Depth Profiles of the Majority Carrier Concentration and the Minority Carrier Effective Lifetime in Gettered GaAs.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 12, p. 1013, doi. 10.1134/1.1432332
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- Publication type:
- Article
Works matching DE "EXCESS carriers (Solid state physics)"
Results: 9
1
2
Measurement of Relaxation Time of Excess Carriers in Si and CIGS Solar Cells by Modulated Electroluminescence Technique.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 2, p. 1, doi. 10.1002/pssa.201700267
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- Publication type:
- Article
3
Front- and rear-side photoluminescence: recombination, depth profiles of excess carriers and optical band gap of Cu(In,Ga)Se<sub>2</sub> in a three-layer system.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 5, p. 1128, doi. 10.1002/pssa.201330351
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- Publication type:
- Article
4
Geminate Recombination in the Presence of Scavengers: The New Vision of the Old Problem.
- Published in:
- Physics Research International, 2011, p. 1, doi. 10.1155/2011/451670
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- Publication type:
- Article
5
Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs.
- Published in:
- Semiconductors, 2002, v. 36, n. 2, p. 167, doi. 10.1134/1.1453431
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- Publication type:
- Article
6
The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors.
- Published in:
- Semiconductors, 2002, v. 36, n. 2, p. 185, doi. 10.1134/1.1453435
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- Publication type:
- Article
7
Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length in Semiconductor-Grade Silicon Ingots.
- Published in:
- Semiconductors, 2001, v. 35, n. 1, p. 40, doi. 10.1134/1.1340287
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- Publication type:
- Article
8
Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1247, doi. 10.1134/1.1187305
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- Publication type:
- Article
9
Comparison of equilibrium and nonequilibrium charge carrier mobilities in polycrystalline synthetic diamond and amorphous diamond-like carbon films.
- Published in:
- Semiconductors, 1997, v. 31, n. 9, p. 980, doi. 10.1134/1.1187146
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- Publication type:
- Article