Works matching DE "ELECTRON mobility measurement"

Results: 11

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3052, doi. 10.1007/s10854-015-2796-7

By:

Tsai, Chia-Lung;
Lin, Yow-Jon;
Lin, Jian-Huang

Publication type:

Article

Effect of growth temperature and time on the ZnO film properties and the performance of dye-sensitized solar cell (DSSC).

Published in:

Journal of Solid State Electrochemistry, 2015, v. 19, n. 4, p. 1217, doi. 10.1007/s10008-014-2737-z

By:

Iwantono, I.;
Nurwidya, W.;
Lestari, L.;
Naumar, F.;
Nafisah, S.;
Umar, A.;
Rahman, M.;
Salleh, M.

Publication type:

Article

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04558

By:

Pallecchi, E.;
Lafont, F.;
Cavaliere, V.;
Schopfer, F.;
Mailly, D.;
Poirier, W.;
Ouerghi, A.

Publication type:

Article

An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

Published in:

Angewandte Chemie, 2016, v. 128, n. 4, p. 1458, doi. 10.1002/ange.201508482

By:

Dou, Chuandong;
Long, Xiaojing;
Ding, Zicheng;
Xie, Zhiyuan;
Liu, Jun;
Wang, Lixiang

Publication type:

Article

Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 24, p. 1, doi. 10.1049/el.2013.3404

By:

F. Tong;
K. Yapabandara;
C. W. Yang;
Khanal, M.;
C. Jiao;
Goforth, M.;
Ozden, B.;
A. Ahyi;
Hamilton, M.;
G. Niu;
Ewoldt, D.A.;
G. Chung;
Park, M.

Publication type:

Article

Brief Review of Surface Passivation on III-V Semiconductor.

Published in:

Crystals (2073-4352), 2018, v. 8, n. 5, p. 226, doi. 10.3390/cryst8050226

By:

Zhou, Lu;
Bo, Baoxue;
Yan, Xingzhen;
Wang, Chao;
Chi, Yaodan;
Yang, Xiaotian

Publication type:

Article

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature.

Published in:

Materials (1996-1944), 2016, v. 9, n. 9, p. 716, doi. 10.3390/ma9090716

By:

Zhishuo Huang;
Wenxu Zhang;
Wanli Zhang

Publication type:

Article

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface.

Published in:

Advanced Materials Interfaces, 2018, v. 5, n. 8, p. 1, doi. 10.1002/admi.201701565

By:

Gao, Zhaomeng;
Huang, Xiushi;
Li, Pei;
Wang, Longfei;
Wei, Ling;
Zhang, Weifeng;
Guo, Haizhong

Publication type:

Article

Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure.

Published in:

Scientific Reports, 2015, p. 16812, doi. 10.1038/srep16812

By:

Pal, Shovon;
Markmann, Sergej;
Nong, Hanond;
Jukam, Nathan;
Kukharchyk, Nadezhda;
Valentin, Sascha R.;
Scholz, Sven;
Ludwig, Arne;
Wieck, Andreas D.;
Bock, Claudia;
Kunze, Ulrich

Publication type:

Article

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600419

By:

Frayssinet, Eric;
Leclaire, Paul;
Mohdad, Jad;
Latrach, Soumaya;
Chenot, Sébastien;
Nemoz, Maud;
Damilano, Benjamin;
Cordier, Yvon

Publication type:

Article

Ternary NiS/Zn xCd1- xS/Reduced Graphene Oxide Nanocomposites for Enhanced Solar Photocatalytic H2-Production Activity.

Published in:

Advanced Energy Materials, 2014, v. 4, n. 10, p. n/a, doi. 10.1002/aenm.201301925

By:

Zhang, Jun;
Qi, Lifang;
Ran, Jingrun;
Yu, Jiaguo;
Qiao, Shi Zhang

Publication type:

Article

Works matching DE "ELECTRON mobility measurement"

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy.

Effect of growth temperature and time on the ZnO film properties and the performance of dye-sensitized solar cell (DSSC).

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers.

Brief Review of Surface Passivation on III-V Semiconductor.

Computational Search for Two-Dimensional MX<sub>2</sub> Semiconductors with Possible High Electron Mobility at Room Temperature.

Reversible Resistance Switching of 2D Electron Gas at LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterointerface.

Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure.

Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer.

Ternary NiS/Zn <sub>x</sub>Cd<sub>1- x</sub>S/Reduced Graphene Oxide Nanocomposites for Enhanced Solar Photocatalytic H<sub>2</sub>-Production Activity.