A model for the bandgap energy of the dilute nitride GaNSb (0 ≤ x ≤ 0.03).Published in:Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 550, doi. 10.1007/s10854-015-3788-3By:Zhao, Chuan-Zhen;Wei, Tong;Sun, Xiao-Dong;Wang, Sha-Sha;Lu, Ke-QingPublication type:Article