Works matching DE "EPITAXIAL layers"

Results: 634

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400854

By:

Lee, Taeeun;
Jung, Yusup;
Park, Jun Young;
Kim, Sujin;
Kyoung, Sinsu;
Woo, Sola

Publication type:

Article

Research Progress and Prospect of the Bulk Single Crystal Growth of β‐Ga2O3: from 1964 to 2024.

Published in:

Crystal Research & Technology, 2025, v. 60, n. 6, p. 1, doi. 10.1002/crat.202400255

By:

Wang, Xueyi;
Chang, Xi;
Wang, Ping;
Yang, Xiaotian;
Yuan, Long

Publication type:

Article

Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 5, p. 477, doi. 10.3390/cryst15050477

By:

Le, Ba-Phuoc;
Chen, Jyh-Chen;
Hu, Chieh;
Lin, Wei-Jie;
Tu, Chun-Chin;
Chen, Liang-Chin

Publication type:

Article

The Influence of AlGaN Spacer Thickness on the Electrical Properties of InAlN/AlGaN/AlN/GaN Heterostructure: The Influence of AlGaN Spacer Thickness on the Electrical Properties of InAlN/AlGaN/AlN/GaN...: J. Xu et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2315, doi. 10.1007/s11664-024-11620-w

By:

Xu, Jiankai;
Jiang, Lijuan;
Feng, Chun;
Xiao, Hongling

Publication type:

Article

Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0

By:

Li, Huan;
Bai, Zhiyuan;
Yang, Lian

Publication type:

Article

A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 15, p. 14130, doi. 10.1007/s10854-019-01779-y

By:

Zhao, Zhiqian;
Li, Yongliang;
Wang, Guilei;
Du, Anyan;
Gu, Shihai;
Li, Yan;
Zhang, Qingzhu;
Xu, Gaobo;
Ma, Xueli;
Wang, Xiaolei;
Yang, Hong;
Luo, Jun;
Li, JunFeng;
Yin, Huaxiang;
Wang, Wenwu

Publication type:

Article

High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 5180, doi. 10.1007/s10854-017-8483-0

By:

Zhang, Fusheng;
Chen, Xiufang;
Qin, Xiao;
Xu, Xiangang;
Zhao, Xian;
Zuo, Zhiyuan

Publication type:

Article

The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 6008, doi. 10.1007/s10854-016-6276-5

By:

Cui, Shuang;
Zhang, Yuantao;
Huang, Zhen;
Deng, Gaoqiang;
Li, Baozhu;
Chang, Yuchun;
Zhao, Degang

Publication type:

Article

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10003, doi. 10.1007/s10854-016-5071-7

By:

Huang, Zhen;
Zhang, Yuantao;
Deng, Gaoqiang;
Li, Baozhu;
Cui, Shuang;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng;
Zhang, Baolin;
Du, Guotong

Publication type:

Article

Rietveld analysis of CaCuTiO thin films obtained by RF-sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2175, doi. 10.1007/s10854-015-4084-y

By:

Foschini, C.;
Tararam, R.;
Simões, A.;
Rocha, L.;
Santos, C.;
Longo, E.;
Varela, J.

Publication type:

Article

Influence of top contact noble metals on leakage current properties of epitaxial BaTiO film capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9962, doi. 10.1007/s10854-015-3674-z

By:

Zhang, Wei;
Ouyang, Jun;
Kang, Limin;
Cheng, Hongbo;
Yang, Qian;
Hu, Fangren

Publication type:

Article

Drift region optimization by double epitaxial layer in low and medium power rated silicon power MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6692, doi. 10.1007/s10854-015-3271-1

By:

Sandeep, S.;
Komaragiri, Rama

Publication type:

Article

Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 950, doi. 10.1007/s10854-014-2487-9

By:

Yang, Hongquan;
Zhang, Xiong;
Wang, Shuchang;
Zhu, Min;
Cui, Yiping;
Dai, Ning

Publication type:

Article

Enhanced internal gettering in n/n epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3486, doi. 10.1007/s10854-014-2043-7

By:

Dong, Peng;
Liang, Xingbo;
Tian, Daxi;
Zhao, Jianjiang;
Gao, Chao;
Ma, Xiangyang;
Yang, Deren

Publication type:

Article

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4

By:

Arslan, Engin;
Ozturk, Mustafa;
Çakmak, Huseyin;
Demirel, Pakize;
Özçelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO system.

Published in:

Journal of Solid State Electrochemistry, 2017, v. 21, n. 3, p. 657, doi. 10.1007/s10008-016-3400-7

By:

Chundak, Mykhailo;
Yoshitake, Michiko;
Vaclavu, Michal;
Matolin, Vladimir;
Chikyow, Toyohiro

Publication type:

Article

Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser.

Published in:

Inorganic Materials, 2017, v. 53, n. 9, p. 891, doi. 10.1134/S0020168517090138

By:

Marmalyuk, A.;
Padalitsa, A.;
Ladugin, M.;
Gorlachuk, P.;
Yarotskaya, I.;
Andreev, A.;
Bagaev, T.;
Lobintsov, A.;
Kurnyavko, Yu.;
Sapozhnikov, S.;
Danilov, A.;
Telegin, K.;
Simakov, V.;
Zasavitskii, I.;
Zarubin, S.

Publication type:

Article

Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition.

Published in:

Inorganic Materials, 2016, v. 52, n. 12, p. 1210, doi. 10.1134/S0020168516120037

By:

Chilyasov, A.;
Moiseev, A.;
Evstigneev, V.;
Stepanov, B.;
Drozdov, M.

Publication type:

Article

Position sensitivity characteristics of n-CdSe epitaxial layers grown on mica crystals in a quasi-closed system.

Published in:

Inorganic Materials, 2016, v. 52, n. 8, p. 762, doi. 10.1134/S002016851608015X

By:

Senokosov, E.;
Chukita, V.;
Khamidullin, R.;
Cheban, V.;
Odin, I.;
Chukichev, M.

Publication type:

Article

Indirect Evaluation of the Electrocaloric Effect in PbZrTiO 3 (20/80)-Based Epitaxial Thin Film Structures.

Published in:

Electronic Materials, 2022, v. 3, n. 4, p. 344, doi. 10.3390/electronicmat3040028

By:

Boni, Georgia A.;
Filip, Lucian D.;
Radu, Cristian;
Chirila, Cristina;
Pasuk, Iuliana;
Botea, Mihaela;
Pintilie, Ioana;
Pintilie, Lucian

Publication type:

Article

Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector.

Published in:

Electronic Materials, 2022, v. 3, n. 4, p. 357, doi. 10.3390/electronicmat3040029

By:

Vashishtha, Pargam;
Prajapat, Pukhraj;
Goswami, Lalit;
Yadav, Aditya;
Pandey, Akhilesh;
Gupta, Govind

Publication type:

Article

Lead-Free BiFeO 3 Thin Film: Ferroelectric and Pyroelectric Properties.

Published in:

Electronic Materials, 2022, v. 3, n. 2, p. 173, doi. 10.3390/electronicmat3020015

By:

Botea, Mihaela;
Chirila, Cristina;
Boni, Georgia Andra;
Pasuk, Iuliana;
Trupina, Lucian;
Pintilie, Ioana;
Hrib, Luminiţa Mirela;
Nicu, Becherescu;
Pintilie, Lucian

Publication type:

Article

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 1, p. 41, doi. 10.1049/mnl.2019.0167

By:

Chakraborty, Debraj;
Maity, Biswajit;
Mukherjee, Moumita

Publication type:

Article

Effect of high-temperature AlN buffer on anisotropy of semi-polar (11-22) GaN with two pressure growth stages.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 9, p. 972, doi. 10.1049/mnl.2018.5669

By:

Jun Han;
Fengfeng Shi;
Yanhui Xing;
Peiyuan Wan;
Zhiyuan Gao;
Xiaoling Hu;
Tao Li;
Shiwei Cao;
Yao Zhang

Publication type:

Article

Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800504

By:

Min, Taewon;
Kong, Hyeonjun;
Lee, Joonhyuk;
Lee, Jaekwang;
Jeen, Hyoungjeen;
Kim, Gowoon;
Zhang, Yu‐Qiao;
Ohta, Hiromichi;
Suh, Hoyoung;
Jang, Jae Hyuck;
Jeon, Tae‐Yeol;
Lee, Inwon;
Cho, Jinhyung

Publication type:

Article

Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO3 Films.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 12, p. n/a, doi. 10.1002/aelm.201700332

By:

Xu, Changsong;
Xiang, Hongjun;
Bellaiche, Laurent

Publication type:

Article

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra.

Published in:

Technical Physics Letters, 2024, v. 50, n. 2, p. 171, doi. 10.1134/S1063785023180013

By:

Afanasjev, A. V.;
Zubkov, V. I.;
Ilyin, V. A.;
Luchinin, V. V.;
Pavlova, M. V.;
Panov, M. F.;
Trushliakova, V. V.;
Firsov, D. D.

Publication type:

Article

Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer.

Published in:

Photonics, 2025, v. 12, n. 2, p. 152, doi. 10.3390/photonics12020152

By:

Zong, Jiawei;
Shi, Yating;
Qian, Guang;
Wang, Jinpeng;
Wei, Zelu;
Kong, Yuechan;
Zhang, Jingwen;
Chen, Tangsheng

Publication type:

Article

Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization.

Published in:

Journal of Asian Ceramic Societies, 2019, v. 7, n. 3, p. 312, doi. 10.1080/21870764.2019.1631995

By:

Tu, Rong;
Hu, Zhiying;
Xu, Qingfang;
Li, Lin;
Yang, Meijun;
Li, Qizhong;
Shi, Ji;
Li, Haiwen;
Zhang, Song;
Zhang, Lianmeng;
Goto, Takashi;
Ohmori, Hitoshi;
Kosinova, Marina;
Basu, Bikramjit

Publication type:

Article

Local polarization switching in epitaxial thin films of ferroelectric (Bi1/2Na1/2)TiO3.

Published in:

Journal of Asian Ceramic Societies, 2015, v. 3, n. 2, p. 160, doi. 10.1016/j.jascer.2014.12.005

By:

Kitanaka, Yuuki;
Matsuo, Hiroki;
Noguchi, Yuji;
Miyayama, Masaru

Publication type:

Article

Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth.

Published in:

Nanomaterials (2079-4991), 2015, v. 5, n. 3, p. 1532, doi. 10.3390/nano5031532

By:

Xingfang Liu;
Yu Chen;
Changzheng Sun;
Min Guan;
Yang Zhang;
Feng Zhang;
Guosheng Sun;
Yiping Zeng

Publication type:

Article

Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates.

Published in:

Applied Nanoscience, 2018, v. 8, n. 4, p. 891, doi. 10.1007/s13204-018-0727-7

By:

Özden, Selin;
Koc, Mumin Mehmet

Publication type:

Article

The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900290

By:

Niehle, Michael;
Rodriguez, Jean-Baptiste;
Cerutti, Laurent;
Tournié, Eric;
Trampert, Achim

Publication type:

Article

Role of ZrO2 Passivation Layer Thickness in the Fabrication of High-Responsivity GaN Ultraviolet Photodetectors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900265

By:

Chatterjee, Abhishek;
Khamari, Shailesh K.;
Porwal, Sanjay;
Sharma, Tarun Kumar

Publication type:

Article

Effect of Misfit Strains on the Skyrmion Crystal Phase in Epitaxial Thin Films of Helimagnets.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 10, p. N.PAG, doi. 10.1002/pssr.201800247

By:

Hu, Yangfan

Publication type:

Article

Effects of Epitaxial Strain on Antiferrodistortion of AgNbO3 from First‐Principle Calculations.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 4, p. 1, doi. 10.1002/pssr.201800007

By:

Zhu, Linguang;
Wang, Xiangjian;
Lou, Xiaojie

Publication type:

Article

Diode laser annealing on sputtered epitaxial Cu2ZnSnS4 thin films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 5, p. n/a, doi. 10.1002/pssr.201700033

By:

Song, Ning;
Huang, Jialiang;
Green, Martin A.;
Hao, Xiaojing

Publication type:

Article

Radio frequency magnetron sputtered epitaxial Cu2ZnSnS4 thin film on ZnS(100).

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 5, p. 404, doi. 10.1002/pssr.201409169

By:

Song, Ning;
Li, Wei;
Hao, Xiaojing;
Huang, Yidan;
Green, Martin A.

Publication type:

Article

Synthesis and characterization of arc deposited magnetic (Cr,Mn)2AlC MAX phase films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 5, p. 420, doi. 10.1002/pssr.201409087

By:

Mockute, Aurelija;
Persson, Per O. Å.;
Magnus, Fridrik;
Ingason, Arni Sigurdur;
Olafsson, Sveinn;
Hultman, Lars;
Rosen, Johanna

Publication type:

Article

Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process.

Published in:

Advances in Condensed Matter Physics, 2019, p. 1, doi. 10.1155/2019/2096854

By:

Xue, Xiaohuan;
Song, Jianjun;
Xuan, Rongxi

Publication type:

Article

Analysis of GaN-based HEMTS with AlN buffer layers by using Raman spectroscopy.

Published in:

Modern Physics Letters B, 2021, v. 35, n. 29, p. 1, doi. 10.1142/S0217984921410104

By:

Lee, Cheng Che;
Lee, Hsin Jung;
Lee, Hsin Che;
Lee, Wei Yu;
Chuang, Wei Ching

Publication type:

Article

Fabrication of the electric double layer transistor with (La,Pr,Ca)MnO3 nanowall wire channel.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 34-36, p. N.PAG, doi. 10.1142/S0217984918400584

By:

Hattori, Azusa N.;
Nakazawa, Hisoka;
Nakamura, Takuro;
Tanaka, Hidekazu

Publication type:

Article

Effect of magnetic structural processing on structure and texture of La2Zr2O7 buffer layers.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 32/33, p. -1, doi. 10.1142/S0217984916503905

By:

Chibirova, F. Kh.;
Kotina, G. V.;
Bovina, E. A.;
Tarasova, D. V.;
Polisan, A. A.;
Parkhomenko, Yu. N.

Publication type:

Article

Raman spectroscopy of epitaxial topological insulator Bi2Te3 thin films on substrates.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 15, p. 1, doi. 10.1142/S021798491550075X

By:

Xu, Hao;
Song, Yuxin;
Gong, Qian;
Pan, Wenwu;
Wu, Xiaoyan;
Wang, Shumin

Publication type:

Article

Structural and physical properties of Ba0.6Sr0.4TiO3 film prepared by pulsed laser deposition in a mixture of argon and oxygen.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 15, p. 1, doi. 10.1142/S0217984915500797

By:

Lou, J. Z.;
Fang, X. Y.;
Wang, S. J.;
Dai, X. H.;
Jia, C. J.;
Zhang, L.;
Jia, Y. L.;
Wang, Y. L.;
Ma, L. X.;
Liu, B. T.

Publication type:

Article

Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations.

Published in:

International Journal of Thermodynamics, 2022, v. 25, n. 3, p. 41, doi. 10.5541/ijot.1102511

By:

Razzokov, A. Sh.;
Eshchanov, Kh. O.

Publication type:

Article

Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution.

Published in:

International Journal of Thermodynamics, 2022, v. 25, n. 2, p. 1, doi. 10.5541/ijot.988667

By:

Shonazarovich, Alijon Razzokov;
Odilbekovich, Khushnudbek Eshchanov

Publication type:

Article

Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144564

By:

Boguski, Jacek;
Wróbel, Jarosław;
Złotnik, Sebastian;
Budner, Bogusław;
Liszewska, Malwina;
Kubiszyn, Łukasz;
Michałowski, Paweł P.;
Ciura, Łukasz;
Moszczyński, Paweł;
Odrzywolski, Sebastian;
Jankiewicz, Bartłomiej;
Wróbel, Jerzy

Publication type:

Article

Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144568

By:

Lubyshev, Dmitri;
Fastenau, Joel M.;
Kattner, Michael;
Frey, Philip;
Nelson, Scott A.;
Flick, Ryan;
Ying Wu;
Liu, Amy W. K.;
Szymanski, Dennis E.;
Martinez, Becky;
Furlong, Mark J.;
Dennis, Richard;
Bundas, Jason;
Sundaram, Mani

Publication type:

Article

Effects of Deposition Temperature on the Structural and Physical Properties of Ba(Fe1.8Co0.2)2As2 Thin Film.

Published in:

Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 4, p. 869, doi. 10.1007/s10948-018-4800-y

By:

Liang, J. T.;
Song, J. M.;
Zhao, L.;
Guo, J. X.;
Liu, B. T.;
Dai, X. H.;
Zhao, H. D.;
Wang, Y.

Publication type:

Article