Works matching DE "EFFECT of temperature on metal oxide semiconductor field-effect transistors"
Results: 1
Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiO<sub>x</sub>N<sub>y</sub>/HfO<sub>x</sub> Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800152
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- Publication type:
- Article