Method for low-temperature vacuum-thermal cleaning of surface single crystals Si and GaAs.
- Published in:
- Journal of Polytechnic, 2023, v. 26, n. 4, p. 1441, doi. 10.2339/politeknik.1119884
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- Publication type:
- Article
Works matching DE "ELECTRIC properties of gallium arsenide"
Results: 15
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The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer.
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- Acta Physica Polonica: A, 2017, v. 132, n. 3, p. 1118, doi. 10.12693/APhysPolA.132.1118
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- Publication type:
- Article
3
STUDY OF ELECTROSTATIC POTENTIAL SURFACE AROUND BIPYRAMIDAL GaAs QUANTUM DOT.
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- Digest Journal of Nanomaterials & Biostructures (DJNB), 2012, v. 7, n. 4, p. 1787
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- Article
4
GaN Powers Microwave Point-to-Point Radios.
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- Microwave Journal, 2017, v. 60, n. 2, p. 22
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- Publication type:
- Article
5
All-Dielectric Multilayer Cylindrical Structures for Invisibility Cloaking.
- Published in:
- Scientific Reports, 2015, p. 9574, doi. 10.1038/srep09574
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- Publication type:
- Article
6
Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 9, p. n/a, doi. 10.1002/pssr.201700180
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- Article
7
Strong Defense Outlook Offers Continued Growth for RF Technologies.
- Published in:
- Microwave Journal, 2018, v. 61, n. 9, p. 20
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- Publication type:
- Article
8
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
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- Publication type:
- Article
9
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes.
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- Semiconductors, 2016, v. 50, n. 6, p. 810, doi. 10.1134/S1063782616060269
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- Publication type:
- Article
10
Radiation-induced surface degradation of GaAs and high electron mobility transistor structures.
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- Semiconductors, 2012, v. 46, n. 6, p. 814, doi. 10.1134/S1063782612060085
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- Publication type:
- Article
11
Quantum-size effects in semiconductor heterosystems.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 224, doi. 10.15407/spqeo20.02.224
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- Article
12
Exploration of Gas Discharges with GaAs, GaP and ZnSe Electrodes Under Atmospheric Pressure.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4444, doi. 10.1007/s11664-018-6161-5
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- Article
13
Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE).
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 2, p. 1061, doi. 10.1007/s11664-016-5071-7
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- Publication type:
- Article
14
Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high-efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture.
- Published in:
- Progress in Photovoltaics, 2015, v. 23, n. 12, p. 1687, doi. 10.1002/pip.2709
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- Publication type:
- Article
15
Mid-Infrared linear optical transitions in δ-doped AlGaAs/GaAs triple-quantum well.
- Published in:
- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2321-y
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- Publication type:
- Article