Works matching DE "ELECTRIC properties of gallium nitride"
Results: 38
Investigation on structural, electronic, and magnetic properties of Mn-doped GaN clusters.
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- Journal of Materials Science, 2013, v. 48, n. 24, p. 8552, doi. 10.1007/s10853-013-7674-1
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- Article
Using gallium-nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 8, p. 1727, doi. 10.1049/iet-pel.2015.0810
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- Article
Electron Scattering on the Short-range Potential of the Point Defects in Sphalerite GaN: Calculation from the First Principles.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06007
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- Article
NANOSCALE CAPACITANCE AND CAPACITANCE-VOLTAGE CURVES FOR ADVANCED CHARACTERIZATION OF ELECTRICAL PROPERTIES OF SILICON AND GaN STRUCTURES USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY (sMIM).
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- Electronic Device Failure Analysis, 2017, v. 19, n. 4, p. 12, doi. 10.31399/asm.edfa.2017-4.p012
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- Article
Raytheon Continues to Drive GaN Evolution Through Cutting Edge Innovation.
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- Microwave Journal, 2014, v. 57, n. 4, p. 57
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- Article
Strong Defense Outlook Offers Continued Growth for RF Technologies.
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- Microwave Journal, 2018, v. 61, n. 9, p. 20
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- Article
Solid-State PAs Battle TWTAs for ECM Systems.
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- Microwave Journal, 2017, v. 60, p. 26
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- Article
Gallium Nitride (GaN): A Critical Technology for 5G.
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- Microwave Journal, 2017, v. 60, n. 5, p. 4
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Enabling 5G with GaN Technology: Setting the Table for Success.
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- Microwave Journal, 2017, v. 60, n. 5, p. 10
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GaN: Not Just for Defense Anymore.
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- Microwave Journal, 2017, v. 60, n. 5, p. 6
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- Article
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.
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- Crystal Research & Technology, 2015, v. 50, n. 6, p. 425, doi. 10.1002/crat.201400468
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- Article
Requirements for Next Generation Wearable Display and Battery Technologies.
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- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 570, doi. 10.1002/sdtp.10732
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- Article
INVESTIGATION OF Si RELATED DEEP ACCEPTOR LEVEL IN AS GROWN GaN BY DLTS.
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- Journal of Ovonic Research, 2017, v. 13, n. 1, p. 7
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- Article
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.
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- Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038
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- Article
Reduction of leakage current at the SiN<sub>x</sub>/GaN interface in GaN Schottky diodes.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3
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- Article
Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga<sub>2</sub>O<sub>3</sub>:Nb heterojunction.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19028, doi. 10.1007/s10854-018-0028-7
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- Article
Effects of transition metal ions doping on optical and electronic properties of GaN.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10596, doi. 10.1007/s10854-017-6834-5
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On selenium p- n heterojunctions and Schottky contacts.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 1097, doi. 10.1007/s10854-014-2509-7
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Dislocation Identification and Mapping in GaN by Electron Channeling Contrast Imaging.
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- 2012
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- Abstract
75 nm T-shaped gate for In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN HEMTs with minimal short-channel effect.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 24, p. 1, doi. 10.1049/el.2013.2769
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- Article
High efficiency GaN current-mode class-D amplifier at 2.6 GHz using pure differential transmission line filters.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 1, p. 87, doi. 10.1049/el.2012.3984
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- Article
First-Principles Investigation of Structural and Electronic Properties of the B<sub>x</sub>Ga<sub>1-x</sub>N, B<sub>x</sub>Al<sub>1-x</sub>N, Al<sub>x</sub>Ga<sub>1-x</sub>N and B<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N Compounds.
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- Acta Physica Polonica: A, 2012, v. 122, n. 4, p. 748
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- Article
Mapping of n‐GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700480
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- Article
Electronic properties of defects in high-fluence electron-irradiated bulk GaN.
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- Physica Status Solidi (B), 2016, v. 253, n. 3, p. 521, doi. 10.1002/pssb.201552521
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- Article
Electron mobility limited by scattering from threading dislocation lines within gallium nitride.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 9, p. -1, doi. 10.1142/S0217979216500508
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- Article
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges.
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- Advanced Electronic Materials, 2018, v. 4, n. 1, p. 1, doi. 10.1002/aelm.201600501
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- Article
First-principles calculations of the pressure dependence on the structural and electronic properties of GaN/CrN superlattice.
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- Revista Facultad de Ingeniería Universidad de Antioquia, 2015, n. 76, p. 143, doi. 10.17533/udea.redin.n76a17
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- Article
Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.
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- Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6625, doi. 10.1007/s11664-018-6576-z
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- Article
Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2
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- Article
Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of InGaN.
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- Journal of Electronic Materials, 2015, v. 44, n. 4, p. 1035, doi. 10.1007/s11664-014-3615-2
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- Article
Electrical Characteristics of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 3, p. 999, doi. 10.1007/s11664-014-3605-4
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- Article
Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.
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- Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y
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- Article
Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States.
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- Journal of Electronic Materials, 2014, v. 43, n. 12, p. 4560, doi. 10.1007/s11664-014-3383-z
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- Article
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.
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- Journal of Electronic Materials, 2012, v. 41, n. 3, p. 471, doi. 10.1007/s11664-011-1864-x
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- Article
Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700362
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Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 8, p. 1725, doi. 10.1002/pssa.201431821
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- Article
On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs.
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- Energies (19961073), 2017, v. 10, n. 3, p. 407, doi. 10.3390/en10030407
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- Article
Characterization of nitride-based LED materials and devices using TOF-SIMS.
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- Surface & Interface Analysis: SIA, 2014, v. 46, p. 299, doi. 10.1002/sia.5634
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- Article