Works matching DE "EPITAXY"

Results: 3205

Unlocking the Facet‐Governed Zn Homoepitaxy Growth Induced by Dynamic l‐Theanine Evolution Process Realized Highly Reversible Zn Anodes.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 20, p. 1, doi. 10.1002/adfm.202421220

By:

Sun, Chaorui;
Ji, Chenchen;
Guo, Gaozhi;
He, Gege;
Luo, Yulu;
Lin, Jiadong;
Yan, Huijie;
Li, Mengjun;
Shi, Yulin;
Sun, Lixian

Publication type:

Article

Bandgap of Epitaxial Single-Crystal BiFe 1−x Mn x O 3 Films Grown Directly on SrTiO 3 /Si(001).

Published in:

Materials (1996-1944), 2025, v. 18, n. 9, p. 2022, doi. 10.3390/ma18092022

By:

Cantrell, Samuel R.;
Miracle, John T.;
Cottier, Ryan J.;
Lindsey, Skyler;
Theodoropoulou, Nikoleta

Publication type:

Article

Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4350, doi. 10.1007/s11664-025-11882-y

By:

Dishman, Haley E.;
Meilander, Owen R.;
Ebrish, Mona A.

Publication type:

Article

Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4291, doi. 10.1007/s11664-024-11673-x

By:

Hardy, Matthew T.;
Lang, Andrew C.;
Hart, James L.;
Jin, Eric N.;
Nepal, Neeraj;
Gokhale, Vikrant J.;
Downey, Brian P.;
Katzer, D. Scott;
Litwin, Peter M.;
Sales, Maria Gabriela;
Growden, Tyler A.;
Wheeler, Virginia D.

Publication type:

Article

Comparison Between Epitaxial and Implanted Aluminum-Doped 4H-SiC.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4287, doi. 10.1007/s11664-024-11645-1

By:

Das, Suman;
Lichtenwalner, Daniel J.;
Stein, Shane;
Park, Jae;
Steinmann, Philipp;
Ryu, Sei-Hyung

Publication type:

Article

On the time-optimal control problem associated with the epitaxial growth of thin film.

Published in:

Uzbek Mathematical Journal, 2024, v. 68, n. 4, p. 37, doi. 10.29229/uzmj.2024-4-4

By:

F. N., Dekhkonov

Publication type:

Article

Phase Selective Growth of Monolayer 1T′ Phase MoTe2 with Ferroelectricity via Liquid Droplet Precursors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400394

By:

Niu, Chenyang;
Li, Cheng;
Zhou, Xilong;
Fan, Xiulian;
Guo, Xuehao;
Chen, Huanzhi;
Peng, Zheng;
Zhou, Yu

Publication type:

Article

Fine control of low-temperature CVD epitaxial growth.

Published in:

Solid State Technology, 2001, v. 44, n. 7, p. 91

By:

Loup, Virginie;
Hartmann, Jean-Michel;
Semeria, Marie-Noelle;
Samoilov, Arkadii V.;
Washington, Lori

Publication type:

Article

Epitaxial wafer market.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 60

By:

Royalty, Robert

Publication type:

Article

Emergence of atomic layer processes.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 70

By:

Raaijmakers, Ivo

Publication type:

Article

Accurate metrology of epi pattern shift.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 187

By:

Cheang, Peter;
Best, Keith

Publication type:

Article

Measurement of carrier lifetime: Monitoring epitaxy quality.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 143

By:

Renaud, Philippe;
Walker, Ariel

Publication type:

Article

Effects of expitaxial crystallization on adhesive strength in impact-toughened isotactic...

Published in:

Polymer Engineering & Science, 1998, v. 38, n. 3, p. 478, doi. 10.1002/pen.10210

By:

Kestenbach, Hans-Jurgen;
Loos, Joachim;
Petermann, Jürgen

Publication type:

Article

Growth of three-dimensional graphene layers using plasma enhanced CVD.

Published in:

Surface Engineering, 2015, v. 31, n. 2, p. 140, doi. 10.1179/1743294414Y.0000000362

By:

Qu, B.;
Huang, M.-L.;
Wu, Q.-H.

Publication type:

Article

Effect of cyclic indentation on epitaxial GaN films.

Published in:

Surface Engineering, 2012, v. 28, n. 3, p. 176, doi. 10.1179/1743294411Y.0000000057

By:

Tsai, C-H;
Yau, W-H

Publication type:

Article

AFM study of morphological development of zinc electrodeposits.

Published in:

Surface Engineering, 2007, v. 23, n. 4, p. 300, doi. 10.1179/174329407X215320

By:

Raeissi, K.;
Saatchi, A.;
Golozar, M. A.;
Szpunar, J. A.

Publication type:

Article

Monitoring Stress in Thin Films During Processing.

Published in:

Surface Engineering, 2003, v. 19, n. 5, p. 387, doi. 10.1179/026708403225010118

By:

Chason, E.;
Sheldon, B. W.

Publication type:

Article

An Efficient Bifunctional Core‐Shell ZIF‐90@ZIF‐67 Composite as a Stable Pickering Interfacial Catalyst for the Deacetalization–Knoevenagel Tandem Reaction.

Published in:

Chemistry - A European Journal, 2025, v. 31, n. 3, p. 1, doi. 10.1002/chem.202403363

By:

Liu, Wei;
Zhang, Yu‐Qing;
Dong, Zhen‐Lin;
Chen, Zi‐Xuan;
Li, Lei;
Zhao, Xin‐Yuan;
Wu, Yang;
Zhang, Yu‐Yang

Publication type:

Article

Spatially Resolved Multicolor Luminescence Tuning on the Single 1D Heterogeneous Microrod.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 47, p. 1, doi. 10.1002/chem.202401755

By:

Lu, Changyuan;
You, Wenwu

Publication type:

Article

Enantiomer-Specific Oriented Attachment: Formation of Macroscopic Homochiral Crystal Aggregates from a Racemic System.

Published in:

Angewandte Chemie, 2013, v. 125, n. 40, p. 10739, doi. 10.1002/ange.201303915

By:

Viedma, Cristóbal;
McBride, J. Michael;
Kahr, Bart;
Cintas, Pedro

Publication type:

Article

Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 19, p. n/a, doi. 10.1002/adfm.201603884

By:

Chen, Kun;
Wan, Xi;
Xu, Jianbin

Publication type:

Article

Electronic and Optical Properties of a Semiconducting Spinel (Fe2CrO4).

Published in:

Advanced Functional Materials, 2017, v. 27, n. 9, p. n/a, doi. 10.1002/adfm.201605040

By:

Chambers, Scott A.;
Droubay, Timothy C.;
Kaspar, Tiffany C.;
Nayyar, Iffat H.;
McBriarty, Martin E.;
Heald, Steve M.;
Keavney, David J.;
Bowden, Mark E.;
Sushko, Peter V.

Publication type:

Article

Epitaxy of Layered Orthorhombic SnS-SnS xSe(1−x) Core-Shell Heterostructures with Anisotropic Photoresponse.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 26, p. 4673, doi. 10.1002/adfm.201600699

By:

Xia, Jing;
Zhu, Dandan;
Li, Xuanze;
Wang, Lei;
Tian, Lifeng;
Li, Jing;
Wang, Jingyuan;
Huang, Xing;
Meng, Xiang‐Min

Publication type:

Article

Etching-Free Epitaxial Growth of Gold on Silver Nanostructures for High Chemical Stability and Plasmonic Activity.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5435, doi. 10.1002/adfm.201502366

By:

Liu, Hongpo;
Liu, Tingzhuo;
Zhang, Lei;
Han, Lu;
Gao, Chuanbo;
Yin, Yadong

Publication type:

Article

Core/Shell Nanostructures: Etching-Free Epitaxial Growth of Gold on Silver Nanostructures for High Chemical Stability and Plasmonic Activity (Adv. Funct. Mater. 34/2015).

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5568, doi. 10.1002/adfm.201502366

By:

Liu, Hongpo;
Liu, Tingzhuo;
Zhang, Lei;
Han, Lu;
Gao, Chuanbo;
Yin, Yadong

Publication type:

Article

Epitaxy on Demand.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 32, p. 5140, doi. 10.1002/adfm.201501483

By:

Nijland, Maarten;
Thomas, Sean;
Smithers, Mark A.;
Banerjee, Nirupam;
Blank, Dave H. A.;
Rijnders, Guus;
Xia, Jing;
Koster, Gertjan;
ten Elshof, Johan E.

Publication type:

Article

Soft Graphoepitaxy for Large Area Directed Self-Assembly of Polystyrene- block-Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 22, p. 3425, doi. 10.1002/adfm.201500100

By:

Borah, Dipu;
Rasappa, Sozaraj;
Salaun, Mathieu;
Zellsman, Marc;
Lorret, Olivier;
Liontos, George;
Ntetsikas, Konstantinos;
Avgeropoulos, Apostolos;
Morris, Michael A.

Publication type:

Article

Epitaxial Growth of PbSe Quantum Dots on MoS2 Nanosheets and their Near-Infrared Photoresponse.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 37, p. 5798, doi. 10.1002/adfm.201400330

By:

Schornbaum, Julia;
Winter, Benjamin;
Schießl, Stefan P.;
Gannott, Florentina;
Katsukis, Georgios;
Guldi, Dirk M.;
Spiecker, Erdmann;
Zaumseil, Jana

Publication type:

Article

Water-Induced Phase Separation Forming Macrostructured Epitaxial Quartz Films on Silicon.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 35, p. 5494, doi. 10.1002/adfm.201401066

By:

Drisko, Glenna L.;
Carretero‐Genevrier, Adrian;
Gich, Martí;
Gàzquez, Jaume;
Ferrah, Djawhar;
Grosso, David;
Boissière, Cédric;
Rodriguez‐Carvajal, Juan;
Sanchez, Clément

Publication type:

Article

Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 28, p. 4492, doi. 10.1002/adfm.201304062

By:

Bayram, Can;
Ott, John A.;
Shiu, Kuen‐Ting;
Cheng, Cheng‐Wei;
Zhu, Yu;
Kim, Jeehwan;
Razeghi, Manijeh;
Sadana, Devendra K.

Publication type:

Article

Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 4, p. 530, doi. 10.1002/adfm.201302032

By:

Wu, Jiang;
Hirono, Yusuke;
Li, Xinlei;
Wang, Zhiming M.;
Lee, Jihoon;
Benamara, Mourad;
Luo, Siyuan;
Mazur, Yuriy I.;
Kim, Eun Soo;
Salamo, Gregory J.

Publication type:

Article

Tailoring the multiferroic properties in Ba0.85Ca0.15Zr0.1Ti0.9O3/La0.7Sr0.3MnO3 bilayer heterostructures using residual strain.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 21, p. 26049, doi. 10.1007/s10854-021-06012-3

By:

Hu, Mingzhe;
Su, Rong;
Wang, Chuanbin

Publication type:

Article

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25507, doi. 10.1007/s10854-021-07016-9

By:

Simsek, Irem;
Yolcu, Gamze;
Koçak, MerveNur;
Pürlü, Kağan;
Altuntas, Ismail;
Demir, Ilkay

Publication type:

Article

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6425, doi. 10.1007/s10854-021-05360-4

By:

Du, Yong;
Xu, Buqing;
Wang, Guilei;
Gu, Shihai;
Li, Ben;
Kong, Zhenzhen;
Yu, Jiahan;
Bai, Guobin;
Li, Junjie;
Wang, Wenwu;
Radamson, Henry H.

Publication type:

Article

All chemical solution deposition of epitaxial porous BiFe0.93Mn0.07O3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17404, doi. 10.1007/s10854-020-04296-5

By:

Zhang, Li;
Yang, Bingbing;
Deng, Yan;
Zhao, Chengbing;
Yu, Jiangying;
Huang, Kai;
Li, Ping;
Xu, Jinrong;
Zhang, Min;
Zhu, Xuebin

Publication type:

Article

Carrier–phonon interaction of GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16338, doi. 10.1007/s10854-020-04183-z

By:

Yeo, Inah;
Kim, Jong Su;
Song, Jin Dong;
Han, Il Ki

Publication type:

Article

Role of hydrogen in modifying a-Si:H/c-Si interface passivation and band alignment for rear-emitter silicon heterojunction solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9468, doi. 10.1007/s10854-020-03486-5

By:

Wu, Zhuopeng;
Zhang, Liping;
Liu, Wenzhu;
Chen, Renfang;
Li, Zhenfei;
Meng, Fanying;
Liu, Zhengxin

Publication type:

Article

Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7455, doi. 10.1007/s10854-020-02966-y

By:

Marín-García, C. A.;
Cerón, J. S. Arias;
Sánchez-R, V. M.

Publication type:

Article

Structure, morphology and photocatalytic performance of BiVO4 nanoislands covered with ITO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 9, p. 7035, doi. 10.1007/s10854-020-03269-y

By:

Yu, Qiaonan;
Zhang, Feng;
Li, Guoqiang

Publication type:

Article

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5854, doi. 10.1007/s10854-019-02661-7

By:

Zhao, Zhiqian;
Cheng, Xiaohong;
Li, Yongliang;
Zan, Ying;
Liu, Haoyan;
Wang, Guilei;
Du, Anyan;
Li, Junjie;
Zhang, Qingzhu;
Xu, Gaobo;
Ma, Xueli;
Wang, Xiaolei;
Yang, Hong;
Xu, Jing;
Luo, Jun;
Li, JunFeng;
Yin, Huaxiang;
Wang, Wenwu

Publication type:

Article

Investigation of epitaxial growth of La2Zr2O7 thin films with different carbonaceous phases.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5573, doi. 10.1007/s10854-020-03122-2

By:

Wang, Yao;
Feng, Jianqing;
Jin, Lihua;
Li, Chengshan;
Gao, Ling

Publication type:

Article

Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS).

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 26, doi. 10.1007/s10854-018-00661-7

By:

Wang, Guilei;
Kolahdouz, M.;
Luo, Jun;
Qin, Changliang;
Gu, Shihai;
Kong, Zhenzhen;
Yin, Xiaogen;
Xiong, Wenjuan;
Zhao, Xuewei;
Liu, Jinbiao;
Yang, Tao;
Li, Junfeng;
Yin, Huaxiang;
Zhu, Huilong;
Wang, Wenwu;
Zhao, Chao;
Ye, Tianchun;
Radamson, Henry H.

Publication type:

Article

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16216, doi. 10.1007/s10854-019-01990-x

By:

Ściana, B.;
Radziewicz, D.;
Dawidowski, W.;
Bielak, K.;
Szyszka, A.;
Kopaczek, J.

Publication type:

Article

Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 9751, doi. 10.1007/s10854-019-01310-3

By:

Jia, Shasha;
Li, Xiaomin;
Li, Guanjie;
Xie, Sijie;
Chen, Yongbo

Publication type:

Article

Enhanced SAW characteristics of <italic>a</italic>-plane AlN epitaxial films using ZnO buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3912, doi. 10.1007/s10854-017-8330-3

By:

Fu, Sulei;
Li, Qi;
Wang, Minjuan;
Song, Cheng;
Zeng, Fei;
Pan, Feng

Publication type:

Article

Self-ordered nanostructures on patterned substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 2, p. 952, doi. 10.1007/s10854-017-7993-0

By:

Pelucchi, Emanuele;
Moroni, Stefano T.;
Dimastrodonato, Valeria;
Vvedensky, Dimitri D.

Publication type:

Article

Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 15217, doi. 10.1007/s10854-017-7399-z

By:

Liang, Zongwen;
Zhang, Xiong;
Dai, Qian;
Luan, Huakai;
Zhao, Jianguo;
Wu, Zili;
Hu, Guohua;
Cui, Yiping

Publication type:

Article

Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 16, p. 11950, doi. 10.1007/s10854-017-7004-5

By:

Mullins, J.;
Dierre, F.;
Halliday, D.;
Tanner, B.;
Radley, I.;
Kang, Z.;
Summers, C.

Publication type:

Article

Progress in bulk cadmium mercury telluride over the last 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4380, doi. 10.1007/s10854-015-2939-x

By:

Capper, P.

Publication type:

Article

Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z

By:

Radamson, Henry;
Kolahdouz, Mohammadreza

Publication type:

Article