Works matching DE "EFFECT of temperature on thin film transistors"
Results: 3
P-22: Top-Gate Thin Film Transistor with ZnO:N Channel Fabricated by Room Temperature RF Magnetron Sputtering.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 1024, doi. 10.1002/j.2168-0159.2014.tb00266.x
- By:
- Publication type:
- Article
Current‐Induced Joule Heating and Electrical Field Effects in Low Temperature Measurements on TIPS Pentacene Thin Film Transistors.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 12, p. 1, doi. 10.1002/aelm.201600163
- By:
- Publication type:
- Article
ZnO TFTs prepared by chemical bath deposition technique with high- k La<sub>2</sub>O<sub>3</sub> gate dielectric annealed in ambient atmosphere.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 826, doi. 10.1002/pssa.201431605
- By:
- Publication type:
- Article