Works matching DE "ELECTRIC properties of gallium antimonide"

A model for the bandgap energy of the dilute nitride GaNSb (0 ≤ x ≤ 0.03).

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 550, doi. 10.1007/s10854-015-3788-3

By:

• Zhao, Chuan-Zhen;
• Wei, Tong;
• Sun, Xiao-Dong;
• Wang, Sha-Sha;
• Lu, Ke-Qing

Publication type:

Article