Works matching DE "ELECTRIC properties of gallium nitride"

Results: 38

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19028, doi. 10.1007/s10854-018-0028-7

By:

Zhang, Hao;
Deng, Jinxiang;
He, Yafeng;
Duan, Ping;
Liang, Xiaoyang;
Li, Ruidong;
Qin, Changdong;
Pan, Zhiwei;
Bai, Zhiying;
Wang, Jiyou

Publication type:

Article

Effects of transition metal ions doping on optical and electronic properties of GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10596, doi. 10.1007/s10854-017-6834-5

By:

Majid, Abdul;
Ahmad, Naeem;
Khalid, N.;
Shakil, Muhammad;
Zhu, Jianjun

Publication type:

Article

On selenium p- n heterojunctions and Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 1097, doi. 10.1007/s10854-014-2509-7

By:

Mönch, Winfried

Publication type:

Article

Electronic properties of defects in high-fluence electron-irradiated bulk GaN.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 3, p. 521, doi. 10.1002/pssb.201552521

By:

Duc, Tran Thien;
Pozina, Galia;
Son, Nguyen Tien;
Ohshima, Takeshi;
Janzén, Erik;
Hemmingsson, Carl

Publication type:

Article

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs.

Published in:

Energies (19961073), 2017, v. 10, n. 3, p. 407, doi. 10.3390/en10030407

By:

Efthymiou, Loizos;
Camuso, Gianluca;
Longobardi, Giorgia;
Chien, Terry;
Chen, Max;
Udrea, Florin

Publication type:

Article

Requirements for Next Generation Wearable Display and Battery Technologies.

Published in:

SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 570, doi. 10.1002/sdtp.10732

By:

Parikh, Kunjal;
Ahmed, Khaled;
Matsumura, Naoki;
Gottardo, David;
Cancel, Ramon;
Girvin, Brian;
Woodbeck, Ronald

Publication type:

Article

Investigation on structural, electronic, and magnetic properties of Mn-doped GaN clusters.

Published in:

Journal of Materials Science, 2013, v. 48, n. 24, p. 8552, doi. 10.1007/s10853-013-7674-1

By:

Lu, Pengfei;
Wu, Chengjie;
Li, Yiluan;
Yu, Zhongyuan;
Cao, Huawei;
Wang, Shumin

Publication type:

Article

75 nm T-shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short-channel effect.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 24, p. 1, doi. 10.1049/el.2013.2769

By:

D. M. Geum;
S. H. Shin;
M. S. Kim;
J. H. Jang

Publication type:

Article

High efficiency GaN current-mode class-D amplifier at 2.6 GHz using pure differential transmission line filters.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 1, p. 87, doi. 10.1049/el.2012.3984

By:

Sigg, A.;
Heck, S.;
Bräckle, A.;
Berroth, M.

Publication type:

Article

Electron mobility limited by scattering from threading dislocation lines within gallium nitride.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 9, p. -1, doi. 10.1142/S0217979216500508

By:

Mohammad Alavi, Seyed;
Bagani, Erfan

Publication type:

Article

Characterization of nitride-based LED materials and devices using TOF-SIMS.

Published in:

Surface & Interface Analysis: SIA, 2014, v. 46, p. 299, doi. 10.1002/sia.5634

By:

Wei, Xuecheng;
Zhao, Lixia;
Wang, Junxi;
Zeng, Yiping;
Li, Jinmin

Publication type:

Article

Using gallium-nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters.

Published in:

IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 8, p. 1727, doi. 10.1049/iet-pel.2015.0810

By:

Jhe-Yu Lin;
Dan Chen;
Chung-Wen Hung;
Zan Huang

Publication type:

Article

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 1, p. 1, doi. 10.1002/aelm.201600501

By:

Tsao, J. Y.;
Chowdhury, S.;
Hollis, M. A.;
Jena, D.;
Johnson, N. M.;
Jones, K. A.;
Kaplar, R. J.;
Rajan, S.;
Van De Walle, C. G.;
Bellotti, E.;
Chua, C. L.;
Collazo, R.;
Coltrin, M. E.;
Cooper, J. A.;
Evans, K. R.;
Graham, S.;
Grotjohn, T. A.;
Heller, E. R.;
Higashiwaki, M.;
Islam, M. S.

Publication type:

Article

INVESTIGATION OF Si RELATED DEEP ACCEPTOR LEVEL IN AS GROWN GaN BY DLTS.

Published in:

Journal of Ovonic Research, 2017, v. 13, n. 1, p. 7

By:

AJAZ-UN-NABI, M.;
MAHMOOD, K.;
ALI, A.;
ARSHAD, M. IMRAN;
AMIN, N.;
ASGHAR, M.

Publication type:

Article

First-principles calculations of the pressure dependence on the structural and electronic properties of GaN/CrN superlattice.

Published in:

Revista Facultad de Ingeniería Universidad de Antioquia, 2015, n. 76, p. 143, doi. 10.17533/udea.redin.n76a17

By:

Espitia-Rico, Miguel José;
Díaz-Forero, John Hernán;
Castillo-Méndez, Luis Eduardo

Publication type:

Article

Solid-State PAs Battle TWTAs for ECM Systems.

Published in:

Microwave Journal, 2017, v. 60, p. 26

By:

Montgomery, Rick;
Courtney, Patrick

Publication type:

Article

Enabling 5G with GaN Technology: Setting the Table for Success.

Published in:

Microwave Journal, 2017, v. 60, n. 5, p. 10

By:

Reep, Doug

Publication type:

Article

GaN: Not Just for Defense Anymore.

Published in:

Microwave Journal, 2017, v. 60, n. 5, p. 6

By:

Vasquez, Scott

Publication type:

Article

Gallium Nitride (GaN): A Critical Technology for 5G.

Published in:

Microwave Journal, 2017, v. 60, n. 5, p. 4

By:

Schnaufer, David;
Peterson, Bror

Publication type:

Article

Raytheon Continues to Drive GaN Evolution Through Cutting Edge Innovation.

Published in:

Microwave Journal, 2014, v. 57, n. 4, p. 57

By:

Drubin, Cliff

Publication type:

Article

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.

Published in:

Crystal Research & Technology, 2015, v. 50, n. 6, p. 425, doi. 10.1002/crat.201400468

By:

Garbe, Valentin;
Abendroth, Barbara;
Stöcker, Hartmut;
Gavrilov, Arkadi;
Cohen‐Elias, Doron;
Mehari, Shlomo;
Ritter, Dan;
Meyer, Dirk C.

Publication type:

Article

First-Principles Investigation of Structural and Electronic Properties of the BxGa1-xN, BxAl1-xN, AlxGa1-xN and BxAlyGa1-x-yN Compounds.

Published in:

Acta Physica Polonica: A, 2012, v. 122, n. 4, p. 748

By:

DJOUD, L.;
LACHEBI, A.;
MERABET, B.;
ABID, H.

Publication type:

Article

Strong Defense Outlook Offers Continued Growth for RF Technologies.

Published in:

Microwave Journal, 2018, v. 61, n. 9, p. 20

By:

Anwar, Asif

Publication type:

Article

Dislocation Identification and Mapping in GaN by Electron Channeling Contrast Imaging.

Published in:

2012

By:

Picard, Y.N.;
Kamaladasa, R.J.;
Liu, F.;
Huang, L.;
Porter, L.;
Davis, R.F.

Publication type:

Abstract

Electron Scattering on the Short-range Potential of the Point Defects in Sphalerite GaN: Calculation from the First Principles.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06007

By:

Malyk, O. P.;
Syrotyuk, S. V.

Publication type:

Article

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700362

By:

Yamada, Hisashi;
Chonan, Hiroshi;
Takahashi, Tokio;
Shimizu, Mitsuaki

Publication type:

Article

Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 8, p. 1725, doi. 10.1002/pssa.201431821

By:

Yin, Luqiao;
Bai, Yang;
Nan, Tingting;
Zhang, Jianhua

Publication type:

Article

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038

By:

Avakyants, L.;
Aslanyan, A.;
Bokov, P.;
Polozhentsev, K.;
Chervyakov, A.

Publication type:

Article

NANOSCALE CAPACITANCE AND CAPACITANCE-VOLTAGE CURVES FOR ADVANCED CHARACTERIZATION OF ELECTRICAL PROPERTIES OF SILICON AND GaN STRUCTURES USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY (sMIM).

Published in:

Electronic Device Failure Analysis, 2017, v. 19, n. 4, p. 12, doi. 10.31399/asm.edfa.2017-4.p012

By:

Amster, Oskar;
Friedman, Stuart;
Yongliang Yang;
Stanke, Fred

Publication type:

Article

Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6625, doi. 10.1007/s11664-018-6576-z

By:

Mahaboob, Isra;
Marini, Jonathan;
Hogan, Kasey;
Rocco, Emma;
Tompkins, Randy P.;
Lazarus, Nathan;
Shahedipour-Sandvik, Fatemeh

Publication type:

Article

Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2

By:

Lin, Kaifan;
Kuo, Dong-Hau

Publication type:

Article

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of InGaN.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 4, p. 1035, doi. 10.1007/s11664-014-3615-2

By:

Gedam, V.;
Pansari, A.;
Sahoo, B.

Publication type:

Article

Electrical Characteristics of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 3, p. 999, doi. 10.1007/s11664-014-3605-4

By:

Li, Y.;
Feng, L.;
Xing, Q.;
Wang, X.

Publication type:

Article

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y

By:

Rajagopal Reddy, V.;
Manjunath, V.;
Janardhanam, V.;
Leem, Chang-Hyun;
Choi, Chel-Jong

Publication type:

Article

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 12, p. 4560, doi. 10.1007/s11664-014-3383-z

By:

Eller, Brianna;
Yang, Jialing;
Nemanich, Robert

Publication type:

Article

Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 471, doi. 10.1007/s11664-011-1864-x

By:

Chen, Y.;
Jiang, Y.;
Xu, P.Q.;
Ma, Z.G.;
Wang, X.L.;
He, T.;
Peng, M.Z.;
Luo, W.J.;
Liu, X.Y.;
Wang, L.;
Jia, H.Q.;
Chen, H.

Publication type:

Article

Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700480

By:

Shiojima, Kenji;
Hashizume, Takanori;
Horikiri, Fumimasa;
Tanaka, Takeshi;
Mishma, Tomoyoshi

Publication type:

Article

Works matching DE "ELECTRIC properties of gallium nitride"

Reduction of leakage current at the SiN<sub>x</sub>/GaN interface in GaN Schottky diodes.

Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga<sub>2</sub>O<sub>3</sub>:Nb heterojunction.

Effects of transition metal ions doping on optical and electronic properties of GaN.

On selenium p- n heterojunctions and Schottky contacts.

Electronic properties of defects in high-fluence electron-irradiated bulk GaN.

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs.

Requirements for Next Generation Wearable Display and Battery Technologies.

Investigation on structural, electronic, and magnetic properties of Mn-doped GaN clusters.

75 nm T-shaped gate for In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN HEMTs with minimal short-channel effect.

High efficiency GaN current-mode class-D amplifier at 2.6 GHz using pure differential transmission line filters.

Electron mobility limited by scattering from threading dislocation lines within gallium nitride.

Characterization of nitride-based LED materials and devices using TOF-SIMS.

Using gallium-nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters.

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges.

INVESTIGATION OF Si RELATED DEEP ACCEPTOR LEVEL IN AS GROWN GaN BY DLTS.

First-principles calculations of the pressure dependence on the structural and electronic properties of GaN/CrN superlattice.

Solid-State PAs Battle TWTAs for ECM Systems.

Enabling 5G with GaN Technology: Setting the Table for Success.

GaN: Not Just for Defense Anymore.

Gallium Nitride (GaN): A Critical Technology for 5G.

Raytheon Continues to Drive GaN Evolution Through Cutting Edge Innovation.

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.

First-Principles Investigation of Structural and Electronic Properties of the B<sub>x</sub>Ga<sub>1-x</sub>N, B<sub>x</sub>Al<sub>1-x</sub>N, Al<sub>x</sub>Ga<sub>1-x</sub>N and B<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N Compounds.

Strong Defense Outlook Offers Continued Growth for RF Technologies.

Dislocation Identification and Mapping in GaN by Electron Channeling Contrast Imaging.

Electron Scattering on the Short-range Potential of the Point Defects in Sphalerite GaN: Calculation from the First Principles.

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates.

Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure.

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.

NANOSCALE CAPACITANCE AND CAPACITANCE-VOLTAGE CURVES FOR ADVANCED CHARACTERIZATION OF ELECTRICAL PROPERTIES OF SILICON AND GaN STRUCTURES USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY (sMIM).

Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.

Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of InGaN.

Electrical Characteristics of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates.

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States.

Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.

Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.