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Electro-optic effect in GaN/Al<sub>0.15</sub>Ga<sub>0.85</sub>N single quantum wells for optical switch.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 321, doi. 10.15407/spqeo13.03.321
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- Article
Confined LO phonon limited free carrier absorption in quantum well wires.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 12, doi. 10.15407/spqeo9.04.012
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- Article
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As superlattice.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 18
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- Article
Structural changes in multilayer systems containing In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> quantum wells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 479
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- Article
Many particle and bandstructure effects in intersubband quantum well optics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 316, doi. 10.15407/spqeo6.03.316
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- Article
Resonance Raman scattering by intersubband plasmonphonon excitations in InAs/A1Sb structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 287, doi. 10.15407/spqeo6.03.287
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- Article
Tailoring of Electronic Structure and Thermoelectric Properties of a Topological Crystalline Insulator by Chemical Doping.
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- Angewandte Chemie, 2015, v. 127, n. 50, p. 15456, doi. 10.1002/ange.201508492
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- Article
Effect of grain-boundary behavior on the dc electric conduction in Rb-doped CaCuTiO.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 3, p. 1063, doi. 10.1007/s10854-012-0881-8
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- Article
Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 2, p. 807, doi. 10.1007/s10854-012-0818-2
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- Article
Investigation on deep level defects in rapid thermal annealed undoped n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3
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- Article
Dimensional effects observed for the electrical, dielectrical and optical properties of TiO<sub>2</sub> DC magnetron thin films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 117, doi. 10.1007/s10854-008-9644-y
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- Article
LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 425, doi. 10.1007/s10854-008-9661-x
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- Article
Surface second harmonic generation of Se–Te–Sb films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 164, doi. 10.1007/s10854-007-9498-8
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Semiconductor quantum-wires and nano-wires for optoelectronic applications.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 94, doi. 10.1007/s10854-007-9456-5
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- Article
Pure-blue tandem OLEDs based on terfluorenes compounds.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1202, doi. 10.1007/s10854-007-9528-6
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- Article
Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6
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- Article
Low thermal drift in highly sensitive doped channel Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As micro-Hall element.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 776, doi. 10.1007/s10854-007-9408-0
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Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 569, doi. 10.1007/s10854-007-9391-5
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- Article
Influence of Cu<sup>2+</sup> ions on structural and magnetic properties of NiZn ferrites.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1183, doi. 10.1007/s10854-007-9347-9
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- Article
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1191, doi. 10.1007/s10854-007-9318-1
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- Article
Temperature dependence of absorption edge in MOCVD grown GaN.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1229, doi. 10.1007/s10854-007-9295-4
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- Article
Comparison of various organic stabilizers as capping agents for CdS nanoparticles synthesis.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1109, doi. 10.1007/s10854-007-9139-2
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Optical properties and structural correlations of GeAsSe chalcogenide glasses.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 389, doi. 10.1007/s10854-007-9235-3
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High transmittance–low resistivity cadmium oxide films grown by reactive pulsed laser deposition.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 10, p. 1027, doi. 10.1007/s10854-007-9129-4
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- Article
Strain effect and carrier density in modulation-doped Al<sub>x</sub>Ga<sub>1 - x</sub>As/In<sub>y</sub>Ga<sub>1 - y</sub>As/GaAs step quantum wells with an embedded potential barrier.
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- Journal of Materials Science Letters, 2003, v. 22, n. 23, p. 1685, doi. 10.1023/B:JMSL.0000004649.07035.c7
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- Article
Enhancement of electronic conductivity of LiAl<sub>0.3</sub>Co<sub>0.7</sub>O<sub>2</sub> via Mg doping.
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- Journal of Materials Science Letters, 2003, v. 22, n. 17, p. 1183, doi. 10.1023/A:1025312932161
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- Article
Krylov-Bogoliubov-Mitropolsky averaging used to construct effective Hamiltonians in the theory of strongly correlated electron systems.
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- Theoretical & Mathematical Physics, 2009, v. 161, n. 2, p. 1567, doi. 10.1007/s11232-009-0143-y
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- Article
A diagram approach to the strong coupling in the single-impurity Anderson model.
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- Theoretical & Mathematical Physics, 2008, v. 155, n. 3, p. 914, doi. 10.1007/s11232-008-0077-9
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- Article
Microscopic theory of superconductivity in MgB<sub>2</sub>-type systems in a magnetic field: A neighborhood of H <sub> c2</sub>.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 94, doi. 10.1007/s11232-008-0009-8
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- Article
Asymmetric Hubbard model in the generating functional method: Spectral functions in the Falicov-Kimball limit.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 137, doi. 10.1007/s11232-008-0012-0
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- Article
Study of the Hubbard model at half filling.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 52, doi. 10.1007/s11232-008-0005-z
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- Article
Calculation of the electronic structure of vacancies in GaSe by the green function.
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- Russian Physics Journal, 2006, v. 49, n. 11, p. 1159, doi. 10.1007/s11182-006-0239-x
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- Article
Theoretical photoelectronic spectra of molybdenum, tungsten, and rhenium disilicides.
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- Russian Physics Journal, 2006, v. 49, n. 7, p. 766, doi. 10.1007/s11182-006-0173-y
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- Article
Modeling band spectra of compound crystals in the basis of states of their sublattices.
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- Russian Physics Journal, 2006, v. 49, n. 7, p. 772, doi. 10.1007/s11182-006-0174-x
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- Article
Electronic structure and energy ratios of Ni<sub>3</sub>Al clusters in TiNi nanoparticles with an impurity Al atom.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1073, doi. 10.1007/s11182-006-0027-7
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- Article
Energy Band Genesis from Sublattice States in Sulfides of Alkali Metals with an Antifluorite Lattice.
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- Russian Physics Journal, 2005, v. 48, n. 2, p. 138, doi. 10.1007/s11182-005-0096-z
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- Article
Electronic Properties of III - V Semiconductors.
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- Russian Physics Journal, 2005, v. 48, n. 1, p. 70, doi. 10.1007/s11182-005-0086-1
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- Article
Electronic Structure of Triple Phosphides MgSiP<sub>2</sub>, ZnSiP<sub>2</sub>, and CdSiP<sub>2</sub>.
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- Russian Physics Journal, 2005, v. 48, n. 1, p. 78, doi. 10.1007/s11182-005-0087-0
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- Article
Quasi-potential approach to the three-quark nucleon wave function.
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- Russian Physics Journal, 2004, v. 47, n. 12, p. 1242, doi. 10.1007/s11182-005-0063-8
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- Article
Electron gas in the screening-corrected Hartree-Fock model.
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- Russian Physics Journal, 2004, v. 47, n. 12, p. 1229, doi. 10.1007/s11182-005-0061-x
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- Article
Special features of the electronic structure of NiTi and FeTi nanofragments ofB2 andB19 structures.
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- Russian Physics Journal, 2004, v. 47, n. 11, p. 1198, doi. 10.1007/s11182-005-0052-y
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- Article
Electronic structure of solid solutions of argentum halide and heterojunctions based on them.
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- Russian Physics Journal, 2004, v. 47, n. 11, p. 1100, doi. 10.1007/s11182-005-0038-9
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- Article
Effect of dimensional and magnetic quantization hybridization in the optical absorption spectra of nanoheterosystems withD<sup>(-)</sup>-states.
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- Russian Physics Journal, 2004, v. 47, n. 10, p. 1037, doi. 10.1007/s11182-005-0018-0
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- Article
Effects of Antimony Doping on Electronic Structure of SnO<sub>2</sub>.
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- Russian Physics Journal, 2004, v. 47, n. 7, p. 701, doi. 10.1023/B:RUPJ.0000049742.24712.49
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- Article
Contributions of Pseudoscalar Particles to the Abnormal Moments of an Electron in a Plane Wave Field.
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- Russian Physics Journal, 2004, v. 47, n. 4, p. 468, doi. 10.1023/B:RUPJ.0000042778.88964.5a
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- Article
Specific Features of Scattering by Spin Fluctuations and the Electronic Structure of Weak Band Semiconducting and Semimetal Magnets.
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- Russian Physics Journal, 2003, v. 46, n. 12, p. 1213, doi. 10.1023/B:RUPJ.0000028148.00384.08
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- Article
A Ground Miniband Width of a Superlattice with Rectangular Quantum Wells versus Constructive Parameters.
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- Russian Physics Journal, 2003, v. 46, n. 10, p. 1034, doi. 10.1023/B:RUPJ.0000020816.54057.d0
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- Article
New Form for the Coulomb Potential in Complex Crystals. Part II.
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- Russian Physics Journal, 2003, v. 46, n. 7, p. 714, doi. 10.1023/B:RUPJ.0000008202.94079.e9
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- Article
Investigation of the Recombination Processes in Zinc Oxide under Pulsed Excitation.
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- Russian Physics Journal, 2003, v. 46, n. 7, p. 721, doi. 10.1023/B:RUPJ.0000008204.48544.b0
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- Article
Theoretical Investigation of the Electronic and Spatial Structures of the La Impurity in a BaF<sub>2</sub> Crystal.
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- Russian Physics Journal, 2003, v. 46, n. 2, p. 126, doi. 10.1023/A:1024681526489
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- Article