The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.
- Published in:
- European Physical Journal - Applied Physics, 2011, v. 55, n. 1, p. N.PAG, doi. 10.1051/epjap/2011110184
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- Publication type:
- Article
Works matching DE "ELECTRIC properties of indium gallium nitride"
Results: 9
1
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Composition-dependent structural, optical and electrical properties of In<sub>x</sub>Ga<sub>1-x</sub>N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation.
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- Journal of Materials Science, 2013, v. 48, n. 3, p. 1196, doi. 10.1007/s10853-012-6859-3
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- Article
3
Polarization, piezoelectric properties, and elastic coefficients of InGaN solid solutions from first principles.
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- Journal of Materials Science, 2012, v. 47, n. 21, p. 7587, doi. 10.1007/s10853-012-6351-0
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- Article
4
Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1055, doi. 10.1007/s00339-014-8284-8
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- Article
5
Nanowire template permits flexible energy absorption.
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- Advanced Materials & Processes, 2012, v. 170, n. 8, p. 12
- Publication type:
- Article
6
Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.
- Published in:
- Scientific Reports, 2015, p. 16612, doi. 10.1038/srep16612
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- Publication type:
- Article
7
Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes (Phys. Status Solidi A 5∕2017).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 5, p. n/a, doi. 10.1002/pssa.201770130
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- Article
8
Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 19, doi. 10.1002/pssa.201532491
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- Article
9
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.
- Published in:
- Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038
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- Publication type:
- Article