Works matching DE "ELECTRIC properties of indium gallium arsenide"
Results: 6
Epitaxial structures for InGaAs/InP avalanche photodiodes.
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- Journal of Communications Technology & Electronics, 2017, v. 62, n. 3, p. 304, doi. 10.1134/S1064226917030056
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V-groove etched 1-eV-GaInNAs nipi solar cell.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2326-6
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Electro-Optical Characteristics of Pn InGaAs Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2813, doi. 10.1007/s11664-015-3706-8
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Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.
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- Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108
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Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts.
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- Semiconductors, 2012, v. 46, n. 4, p. 484, doi. 10.1134/S1063782612040173
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Measuring the Minority-Carrier Diffusion Length of n-Type InGaAs Epilayers Using Surface Photovoltage.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2061, doi. 10.1007/s11664-016-5124-y
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- Article