Works matching DE "ELECTRIC properties of silicon nitride"

Results: 9

Long Passage Times of Short ssDNA Molecules through Metallized Nanopores Fabricated by Controlled Breakdown.
Published in:
Advanced Functional Materials, 2014, v. 24, n. 48, p. 7745, doi. 10.1002/adfm.201402468
By:
- Kwok, Harold;
- Waugh, Matthew;
- Bustamante, José;
- Briggs, Kyle;
- Tabard‐Cossa, Vincent
Publication type:
Article
Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability.
Published in:
SID Symposium Digest of Technical Papers, 2015, v. 46, p. 55, doi. 10.1002/sdtp.10532
By:
- Nag, Manoj;
- Steudel, Soeren;
- Smout, Steve;
- Bhoolokam, Ajay;
- Genoe, Jan;
- Cobb, Brian;
- Kumar, Abhishek;
- Guido, Groeseneken;
- Heremans, Paul
Publication type:
Article
Electronic structure and properties of neutral, anionic and cationic silicon-nitrogen nanoclusters.
Published in:
Journal of Molecular Modeling, 2013, v. 19, n. 6, p. 2657, doi. 10.1007/s00894-013-1809-9
By:
- Mogren, Muneerah;
- El-Azhary, Adel;
- Alkiali, Wad.;
- Hochlaf, Majdi
Publication type:
Article
Effects of Hydrostatic Pressure and Biaxial Strains on the Elastic and Electronic Properties of β‐Si3N4.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 6, p. 1, doi. 10.1002/pssb.201700676
By:
- Zhu, Haiyan;
- Shi, Liwei;
- Li, Shuaiqi;
- Zhang, Shaobo;
- Tang, Tianliang;
- Xia, Wangsuo
Publication type:
Article
Normal-dispersion microcombs enabled by controllable mode interactions.
Published in:
Laser & Photonics Reviews, 2015, v. 9, n. 4, p. L23, doi. 10.1002/lpor.201500107
By:
- Xue, Xiaoxiao;
- Xuan, Yi;
- Wang, Pei‐Hsun;
- Liu, Yang;
- Leaird, Dan E.;
- Qi, Minghao;
- Weiner, Andrew M.
Publication type:
Article
Rear-Sided Passivation by SiN:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.
Published in:
Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1505-7
By:
- Sun, Yiling;
- Gao, Pingqi;
- He, Jian;
- Zhou, Suqiong;
- Ying, Zhiqin;
- Yang, Xi;
- Xiang, Yong;
- Ye, Jichun
Publication type:
Article
Effect of TiO 2 addition on the microstructures, mechanical and dielectric properties of porous Si 3 N 4 -based ceramics.
Published in:
Advances in Applied Ceramics: Structural, Functional & Bioceramics, 2017, v. 116, n. 6, p. 348, doi. 10.1080/17436753.2017.1320063
By:
- Gu, Li;
- Yuan, Wuhua;
- Liao, Rong;
- Wang, Hongsheng;
- Zhu, Baoxin
Publication type:
Article
Laser-assisted grinding of silicon nitride by picosecond laser.
Published in:
International Journal of Advanced Manufacturing Technology, 2017, v. 93, n. 5-8, p. 2517, doi. 10.1007/s00170-017-0440-9
By:
- Azarhoushang, Bahman;
- Soltani, Babak;
- Zahedi, Ali
Publication type:
Article
Improving the thermal conductivity of epoxy composites using a combustion-synthesized aggregated β-Si3N4 filler with randomly oriented grains.
Published in:
Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-80009-6
By:
- Shimamura, Akihiro;
- Hotta, Yuji;
- Hyuga, Hideki;
- Hotta, Mikinori;
- Hirao, Kiyoshi
Publication type:
Article

Works matching DE "ELECTRIC properties of silicon nitride"

Long Passage Times of Short ssDNA Molecules through Metallized Nanopores Fabricated by Controlled Breakdown.

Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability.

Electronic structure and properties of neutral, anionic and cationic silicon-nitrogen nanoclusters.

Effects of Hydrostatic Pressure and Biaxial Strains on the Elastic and Electronic Properties of β‐Si<sub>3</sub>N<sub>4</sub>.

Normal-dispersion microcombs enabled by controllable mode interactions.

Rear-Sided Passivation by SiN:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

Effect of TiO 2 addition on the microstructures, mechanical and dielectric properties of porous Si 3 N 4 -based ceramics.

Laser-assisted grinding of silicon nitride by picosecond laser.

Improving the thermal conductivity of epoxy composites using a combustion-synthesized aggregated β-Si<sub>3</sub>N<sub>4</sub> filler with randomly oriented grains.