Works matching DE "EPITAXIAL layers"

Results: 630

Epitaxy of Radial High-Energy-Facetted Ultrathin TiO2 Nanosheets onto Nanowires for Enhanced Photoreactivities.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 10, p. 1580, doi. 10.1002/adfm.201504850

By:

Lin, Haifeng;
Wang, Xun

Publication type:

Article

Stability and Electronic Characteristics of Epitaxial Silicene Multilayers on Ag(111).

Published in:

Advanced Functional Materials, 2015, p. 4083, doi. 10.1002/adfm.201501029

By:

Johnson, Neil W.;
Moewes, Alexander;
Muir, David;
Kurmaev, Ernst Z.

Publication type:

Article

A Three Component Self-Assembled Epitaxial Nanocomposite Thin Film.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 3091, doi. 10.1002/adfm.201500332

By:

Kim, Dong Hun;
Sun, Xue Yin;
Aimon, Nicolas M.;
Kim, Jae Jin;
Campion, Michael J.;
Tuller, Harry L.;
Kornblum, Lior;
Walker, Fred J.;
Ahn, Charles H.;
Ross, Caroline A.

Publication type:

Article

From Chiral Islands to Smectic Layers: A Computational Journey Across Sexithiophene Morphologies on C60.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 13, p. 1985, doi. 10.1002/adfm.201402609

By:

D'Avino, Gabriele;
Muccioli, Luca;
Zannoni, Claudio

Publication type:

Article

Low Temperature Stabilization of Nanoscale Epitaxial Spinel Ferrite Thin Films by Atomic Layer Deposition.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 34, p. 5368, doi. 10.1002/adfm.201400517

By:

Coll, Mariona;
Montero Moreno, Josep M.;
Gazquez, Jaume;
Nielsch, Kornelius;
Obradors, Xavier;
Puig, Teresa

Publication type:

Article

Strain engineering using La0.7Sr0.3MnO3 buffer layer for enhancing superconductivity in GdBa2Cu3O7−x films.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 15272, doi. 10.1007/s10854-022-08453-w

By:

Oh, Jun-Yung;
Ko, Young-Jae;
Yang, Dong-Seok;
Jeong, Wanseop;
Kang, Byeongwon

Publication type:

Article

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25507, doi. 10.1007/s10854-021-07016-9

By:

Simsek, Irem;
Yolcu, Gamze;
Koçak, MerveNur;
Pürlü, Kağan;
Altuntas, Ismail;
Demir, Ilkay

Publication type:

Article

Effect of ZnS and PbS shell on mem-behavior of CdS quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7049, doi. 10.1007/s10854-021-05415-6

By:

Das, Hirendra;
Xu, Qiang;
Datta, Pranayee

Publication type:

Article

Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7455, doi. 10.1007/s10854-020-02966-y

By:

Marín-García, C. A.;
Cerón, J. S. Arias;
Sánchez-R, V. M.

Publication type:

Article

Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 6255, doi. 10.1007/s10854-020-03180-6

By:

Das, Subhasis;
Sharma, Akant Sagar;
Bakshi, Sayantan;
Dhar, S.

Publication type:

Article

A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 15, p. 14130, doi. 10.1007/s10854-019-01779-y

By:

Zhao, Zhiqian;
Li, Yongliang;
Wang, Guilei;
Du, Anyan;
Gu, Shihai;
Li, Yan;
Zhang, Qingzhu;
Xu, Gaobo;
Ma, Xueli;
Wang, Xiaolei;
Yang, Hong;
Luo, Jun;
Li, JunFeng;
Yin, Huaxiang;
Wang, Wenwu

Publication type:

Article

High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 5180, doi. 10.1007/s10854-017-8483-0

By:

Zhang, Fusheng;
Chen, Xiufang;
Qin, Xiao;
Xu, Xiangang;
Zhao, Xian;
Zuo, Zhiyuan

Publication type:

Article

The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5

By:

Cui, Shuang;
Zhang, Yuantao;
Huang, Zhen;
Deng, Gaoqiang;
Li, Baozhu;
Chang, Yuchun;
Zhao, Degang

Publication type:

Article

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10003, doi. 10.1007/s10854-016-5071-7

By:

Huang, Zhen;
Zhang, Yuantao;
Deng, Gaoqiang;
Li, Baozhu;
Cui, Shuang;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng;
Zhang, Baolin;
Du, Guotong

Publication type:

Article

Rietveld analysis of CaCuTiO thin films obtained by RF-sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2175, doi. 10.1007/s10854-015-4084-y

By:

Foschini, C.;
Tararam, R.;
Simões, A.;
Rocha, L.;
Santos, C.;
Longo, E.;
Varela, J.

Publication type:

Article

Influence of top contact noble metals on leakage current properties of epitaxial BaTiO film capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9962, doi. 10.1007/s10854-015-3674-z

By:

Zhang, Wei;
Ouyang, Jun;
Kang, Limin;
Cheng, Hongbo;
Yang, Qian;
Hu, Fangren

Publication type:

Article

Drift region optimization by double epitaxial layer in low and medium power rated silicon power MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6692, doi. 10.1007/s10854-015-3271-1

By:

Sandeep, S.;
Komaragiri, Rama

Publication type:

Article

Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 950, doi. 10.1007/s10854-014-2487-9

By:

Yang, Hongquan;
Zhang, Xiong;
Wang, Shuchang;
Zhu, Min;
Cui, Yiping;
Dai, Ning

Publication type:

Article

Enhanced internal gettering in n/n epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3486, doi. 10.1007/s10854-014-2043-7

By:

Dong, Peng;
Liang, Xingbo;
Tian, Daxi;
Zhao, Jianjiang;
Gao, Chao;
Ma, Xiangyang;
Yang, Deren

Publication type:

Article

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4

By:

Arslan, Engin;
Ozturk, Mustafa;
Çakmak, Huseyin;
Demirel, Pakize;
Özçelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

On prognosis of mismatch-induced stress during growth of films in the framework of magnetron sputtering.

Published in:

International Journal of Advanced Manufacturing Technology, 2024, v. 135, n. 7/8, p. 3673, doi. 10.1007/s00170-024-14695-1

By:

Pankratov, Evgeny Leonidovich

Publication type:

Article

Large‐Area Lead Monolayers under Cover: Intercalation, Doping, and Phase Transformation.

Published in:

Small Structures, 2025, v. 6, n. 1, p. 1, doi. 10.1002/sstr.202400338

By:

Schölzel, Franziska;
Richter, Peter;
Unigarro, Andres David Peña;
Wolff, Susanne;
Schwarz, Holger;
Schütze, Adrian;
Rösch, Niels;
Gemming, Sibylle;
Seyller, Thomas;
Schädlich, Philip

Publication type:

Article

Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge.

Published in:

Optics & Spectroscopy, 2024, v. 132, n. 4, p. 403, doi. 10.1134/S0030400X24040143

By:

Shvets, V. A.;
Marin, D. V.;
Yakushev, M. V.;
Rykhiitskii, S. V.

Publication type:

Article

Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer.

Published in:

Photonics, 2025, v. 12, n. 2, p. 152, doi. 10.3390/photonics12020152

By:

Zong, Jiawei;
Shi, Yating;
Qian, Guang;
Wang, Jinpeng;
Wei, Zelu;
Kong, Yuechan;
Zhang, Jingwen;
Chen, Tangsheng

Publication type:

Article

Perspectives on UVC LED: Its Progress and Application.

Published in:

Photonics, 2021, v. 8, n. 6, p. 196, doi. 10.3390/photonics8060196

By:

Hsu, Tsung-Chi;
Teng, Yu-Tsai;
Yeh, Yen-Wei;
Fan, Xiaotong;
Chu, Kuo-Hsiung;
Lin, Su-Hui;
Yeh, Kuo-Kuang;
Lee, Po-Tsung;
Lin, Yue;
Chen, Zhong;
Wu, Tingzhu;
Kuo, Hao-Chung

Publication type:

Article

Study of Phase Transition in MOCVD Grown Ga 2 O 3 from κ to β Phase by Ex Situ and In Situ Annealing.

Published in:

Photonics, 2021, v. 8, n. 1, p. 17, doi. 10.3390/photonics8010017

By:

Lee, Junhee;
Kim, Honghyuk;
Gautam, Lakshay;
He, Kun;
Hu, Xiaobing;
Dravid, Vinayak P.;
Razeghi, Manijeh

Publication type:

Article

Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers.

Published in:

Photonics, 2019, v. 6, n. 1, p. 6, doi. 10.3390/photonics6010006

By:

Stanton, Eric J.;
Spott, Alexander;
Peters, Jon;
Davenport, Michael L.;
Malik, Aditya;
Volet, Nicolas;
Liu, Junqian;
Merritt, Charles D.;
Vurgaftman, Igor;
Kim, Chul Soo;
Meyer, Jerry R.;
Bowers, John E.

Publication type:

Article

Effect of Die Shape and Size on Performance of III-Nitride Micro-LEDs: A Modeling Study.

Published in:

Photonics, 2018, v. 5, n. 4, p. 41, doi. 10.3390/photonics5040041

By:

Bulashevich, Kirill A.;
Konoplev, Sergey S.;
Karpov, Sergey Yu.

Publication type:

Article

Growth mechanism of Al2O3 on surface of ZrO2 inclusions: experimental and first principles investigation.

Published in:

Metallurgical Research & Technology, 2024, v. 121, n. 5, p. 1, doi. 10.1051/metal/2024067

By:

Li, Xiang;
Bao, Yanping;
Wang, Jun;
Li, Yutang;
Wang, Linzhu

Publication type:

Article

On the origin of the ultraviolet photoluminescence in the Ce3+-doped epitaxial films of multicomponent (Lu,Gd)3(Ga,Al)5O12 garnets.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 4, p. n/a, doi. 10.1002/pssb.201600570

By:

Babin, V.;
Chernenko, K.;
Hanus, M.;
Krasnikov, A.;
Kučera, M.;
Nikl, M.;
Zazubovich, S.

Publication type:

Article

GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1127, doi. 10.1002/pssb.201451507

By:

Minamikawa, Daichi;
Ino, Masataka;
Kawai, Shunsuke;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iwaya, Motoaki;
Akasaki, Isamu

Publication type:

Article

Development of epitaxial Al xSc1− xN for artificially structured metal/semiconductor superlattice metamaterials.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 2, p. 251, doi. 10.1002/pssb.201451314

By:

Saha, Bivas;
Saber, Sammy;
Naik, Gururaj V.;
Boltasseva, Alexandra;
Stach, Eric A.;
Kvam, Eric P.;
Sands, Timothy D.

Publication type:

Article

Application of external tensile and compressive strain on a single layer In As/ Ga As quantum dot via epitaxial lift-off.

Published in:

Physica Status Solidi (B), 2013, v. 250, n. 8, p. 1632, doi. 10.1002/pssb.201248573

By:

Omambac, K. M.;
Porquez, J. G.;
Afalla, J.;
Vasquez, D.;
Balgos, M. H. M.;
Jaculbia, R.;
Somintac, A. S.;
Salvador, A. A.

Publication type:

Article

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43702-w

By:

Yastrubchak, Oksana;
Tataryn, Nataliia;
Gluba, Lukasz;
Mamykin, Sergii;
Sadowski, Janusz;
Andrearczyk, Tomasz;
Domagala, Jaroslaw Z.;
Kondratenko, Olga;
Romanyuk, Volodymyr;
Fedchenko, Olena;
Lytvynenko, Yaryna;
Tkach, Olena;
Vasilyev, Dmitry;
Babenkov, Sergey;
Medjanik, Katerina;
Gas, Katarzyna;
Sawicki, Maciej;
Wosinski, Tadeusz;
Schönhense, Gerd;
Elmers, Hans-Joachim

Publication type:

Article

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41678-1

By:

Cao, Weicheng;
Song, Chunyan;
Liao, Hui;
Yang, Ningxuan;
Wang, Rui;
Tang, Guanghui;
Ji, Hongyu

Publication type:

Article

Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy.

Published in:

Philosophical Magazine Letters, 2016, v. 96, n. 4, p. 148, doi. 10.1080/09500839.2016.1181279

By:

Chang, Yunjie;
Wang, Yumei;
Deng, Zhen;
Chen, Hong;
Ge, Binghui

Publication type:

Article

Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process.

Published in:

Advances in Condensed Matter Physics, 2019, p. 1, doi. 10.1155/2019/2096854

By:

Xue, Xiaohuan;
Song, Jianjun;
Xuan, Rongxi

Publication type:

Article

Critical Layer Thickness for Epitaxial FAPbBrxI3-x on KCl (001).

Published in:

International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400055

By:

Parent, Elisa;
Raphael, Johanna;
Kujofsa, Tedi;
Ayers, J. E.

Publication type:

Article

Process Induced Stress Optimization for Compressively Stressed p-Channel FinFET at 7N.

Published in:

International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S012915642140005X

By:

Jena, J.;
Dash, T. P.;
Mohapatra, E.;
Das, S.;
Nanda, J.

Publication type:

Article

CADEM: calculate X-ray diffraction of epitaxial multilayers.

Published in:

Journal of Applied Crystallography, 2017, v. 50, n. 1, p. 288, doi. 10.1107/S1600576716018379

By:

Komar, Paulina;
Jakob, Gerhard

Publication type:

Article

A compact high-resolution X-ray powder diffractometer.

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 6, p. 1626, doi. 10.1107/S0021889813027313

By:

Fewster, Paul F.;
Trout, David R. D.

Publication type:

Article

Obtaining the structure factors for an epitaxial film using Cu X-ray radiation.

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 6, p. 1749, doi. 10.1107/S002188981302414X

By:

Wadley, P.;
Crespi, A.;
Gázquez, J.;
Roldán, M.A.;
García, P.;
Novak, V.;
Campion, R.;
Jungwirth, T.;
Rinaldi, C.;
Martí, X.;
Holy, V.;
Frontera, C.;
Rius, J.

Publication type:

Article

Three-wave X-ray diffraction in distorted epitaxial structures.

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 4, p. 861, doi. 10.1107/S0021889813011709

By:

Kyutt, Reginald;
Scheglov, Mikhail

Publication type:

Article

Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures.

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 4, p. 919, doi. 10.1107/S0021889813006171

By:

Zhylik, A.;
Benediktovitch, A.;
Feranchuk, I.;
Inaba, K.;
Mikhalychev, A.;
Ulyanenkov, A.

Publication type:

Article

About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors.

Published in:

International Journal of Multiphysics, 2015, v. 9, n. 2, p. 109, doi. 10.1260/1750-9548.9.2.109

By:

Pankratov, E. L.;
Bulaeva, E. A.

Publication type:

Article

Overcoming the Interfacial Lattice Mismatch: Geometry Control of Gold-Nickel Bimetallic Heteronanostructures.

Published in:

Particle & Particle Systems Characterization, 2018, v. 35, n. 5, p. 1, doi. 10.1002/ppsc.201700361

By:

Li, Guangfang Grace;
Blom, Douglas A.;
Pandey, Shubham;
Koch, Robert J.;
Misture, Scott T.;
Phillpot, Simon R.;
Wang, Hui

Publication type:

Article

Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO system.

Published in:

Journal of Solid State Electrochemistry, 2017, v. 21, n. 3, p. 657, doi. 10.1007/s10008-016-3400-7

By:

Chundak, Mykhailo;
Yoshitake, Michiko;
Vaclavu, Michal;
Matolin, Vladimir;
Chikyow, Toyohiro

Publication type:

Article

Photoelectric Characteristics of SiC/Si Heterostructures.

Published in:

Journal of Applied Spectroscopy, 2023, v. 90, n. 5, p. 1064, doi. 10.1007/s10812-023-01633-4

By:

Lobanok, M. V.;
Polonskii, N. V.;
Gaiduk, P. I.

Publication type:

Article

Welcoming Remarks for the 50th Anniversary of DGKK.

Published in:: Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900137
Publication type:: Article

Impact of the ridge etching‐depth on GaSb‐based laser diodes.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 4, p. 162, doi. 10.1049/ell2.12392

By:

Monge‐Bartolome, Laura;
Cerutti, Laurent;
Tournié, Eric

Publication type:

Article