Native point defects in binary InP semiconductors.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 21, p. 7482, doi. 10.1007/s10853-012-6595-8
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- Publication type:
- Article
Works matching DE "ELECTRIC properties of indium phosphide"
Results: 8
1
2
Erratum.
- Published in:
- 2015
- Publication type:
- Correction Notice
3
Temperature-dependent integral exciton absorption in semiconducting InP crystals.
- Published in:
- Technical Physics Letters, 2012, v. 38, n. 2, p. 121, doi. 10.1134/S1063785012020174
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- Publication type:
- Article
4
New Symbolically Defined Model for InP Heterojunction Bipolar Transistors.
- Published in:
- Microwave Journal, 2018, v. 61, n. 7, p. 72
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- Publication type:
- Article
5
Highly Reproducible Secondary Electron Imaging under Electron Irradiation Using High-Pass Energy Filtering in Low-Voltage Scanning Electron Microscopy.
- Published in:
- Microscopy & Microanalysis, 2012, v. 18, n. 2, p. 385, doi. 10.1017/S1431927611012852
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- Publication type:
- Article
6
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 84, doi. 10.1134/S1063782618010074
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- Publication type:
- Article
7
Electrical properties of Pd-oxide-InP structures.
- Published in:
- Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094
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- Publication type:
- Article
8
Evaluation of the Conduction Band Discontinuity of MgSe/ZnCdSe Heterojunctions on InP Substrates Using n-i-n Diodes.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4515, doi. 10.1007/s11664-018-6389-0
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- Publication type:
- Article