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Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.
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- Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6625, doi. 10.1007/s11664-018-6576-z
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- Article
Intersubband Transitions in Nonpolar m‐Plane AlGaN/GaN Heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700828
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- Article
Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700825
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- Article
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700427
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- Article
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges.
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- Advanced Electronic Materials, 2018, v. 4, n. 1, p. 1, doi. 10.1002/aelm.201600501
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- Article
Investigation of the Performance of HEMT-Based NO, NO<sub>2</sub> and NH<sub>3</sub> Exhaust Gas Sensors for Automotive Antipollution Systems.
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- Sensors (14248220), 2016, v. 16, n. 3, p. 273, doi. 10.3390/s16030273
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- Article
Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 950, doi. 10.1007/s10854-014-2487-9
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- Article
Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States.
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- Journal of Electronic Materials, 2014, v. 43, n. 12, p. 4560, doi. 10.1007/s11664-014-3383-z
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Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 439, doi. 10.1134/S1063785012050033
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- Article
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.
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- Journal of Electronic Materials, 2012, v. 41, n. 3, p. 471, doi. 10.1007/s11664-011-1864-x
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- Article