Works matching DE "EFFECT of temperature on high electron mobility transistors"

Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods.

Published in:

Journal of Thermal Analysis & Calorimetry, 2017, v. 129, n. 2, p. 1159, doi. 10.1007/s10973-017-6275-7

By:

• Chen, Szu-Hao;
• Chou, Po-Chien;
• Cheng, Stone

Publication type:

Article