Works matching DE "ELECTRON mobility measurement"

Results: 11

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface.
Published in:
Advanced Materials Interfaces, 2018, v. 5, n. 8, p. 1, doi. 10.1002/admi.201701565
By:
- Gao, Zhaomeng;
- Huang, Xiushi;
- Li, Pei;
- Wang, Longfei;
- Wei, Ling;
- Zhang, Weifeng;
- Guo, Haizhong
Publication type:
Article
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.
Published in:
Scientific Reports, 2014, p. 1, doi. 10.1038/srep04558
By:
- Pallecchi, E.;
- Lafont, F.;
- Cavaliere, V.;
- Schopfer, F.;
- Mailly, D.;
- Poirier, W.;
- Ouerghi, A.
Publication type:
Article
Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy.
Published in:
Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3052, doi. 10.1007/s10854-015-2796-7
By:
- Tsai, Chia-Lung;
- Lin, Yow-Jon;
- Lin, Jian-Huang
Publication type:
Article
Effect of growth temperature and time on the ZnO film properties and the performance of dye-sensitized solar cell (DSSC).
Published in:
Journal of Solid State Electrochemistry, 2015, v. 19, n. 4, p. 1217, doi. 10.1007/s10008-014-2737-z
By:
- Iwantono, I.;
- Nurwidya, W.;
- Lestari, L.;
- Naumar, F.;
- Nafisah, S.;
- Umar, A.;
- Rahman, M.;
- Salleh, M.
Publication type:
Article
Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers.
Published in:
Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 24, p. 1, doi. 10.1049/el.2013.3404
By:
- F. Tong;
- K. Yapabandara;
- C. W. Yang;
- Khanal, M.;
- C. Jiao;
- Goforth, M.;
- Ozden, B.;
- A. Ahyi;
- Hamilton, M.;
- G. Niu;
- Ewoldt, D.A.;
- G. Chung;
- Park, M.
Publication type:
Article
Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure.
Published in:
Scientific Reports, 2015, p. 16812, doi. 10.1038/srep16812
By:
- Pal, Shovon;
- Markmann, Sergej;
- Nong, Hanond;
- Jukam, Nathan;
- Kukharchyk, Nadezhda;
- Valentin, Sascha R.;
- Scholz, Sven;
- Ludwig, Arne;
- Wieck, Andreas D.;
- Bock, Claudia;
- Kunze, Ulrich
Publication type:
Article
Brief Review of Surface Passivation on III-V Semiconductor.
Published in:
Crystals (2073-4352), 2018, v. 8, n. 5, p. 226, doi. 10.3390/cryst8050226
By:
- Zhou, Lu;
- Bo, Baoxue;
- Yan, Xingzhen;
- Wang, Chao;
- Chi, Yaodan;
- Yang, Xiaotian
Publication type:
Article
Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature.
Published in:
Materials (1996-1944), 2016, v. 9, n. 9, p. 716, doi. 10.3390/ma9090716
By:
- Zhishuo Huang;
- Wenxu Zhang;
- Wanli Zhang
Publication type:
Article
An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.
Published in:
Angewandte Chemie, 2016, v. 128, n. 4, p. 1458, doi. 10.1002/ange.201508482
By:
- Dou, Chuandong;
- Long, Xiaojing;
- Ding, Zicheng;
- Xie, Zhiyuan;
- Liu, Jun;
- Wang, Lixiang
Publication type:
Article
Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600419
By:
- Frayssinet, Eric;
- Leclaire, Paul;
- Mohdad, Jad;
- Latrach, Soumaya;
- Chenot, Sébastien;
- Nemoz, Maud;
- Damilano, Benjamin;
- Cordier, Yvon
Publication type:
Article
Ternary NiS/Zn xCd1- xS/Reduced Graphene Oxide Nanocomposites for Enhanced Solar Photocatalytic H2-Production Activity.
Published in:
Advanced Energy Materials, 2014, v. 4, n. 10, p. n/a, doi. 10.1002/aenm.201301925
By:
- Zhang, Jun;
- Qi, Lifang;
- Ran, Jingrun;
- Yu, Jiaguo;
- Qiao, Shi Zhang
Publication type:
Article

Works matching DE "ELECTRON mobility measurement"

Reversible Resistance Switching of 2D Electron Gas at LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterointerface.

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy.

Effect of growth temperature and time on the ZnO film properties and the performance of dye-sensitized solar cell (DSSC).

Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers.

Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure.

Brief Review of Surface Passivation on III-V Semiconductor.

Computational Search for Two-Dimensional MX<sub>2</sub> Semiconductors with Possible High Electron Mobility at Room Temperature.

An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.

Ternary NiS/Zn <sub>x</sub>Cd<sub>1- x</sub>S/Reduced Graphene Oxide Nanocomposites for Enhanced Solar Photocatalytic H<sub>2</sub>-Production Activity.