Works matching DE "ENERGY-band theory of solids"
Results: 1045
Photocatalytic Properties of Ag-Modifying N-TiO 2 Films Prepared via Magnetron Sputtering.
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- Catalysts (2073-4344), 2025, v. 15, n. 2, p. 164, doi. 10.3390/catal15020164
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Spectroscopy and microscopy of graphene on metals:.
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- Vakuum in Forschung und Praxis, 2014, v. 26, n. 3, p. 19, doi. 10.1002/vipr.201400553
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The Mechanism of Piezocatalysis: Energy Band Theory or Screening Charge Effect?
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- Angewandte Chemie, 2022, v. 134, n. 6, p. 1, doi. 10.1002/ange.202110429
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Solution-Processable Hole-Generation Layer and Electron-Transporting Layer: Towards High-Performance, Alternating-Current-Driven, Field-Induced Polymer Electroluminescent Devices.
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- Advanced Functional Materials, 2014, v. 24, n. 18, p. 2677, doi. 10.1002/adfm.201303242
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Theoretical study on strain-induced variations in electronic properties of monolayer MoS.
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- Journal of Materials Science, 2014, v. 49, n. 19, p. 6762, doi. 10.1007/s10853-014-8370-5
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Atomic and electronic structures of LiTiO/LiTiO (001) interfaces by first-principles calculations.
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- Journal of Materials Science, 2014, v. 49, n. 11, p. 4032, doi. 10.1007/s10853-014-8102-x
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Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications.
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- Journal of Materials Science, 2014, v. 49, n. 11, p. 4018, doi. 10.1007/s10853-014-8071-0
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First-principles investigations of structural, elastic, electronic and magnetic properties of GaMnP and InMnP.
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- Journal of Materials Science, 2013, v. 48, n. 17, p. 6074, doi. 10.1007/s10853-013-7405-7
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Role of aqueous ammonia on the growth of ZnO nanostructures and its influence on solid-state dye sensitized solar cells.
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- Journal of Materials Science, 2013, v. 48, n. 5, p. 2076, doi. 10.1007/s10853-012-6981-2
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Electronic and magnetic properties of FeCrSi ordered alloys from first principles.
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- Journal of Materials Science, 2012, v. 47, n. 2, p. 797, doi. 10.1007/s10853-011-5857-1
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The electronic band structure of InN, InAs and InSb compounds.
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- Journal of Materials Science, 2008, v. 43, n. 8, p. 2935, doi. 10.1007/s10853-007-1794-4
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Temperature-dependent refractive index of semiconductors.
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- Journal of Materials Science, 2008, v. 43, n. 6, p. 1795, doi. 10.1007/s10853-007-2381-4
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Photoinduced characteristics in La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> film.
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- Journal of Materials Science, 2007, v. 42, n. 23, p. 9617, doi. 10.1007/s10853-007-1972-4
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Evolution of the electronic structure and properties of neutral and charged arsenic clusters.
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- Journal of Materials Science, 2007, v. 42, n. 22, p. 9154, doi. 10.1007/s10853-007-1928-8
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Electronic properties of AlVO<sub>4</sub> for gas sensor applications.
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- Journal of Materials Science, 2007, v. 42, n. 20, p. 8690, doi. 10.1007/s10853-007-1800-x
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Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs.
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- Journal of Materials Science, 2007, v. 42, n. 16, p. 6913, doi. 10.1007/s10853-006-1432-6
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Electrical and optical properties of InSbSe<sub>3 </sub>amorphous thin films.
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- Journal of Materials Science, 2006, v. 41, n. 23, p. 7969, doi. 10.1007/s10853-006-0868-z
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Iron at earth-core conditions.
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- Journal of Materials Science, 2006, v. 41, n. 5, p. 1523, doi. 10.1007/s10853-006-4620-5
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Determination of the alloy scattering potential in modulation-doped In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterojunctions from magnetotransport measurements.
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- Journal of Materials Science, 2005, v. 40, n. 24, p. 6391, doi. 10.1007/s10853-005-1599-2
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Atomic structure and electronic properties of the GaN/ZnO (0001) interface.
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- Journal of Materials Science, 2005, v. 40, n. 12, p. 3051, doi. 10.1007/s10853-005-2664-6
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Atomic and electronic structure of [0001]/( $$\bar{1}\bar{2}30$$) Σ7 symmetric tilt grain boundary in ZnO bicrystal with linear current-voltage characteristic.
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- Journal of Materials Science, 2005, v. 40, n. 12, p. 3059, doi. 10.1007/s10853-005-2665-5
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A theoretical study of H absorption at a Fe(110)–Pd(100) interface and Fe–Pd alloys.
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- Journal of Materials Science, 2005, v. 40, n. 11, p. 2775, doi. 10.1007/s10853-005-2407-8
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Investigation on the performances of multi-quantum barriers in a single quantum well solar cell.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1451, doi. 10.1007/s10853-005-0581-3
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Spectral response and I-V characteristics of large well number multi quantum well solar cells.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1445, doi. 10.1007/s10853-005-0580-4
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Krylov-Bogoliubov-Mitropolsky averaging used to construct effective Hamiltonians in the theory of strongly correlated electron systems.
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- Theoretical & Mathematical Physics, 2009, v. 161, n. 2, p. 1567, doi. 10.1007/s11232-009-0143-y
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A diagram approach to the strong coupling in the single-impurity Anderson model.
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- Theoretical & Mathematical Physics, 2008, v. 155, n. 3, p. 914, doi. 10.1007/s11232-008-0077-9
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Microscopic theory of superconductivity in MgB<sub>2</sub>-type systems in a magnetic field: A neighborhood of H <sub> c2</sub>.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 94, doi. 10.1007/s11232-008-0009-8
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Asymmetric Hubbard model in the generating functional method: Spectral functions in the Falicov-Kimball limit.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 137, doi. 10.1007/s11232-008-0012-0
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Study of the Hubbard model at half filling.
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- Theoretical & Mathematical Physics, 2008, v. 154, n. 1, p. 52, doi. 10.1007/s11232-008-0005-z
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The influence of magnetic ordering on the electronic energy structure of CuFeS.
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- Journal of Structural Chemistry, 2011, v. 52, p. 61, doi. 10.1134/S0022476611070080
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Electronic structure and physicochemical properties of s elements.
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- Journal of Structural Chemistry, 2008, v. 49, n. 1, p. 131, doi. 10.1007/s10947-008-0019-2
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Chemical bonding and electronic structure of LaMnO<sub>3</sub> and La<sub>0.75</sub>MnO<sub>3</sub> orthorhombic crystals.
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- Journal of Structural Chemistry, 2007, v. 48, n. 2, p. 212, doi. 10.1007/s10947-007-0034-8
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Hybrid Model of Thermostabilization of the Drain Current in n‐Channel MOS Transistors.
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- Journal of Engineering Physics & Thermophysics, 2003, v. 76, n. 4, p. 864, doi. 10.1023/A:1025614608299
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A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03835-3
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On a correlation between the electronic structure and passivability of Fe-Cr alloys.
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- Protection of Metals, 2005, v. 41, n. 2, p. 117, doi. 10.1007/s11124-005-0016-1
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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2322, doi. 10.1049/iet-pel.2015.0009
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Hall coefficient signals orbital differentiation in the Hund's metal Sr<sub>2</sub>RuO<sub>4</sub>.
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- NPJ Quantum Materials, 2019, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41535-019-0175-y
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Band Structure Observed in the Current–Voltage Characteristics of SINININIS-Type Junctions.
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- JETP Letters, 2000, v. 71, n. 8, p. 342, doi. 10.1134/1.568347
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Interfacial electronic states in semiconductor heterostructures.
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- JETP Letters, 1998, v. 67, n. 6, p. 416, doi. 10.1134/1.567684
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Thermal hopping of single charges in the strong dissipation limit.
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- JETP Letters, 1996, v. 64, n. 8, p. 592, doi. 10.1134/1.567267
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The Second Boundaries of Stability Zones and the Angular Diagrams of Conductivity for Metals Having Complicated Fermi Surfaces.
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- Journal of Experimental & Theoretical Physics, 2018, v. 127, n. 6, p. 1087, doi. 10.1134/S1063776118100187
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Ginzburg-Landau expansion in strongly disordered attractive Anderson-Hubbard model.
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- Journal of Experimental & Theoretical Physics, 2017, v. 125, n. 1, p. 111, doi. 10.1134/S1063776117060139
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On the dynamics of a polaron in a classical chain with finite temperature.
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- Journal of Experimental & Theoretical Physics, 2015, v. 120, n. 1, p. 125, doi. 10.1134/S106377611501015X
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Dip Coated ZnO Films for Transparent Window Applications.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 5, p. 1, doi. 10.21272/jnep.10(5).05038
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The Electronic Band Structure of the BaSnO<sub>3</sub> and SrSnO<sub>3</sub> Perovskites Calculated within the GGA and GW Approaches.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 5, p. 1, doi. 10.21272/jnep.10(5).05036
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PATTERN FORMING INSTABILITIES DRIVEN BY NON-DIFFUSIVE INTERACTIONS.
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- Networks & Heterogeneous Media, 2013, v. 8, n. 1, p. 397, doi. 10.3934/nhm.2013.8.397
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Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes.
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- Applied Physics B: Lasers & Optics, 2010, v. 98, n. 4, p. 779, doi. 10.1007/s00340-009-3856-6
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High transmission with narrow bandwidth of metallic defect mode in 1-D dielectric photonic crystals.
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- Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 853, doi. 10.1007/s00340-008-3231-z
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High-peak-power passively Q-switched Nd:YAG laser at 946 nm.
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- Applied Physics B: Lasers & Optics, 2008, v. 91, n. 3/4, p. 429, doi. 10.1007/s00340-008-2975-9
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Optical bistability in a three-level semiconductor quantum-well system.
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- Applied Physics B: Lasers & Optics, 2004, v. 79, n. 1, p. 65, doi. 10.1007/s00340-004-1521-7
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