Works matching DE "EPITAXIAL layers"
Results: 619
β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 312, doi. 10.16553/j.cnki.issn1000-985x.2024.0284
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- Article
Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer.
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- Photonics, 2025, v. 12, n. 2, p. 152, doi. 10.3390/photonics12020152
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- Article
Epitaxial Nickel Ferrocyanide Stabilizes Jahn–Teller Distortions of Manganese Ferrocyanide for Sodium‐Ion Batteries.
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- Angewandte Chemie, 2021, v. 133, n. 34, p. 18667, doi. 10.1002/ange.202106240
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- Article
Stability and Electronic Characteristics of Epitaxial Silicene Multilayers on Ag(111).
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- Advanced Functional Materials, 2015, p. 4083, doi. 10.1002/adfm.201501029
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- Article
A Three Component Self-Assembled Epitaxial Nanocomposite Thin Film.
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- Advanced Functional Materials, 2015, v. 25, n. 20, p. 3091, doi. 10.1002/adfm.201500332
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- Article
From Chiral Islands to Smectic Layers: A Computational Journey Across Sexithiophene Morphologies on C<sub>60</sub>.
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- Advanced Functional Materials, 2015, v. 25, n. 13, p. 1985, doi. 10.1002/adfm.201402609
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- Article
Low Temperature Stabilization of Nanoscale Epitaxial Spinel Ferrite Thin Films by Atomic Layer Deposition.
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- Advanced Functional Materials, 2014, v. 24, n. 34, p. 5368, doi. 10.1002/adfm.201400517
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- Article
Evolution of optical phonons in epitaxial Ge<sub>1−y</sub>Sn<sub>y</sub> structures.
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- Journal of Raman Spectroscopy, 2020, v. 51, n. 11, p. 2305, doi. 10.1002/jrs.5986
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- Article
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis.
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- Journal of Raman Spectroscopy, 2020, v. 51, n. 6, p. 989, doi. 10.1002/jrs.5860
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- Article
Raman spectroscopic investigations of epitaxial BiFeO<sub>3</sub> thin films on rare earth scandate substrates.
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- Journal of Raman Spectroscopy, 2015, v. 46, n. 12, p. 1245, doi. 10.1002/jrs.4762
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- Article
Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03878-6
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- Article
Demonstration of MOCVD-grown Ga<sub>2</sub>O<sub>3</sub> power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03858-w
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- Article
Soft-punch-through buffer concept for 600-1200 V IGBTs.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0124
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- Article
Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm.
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- IET Optoelectronics (Wiley-Blackwell), 2024, v. 18, n. 5, p. 140, doi. 10.1049/ote2.12125
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- Article
Structure and magnetic properties of epitaxial CaFe2O4 thin films.
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- NPJ Quantum Materials, 2020, v. 5, n. 1, p. 1, doi. 10.1038/s41535-020-0236-2
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- Article
Real-space observation of charge ordering in epitaxial La<sub>2−x</sub>Sr<sub>x</sub>CuO<sub>4</sub> films.
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- NPJ Quantum Materials, 2019, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41535-019-0156-1
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- Article
Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam.
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- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-021-00250-z
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- Article
Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface.
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- Progress in Photovoltaics, 2014, v. 22, n. 11, p. 1118, doi. 10.1002/pip.2336
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- Article
Strain-enhanced high Q-factor GaN micro-electromechanical resonator.
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- Science & Technology of Advanced Materials, 2020, v. 21, n. 1, p. 515, doi. 10.1080/14686996.2020.1792257
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- Article
Thermoelectric La-doped SrTiO<sub>3</sub> epitaxial layers with single-crystal quality: from nano to micrometers.
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- Science & Technology of Advanced Materials, 2017, v. 18, n. 1, p. 430, doi. 10.1080/14686996.2017.1336055
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- Article
Ambience-sensitive optical refraction in ferroelectric nanofilms of NaNbO3.
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- Science & Technology of Advanced Materials, 2014, v. 15, n. 4, p. 1, doi. 10.1088/1468-6996/15/4/045001
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- Article
Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3 thin films on silicon in relation to grain tilt.
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- Science & Technology of Advanced Materials, 2013, v. 14, n. 4, p. 045006, doi. 10.1088/1468-6996/14/4/045006
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- Article
Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.
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- Science & Technology of Advanced Materials, 2012, v. 13, n. 1, p. 1, doi. 10.1088/1468-6996/13/1/013002
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- Article
Highly Efficient Full‐Color Inorganic LEDs on a Single Wafer by Using Multiple Adhesive Bonding.
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- Advanced Materials Interfaces, 2021, v. 8, n. 14, p. 1, doi. 10.1002/admi.202100300
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- Article
Stacking Relations and Substrate Interaction of Graphene on Copper Foil.
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- Advanced Materials Interfaces, 2021, v. 8, n. 7, p. 1, doi. 10.1002/admi.202002025
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- Article
Electrochemical Epitaxial Grown PbS Nanorods Array on Graphene Film for High‐Performance Photodetector.
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- Advanced Materials Interfaces, 2021, v. 8, n. 1, p. 1, doi. 10.1002/admi.202001464
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- Article
Pulsed Laser Deposition Assisted van der Waals Epitaxial Large Area Quasi‐2D ZnO Single‐Crystal Plates on Fluorophlogopite Mica.
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- Advanced Materials Interfaces, 2019, v. 6, n. 20, p. N.PAG, doi. 10.1002/admi.201901156
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- Article
In Situ Synchrotron X‐Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma‐Enhanced Atomic Layer Deposition.
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- Advanced Materials Interfaces, 2018, v. 5, n. 24, p. N.PAG, doi. 10.1002/admi.201800957
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- Article
Superconducting Interfaces: Octahedral Distortions at High-Temperature Superconducting La<sub>2</sub>CuO<sub>4</sub> Interfaces: Visualizing Jahn-Teller Effects (Adv. Mater. Interfaces 24/2017).
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- Advanced Materials Interfaces, 2017, v. 4, n. 24, p. n/a, doi. 10.1002/admi.201770128
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- Article
In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions.
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- Advanced Materials Interfaces, 2017, v. 4, n. 21, p. n/a, doi. 10.1002/admi.201601118
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- Article
Interfacial Area between Hetero-Epitaxial γ-Al<sub>2</sub>O<sub>3</sub> and Silicon.
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- Advanced Materials Interfaces, 2017, v. 4, n. 17, p. n/a, doi. 10.1002/admi.201700259
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- Article
Disentangling Epitaxial Growth Mechanisms of Solution Derived Functional Oxide Thin Films.
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- Advanced Materials Interfaces, 2016, v. 3, n. 18, p. n/a, doi. 10.1002/admi.201600392
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- Article
Tuning the Surface Electrochemistry by Strained Epitaxial Pt Thin Film Model Electrodes Prepared by Pulsed Laser Deposition.
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- Advanced Materials Interfaces, 2016, v. 3, n. 16, p. n/a, doi. 10.1002/admi.201600222
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- Article
Misfit Dislocation Guided Topographic and Conduction Patterning in Complex Oxide Epitaxial Thin Films.
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- Advanced Materials Interfaces, 2016, v. 3, n. 14, p. n/a, doi. 10.1002/admi.201600106
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- Article
Oxygen Disorder, a Way to Accommodate Large Epitaxial Strains in Oxides.
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- Advanced Materials Interfaces, 2015, v. 2, n. 18, p. n/a, doi. 10.1002/admi.201500344
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- Article
Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells.
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- Journal of Experimental & Theoretical Physics, 2018, v. 127, n. 6, p. 1125, doi. 10.1134/S1063776118100035
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- Article
Spin-filter tunneling in superconducting mesa structures with a ferromagnetic manganite interlayer.
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- Journal of Experimental & Theoretical Physics, 2017, v. 124, n. 4, p. 628, doi. 10.1134/S1063776117030062
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- Article
Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.
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- Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-024-83398-0
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- Article
Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.
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- 2024
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- Correction Notice
A Chitosan–Agarose Polysaccharide-Based Hydrogel for Biomimetic Remineralization of Dental Enamel.
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- Biomolecules (2218-273X), 2021, v. 11, n. 8, p. 1137, doi. 10.3390/biom11081137
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- Article
Surface Nanostructure of Layers from Water Solutions after Sedimentation.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04012
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- Article
Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain.
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- Coatings (2079-6412), 2021, v. 11, n. 6, p. 654, doi. 10.3390/coatings11060654
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- Article
Achieving Good Protection on Ultra-High Molecular Weight Polythene by In Situ Growth of Amorphous Carbon Film.
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- Coatings (2079-6412), 2021, v. 11, n. 5, p. 584, doi. 10.3390/coatings11050584
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- Article
Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates.
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- EPJ Photovoltaics, 2020, v. 11, p. 1, doi. 10.1051/epjpv/2020002
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- Article
High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes.
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- Advances in Optical Technologies, 2012, p. 1, doi. 10.1155/2012/754546
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- Article
High-resolution X-ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation.
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- XRS: X-ray Spectrometry, 2015, v. 44, n. 5, p. 363, doi. 10.1002/xrs.2641
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- Article
Shortcomings of CVD modeling of SiC today.
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- Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2013, v. 132, n. 11, p. 1, doi. 10.1007/s00214-013-1398-9
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- Article
Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain.
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- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 1, p. 41, doi. 10.1049/mnl.2019.0167
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- Article
Effect of high-temperature AlN buffer on anisotropy of semi-polar (11-22) GaN with two pressure growth stages.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 9, p. 972, doi. 10.1049/mnl.2018.5669
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- Article
Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field.
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- Communications Physics, 2024, v. 7, n. 1, p. 1, doi. 10.1038/s42005-023-01515-3
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- Publication type:
- Article