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The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films.
- Published in:
- Advanced Materials Interfaces, 2024, v. 11, n. 18, p. 1, doi. 10.1002/admi.202400091
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- Article
Effect of substrate orientation on the structures and properties of BiFe<sub>0.91</sub>Zr<sub>0.09</sub>O<sub>3</sub> thin films.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 18, p. 1, doi. 10.1007/s10854-024-13003-7
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- Article
Near‐Unity Quantum Yield ZnSeTe Quantum Dots Enabled by Controlling Shell Growth for Efficient Deep‐Blue Light‐Emitting Diodes.
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- Advanced Functional Materials, 2024, v. 34, n. 24, p. 1, doi. 10.1002/adfm.202313811
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- Article
Atomic Layer Deposition of Epitaxial Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Functional Materials, 2024, v. 34, n. 24, p. 1, doi. 10.1002/adfm.202314396
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- Article
Improving Epitaxial Growth of γ‐Al<sub>2</sub>O<sub>3</sub> Films via Sc<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> Oxide Buffers.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 12, p. 1, doi. 10.1002/pssa.202400228
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- Article
Wavelength Tuning in Resonant Cavity Interband Cascade Light Emitting Diodes (RCICLEDs) via Post Growth Cavity Length Adjustment.
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- Sensors (14248220), 2024, v. 24, n. 12, p. 3843, doi. 10.3390/s24123843
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- Article
RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite.
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- C, 2024, v. 10, n. 2, p. 36, doi. 10.3390/c10020036
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- Article
Hydrothermal Growth and Orientation of LaFeO 3 Epitaxial Films.
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- Materials (1996-1944), 2024, v. 17, n. 11, p. 2758, doi. 10.3390/ma17112758
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- Article
Epitaxial Tantalum‐Doped β‐Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 6, p. 1, doi. 10.1002/pssr.202400023
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- Article
Ultrathin Template Approach to Synthesize High‐Entropy Intermetallic Nanoparticles for Hydrogen Evolution Reaction.
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- Small Structures, 2024, v. 5, n. 6, p. 1, doi. 10.1002/sstr.202300537
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- Article
Stress Prerelease‐Driven Dendrite‐Free Growth Mechanism to Stabilize Zn Anodes.
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- Advanced Energy Materials, 2024, v. 14, n. 20, p. 1, doi. 10.1002/aenm.202304204
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- Article
Remote epitaxy of single-crystal rhombohedral WS<sub>2</sub> bilayers.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-48522-8
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- Article
Controlled epitaxy and patterned growth of one-dimensional crystals via surface treatment of two-dimensional templates.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00473-w
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- Article
Effect of "ColdArc" WAAM Regime and Arc Torch Weaving on Microstructure and Properties of As-Built and Subtransus Quenched Ti-6Al-4V.
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- Materials (1996-1944), 2024, v. 17, n. 10, p. 2325, doi. 10.3390/ma17102325
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- Article
Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study.
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- Materials (1996-1944), 2024, v. 17, n. 10, p. 2448, doi. 10.3390/ma17102448
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- Article
On a singular epitaxial thin-film growth equation involving logarithmic nonlinearity.
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- Mathematical Methods in the Applied Sciences, 2024, v. 47, n. 7, p. 5699, doi. 10.1002/mma.9887
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- Article
Direct Selective Epitaxy of 2D Sb 2 Te 3 onto Monolayer WS 2 for Vertical p–n Heterojunction Photodetectors.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 10, p. 884, doi. 10.3390/nano14100884
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- Article
Author Correction: Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.
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- 2024
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- Correction Notice
Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.
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- Nature Communications, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22784-y
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- Article
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
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- Crystals (2073-4352), 2024, v. 14, n. 5, p. 414, doi. 10.3390/cryst14050414
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- Article
Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs) 4 (GaAs) 3 /Be-Doped InAlAs Quantum Wells for THz Applications.
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- Crystals (2073-4352), 2024, v. 14, n. 5, p. 421, doi. 10.3390/cryst14050421
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- Article
Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method.
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- Journal of Materials Science, 2024, v. 59, n. 17, p. 7318, doi. 10.1007/s10853-024-09613-5
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- Article
Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC.
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- Micromachines, 2024, v. 15, n. 5, p. 600, doi. 10.3390/mi15050600
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- Article
One-step calcination synthesis of interface-coherent crystallized and surface-passivated LiNi<sub>0.5</sub>Mn<sub>1.5</sub>O<sub>4</sub> for high-voltage lithium-ion battery.
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- Nano Research, 2024, v. 17, n. 5, p. 4192, doi. 10.1007/s12274-023-6361-z
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- Article
Towards growth of pure AB-stacked bilayer graphene single crystals.
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- Nano Research, 2024, v. 17, n. 5, p. 4616, doi. 10.1007/s12274-023-6348-9
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- Article
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300806
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- Article
Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300677
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- Article
Integrated 2D multi-fin field-effect transistors.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-47974-2
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- Article
Encounter between Gyroid and Lamellae in Janus Colloidal Particles Self‐Assembled by a Rod–Coil Block Copolymer.
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- Macromolecular Rapid Communications, 2024, v. 45, n. 8, p. 1, doi. 10.1002/marc.202300696
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- Article
Controlling structure and interfacial interaction of monolayer TaSe<sub>2</sub> on bilayer graphene.
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- Nano Convergence, 2024, v. 11, p. 1, doi. 10.1186/s40580-024-00422-9
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- Article
Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 732, doi. 10.3390/nano14080732
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- Article
Ir‐Doped CuPd Single‐Crystalline Mesoporous Nanotetrahedrons for Ethylene Glycol Oxidation Electrocatalysis: Enhanced Selective Cleavage of C−C Bond.
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- Angewandte Chemie, 2024, v. 136, n. 15, p. 1, doi. 10.1002/ange.202400281
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- Article
Unveiling the Ultrafast Electron Transfer Dynamics in Epitaxial Dodecahedron CsPbBr<sub>3</sub>/Au Heterostructure.
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- ChemPhotoChem, 2024, v. 8, n. 4, p. 1, doi. 10.1002/cptc.202300242
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- Article
Study on Epitaxial Growth of High‐Quality InSb Materials.
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- Crystal Research & Technology, 2024, v. 59, n. 4, p. 1, doi. 10.1002/crat.202300297
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- Article
Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.
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- Crystals (2073-4352), 2024, v. 14, n. 4, p. 371, doi. 10.3390/cryst14040371
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- Article
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate.
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- Materials (1996-1944), 2024, v. 17, n. 7, p. 1587, doi. 10.3390/ma17071587
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- Article
Epitaxial growth of borophene on graphene surface towards efficient and broadband photodetector.
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- Nano Research, 2024, v. 17, n. 4, p. 3053, doi. 10.1007/s12274-023-6109-9
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- Article
Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride.
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- Nano Research, 2024, v. 17, n. 4, p. 3224, doi. 10.1007/s12274-023-6171-3
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- Article
Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers.
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- Physica Status Solidi (B), 2024, v. 261, n. 4, p. 1, doi. 10.1002/pssb.202300535
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- Article
High‐Temperature Annealing of Si‐Doped AlGaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 7, p. 1, doi. 10.1002/pssa.202300897
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- Article
Optimizing SiGe-on-annealed DPSi Heterostructures Using Raman Spectroscopy and Genetic Algorithm for Enhanced Material Characterization and Performance.
- Published in:
- Przeglad Elektrotechniczny, 2024, v. 2024, n. 4, p. 165, doi. 10.15199/48.2024.04.31
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- Article
Technologie und Chancen von Micro-LED-Displays.
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- Elektronik Industrie, 2024, p. 61
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- Article
Bi‐Oriented Step Guided Nucleation and Epitaxy of Twist Bilayer Graphene with Precisely Controlled Twist Angle.
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- Advanced Functional Materials, 2024, v. 34, n. 12, p. 1, doi. 10.1002/adfm.202310346
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- Article
The Stability Prediction and Epitaxial Growth of Boron Nitride Nanodots on Different Substrates.
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- Molecules, 2024, v. 29, n. 6, p. 1313, doi. 10.3390/molecules29061313
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- Article
Epitaxial growth and high critical current density of BHO-doped YBCO/STO composite films.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 8, p. 1, doi. 10.1007/s10854-024-12312-1
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- Article
Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides.
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- Advanced Functional Materials, 2024, v. 34, n. 10, p. 1, doi. 10.1002/adfm.202311387
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- Article
Epitaxial Growth of 1D Te/2D MoSe<sub>2</sub> Mixed‐Dimensional Heterostructures for High‐Efficient Self‐Powered Photodetector.
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- Advanced Functional Materials, 2024, v. 34, n. 10, p. 1, doi. 10.1002/adfm.202311134
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- Article
The Grain Size Evolution Mechanism of A517Q Alloy Steel Fabricated by Laser and Wire Additive Manufacturing Assisted with Different Ultrasonic Vibration Treatments.
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- Advanced Engineering Materials, 2024, v. 26, n. 5, p. 1, doi. 10.1002/adem.202301498
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- Article
Structural and surface characterizations of 2D β-In<sub>2</sub>Se<sub>3</sub>/3D β-Ga<sub>2</sub>O<sub>3</sub> heterostructures grown on c-Sapphire substrates by molecular beam epitaxy.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55830-y
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- Article
Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns.
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- Journal of Materials Science, 2024, v. 59, n. 7, p. 2974, doi. 10.1007/s10853-024-09392-z
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- Article