sang-Hee Ko Park;
Seung-Yun Lee;
Young-Sam Park;
Byoung-Gon Yu

Publication type:

Article

TIME DEPENDENT RESISTANCE CHANGE OF AMORPHOUS PHASE IN PHASE-CHANGE NONVOLATILE MEMORIES.

Published in:

Integrated Ferroelectrics, 2007, v. 93, n. 1, p. 83, doi. 10.1080/10584580701756151

By:

Yoon, Sung-Min;
Choi, Kyu-Jeong;
Lee, Nam-Yeal;
Lee, Seung-Yun;
Park, Young-Sam;
Yu, Byoung-Gon;
Park, Tae-Jin;
Choi, Se-Young

Publication type:

Article

Investigation on Resistive Memory Switching Mechanism of NiO.

Published in:

Integrated Ferroelectrics, 2007, v. 93, n. 1, p. 90, doi. 10.1080/10584580701756169

By:

Kim, D. C.;
Seo, S.;
Suh, D.-S.;
Jung, R.;
Lee, C. W.;
Shin, J. K.;
Yoo, I. K.;
Baek, I. G.;
Kim, H. J.;
Yim, E. K.;
Park, S. O.;
Kim, H. S.;
U-In Chung;
Moon, J. T.;
Ryu, B. I.;
Kim, J.-S.;
Park, B. H.

Publication type:

Article

A CELL MODEL FOR NON-VOLATILE RANDOM ACCESS MEMORY AND A SUBSEQUENT METHOD FOR INCREASING DENSITY.

Published in:

Integrated Ferroelectrics, 2007, v. 91, n. 1, p. 1, doi. 10.1080/10584580601077880

By:

Hyeok-Je Jeong;
Keum-Hwan Noh;
Seaung-Suk Lee;
Suk-Kyoung Hong;
Jong-Ho Kang;
Kun-Woo Park

Publication type:

Article

AN INNOVATED PROCESS OF Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt INTEGRATED FERROELECTRIC CAPACITORS FOR FeRAM.

Published in:

Integrated Ferroelectrics, 2007, v. 89, n. 1, p. 3, doi. 10.1080/10584580601077401

By:

Longhai Wang;
Jun Yu;
Xin'Yi Wen;
Yunbo Wang;
Junxiong Gao;
Feng Liu;
Chao-Gang Wei;
Tian-Ling Ren

Publication type:

Article

DESIGN OF A MULTI-LEVEL/ANALOG FERROELECTRIC MEMORY DEVICE.

Published in:

Integrated Ferroelectrics, 2007, v. 89, n. 1, p. 12, doi. 10.1080/10584580601077435

By:

MacLeod, Todd C.;
Phillips, Thomas A.;
Ho, Fat D.

Publication type:

Article

IMPROVEMENT OF ALKOXY-DERIVED HfO2 LAYERS FOR (Y, Yb)MnO3/HfO2/Si STRUCTURES.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 121, doi. 10.1080/10584580601085420

By:

SUZUKI, KAZUYUKI;
GUO, YIPING;
NISHIZAWA, KAORI;
MIKI, TAKESHI;
KATO, KAZUMI

Publication type:

Article

A NEW HIGH-RELIABLE 2T/1C FeRAM CELL.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 149, doi. 10.1080/10584580600660264

By:

Chao-Gang Wei;
Tian-Ling Ren;
Zhi-Gang Zhang;
Dan Xie;
Jun Zhu;
Li-Tian Liu

Publication type:

Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF FERROELECTRIC BI 3.4 PR 0.6 TI 3 O 12 PREPARED BY A SOL-GEL METHOD.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 105, doi. 10.1080/10584580600657971

By:

Won-Jeong Kim;
Sang Kim;
Mun Park;
Tae Ha;
Jun-Ki Chung;
Eun Choi;
Jong Kim;
Gun-Pyo Hong;
Yong Choi

Publication type:

Article

STUDY ON STRESS OF THE FILMS APPLIED TO FeRAM.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 97, doi. 10.1080/10584580600657963

By:

Ze Jia;
Hong Hu;
Dan Xie;
Zhi-Gang Zhang;
Ning-Xin Zhang;
Tian-Ling Ren;
Li-Tian Liu

Publication type:

Article

DEPOSITION OF NANOCRYSTALLINE AND MICROCRYSTALLINE Ba X Sr 1-X TiO 3 BY MEANS OF PULSE MODULATED LOW PRESSURE PLASMA JET SYSTEM.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 227, doi. 10.1080/10584580600685535

By:

Olejníček, J.;
Hubička, Z.;
Virostko, P.;
Deyneka, A.;
Jastrabík, L.;
Chvostová, D.;
Šíchová, H.;
Pokorný, J.

Publication type:

Article

INTEGRATION PROCESSES AND PROPERTIES OF SEMICONDUCTIVE OXIDE MEMORY TRANSISTOR.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 27, doi. 10.1080/10584580600657880

By:

Tingkai Li;
Sheng Hsu;
Ulrich, Bruce;
Evans, Dave

Publication type:

Article

INVESTIGATION OF Sr-Ru-O/Ru MULTILAYER-ELECTRODES PREPARED BY MOCVD.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 249, doi. 10.1080/10584580600660538

By:

Minamidate, Jun;
Nagai, Atsushi;
Kuwabara, Hiroki;
Funakubo, Hiroshi;
June Koo;
Suk Kim;
Youngsoo Park

Publication type:

Article

FERROELECTRIC CHARGE TRANSFER DEVICE USING POLARIZATION-ASSISTED TUNNELING FOR SINGLE TRANSISTOR NONVOLATILE MEMORIES.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 187, doi. 10.1080/10584580600660454

By:

Dalton, D.;
Gnadinger, F.;
Klingensmith, D.;
Olariu, V.;
Kalkur, T.;
Rahman, M.;
Mahmud, A.

Publication type:

Article

A NOVEL SCHEME OF CROSS BITLINES FOR FeRAM ARRAY.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 131, doi. 10.1080/10584580600660173

By:

Ze Jia;
Tian-Ling Ren;
Li-Tian Liu

Publication type:

Article

METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VO x THIN FILMS.

Published in:

Integrated Ferroelectrics, 2006, v. 80, n. 1, p. 181, doi. 10.1080/10584580600657609

By:

Jang Woo Lee;
Ik Hyun Park;
Sung Il Cho;
Choong-Rae Cho;
Chee Won Chung

Publication type:

Article

Ferroelectric Compounds Containing Amino-Acid Groups.

Published in:

Ferroelectrics Letters Section, 2009, v. 36, n. 5/6, p. 129, doi. 10.1080/07315170903446603

By:

GONZALO, JULIOA.;
GUERRA-MENENDEZ, LUCIA

Publication type:

Article

Charge Transport Phenomena in Peptide Molecular Junctions.

Published in:

Research Letters in Nanotechnology, 2008, p. 1, doi. 10.1155/2008/853253

By:

Luchini, Alessandra;
Long, David P.;
Vaisman, Iosif I.;
Petricoin, Emanuel F.;
Geho, David H.;
Liotta, Lance A.

Publication type:

Article

Nonvolatile Bistable Resistive Switching in Polyimide Bearing Trifluoromethyl Film.

Published in:

NANO (1793-2920), 2017, v. 12, n. 5, p. 1750055-1, doi. 10.1142/S1793292017500552

By:

Enming Zhao;
Hui Li;
Fengjuan Miao;
Yanmei Sun

Publication type:

Article

SISTEMA EXPERIMENTAL PARA EL ESTUDIO DE LA HISTÉRESIS FERROEL& 201;CTRICA EN CAPAS DELGADAS.

Published in:

Revista Cubana de Física, 2016, v. 33, n. 1, p. 59

By:

MORENO-CRESPO, C. E.;
PéLAIZ-BARRANCO, A.;
MÉNDEZ-GONZÁLEZ, Y.;
SANTANA-GIL, A.;
CALDERCÓN-PIñAR, F.;
GONZÁLEZ-ABREU, Y.

Publication type:

Article

Instalación para medir el lazo de histéresis y las corrientes de conmutación en láminas delgadas de materiales ferroeléctricos.

Published in:

Revista Cubana de Física, 2009, v. 26, n. 2A, p. 169

By:

Rivero, D.;
Pardo, L.;
Jiménez, R.

Publication type:

Article

Direct drawing of gel fibers enabled by twist-gel spinning process.

Published in:

Polymer Engineering & Science, 2015, v. 55, n. 6, p. 1389, doi. 10.1002/pen.24082

By:

Wyatt, Tom;
Gainey, Teyana;
Fang, Xudong;
Yao, Donggang

Publication type:

Article

A Class of FIFO Queues Arising in Computer Systems.

Published in:

Operations Research, 1978, v. 26, n. 5, p. 864, doi. 10.1287/opre.26.5.864

By:

Coffman Jr., Edward O.;
Hofri, Micha

Publication type:

Article

WASPs with memory.

Published in:

Journal of Cell Biology, 2003, v. 161, n. 6, p. 1008, doi. 10.1083/jcb1616rr2

By:

Wells, William A.

Publication type:

Article

Theoretical Investigation of the Optical Properties of (Ge0.17Se0.83)100-xInx Glass System.

Published in:

IUP Journal of Physics, 2011, v. 4, n. 3, p. 50

By:

Tiwari, Saurabh;
Saxena, Ashish Kumar;
Saxena, Dinesh

Publication type:

Article