Works matching DE "ELECTRIC properties of silicon crystals"
Results: 24
Phonon scattering enhancement in silicon nanolayers.
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- Journal of Materials Science, 2013, v. 48, n. 7, p. 2779, doi. 10.1007/s10853-012-6828-x
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Fabrication of 'finger-geometry' silicon solar cells by electrochemical anodisation.
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- Journal of Materials Science, 2013, v. 48, n. 7, p. 2977, doi. 10.1007/s10853-012-7075-x
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Effect of dissociation of iron–boron pairs in crystalline silicon on solar cell properties.
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- Progress in Photovoltaics, 2005, v. 13, n. 4, p. 325, doi. 10.1002/pip.594
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Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline silicon.
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- Progress in Photovoltaics, 2005, v. 13, n. 4, p. 287, doi. 10.1002/pip.586
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Shunt types in crystalline silicon solar cells.
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- Progress in Photovoltaics, 2004, v. 12, n. 7, p. 529, doi. 10.1002/pip.544
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Analysis of leakage currents in photovoltaic modules under high-voltage bias in the field.
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- Progress in Photovoltaics, 2002, v. 10, n. 1, p. 15, doi. 10.1002/pip.401
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Thermal deformation of cryogenically cooled silicon crystals under intense X-ray beams: measurement and finite-element predictions of the surface shape.
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- Journal of Synchrotron Radiation, 2013, v. 20, n. 4, p. 567, doi. 10.1107/S0909049513009436
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Solar In Sight.
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- Alternatives Journal (AJ) - Canada's Environmental Voice, 2014, v. 40, n. 5, p. 50
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The influence of etch depth on electrical properties of solar cells.
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- Photovoltaics International, 2011, n. 13, p. 71
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Silicon solar cell fabrication in a CMOS line.
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- Photovoltaics International, 2010, n. 9, p. 88
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Purifying UMG silicon at the French PHOTOSIL project.
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- Photovoltaics International, 2010, n. 9, p. 58
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Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography.
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- Electronics & Communications in Japan, 2016, v. 99, n. 5, p. 11, doi. 10.1002/ecj.11804
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Theoretic analysis on electric conductance of nano-wire transistors.
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- Applied Physics A: Materials Science & Processing, 2010, v. 98, n. 1, p. 135, doi. 10.1007/s00339-009-5453-2
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Identifying and counting point defects in carbon nanotubes.
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- Nature Materials, 2005, v. 4, n. 12, p. 906, doi. 10.1038/nmat1516
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The features of phonon component of linear dichroism in uniaxially strained silicon crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 319, doi. 10.15407/spqeo6.03.319
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Thermoelectric Properties of Nanocrystalline Silicon from a Scaled- Up Synthesis Plant.
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- Advanced Engineering Materials, 2013, v. 15, n. 11, p. 1152, doi. 10.1002/adem.201300182
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Characterisation of single crystalline silicon grown by Czochralski method.
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- Materials Research Innovations, 2012, v. 16, n. 6, p. 425, doi. 10.1179/1433075X12Y.0000000018
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Specific features of formation of radiation defects in the silicon layer in 'silicon-on-insulator' structures.
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- Semiconductors, 2011, v. 45, n. 6, p. 738, doi. 10.1134/S1063782611060224
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Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.
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- Semiconductors, 2006, v. 40, n. 2, p. 143, doi. 10.1134/S1063782606020059
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A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon.
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- Semiconductors, 2006, v. 40, n. 2, p. 175, doi. 10.1134/S1063782606020126
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Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO<sub>2</sub> Thermal Oxide Using Selective Etching.
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- Semiconductors, 2004, v. 38, n. 11, p. 1254, doi. 10.1134/1.1823054
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Terahertz emission at impurity electrical breakdown in Si(Li).
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- Technical Physics Letters, 2016, v. 42, n. 10, p. 1031, doi. 10.1134/S1063785016100163
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Optimization of the thermoelectric figure of merit in the transmutation-doped and ordinary n-Si crystals.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2146, doi. 10.1002/pssa.201532160
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AN ELECTRICALLY TUNABLE FOCUSING PICO PROJECTION SYSTEM BASED ON A LIQUID CRYSTAL LENS ADOPTING A LIQUID CRYSTAL AND POLYMER COMPOSITE FILM.
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- Journal of Nonlinear Optical Physics & Materials, 2011, v. 20, n. 4, p. 477, doi. 10.1142/S0218863511006273
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