Nanograined Half-Heusler Semiconductors as Advanced Thermoelectrics: An Ab Initio High-Throughput Statistical Study.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 47, p. 7427, doi. 10.1002/adfm.201401201
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- Article
Works matching DE "ELECTRICAL properties of compound semiconductors"
Results: 4
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2
Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub> Films Grown on Silicon by Atomic Layer Deposition.
- Published in:
- Nanoscale Research Letters, 2019, v. 14, n. 1, p. 1, doi. 10.1186/s11671-019-2907-0
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- Publication type:
- Article
3
Electrical Properties of Metal-Porous GaAs Structure at Water Adsorption.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 4, p. 2587, doi. 10.1007/s11664-019-07013-z
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- Publication type:
- Article
4
First-Principles Calculations of Structural, Electronic and Optical Properties of Ternary Semiconductor Alloys ZAsSb ( Z = B, Al, Ga, In).
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 8, p. 4805, doi. 10.1007/s11664-017-5425-9
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- Article