Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO Metal-Insulator-Metal Devices.
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- Journal of Electronic Materials, 2012, v. 41, n. 4, p. 656, doi. 10.1007/s11664-012-1912-1
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Works matching DE "ELECTRIC properties of hafnium oxide"
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Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 749, doi. 10.1007/s10854-013-1640-1
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