Works matching DE "ELECTRIC properties of semiconductors"

Results: 96

Determinación de la resistencia térmica de láseres semiconductores a partir de parámetros medidos en régimen de pulsos.

Published in:

Revista Cubana de Física, 2010, v. 27, n. 2B, p. 238

By:

Pernas, R.;
Abelenda, A.;
Sánchez, M.

Publication type:

Article

Thermal tuning of electrical and dielectric characteristics of Mn-doped Zn0.95Fe0.05O dilute magnetic semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3943, doi. 10.1007/s10854-017-8334-z

By:

Zaineb, Safeera;
Atiq, Shahid;
Mahmood, Asif;
Ramay, Shahid M.;
Riaz, Saira;
Naseem, Shahzad

Publication type:

Article

Effect of Yb2O3 addition on varistor properties and aging characteristics of ZnO–V2O5–Mn3O4 system.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 4, p. 2958, doi. 10.1007/s10854-017-8226-2

By:

Nahm, Choon-W.

Publication type:

Article

Study of optical and electrical assessments of the quaternary MgZnSnO system containing different Mg content.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4235, doi. 10.1007/s10854-014-2155-0

By:

Soylu, M.;
Aydin, H.;
Al-Ghamdi, Ahmed;
Farooq, W.;
Yakuphanoglu, F.

Publication type:

Article

First principles studies of structural, electrical and magnetic properties of semiconductor nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 739, doi. 10.1002/pssr.201307234

By:

Galicka, Marta;
Buczko, Ryszard;
Kacman, Perla;
Lima, Erika N.;
Schmidt, Tome M.;
Shtrikman, Hadas

Publication type:

Article

Tuning the near-gap electronic structure of Cu2O by anion-cation co-doping for enhanced solar energy conversion.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 1, p. -1, doi. 10.1142/S0217984916504297

By:

Si, Yuan;
Yang, Hao-Ming;
Wu, Hong-Yu;
Huang, Wei-Qing;
Yang, Ke;
Peng, Ping;
Huang, Gui-Fang

Publication type:

Article

Novel diffusions of interstitial atoms in II-VI compounds zinc selenide.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 11, p. 1, doi. 10.1142/S021798491550044X

By:

Chen, Li An;
Jiang, En Hai;
Zhu, Xing Feng;
Chen, Ling Fu

Publication type:

Article

Effect of CdTe Addition on the Electrical Properties and AC Susceptibility of YBaCuO Superconductor.

Published in:

Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 12, p. 3361, doi. 10.1007/s10948-017-4157-7

By:

Nur-Akasyah, J.;
Nur-Shamimie, N.;
Abd-Shukor, R.

Publication type:

Article

Half-metallic Ferromagnetism in the Rocksalt and Zincblende NaX (X=O, S, Se, Te, and Po).

Published in:

Journal of Superconductivity & Novel Magnetism, 2012, v. 25, n. 5, p. 1589, doi. 10.1007/s10948-012-1480-x

By:

Ahmadian, F.

Publication type:

Article

Preparing for the Post-Silicon Semiconductor Era.

Published in:

AAPPS Bulletin, 2015, v. 25, n. 2, p. 8

By:

JIN SANG KIM;
HYUN CHEOL KOO;
JEON-KOOK LEE;
SUNG WOOK MOON;
JIN DONG SONG;
YONG-WON SONG;
JOONYEON CHANG

Publication type:

Article

Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 1998, doi. 10.1134/S106378261816025X

By:

Rabehi, A.;
Amrani, M.;
Benamara, Z.;
Akkal, B.;
Ziane, A.;
Guermoui, M.;
Hatem-Kacha, A.;
Monier, G.;
Gruzza, B.;
Bideux, L.;
Robert-Goumet, C.

Publication type:

Article

New mechanism of semiconductor polarization at the interface with an organic insulator.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 193, doi. 10.1134/S1063782617020245

By:

Yafyasov, A.;
Bogevolnov, V.;
Ryumtsev, E.;
Kovshik, A.;
Mikhailovski, V.

Publication type:

Article

Electrical parameters of polycrystalline SmEuS rare-earth semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1141, doi. 10.1134/S1063782616090116

By:

Kaminskii, V.;
Kazanin, M.;
Romanova, M.;
Kamenskaya, G.;
Sharenkova, N.

Publication type:

Article

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga).

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 722, doi. 10.1134/S1063782616060191

By:

Poklonski, N.;
Vyrko, S.;
Poklonskaya, O.;
Zabrodskii, A.

Publication type:

Article

Deep centers in TiO-Si structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1012, doi. 10.1134/S1063782615080102

By:

Kalygina, V.;
Petrova, Yu.;
Prudaev, I.;
Tolbanov, O.;
Tsupiy, S.

Publication type:

Article

Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 465, doi. 10.1134/S1063782614040113

By:

Gergel, V.;
Altukhov, I.;
Verkhovtseva, A.;
Galiev, G.;
Gorshkova, N.;
Zhigaltsov, S.;
Zelenyi, A.;
Il'ichev, E.;
Minkin, V.;
Paprotskij, S.;
Yakupov, M.

Publication type:

Article

Electrical properties of MOS diodes In/TiO/ p-CdTe.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 487, doi. 10.1134/S1063782614040071

By:

Brus, V.;
Ilashchuk, M.;
Orletsky, I.;
Maryanchuk, P.;
Ulyanytskiy, K.

Publication type:

Article

Formation of built-in potential in Si (100) crystals under microwave plasma treatment.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 511, doi. 10.1134/S1063782614040277

By:

Yafarov, R.

Publication type:

Article

Anomalies in the thermal and electrical conductivity of CuInSe crystals.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 152, doi. 10.1134/S1063782614020171

By:

Mygal, V.;
But, A.;
Bodnar, I.

Publication type:

Article

Synthesis of thin p-type rutile films.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 251, doi. 10.1134/S1063782614020110

By:

Ievlev, V.;
Kushev, S.;
Ovchinnikov, O.;
Sumez, M.;
Latyshev, A.;
Bezryadin, M.;
Leonova, L.;
Kannykin, S.;
Vozgorkov, A.;
Smirnov, M.

Publication type:

Article

Obtaining of SmS based semiconducting material and investigation of its electrical properties.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1298, doi. 10.1134/S1063782613100126

By:

Kaminskii, V.;
Hirai, Shinji;
Kuzuya, Toshihiro;
Solov'ev, S.;
Stepanov, N.;
Sharenkova, N.

Publication type:

Article

Preparation and Properties of Polyhydroxamic Acid and Poly(Vinyl Acetonyl Ketone) and Their Chelated Compounds.

Published in:

Energy Sources Part A: Recovery, Utilization & Environmental Effects, 2013, v. 35, n. 15, p. 1427, doi. 10.1080/15567036.2010.520069

By:

Abed, M. Yahia;
Mazrouaa, A. M.;
Ashery, A.;
Abdeen, Z.;
Azziz, H. A.

Publication type:

Article

First-Principles Calculations of Structural, Electronic and Optical Properties of Ternary Semiconductor Alloys ZAsSb ( Z = B, Al, Ga, In).

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 8, p. 4805, doi. 10.1007/s11664-017-5425-9

By:

Bounab, S.;
Bentabet, A.;
Bouhadda, Y.;
Belgoumri, Gh.;
Fenineche, N.

Publication type:

Article

Optical, Electrical, and Morphological Effects of Yttrium Doping of Cadmium Oxide Thin Films Grown by Ultrasonic Spray Pyrolysis.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2090, doi. 10.1007/s11664-016-5134-9

By:

Tombak, Ahmet;
Baturay, Silan;
Kilicoglu, Tahsin;
Ocak, Yusuf

Publication type:

Article

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2379, doi. 10.1007/s11664-017-5294-2

By:

Taşçıoğlu, İ.;
Tüzün Özmen, Ö.;
Şağban, H.;
Yağlıoğlu, E.;
Altındal, Ş.

Publication type:

Article

Temperature Dependence of InGaN Dual-Junction Solar Cell.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2451, doi. 10.1007/s11664-017-5310-6

By:

Mesrane, A.;
Mahrane, A.;
Rahmoune, F.;
Oulebsir, A.

Publication type:

Article

Superior Dielectric Performance of Engineering Thermoplastic as a Result of In situ Embedding of Nanoscale Mixed-Phase Molybdenum Oxide.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 7, p. 2269, doi. 10.1007/s11664-015-3686-8

By:

Qureshi, Nilam;
Shinde, Manish;
Ratheesh, R.;
Bhalerao, Anand;
Kale, Bharat;
Mulik, Uttam;
Amalnerkar, Dinesh

Publication type:

Article

Electrical and Switching Phenomenon of SeGeCd (0 ≤ x ≤ 12 at.%) Amorphous System.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 87, doi. 10.1007/s11664-014-3404-y

By:

Alrebati, A.M.;
Afifi, M.A.;
Hegab, N.A.;
Shakra, A.M.;
Farid, A.S.

Publication type:

Article

Electric Properties of Semiconductor Nanopillars.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 6, p. 1972, doi. 10.1007/s11664-013-2929-9

By:

Bartsch, Th.;
Sonnenberg, D.;
Strelow, Ch.;
Heyn, Ch.;
Hansen, W.

Publication type:

Article

Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 9, p. 2380, doi. 10.1007/s11664-012-2166-7

By:

Han, Dong-Suk;
Moon, Yeon-Keon;
Lee, Sih;
Kim, Kyung-Taek;
Moon, Dae-Yong;
Lee, Sang-Ho;
Kim, Woong-Sun;
Park, Jong-Wan

Publication type:

Article

Evidence of Oxygen Ferromagnetism in ZnO Based Materials.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 14, p. 2094, doi. 10.1002/adfm.201303087

By:

Guglieri, Clara;
Céspedes, Eva;
Espinosa, Ana;
Laguna‐Marco, María Ángeles;
Carmona, Noemi;
Takeda, Yukiharu;
Okane, Tetsuo;
Nakamura, Tetsuya;
García‐Hernández, Mar;
García, Miguel Ángel;
Chaboy, Jesús

Publication type:

Article

Highly Conductive CdS Inverse Opals for Photochemical Solar Cells.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 5, p. 707, doi. 10.1002/adfm.201300734

By:

Ling, Tao;
Kulinich, Sergei A.;
Zhu, Zi‐Ling;
Qiao, Shi‐Zhang;
Du, Xi‐Wen

Publication type:

Article

Electric arc furnace design and construction for metallurgical and semiconductor research.

Published in:

International Journal of Advanced Manufacturing Technology, 2016, v. 82, n. 5-8, p. 997, doi. 10.1007/s00170-015-7424-4

By:

Barbouche, M.;
Hajji, M.;
Ezzaouia, H.

Publication type:

Article

Radiation-Induced Electrical Conductivity of Nanocomposite Materials.

Published in:

Technical Physics, 2018, v. 63, n. 6, p. 838, doi. 10.1134/S1063784218060117

By:

Dyuryagina, N. S.;
Yalovets, A. P.

Publication type:

Article

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model.

Published in:

Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 3, p. 1, doi. 10.1007/s00339-016-9675-9

By:

Liu, Jianqiao;
Lu, Yiting;
Cui, Xiao;
Jin, Guohua;
Zhai, Zhaoxia

Publication type:

Article

A comparative study of SELBOX-JLT and SOI-JLT.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 117, n. 4, p. 2281, doi. 10.1007/s00339-014-8661-3

By:

Khan, Uzma;
Ghosh, Bahniman;
Akram, Md;
Salimath, Akshaykumar

Publication type:

Article

Electric field effect on the electronic properties of double-walled carbon-doped boron-nitride nanotubes.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1039, doi. 10.1007/s00339-013-7985-8

By:

Freitas, A.;
Azevedo, S.;
Kaschny, J.;
Machado, M.

Publication type:

Article

Dielectric characterization of semiconducting ZnPc films sandwiched between Gold or Aluminum electrodes.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1267, doi. 10.1007/s00339-013-7910-1

By:

Kitaneh, R.;
Abu-Samreh, M.;
Musameh, S.;
Hraibat, S.;
Saleh, A.

Publication type:

Article

Investigations on structural and electrical properties of Cadmium Zinc Sulfide thin films.

Published in:

International Journal of Nano Dimension, 2015, v. 6, n. 4, p. 433

By:

Sagadevan, S.;
Pandurangan, K.

Publication type:

Article

ELECTRONIC, OPTICAL AND MECHANICAL PROPERTIES OF AIIBVI SEMICONDUCTORS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2012, v. 26, n. 8, p. 1250020-1, doi. 10.1142/S0217979212500208

By:

YADAV, DHEERENDRA SINGH;
VERMA, A. S.

Publication type:

Article

Generic Losses Model for Traditional Inverters and Neutral Point Clamped Inverters.

Published in:

Electronics & Electrical Engineering, 2014, v. 20, n. 5, p. 84, doi. 10.5755/j01.eee.20.5.7106

By:

Minambres-Marcos, V.;
Guerrero-Martinez, M. A.;
Romero-Cadaval, E.;
Milanes-Montero, M. I.

Publication type:

Article

Organic Semiconductors in Organic Thin-Film Transistor-Based Chemical and Biological Sensors.

Published in:

Polymer Reviews, 2013, v. 53, n. 3, p. 352, doi. 10.1080/15583724.2013.808665

By:

Liao, Caizhi;
Yan, Feng

Publication type:

Article

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.

Published in:

Scientific Reports, 2015, p. 13362, doi. 10.1038/srep13362

By:

Bae, Yoon Cheol;
Lee, Ah Rahm;
Baek, Gwang Ho;
Chung, Je Bock;
Kim, Tae Yoon;
Park, Jea Gun;
Hong, Jin Pyo

Publication type:

Article

High-performance ultraviolet photodetectors based on solution-grown ZnS nanobelts sandwiched between graphene layers.

Published in:

Scientific Reports, 2015, p. 12345, doi. 10.1038/srep12345

By:

Kim, Yeonho;
Kim, Sang Jin;
Hong, Byung Hee;
Jang, Du-Jeon;
Cho, Sung-Pyo

Publication type:

Article

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06964

By:

Hudait, Mantu K.;
Clavel, Michael;
Goley, Patrick;
Jain, Nikhil;
Yan Zhu

Publication type:

Article

Level Anticrossing of Impurity States in Semiconductor Nanocrystals.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06917

By:

Baimuratov, Anvar S.;
Rukhlenko, Ivan D.;
Turkov, Vadim K.;
Ponomareva, Irina O.;
Leonov, Mikhail Yu.;
Perova, Tatiana S.;
Berwick, Kevin;
Baranov, Alexander V.;
Fedorov, Anatoly V.

Publication type:

Article

Photoelectrochemical properties of nanostructured photoelectrodes TiO2/CdSe for systems of hydrogen production.

Published in:

Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2012, v. 3, n. 3, p. 330

By:

Slobodyanyuk, I. A.;
Rusetskii, I. A.;
Kolbasov, G. Ya.

Publication type:

Article

ENHANCED VGF GROWTH OF SINGLE- AND MULTI-CRYSTALLINE SEMICONDUCTORS USING PULSED TMF.

Published in:

Magnetohydrodynamics (0024-998X), 2015, v. 51, n. 1, p. 149, doi. 10.22364/mhd.51.1.14

By:

Dropka, N.;
Frank-Rotsch, Ch.

Publication type:

Article

ABSENCE OF ROOM TEMPERATURE FERROMAGNETISM IN Co AND Cr CO-DOPED TiO2 BASED DILUTE MAGNETIC SEMICONDUCTORS.

Published in:

Digest Journal of Nanomaterials & Biostructures (DJNB), 2016, v. 11, n. 2, p. 411

By:

WASEEM, S.;
ANJUM, S.;
MUSTAFA, L.;
ZEESHAN, T.;
ZIA, R.;
MOHSIN, N.

Publication type:

Article

Electronic and Optical Properties of Semiconductor and Alkali Halides.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2013, v. 38, n. 7, p. 1889, doi. 10.1007/s13369-013-0551-z

By:

Ahmad, Sajad;
Ashraf, Mudasir;
Ahmad, Aijaz;
Singh, D.

Publication type:

Article